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BGS8H5UKZ [NXP]

SIGE:C LOW-NOISE AMPLIFIER MMIC;
BGS8H5UKZ
型号: BGS8H5UKZ
厂家: NXP    NXP
描述:

SIGE:C LOW-NOISE AMPLIFIER MMIC

放大器
文件: 总76页 (文件大小:5212K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

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NXP

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BGSA11GN10

BGSA11GN10 是双单刀单掷(SPST)射频天线调谐开关,针对高达 5.0 Ghz 的低 Ronenabling 应用进行了优化。该单电源芯片集成了片上 CMOS 逻辑,该逻辑由一个简单的单引脚兼容 CMOS 或 TTL 的控制输入信号驱动。0.1 dB压缩点超出了开关的最大输入功率水平,从而在所有信号电平下实现了线性性能。与 GaAs 技术不同,0.1 dB压缩点超出了开关的最大输入功率水平,从而在所有信号电平下实现了线性性能。只有在外部施加直流电压时才需要 RF 端口的外部直流隔离电容器。由于其极高的 RF 电压耐用性,其适用于在 RF 匹配电路中切换任何无功设备,如电感器和电容器,而不会在质量因素方面造成重大损失。

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BGSA12GN10

Maximizing battery life and data rate for 3G/4G mobile devices

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BGSA12GN10E6327

Material Content Data Sheet

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BGSA12GN10E6327XTSA1

Telecom Circuit,

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BGSA12GN10E6327_15

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BGSA12UGL8

BGSA12UGL8 是一款多功能单刀双掷(SPDT)射频天线孔径开关,针对低 Coff 以及高达 6.0 Ghz 的低 Ron 使能应用进行了优化。该单电源芯片集成了 2 位控制逻辑,具有低电流待机模式。与 GaAs 技术不同,0.1 dB 压缩点超出了开关的最大输入功率水平,从而在所有信号电平下实现了线性性能,只有在外部施加直流电压时,才需要射频端口上的外部直流阻塞电容器。由于其极高的 RF 电压耐用性,它适用于在 RF 匹配电路中切换任何无功设备,如电感器和电容器,而不会在质量因素方面造成重大损失。

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BGSA13GN10

Maximizing battery life and data rate for 3G/4G mobile devices

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BGSA13GN10E6327

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BGSA141MN10E6327XTSA1

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BGSA142M2N12

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BGSA142MN12

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BGSA143GL10

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BGSA143ML10E6327XTSA1

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BGSA147ML10

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BGSA14GN10

Maximizing battery life and data rate for 3G/4G mobile devices

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