BSC009N04LSSC [INFINEON]
OptiMOS™ 5 power MOSFETs 40 V in SuperSO8 DSC (dual-side cooling) package offer all thermal management benefits of dual-side cooling solutions with industry-standard footprint.;
| 型号： | BSC009N04LSSC |
| 厂家： | 
Infineon |
| 描述： | OptiMOS™ 5 power MOSFETs 40 V in SuperSO8 DSC (dual-side cooling) package offer all thermal management benefits of dual-side cooling solutions with industry-standard footprint. |
| 文件： | 总11页 (文件大小：1065K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSC009N04LSSC
MOSFET
OptiMOSTMꢀPower-MOSFET,ꢀ40ꢀV
PG-WSON-8
Features
•ꢀDual-sideꢀcooledꢀpackageꢀwithꢀlowestꢀjunction-topꢀthermalꢀresistance
•ꢀOptimizedꢀforꢀsychronousꢀrectification
•ꢀ175ꢀ°Cꢀrated
tab
5
6
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)
7
8
•ꢀ100%ꢀavalancheꢀtested
•ꢀSuperiorꢀthermalꢀresistance
•ꢀN-channel,ꢀlogicꢀlevel
4
3
2
1
•ꢀPb-freeꢀleadꢀꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
Drain
Pin 5-8
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
Gate
Pin 4
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Source
Pin 1-3, tab
Parameter
Value
Unit
VDS
40
V
RDS(on),max
ID
0.94
301
84
mΩ
A
Qoss
nC
nC
Qg(0V..10V)
95
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
BSC009N04LSSC
PG-WSON-8
009N04SC
-
Final Data Sheet
1
Rev.ꢀ2.1,ꢀꢀ2022-10-06
OptiMOSTMꢀPower-MOSFET,ꢀ40ꢀV
BSC009N04LSSC
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2022-10-06
OptiMOSTMꢀPower-MOSFET,ꢀ40ꢀV
BSC009N04LSSC
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
-
-
-
-
-
-
301
213
262
185
40
VGS=10ꢀV,ꢀTC=25ꢀ°C
VGS=10ꢀV,ꢀTC=100ꢀ°C
VGS=4.5ꢀV,ꢀTC=25ꢀ°C
Continuous drain current1)
ID
A
VGS=4.5ꢀV,ꢀTC=100ꢀ°C
VGS=10ꢀV,ꢀTA=25ꢀ°C,ꢀRthJA=50ꢀK/W2)
Pulsed drain current3)
ID,pulse
IAS
-
-
-
-
-
1204
50
A
TC=25ꢀ°C
Avalanche current, single pulse4)
Avalanche energy, single pulse
Gate source voltage5)
-
A
TC=25ꢀ°C
EAS
VGS
-
330
20
mJ
V
ID=50ꢀA,ꢀRGS=25ꢀΩ
-20
-
-
-
-
-
167
3.0
TC=25ꢀ°C
Power dissipation
Ptot
W
TA=25ꢀ°C,ꢀRthJA=50ꢀK/W2)
Operating and storage temperature
Tj,ꢀTstg
-55
-
175
°C
-
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case,
bottom
RthJC
RthJC
RthJA
-
0.5
0.43
-
0.9
K/W
K/W
K/W
-
-
-
Thermal resistance, junction - case,
top
-
-
0.86
50
Device on PCB,
6 cm2 cooling area2)
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See Diagram 3 for more detailed information
4) See Diagram 13 for more detailed information
5) The negative rating is for low duty cycle pulse occurrence. No continuous rating is implied
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2022-10-06
OptiMOSTMꢀPower-MOSFET,ꢀ40ꢀV
BSC009N04LSSC
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
40
Typ.
Max.
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
-
-
-
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
1.2
2
VDS=VGS,ꢀID=250ꢀµA
-
-
0.1
10
1
100
VDS=40ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=40ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
10
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
0.96
0.78
1.24
0.94
VGS=4.5ꢀV,ꢀID=50ꢀA
VGS=10ꢀV,ꢀID=50ꢀA
RDS(on)
mΩ
Gate resistance1)
Transconductance
RG
gfs
-
0.8
1.6
-
Ω
-
140
280
S
|VDS|>2|ID|RDS(on)max,ꢀID=50ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance1)
Output capacitance1)
Reverse transfer capacitance1)
Ciss
Coss
Crss
-
-
-
6800 9520 pF
1900 2660 pF
VGS=0ꢀV,ꢀVDS=20ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=20ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=20ꢀV,ꢀf=1ꢀMHz
160
10
320
-
pF
ns
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,
RG,ext,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,
RG,ext,ext=1.6ꢀΩ
12
46
9
-
-
-
ns
ns
ns
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,
RG,ext,ext=1.6ꢀΩ
Turn-off delay time
Fall time
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,
RG,ext,ext=1.6ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
16
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge1)
Switching charge
Qgs
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=20ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ10ꢀV
Qg(th)
Qgd
11
-
15
21
-
Qsw
21
Gate charge total1)
Qg
95
133
-
Gate plateau voltage
Gate charge total1)
Vplateau
Qg
2.4
49
69
-
nC
nC
nC
Gate charge total, sync. FET
Output charge1)
Qg(sync)
Qoss
84
84
118
VDD=20ꢀV,ꢀVGS=0ꢀV
1) Defined by design. Not subject to production test
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2022-10-06
OptiMOSTMꢀPower-MOSFET,ꢀ40ꢀV
BSC009N04LSSC
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
-
Max.
160
1204
1
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
A
TC=25ꢀ°C
Diode forward voltage
Reverse recovery time1)
0.80
36
50
V
VGS=0ꢀV,ꢀIF=50ꢀA,ꢀTj=25ꢀ°C
VR=20ꢀV,ꢀIF=50A,ꢀdiF/dt=400ꢀA/µs
VR=15ꢀV,ꢀIF=IS,ꢀdiF/dt=400ꢀA/µs
72
ns
nC
Reverse recovery charge
Qrr
-
1) Defined by design. Not subject to production test
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2022-10-06
OptiMOSTMꢀPower-MOSFET,ꢀ40ꢀV
BSC009N04LSSC
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
175
320
280
240
200
160
120
80
150
125
100
75
50
25
40
0
0
0
25
50
75
100
125
150
175
200
0
25
50
75
100
125
150
175
200
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
104
100
0.5
0.2
103
102
101
100
10-1
10-2
1 µs
10 µs
100 µs
0.1
10-1
1 ms
0.05
0.02
0.01
10 ms
DC
10-2
single pulse
10-3
10-1
100
101
102
10-6
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2022-10-06
OptiMOSTMꢀPower-MOSFET,ꢀ40ꢀV
BSC009N04LSSC
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
1250
2.4
4 V
4.5 V
5 V
2.8 V
10 V
3 V
2.0
1000
3.5 V
1.6
1.2
0.8
0.4
0.0
3.5 V
750
500
250
0
4 V
4.5 V
5 V
10 V
3 V
2.8 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
100
200
300
400
500
600
700
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
1250
600
500
400
300
200
100
0
1000
750
500
250
175 °C
25 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
25
50
75
100
125
150
175
200
VGSꢀ[V]
IDꢀ[A]
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
gfs=f(ID),ꢀVDS=3ꢀV,ꢀTj=25ꢀ°C
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2022-10-06
OptiMOSTMꢀPower-MOSFET,ꢀ40ꢀV
BSC009N04LSSC
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.4
2.0
2.0
1.6
1.2
0.8
0.4
0.0
1.6
1.2
2500 µA
250 µA
0.8
0.4
0.0
-75 -50 -25
0
25 50 75 100 125 150 175 200
-75 -50 -25
0
25 50 75 100 125 150 175 200
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj),ꢀID=25ꢀA,ꢀVGS=10ꢀV
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
104
Ciss
25 °C
25 °C, max
175 °C
175 °C, max
Coss
103
102
101
103
102
101
Crss
0
5
10
15
20
25
30
35
40
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2022-10-06
OptiMOSTMꢀPower-MOSFET,ꢀ40ꢀV
BSC009N04LSSC
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
10
20 V
32 V
8 V
8
6
4
2
0
25 °C
100 °C
150 °C
101
100
100
101
102
103
0
20
40
60
80
100
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start
VGS=f(Qgate),ꢀID=50ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀMin.ꢀdrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
45
44
43
42
41
40
39
38
37
-75 -50 -25
0
25 50 75 100 125 150 175 200
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2022-10-06
OptiMOSTMꢀPower-MOSFET,ꢀ40ꢀV
BSC009N04LSSC
5ꢀꢀꢀꢀꢀPackageꢀOutlines
DOCUMENT NO.
Z8B00184589
MILLIMETERS
DIMENSION
REVISION
03
MIN.
MAX.
0.75
0.05
0.45
A
A1
b
-
-
SCALE 10:1
0.35
c
0.203
3.03
2mm
0
1
D
4.95
4.11
5.05
4.31
D1
D2
E
EUROPEAN PROJECTION
5.95
3.66
6.05
3.86
E1
E2
e
4.11
1.27
L1
L2
aaa
ddd
0.675
0.625
0.775
0.825
ISSUE DATE
03.06.2019
0.05
0.10
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-WSON-8,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2022-10-06
OptiMOSTMꢀPower-MOSFET,ꢀ40ꢀV
BSC009N04LSSC
RevisionꢀHistory
BSC009N04LSSC
Revision:ꢀ2022-10-06,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
Release of final version
Update "Features"
2022-08-04
2022-10-06
Trademarks
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Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
TechnologiesꢀOfficeꢀ(www.infineon.com).
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2022-10-06
相关型号：
BSC009NE2LS
英飞凌凭借全新的 OptiMOS™ 25V 产品系列，为分离功率 MOSFET设定了功率密度和能源效率的新标准。OptiMOS™ 25V 具有极低接通电阻，采用小体积封装，特别适用于要求极高的电池管理、Or-ing、电熔丝和热交换应用。超级 SO8 封装具有标准体积，与 IPB009N03L 相比，支持更薄更小的应用解决方案。
INFINEON
BSC010N04LS6
Power Field-Effect Transistor, 100A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8
INFINEON
BSC010N04LSATMA1
Power Field-Effect Transistor, 38A I(D), 40V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC010N04LSC
The BSC010N04LSC is the perfect choice for battery powered tools. The OptiMOS™ 5 40V technology also provides the best performance for synchronous rectification in switched mode power supplies (SMPS), commonly found in servers and desktops, and a broad range of industrial applications including telecom, solar micro inverters and fast switching DC-DC converters.
INFINEON
BSC010N04LSIATMA1
Power Field-Effect Transistor, 37A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8, 8 PIN
INFINEON
BSC010NE2LSATMA1
Power Field-Effect Transistor, 40A I(D), 25V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC010NE2LSIATMA1
Power Field-Effect Transistor, 38A I(D), 25V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
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