BGSA11GN10 [INFINEON]
BGSA11GN10 是双单刀单掷（SPST）射频天线调谐开关，针对高达 5.0 Ghz 的低 Ronenabling 应用进行了优化。该单电源芯片集成了片上 CMOS 逻辑，该逻辑由一个简单的单引脚兼容 CMOS 或 TTL 的控制输入信号驱动。0.1 dB压缩点超出了开关的最大输入功率水平，从而在所有信号电平下实现了线性性能。与 GaAs 技术不同，0.1 dB压缩点超出了开关的最大输入功率水平，从而在所有信号电平下实现了线性性能。只有在外部施加直流电压时才需要 RF 端口的外部直流隔离电容器。由于其极高的 RF 电压耐用性，其适用于在 RF 匹配电路中切换任何无功设备，如电感器和电容器，而不会在质量因素方面造成重大损失。;
| 型号： | BGSA11GN10 |
| 厂家： | 
Infineon |
| 描述： | BGSA11GN10 是双单刀单掷（SPST）射频天线调谐开关，针对高达 5.0 Ghz 的低 Ronenabling 应用进行了优化。该单电源芯片集成了片上 CMOS 逻辑，该逻辑由一个简单的单引脚兼容 CMOS 或 TTL 的控制输入信号驱动。0.1 dB压缩点超出了开关的最大输入功率水平，从而在所有信号电平下实现了线性性能。与 GaAs 技术不同，0.1 dB压缩点超出了开关的最大输入功率水平，从而在所有信号电平下实现了线性性能。只有在外部施加直流电压时才需要 RF 端口的外部直流隔离电容器。由于其极高的 RF 电压耐用性，其适用于在 RF 匹配电路中切换任何无功设备，如电感器和电容器，而不会在质量因素方面造成重大损失。 开关 驱动 射频 电容器 电感器 射频天线 |
| 文件： | 总18页 (文件大小：907K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BGSA11GN10
Dual Single Pole Single Throw Antenna Tuning Switch
Features
• Designed for high linearity and high RF voltage tuning applications
• Multiple selectable switch configurations:
Each throw directly and independently controlled
• Low RON resistance of 1.0 Ω at each port in ON state,
0.5 Ω using both SPST in parallel
• Low COFF capacitance of 250 fF at each port in OFF state
• High bidirectional RF operating voltage of 36 V in OFF state
• Low harmonic generation
• 2 GPIO pins control interface
1.1x1.5mm2
• Supply voltage range: 1.65 to 3.6 V
• No RF parameter change within supply voltage range
• Small form factor 1.1 mm x 1.5 mm (MSL1, 260◦C per JEDEC J-STD-020)
• RoHS and WEEE compliant package
Potential Applications
• Impedance Tuning
• Antenna Tuning
• Inductance Tuning
• Tunable Filters
Product Validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Block Diagram
VDD
RFC
Voltage
Regulator
ESD
Driver
Driver
CTRL1
CTRL2
Chargepump
Data Sheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
Revision 3.2
2020-07-08
BGSA11GN10
Dual Single Pole Single Throw Antenna Tuning Switch
Table of Contents
Table of Contents
1
Features
2
3
2
3
4
5
6
7
8
9
Maximum Ratings
DC Characteristics
5
RF Small Signal Characteristics
RF large signal parameter
Logic Truth Table
7
8
9
Application Information
Application Examples
Package Information
10
11
14
Data Sheet
1
Revision 3.2
2020-07-08
BGSA11GN10
Dual Single Pole Single Throw Antenna Tuning Switch
Features
1 Features
• Designed for high linearity and high RF voltage tuning applications
• Multiple selectable switch configurations:
Each throw directly and independently controlled
• Low RON resistance of 1.0 Ω at each port in ON state,
0.5 Ω using both SPST in parallel
• Low COFF capacitance of 250 fF at each port in OFF state
• High bidirectional RF operating voltage of 36 V in OFF state
• Low harmonic generation
• 2 GPIO pins control interface
• Supply voltage range: 1.65 to 3.6 V
• No RF parameter change within supply voltage range
•
Small form factor 1.1 mm x 1.5 mm (MSL1, 260◦C per JEDEC J-STD-020)
• RoHS and WEEE compliant package
Description
The BGSA11GN10 is a Dual Single Pole Single Throw (SPST) RF antenna aperture switch optimized for low COFF enabling
applications up to 6.0 GHz. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL
compatible control input signal. Unlike GaAs technology, the 0.1dB compression point exceeds the switch maximum input
power level, resulting in linear performance at all signal levels and external DC blocking capacitors at the RF ports are only
required if DC voltage is applied externally. Due to its very high RF voltage ruggedness it is suited for switching any reactive
devices such as inductors and capacitors in RF matching circuits without significant losses in quality factors.
Product Name
Marking
Package
BGSA11GN10
11
TSNP-10-1
Data Sheet
2
Revision 3.2
2020-07-08
BGSA11GN10
Dual Single Pole Single Throw Antenna Tuning Switch
Maximum Ratings
2 Maximum Ratings
Table 1: Maximum Ratings, Table I at TA = 25 ◦C, unless otherwise specified
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
0.1
Typ.
–
–
Max.
–
1)
Frequency Range
Supply voltage 2)
f
GHz
V
VDD
-0.5
3.6
Only for infrequent and short
duration time periods
–
Storage temperature range
RF input power
TSTG
-55
–
–
–
150
39
◦C
PRF_max
dBm
Pulsed RF input power, duty
cycle of 25 % with T_period=
4620
Fig. 1
µ
s, ON-state, setup as of
RF voltage
VRF_max
–
–
48
V
Short term peaks (1
µ
s, duty cy-
cle 0.1%), Isolation mode, test
setup acc. Fig. 2 / Fig. 3 and
exceeding typical linearity, RON
and COFF parameters
ESD capability, CDM 3)
VESD
-1
-1
-8
–
–
–
+1
+1
+8
kV
kV
kV
CDM
ESD capability, HBM 4)
VESD
HBM
ESD capability, system level (RF port) 5)
VESD
RF vs system GND, with 27 nH
ANT
shunt inductor
Junction temperature
TJ
–
–
0
–
–
–
125
45
0
◦C
K/W
V
–
Thermal resistance junction - soldering point RthJS
Maximum DC-voltage on RF-Ports and RF- VRFDC
Ground
–
No DC voltages allowed on RF-
Ports
–
Control Voltage Levels
VCtrlx
-0.7
–
–
1
VDD+0.7
(max.
3.6)
V
Moisture Sensitivity Level
MSL
–
–
1) Switch has a low-pass response. For higher frequencies, losses have to be considered for their impact on thermal heating. The DC voltage at RF ports VRFDC has
to be 0 V.
2) Note: Consider potential ripple voltages on top of VIO. Including RF ripple, VIO must not exceed the maximum ratings: VCtrl = VDC + VRipple
.
3) Field-Induced Charged-Device Model ANSI/ESDA/JEDEC JS-002. Simulates charging/discharging events that occur in production equipment and processes.
Potential for CDM ESD events occurs whenever there is metal-to-metal contact in manufacturing.
4) Human Body Model ANSI/ESDA/JEDEC JS-001 (R = 1,5 kΩ, C = 100 pF).
5) IEC 61000-4-2 (R = 330 Ω, C = 150 pF), contact discharge.
Warning: Stresses above the max. values listed here may cause permanent damage to the device. Maximum ratings
are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Expo-
sure to conditions at or below absolute maximum rating but above the specified maximum operation conditions may
aꢀect device reliability and life time. Functionality of the device might not be given under these conditions.
Data Sheet
3
Revision 3.2
2020-07-08
BGSA11GN10
Dual Single Pole Single Throw Antenna Tuning Switch
Maximum Ratings
50 Ohm
50 Ohm Transmission Line
SIGNAL
VDD
RFC
SOURCE
Voltage
ESD
Regulator
Driver
CTRL1
CTRL2
Driver
Chargepump
GND RF1 RF2
Spectrum
Analyser
(Hx Monitor)
RF1/RF2
Power
Meter
ON MODE*
(tested series on, all others off)
Figure 1: RF operating and Harmonics generation measurement configuration - RFx ON mode
Spectrum
Analyser
50 Ohm
(Hx Monitor)
50 Ohm Transmission Line
SIGNAL
SOURCE
Power
Meter
Vrf
VDD
RFC
Voltage
Regulator
ESD
ALL THROWS
Driver
Driver
OPERATED IN ISO
POSITION Grounded
except of ON mode path
CTRL1
CTRL2
Chargepump
RF1
RF2
GND
Figure 2: RF operating voltage measurement configuration - OFF mode at RFC
Data Sheet
4
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2020-07-08
BGSA11GN10
Dual Single Pole Single Throw Antenna Tuning Switch
DC Characteristics
Spectrum
Analyser
(Hx Monitor)
50 Ohm
50 Ohm Transmission Line
SIGNAL
SOURCE
Power
Meter
Vrf
RF1
RF2
VDD
Voltage
Regulator
ESD
RF THROW
OPERATED IN ISO
POSITION
Driver
Driver
CTRL1
CTRL2
Chargepump
RFC
GND
Figure 3: RF operating voltage measurement configuration - OFF mode at RFx
3 DC Characteristics
Table 2: DC Characteristics at TA = −40 ◦C to 85 ◦C
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
1.65
–
Typ.
2.8
80
–
Max.
3.6
150
0.45
2.85
1
Supply voltage
VDD
V
–
Supply current
IDD
µA
V
–
Control voltage low
Control voltage high
Control current low
Control current high
Ambient temperature
RF switching time
VCtrl,low
VCtrl,high
ICtrl,low
ICtrl,high
TA
0
–
1.2
-1
1.8
0
V
VCtrl,high < VDD
–
VCtrl,high < VDD
–
µA
µA
◦C
µs
-1
0
1
-40
2
25
5
85
tST
7
PIN = 0 dBm, Z0 = 50 Ω,
TA = −40 ◦C... + 85 ◦C
VDD = 1.65 − 3.6 V
Refering Fig. 4 and Fig. 5
Startup time
tPup
–
20
30
µs
Data Sheet
5
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BGSA11GN10
Dual Single Pole Single Throw Antenna Tuning Switch
DC Characteristics
VDD
t Pup
CTRL
t ST
90%
RF Signal
Figure 4: Switching Time Definition
VDD
CTRL
RF Signal
Ac�ve
Close-down
Start-up
Figure 5: Timing of Control and RF signals for valid operation
Data Sheet
6
Revision 3.2
2020-07-08
BGSA11GN10
Dual Single Pole Single Throw Antenna Tuning Switch
RF Small Signal Characteristics
4 RF Small Signal Characteristics
Table 3: RF small signal specifications
Parameter
Symbol
Values
Typ.
–
Unit
Note / Test Condition
Min.
0.1
Max.
6.0
Frequency range
f
GHz
Ω
–
Switch ON resistance
Switch OFF capacitance
Insertion Loss (1,2,3)
824 - 960 MHz
1710 - 1980 MHz
1981 - 2169 MHz
RON
COFF
0.7
1.0
1.5
RFx to RFC
RFx to RFC
200
250
350
fF
0.10
0.24
0.28
0.29
0.19
0.34
0.36
0.5
0.29
0.43
0.43
0.69
dB
dB
dB
dB
VDD = 1.8 − 3.6 V,
TA = −40 ◦C... + 85 ◦C,
Z0 = 50 Ω,
IL
2170 - 2690 MHz
Return Loss(1,2,3)
RF1 or RF2 switched to RFC
VDD = 1.8 − 3.6 V,
TA = −40 ◦C... + 85 ◦C,
Z0 = 50 Ω
All Ports @ 824 - 915 MHz
All Ports @ 1710 - 2169 MHz
All Ports @ 2170 - 2690 MHz
Isolation RFx to RFC(1,2,3)
824 - 915 MHz
1710 - 1980 MHz
1981 - 2169 MHz
2170 - 2690 MHz
Isolation RFx to RFx(1,2,3)
824 - 915 MHz
1710 - 1980 MHz
1981 - 2169 MHz
2170 - 2690 MHz
20
16
12
25
18
15
30
20
18
dB
dB
dB
RL
16
14
13
9
17
12
11
19
11
11
11
dB
dB
dB
dB
VDD = 1.8 − 3.6 V,
TA = −40 ◦C... + 85 ◦C,
Z0 = 50 Ω
ISO
ISO
10
21
16
15
13
22
17
16
15
24
18
17
17
dB
dB
dB
dB
VDD = 1.8 − 3.6 V,
TA = −40 ◦C... + 85 ◦C,
Z0 = 50 Ω
1) Valid for all RF power levels, no compression behavior
2) Network analyser input power: PIN = −20 dBm
3)On application board without any matching components
Data Sheet
7
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2020-07-08
BGSA11GN10
Dual Single Pole Single Throw Antenna Tuning Switch
RF large signal parameter
5 RF large signal parameter
Table 4: RF large signal specifications
Parameter
Symbol
Values
Typ.
–
Unit
V
Note / Test Condition
Min.
–
Max.
36
RF operating voltage
VRF_peak
Harmonic Generation up to 12.75 GHz(1,2,3)
All RF Ports - Second Order Harmon- PH2
ics
–
90
–
dBc
25 dBm, 50Ω, f0 = 786 MHz
All RF Ports - Third Order Harmonics PH3
All RF Ports - Second Order Harmon- PH2
ics
–
–
115
90
–
–
dBc
dBc
25 dBm, 50Ω, f0 = 786 MHz
33 dBm, 50Ω, f0 = 824 MHz
All RF Ports - Third Order Harmonics PH3
–
110
–
–
–
dBc
dBc
33 dBm, 50Ω, f0 = 824 MHz
25 dBm, 50Ω, CW mode
All RF Ports
PHx
105
Intermodulation Distortion IMD2 (1,2,3)
IIP2, low
IIP2,l
–
–
110
–
–
dBm
dBm
IIP2 conditions table 8
IIP2, high
IIP2,h
120
Intermodulation Distortion IMD3 (1,2,3)
IIP3
IIP3
–
–
75
75
–
–
dBm
dBm
IIP3 conditions table 9
SV LTE Intermodulation (1,2,3)
IIP3,SVLTE
IIP3,SV
SV-LTE conditions table 10
1)Terminating Port Impedance: Z0 = 50 Ω 2)Supply Voltage: VDD = 1.8 − 3.6 V 3)On application board without any matching components
Table 5: IIP2 conditions table
Band
In-Band Frequency
Blocker Frequency 1
Blocker Power 1
Blocker Frequency 2
Blocker Power 2
[MHz]
2140
[MHz]
1950
[dBm]
20
[MHz]
190
[dBm]
-15
Band 1 Low
Band 1 High
Band 5 Low
Band 5 High
2140
1950
20
4090
45
-15
881.5
881.5
836.5
836.5
20
-15
20
1718
-15
Table 6: IIP3 conditions table
Band
In-Band Frequency
Blocker Frequency 1
Blocker Power 1
Blocker Frequency 2
Blocker Power 2
[MHz]
2140
[MHz]
1950
[dBm]
20
[MHz]
1760
[dBm]
-15
Band 1
Band 5
881.5
836.5
20
791.5
-15
Table 7: SV-LTE conditions table
Band
In-Band Frequency
Blocker Frequency 1
Blocker Power 1
Blocker Frequency 2
Blocker Power 2
[MHz]
872
[MHz]
827
[dBm]
23
[MHz]
872
[dBm]
14
Band 5
Band 13
Band 20
747
786
23
747
14
878
833
23
2544
14
Data Sheet
8
Revision 3.2
2020-07-08
BGSA11GN10
Dual Single Pole Single Throw Antenna Tuning Switch
Logic Truth Table
6 Logic Truth Table
Table 8: Logic Table
CTRL 1
CTRL 2
Mode RF1 to RFc
Mode RF2 to RFc2
0
0
1
0
1
OFF
OFF
ON
OFF
ON
0
1
OFF
ON
1
ON
CTRL1 and CTRL 2 can be connected together to control both switches at once. This enables the use of both SPSTs to reduce Ron by parallel
switching
Data Sheet
9
Revision 3.2
2020-07-08
BGSA11GN10
Dual Single Pole Single Throw Antenna Tuning Switch
Application Information
7 Application Information
Pin Configuration and Function
RFC
10
9
8
1
RF1 2
GND 3
VDD 4
RF2
7 GND
6
CTRL 2
5
CTRL 1
Figure 6: BGSA11GN10 Pin Configuration (top view)
Table 9: Pin Definition and Function
Pin No.
1
Name
N.C.
Function
Not connected
RF1 port
2
3
4
5
6
7
8
9
10
RF1
GND
VDD
Ground
Power Supply
GPIO digital control line
GPIO digital control line
Ground
CTRL1
CTRL2
GND
RF2
RF2 port
N.C.
Not connected
Common RF
RFC
Data Sheet
10
Revision 3.2
2020-07-08
BGSA11GN10
Dual Single Pole Single Throw Antenna Tuning Switch
Application Examples
8 Application Examples
The BGSA11GN10 is a dual single pole single throw (SPST) RF switch in a 1.05 mm x 1.55 mm TSNP-10-1 package. Both SPST can be controlled
individually by the control placed next to each other. This solution allows the use of the device for several applications shown in Fig. 7:
• Low RON = 1Ω SPST (a) or ultra low RON = 0.5Ω SPST (b)
• Tuning with 2 reactive devices such as capacitors or inductors. (c)
• Combinations of above.
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Figure 7: BGSA11GN10 realizable circuit configurations
Single SPST shunt operation
The configuration (a) is used to obtain an RON = 1Ω and COFF = 250fF. It can be used for series and shunt configurations. Note, that for single
SPST shunt configuration, is is better to connect RFC to GND to avoid additional capacitance contribution of the unused part RF2 to GND as
shown in Fig. 8. For simplicity, connecting the unused RF and Control Pin can be connected to ground.
Figure 8: BGSA11GN10 single SPST shunt configuration
Data Sheet
11
Revision 3.2
2020-07-08
BGSA11GN10
Dual Single Pole Single Throw Antenna Tuning Switch
Application Examples
Low RON SPST shunt operation
For lowest possible RON = 0.5
Ω
operation, it is required to connect the logic inputs CTRL 1 with CTRL 2 together and same for RF1 and RF2 as
shown in Fig. 9
ꢀꢁꢇ
ꢀꢁꢊ
Figure 9: BGSA11GN10 low RON SPST shunt configuration
Dual SPST for RF tuning
The dual SPST can also be used for tuning applications, for example to tune capacitance or inductance. Fig. 10 shows as example a tunable
capacitance with 4 steps by using 2 external MLCC capacitors. Note that the RF voltage should not exceed the specified 36 V over the switch
device and also not for the used capacitor.
Figure 10: BGSA11GN10 as shunt capacitance tuning device
For example, resulting capacitances using C1 and C2 can be controlled as shown in table 10. Resulting Q factors can be calculated using
1
ωL
R
ON
ωC
R
the RON values using the equation Q =
with ω = 2πf. Same function can be realized also with inductors (Fig. 11) with Q =
in table 11.
ON
Data Sheet
12
Revision 3.2
2020-07-08
BGSA11GN10
Dual Single Pole Single Throw Antenna Tuning Switch
Application Examples
ꢈꢂ
ꢈꢊ
ꢈꢂ
ꢈꢊ
Figure 11: BGSA11GN10 as shunt inductance tuning device
Table 10: Logic Table
CTRL 1
CTRL 2
Mode RF1 to RFc
Mode RF2 to RFc
Capacitance
RON
0
0
1
0
1
OFF
OFF
ON
OFF
ON
500 fF
500 kΩ
1 Ω
250 fF + C2
250 fF + C1
C1 + C2
0
1
OFF
ON
1 Ω
1
ON
0,5 Ω
Table 11: Logic Table
CTRL 1
CTRL 2
Mode RF1 to RFc
Mode RF2 to RFc
Inductance
RON
0
0
1
0
1
OFF
OFF
ON
OFF
ON
-
500 kΩ
1 Ω
L2
0
1
OFF
ON
L1
1 Ω
1
ON
L1 || L2
0,5 Ω
Data Sheet
13
Revision 3.2
2020-07-08
BGSA11GN10
Dual Single Pole Single Throw Antenna Tuning Switch
Package Information
9 Package Information
Table 12: Mechanical Data
Parameter
X-Dimension
Y-Dimension
Size
Symbol
X
Value
Unit
mm
mm
mm2
mm
1.1 ± 0.05
1.5 ± 0.05
2.25
Y
Size
H
Height
0.375 +0.025/−0.015
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ꢠ
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ꢟ
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ꢝ
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Figure 12: TSNP-10-1 Package Outline (top, side and bottom views)
Pin 1 marking
Date code (YW)
Type code
TSNP-10-1MK V02
Figure 13: TSNP10-1 Marking Specification (top view): Date code digits Y and W defined in Table 13/14
Data Sheet
14
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2020-07-08
BGSA11GN10
Dual Single Pole Single Throw Antenna Tuning Switch
Package Information
Table 13: Year date code marking - digit "Y"
Year
2010
2011
2012
2013
2014
2015
2016
2017
2018
2019
"Y"
0
1
Year
"Y"
0
1
Year
"Y"
0
1
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
2030
2031
2032
2033
2034
2035
2036
2037
2038
2039
2
2
2
3
3
3
4
4
4
5
5
5
6
7
6
7
6
7
8
9
8
9
8
9
Table 14: Week date code marking - digit "W"
Week
"W"
Week
"W"
N
P
Week
"W"
4
Week
34
35
"W"
h
j
Week
45
"W"
v
1
A
12
23
2
B
13
24
5
46
47
x
3
C
14
Q
R
25
6
36
37
k
l
y
4
5
D
E
15
26
27
7
48
49
50
51
z
16
S
a
38
39
40
41
n
p
q
r
8
6
7
F
17
T
28
29
30
31
b
c
9
G
H
J
18
U
V
2
8
9
10
11
19
d
e
52
3
20
21
W
Y
42
43
s
53
M
K
32
f
t
L
22
Z
33
g
44
u
Data Sheet
15
Revision 3.2
2020-07-08
BGSA11GN10
Dual Single Pole Single Throw Antenna Tuning Switch
Package Information
ꢟꢑꢊꢎꢖꢌꢐꢏxꢔꢖꢏꢗꢋꢒxꢘꢐꢔꢙxꢗꢐꢘ
ꢅꢆꢞxꢆꢚꢇꢝ
ꢆꢚꢛ
ꢆꢚꢛ
ꢆꢚꢛ
ꢅꢆꢞxꢆꢚꢇꢝ
ꢁꢖꢏꢗꢋꢒxꢘꢐꢔꢙ
ꢆꢚꢛ
ꢁꢊꢋꢌꢍꢎꢏxꢐꢑꢋꢒꢊꢓꢒꢋꢔ
ꢕꢖꢑꢑꢋꢒ
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢄꢈꢃx ꢉꢆꢅ
Figure 14: Land pattern and stencil mask (TSNP-10-1)
ꢁꢂꢃ
ꢀ
ꢄꢅꢆꢇꢈꢇ
ꢉꢊꢋꢌꢅꢆꢍ
ꢈꢂꢎ
ꢑꢒꢓꢄꢔꢈꢁꢔꢈꢔꢑꢄꢇ ꢕꢁꢈ
Figure 15: Carrier Tape (TSNP-10-1)
Data Sheet
16
Revision 3.2
2020-07-08
Revision History
Creation of document Revision 3.2, 2020-07-08
Page or Item
5
Subjects (major changes since previous revision)
Typo at max. control current high corrected
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BGSA12UGL8
BGSA12UGL8 是一款多功能单刀双掷(SPDT)射频天线孔径开关，针对低 Coff 以及高达 6.0 Ghz 的低 Ron 使能应用进行了优化。该单电源芯片集成了 2 位控制逻辑，具有低电流待机模式。与 GaAs 技术不同，0.1 dB 压缩点超出了开关的最大输入功率水平，从而在所有信号电平下实现了线性性能，只有在外部施加直流电压时，才需要射频端口上的外部直流阻塞电容器。由于其极高的 RF 电压耐用性，它适用于在 RF 匹配电路中切换任何无功设备，如电感器和电容器，而不会在质量因素方面造成重大损失。
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