BGS13SN8 [INFINEON]
BGS13SN8 是一款高功率开关，可通过3个TRx路径进行计数，最高可处理 30dBm。得益于高开关速度，它非常适合 WLAN 和蓝牙应用。它涵盖了高达6.0 GHz的宽频率范围。;
| 型号： | BGS13SN8 |
| 厂家： | 
Infineon |
| 描述： | BGS13SN8 是一款高功率开关，可通过3个TRx路径进行计数，最高可处理 30dBm。得益于高开关速度，它非常适合 WLAN 和蓝牙应用。它涵盖了高达6.0 GHz的宽频率范围。 局域网 开关 WLAN 蓝牙 无线局域网 |
| 文件： | 总13页 (文件大小：419K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BGS13SN8
Wideband RF SP3T Switch
Data Sheet
Revision 2.3 - 2022-03-28
Final
Power and Sensor Systems
Edition 2022-03-28
Published by Infineon Technologies AG
81726 Munich, Germany
c
ꢀ2022 Infineon Technologies AG
All Rights Reserved.
LEGAL DISCLAIMER
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding
the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used
in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support device or system or to affect the
safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in
the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
Revision History
Document No.: BGS13SN8_Final_v2.3.pdf
Revision History: Final Rev. v2.3
Previous Version: Final, Revision v2.2 - 2015-11-11
Page
Subjects (major changes since last revision)
8
Insertion Loss, Return Loss and Isolation Table updated
Trademarks of Infineon Technologies AG
µHVICTM , µIPMTM , µPFCTM , AU-ConvertIRTM , AURIXTM , C166TM , CanPAKTM , CIPOSTM , CIPURSETM , CoolDPTM , CoolGaNTM
,
,
,
,
,
,
COOLiRTM , CoolMOSTM , CoolSETTM , CoolSiCTM , DAVETM , DI-POLTM , DirectFETTM , DrBladeTM , EasyPIMTM , EconoBRIDGETM
EconoDUALTM
HybridPACKTM
,
,
EconoPACKTM
iMOTIONTM
,
EconoPIMTM
,
EiceDRIVERTM
IsoPACKTM
,
eupecTM
,
,
FCOSTM
,
GaNpowIRTM
MIPAQTM
,
,
HEXFETTM
,
HITFETTM
my-dTM
,
IRAMTM ISOFACETM
,
,
LEDrivIRTM
,
LITIXTM
,
ModSTACKTM
,
NovalithICTM , OPTIGATM , OptiMOSTM , ORIGATM , PowIRaudioTM , PowIRStageTM , PrimePACKTM , PrimeSTACKTM , PROFETTM
PRO-SILTM , RASICTM , REAL3TM , SmartLEWISTM , SOLID FLASHTM , SPOCTM , StrongIRFETTM , SupIRBuckTM , TEMPFETTM
TRENCHSTOPTM , TriCoreTM , UHVICTM , XHPTM , XMCTM
.
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Trademarks updated November 2015
Data Sheet
3
Revision 2.3 - 2022-03-28
List of Tables
Contents
1
2
3
4
5
6
7
Features
5
5
Product Description
Maximum Ratings
Operation Ranges
RF Characteristics
GPIO Specification
Pin Definition and Package Outline
6
7
8
10
10
List of Figures
1
2
3
4
5
BGS13SN8 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Package Outline (bottom and side view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Marking Pattern . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Land pattern and stencil mask . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Packing (Tape) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
List of Tables
1
2
3
4
5
6
7
8
9
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
6
7
7
7
8
9
Maximum Ratings, Table I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Ratings, Table II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operation Ranges . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF Input Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GPIO Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
10 Mechanical Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Data Sheet
4
Revision 2.3 - 2022-03-28
2
PRODUCT DESCRIPTION
BGS13SN8 Wideband RF SP3T Switch
1 Features
• 3 high-linearity TRx paths with power handling capability of up to
30 dBm
• High switching speed, ideal for WLAN and Bluetooth applications
• Low insertion loss
• Low harmonic generation
• High port-to-port-isolation
• Suitable for Edge / CDMA2000 / LTE / WCDMA applications
• 0.1 to 6 GHz coverage
• No decoupling capacitors required if no DC applied on RF lines
• On-chip control logic including ESD protection
• General Purpose Input-Output (GPIO) Interface
• Small form factor 1.1 mm x 1.1 mm
• No power supply blocking required
• High EMI robustness
• RoHS and WEEE compliant package
2 Product Description
The BGS13SN8 RF MOS switch is specifically designed for WLAN and Bluetooth applications. Any of the 3 ports
can be used as termination of the diversity antenna handling up to 30 dBm.
This SP3T offers low insertion loss and high robustness against interferer signals at the antenna port and low
harmonic generation in termination mode. The on-chip controller integrates CMOS logic and level shifters, driven
by control inputs from 1.35 V to VDD . The BGS13SN8 RF Switch is manufactured in Infineon’s patented MOS
technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the
inherent higher ESD robustness. The device has a very small size of only 1.1 x 1.1 mm2 and a maximum height of
0.4 mm.
No decoupling capacitors are required in typical applications as long as no DC is applied to any RF port.
Table 1: Ordering Information
Type
Package
Marking
BGS13SN8
TSNP-8-1
R
Data Sheet
5
Revision 2.3 - 2022-03-28
3
MAXIMUM RATINGS
Figure 1: BGS13SN8 Block Diagram
3 Maximum Ratings
Stresses above the maximum values listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings;
exceeding only one of these values may cause irreversible damage to the integrated circuit.
Table 2: Maximum Ratings, Table I at TA = 25 ◦C, unless otherwise specified
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
0.1
-0.5
-55
–
Typ.
–
Max.
6
1)
Frequency Range
f
GHz
V
◦C
◦C
Supply voltage
VDD
TSTG
Tj
–
3.6
–
–
–
Storage temperature range
Junction temperature
–
150
–
125
RF input power at all Rx ports PRF_Rx
–
–
32
dBm CW
ESD capability, CDM2)
ESD capability, HBM3)
VESD_CDM -1000
VESD_HBM -1000
-1000
–
+1000
+1000
+1000
+8000
V
V
V
V
All pins
–
Digital versus RF interface
RF interface
–
ESD capability, system level4) VESD_ANT
-8000
–
ANT versus system GND,
with 27 nH shunt inductor
1)There is also a DC connection between switched paths. The DC voltage at RF ports V
has to be 0V.
RFDC
2)Field-Induced Charged-Device Model JESD22-C101. Simulates charging/discharging events that occur in production equipment and
processes. Potential for CDM ESD events occurs whenever there is metal-to-metal contact in manufacturing.
3)Human Body Model ANSI/ESDA/JEDEC JS-001-2012 (R=1.5 kΩ, C=100 pF).
4)IEC 61000-4-2 (R=330 Ω, C=150 pF), contact discharge.
Data Sheet
6
Revision 2.3 - 2022-03-28
4
OPERATION RANGES
Table 3: Maximum Ratings, Table II at TA = 25 ◦C, unless otherwise specified
Parameter
Symbol
Values
Typ.
–
Unit
Note / Test Condition
Min.
Max.
Maximum DC-voltage on RF- VRFDC
Ports and RF-Ground
0
0
V
No DC voltages allowed on
RF-Ports
4 Operation Ranges
Table 4: Operation Ranges
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
1.65
–
Typ.
–
Max.
3.4
Supply voltage
Supply current1)
VDD
V
–
–
–
IBAT
80
–
–
µA
V
GPIO control voltage high
VCtrl_H
1.35
VBAT
+ 0.3
0.45
2
GPIO control voltage low
VCtrl_L
-0.3
–
–
–
V
–
GPIO control input capaci- CCtrl
tance
pF
Guaranteed by design
Ambient temperature
TA
-40
25
85
◦C
–
1)T = −40 ◦C - 85 ◦C, V = 1.65 - 3.4 V
A
DD
Table 5: RF Input Power
Parameter
Symbol
Values
Typ.
–
Unit
Note / Test Condition
Min.
Max.
Rx ports (50 Ω)
PRF_Rx
–
30
dBm
–
Data Sheet
7
Revision 2.3 - 2022-03-28
5
RF CHARACTERISTICS
5 RF Characteristics
Table 6: RF Characteristics at TA = −40 ◦C–85 ◦C, PIN = 0 dBm, Supply Voltage VDD= 1.65 V–3.4 V, unless
otherwise specified
Parameter
Symbol
Values
Typ.
Unit
Note / Test Condition
Min.
Max.
Insertion Loss at TA = 25 ◦C
–
–
–
–
–
–
–
0.21
0.27
0.36
0.45
0.53
0.55
1.30
0.30
0.40
0.45
0.60
0.70
0.75
1.80
dB
dB
dB
dB
dB
dB
dB
698–960 MHz
1428–1990 MHz
1920–2170 MHz
2170–2690 MHz
3400–3600 MHz
3600–3800 MHz
5150–5725 MHz
All Rx Ports
IL
Insertion Loss at TA = 85 ◦C
–
–
–
–
–
–
–
0.21
0.27
0.36
0.45
0.53
0.55
1.30
0.45
0.55
0.60
0.70
0.90
1.00
2.00
dB
dB
dB
dB
dB
dB
dB
698–960 MHz
1428–1990 MHz
1920–2170 MHz
2170–2690 MHz
3400–3600 MHz
3600–3800 MHz
5150–5725 MHz
All Rx Ports
IL
Return Loss
All Rx Ports
25
14
12
10
10
10
5
29
21
16
14
13
14
9
–
–
–
–
–
–
–
dB
dB
dB
dB
dB
dB
dB
698–960 MHz
1428–1990 MHz
1920–2170 MHz
2170–2690 MHz
3400–3600 MHz
3600–3800 MHz
5150–5725 MHz
RL
Isolation
34
23
21
18
14
14
9
40
29
26
24
19
18
12
–
–
–
–
–
–
–
dB
dB
dB
dB
dB
dB
dB
698–960 MHz
1428–1990 MHz
1920–2170 MHz
2170–2690 MHz
3400–3600 MHz
3600–3800 MHz
5150–5725 MHz
All Rx Ports
ISO
Data Sheet
8
Revision 2.3 - 2022-03-28
5
RF CHARACTERISTICS
Table 7: RF Characteristics at TA = −40 ◦C–85 ◦C, PIN = 0 dBm, Supply Voltage VDD= 1.65 V–3.4 V, unless
otherwise specified
P0.1 dB Compression Point, Extrapolated
All Rx Ports 1)
P0.1dB
Harmonic Generation up to 12.75 GHz
34
–
–
dBm 824–960 MHz
H2
PHarm
–
–
-90
-95
-75
-80
dBc
dBc
23 dBm, 50 Ω, CW mode
H3
PHarm
23 dBm, 50 Ω, CW mode
Intermodulation Distortion in Rx Band 2) (TA = 25 ◦C)
IMD2, low
IMD3
IMD2low
IMD3
–
–
–
–
–
–
-105
-115
-105
dBm
dBm
dBm
Tx = 10 dBm,
Interferer = −15 dBm, 50 Ω
IMD2, high
Switching Time
IMD2high
90 % OFF to 90 % ON;
90 % ON to 90 % OFF
RF Rise Time 3)
ton/off
–
–
90
150
ns
ns
50 % of Ctrl Signal to
90 % of RF Signal
Ctrl to RF Time 3)
tCtrl-RF
500
1000
1)Guaranteed by design.
2)On application board with shunt inductor, Min/Max-values measured with phase shifter.
3)Guaranteed by characterization.
Data Sheet
9
Revision 2.3 - 2022-03-28
7
PIN DEFINITION AND PACKAGE OUTLINE
6 GPIO Specification
Table 8: Modes of Operation (Truth Table)
Control Inputs
State
Mode
V1
0
V2
0
1
2
3
4
Isolation
RFin - RF1
RFin - RF2
RFin - RF3
1
0
0
1
1
1
7 Pin Definition and Package Outline
Table 9: Pin Configuration
No Name
Pin Type
PWR
I
Buffer Type Function
Power Supply
1
2
3
4
5
6
7
8
VDD
V2
V1
RF3
RF1
RFin
RF2
DGND
Control Pin 2
Control Pin 1
RF-Port 3
RF-Port 1
RF Input
I
I/O
I/O
I/O
I/O
GND
RF-Port 2
Digital Ground
Table 10: Mechanical Data
Parameter
Symbol
Value
Unit
mm
mm
mm2
mm
X-Dimension
Y-Dimension
Size
X
1.1 ± 0.05
1.1 ± 0.05
1.21
Y
Size
H
Height
0.375
Data Sheet
10
Revision 2.3 - 2022-03-28
7
PIN DEFINITION AND PACKAGE OUTLINE
Figure 2: Package Outline (bottom and side view)
Figure 3: Marking Pattern
Data Sheet
11
Revision 2.3 - 2022-03-28
7
PIN DEFINITION AND PACKAGE OUTLINE
Figure 4: Land pattern and stencil mask
Figure 5: Packing (Tape)
Data Sheet
12
Revision 2.3 - 2022-03-28
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
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