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BSC033N08NS5SC [INFINEON]

OptiMOS™ 5 power MOSFETs 80 V in SuperSO8 DSC (dual-side cooling) package offer all thermal management benefits of dual-side cooling solutions with industry-standard footprint.;
BSC033N08NS5SC
型号： BSC033N08NS5SC
厂家： Infineon    Infineon
描述：

OptiMOS™ 5 power MOSFETs 80 V in SuperSO8 DSC (dual-side cooling) package offer all thermal management benefits of dual-side cooling solutions with industry-standard footprint.
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BSC033N08NS5SC  
MOSFET  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ80ꢀV  
PG-WSON-8  
Features  
•ꢀDual-sideꢀcooledꢀpackageꢀwithꢀlowestꢀJunction-topꢀthermalꢀresistance  
•ꢀOptimizedꢀforꢀsynchronousꢀrectificationꢀinꢀserverꢀandꢀdesktop  
•ꢀ100%ꢀavalancheꢀtested  
tab  
5
6
•ꢀSuperiorꢀthermalꢀresistance  
7
8
•ꢀN-channel  
•ꢀ175°Cꢀrated  
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
4
3
2
1
Productꢀvalidation  
Drain  
Pin 5-8  
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications  
Gate  
Pin 4  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
Value  
Unit  
Source  
Pin 1-3, tab  
VDS  
80  
V
RDS(on),max  
ID  
3.3  
144  
61  
mΩ  
A
Qoss  
nC  
nC  
QG(0V..10V)  
53  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
BSC033N08NS5SC  
PG-WSON-8  
033N08SC  
-
Final Data Sheet  
1
Rev.ꢀ2.1,ꢀꢀ2022-10-06  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ80ꢀV  
BSC033N08NS5SC  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Final Data Sheet  
2
Rev.ꢀ2.1,ꢀꢀ2022-10-06  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ80ꢀV  
BSC033N08NS5SC  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
-
-
144  
102  
21  
VGS=10ꢀV,ꢀTC=25ꢀ°C  
Continuous drain current1)  
ID  
A
VGS=10ꢀV,ꢀTC=100ꢀ°C  
VGS=10ꢀV,ꢀTC=25ꢀ°C,ꢀRthJAꢀ=50K/W2)  
Pulsed drain current3)  
Avalanche energy, single pulse4)  
ID,pulse  
EAS  
-
-
-
-
576  
150  
20  
A
TC=25ꢀ°C  
-
mJ  
V
ID=50ꢀA,ꢀRGS=25ꢀΩ  
Gate source voltage  
VGS  
-20  
-
-
-
-
-
136  
3.0  
TC=25ꢀ°C  
Power dissipation  
Ptot  
W
TA=25ꢀ°C,ꢀRthJA=50ꢀK/W2)  
IEC climatic category;  
DIN IEC 68-1: 55/175/56  
Operating and storage temperature  
Tj,ꢀTstg  
-55  
-
175  
°C  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - case,  
bottom  
RthJC  
RthJC  
RthJA  
-
0.6  
0.43  
-
1.1  
K/W  
K/W  
K/W  
-
-
-
Thermal resistance, junction - case,  
top  
-
-
0.86  
50  
Device on PCB,  
6 cm2 cooling area2)  
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature  
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual  
environmental conditions.  
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
3) See Diagram 3 for more detailed information  
4) See Diagram 13 for more detailed information  
Final Data Sheet  
3
Rev.ꢀ2.1,ꢀꢀ2022-10-06  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ80ꢀV  
BSC033N08NS5SC  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
80  
Typ.  
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
VGS(th)  
-
V
V
VGS=0ꢀV,ꢀID=1ꢀmA  
VDS=VGS,ꢀID=76ꢀµA  
2.2  
3
3.8  
-
-
0.1  
10  
1
100  
VDS=80ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=80ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
IDSS  
µA  
nA  
IGSS  
-
10  
100  
VGS=20ꢀV,ꢀVDS=0ꢀV  
-
-
3.0  
4.0  
3.3  
5.4  
VGS=10ꢀV,ꢀID=50ꢀA  
VGS=6ꢀV,ꢀID=25ꢀA  
RDS(on)  
mΩ  
Gate resistance1)  
Transconductance  
RG  
gfs  
-
1.3  
98  
2.0  
-
Ω
-
49  
S
|VDS|>2|ID|RDS(on)max,ꢀID=50ꢀA  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance1)  
Output capacitance1)  
Reverse transfer capacitance1)  
Ciss  
Coss  
Crss  
-
-
-
3500 4600 pF  
VGS=0ꢀV,ꢀVDS=40ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=40ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=40ꢀV,ꢀf=1ꢀMHz  
570  
30  
740  
52  
pF  
pF  
VDD=40ꢀV,ꢀVGS=10ꢀV,ꢀID=50ꢀA,  
RG,ext=3ꢀΩ  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
14  
10  
27  
10  
-
-
-
-
ns  
ns  
ns  
ns  
VDD=40ꢀV,ꢀVGS=10ꢀV,ꢀID=50ꢀA,  
RG,ext=3ꢀΩ  
VDD=40ꢀV,ꢀVGS=10ꢀV,ꢀID=50ꢀA,  
RG,ext=3ꢀΩ  
Turn-off delay time  
Fall time  
VDD=40ꢀV,ꢀVGS=10ꢀV,ꢀID=50ꢀA,  
RG,ext=3ꢀΩ  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ  
Values  
Typ.  
16  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate charge at threshold  
Gate to drain charge1)  
Switching charge  
Qgs  
-
-
-
-
-
-
-
-
-
nC  
nC  
nC  
nC  
nC  
V
VDD=40ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=40ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=40ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=40ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=40ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=40ꢀV,ꢀID=50ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ10ꢀV  
Qg(th)  
Qgd  
10  
-
13  
20  
-
Qsw  
19  
Gate charge total1)  
Qg  
53  
66  
-
Gate plateau voltage  
Gate charge total, sync. FET  
Output charge1)  
Vplateau  
Qg(sync)  
Qoss  
4.7  
44  
-
nC  
nC  
61  
81  
VDD=40ꢀV,ꢀVGS=0ꢀV  
1) Defined by design. Not subject to production test.  
2) See ″Gate charge waveforms″ for parameter definition  
Final Data Sheet  
4
Rev.ꢀ2.1,ꢀꢀ2022-10-06  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ80ꢀV  
BSC033N08NS5SC  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
-
Max.  
112  
576  
1.1  
82  
Diode continuous forward current  
Diode pulse current  
IS  
-
-
-
-
-
A
TC=25ꢀ°C  
IS,pulse  
VSD  
trr  
-
A
TC=25ꢀ°C  
Diode forward voltage  
0.83  
41  
36  
V
VGS=0ꢀV,ꢀIF=50ꢀA,ꢀTj=25ꢀ°C  
VR=40ꢀV,ꢀIF=50A,ꢀdiF/dt=100ꢀA/µs  
VR=40ꢀV,ꢀIF=50A,ꢀdiF/dt=100ꢀA/µs  
Reverse recovery time1)  
Reverse recovery charge1)  
ns  
nC  
Qrr  
72  
1) Defined by design. Not subject to production test.  
Final Data Sheet  
5
Rev.ꢀ2.1,ꢀꢀ2022-10-06  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ80ꢀV  
BSC033N08NS5SC  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀDrainꢀcurrent  
140  
150  
120  
100  
80  
60  
40  
20  
0
125  
100  
75  
50  
25  
0
0
25  
50  
75  
100  
125  
150  
175  
200  
0
25  
50  
75  
100  
125  
150  
175  
200  
TCꢀ[°C]  
TCꢀ[°C]  
Ptot=f(TC)  
ID=f(TC);ꢀVGS≥10ꢀV  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
103  
101  
1 µs  
102  
101  
10 µs  
100  
100 µs  
1 ms  
0.5  
0.2  
10 ms  
DC  
0.1  
10-1  
0.05  
100  
0.02  
0.01  
10-2  
single pulse  
10-1  
10-2  
10-3  
10-1  
100  
101  
102  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
6
Rev.ꢀ2.1,ꢀꢀ2022-10-06  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ80ꢀV  
BSC033N08NS5SC  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
600  
8 V  
9 V  
10  
500  
10V  
8
7 V  
400  
5.5V  
6 V  
6
300  
6 V  
7 V  
8 V  
4
2
0
200  
9 V  
10V  
5.5V  
100  
0
0
1
2
3
4
5
0
50  
100  
150  
200  
250  
300  
VDSꢀ[V]  
IDꢀ[A]  
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance  
500  
175  
150  
125  
100  
75  
400  
300  
200  
50  
100  
25  
175 °C  
25 °C  
0
0
0
1
2
3
4
5
6
7
0
25  
50  
75  
100  
125  
150  
VGSꢀ[V]  
IDꢀ[A]  
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj  
gfs=f(ID),ꢀVDS=3ꢀV,ꢀTj=25ꢀ°C  
Final Data Sheet  
7
Rev.ꢀ2.1,ꢀꢀ2022-10-06  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ80ꢀV  
BSC033N08NS5SC  
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance  
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage  
2.4  
4.0  
3.5  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
760 µA  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
76 µA  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
Tjꢀ[°C]  
Tjꢀ[°C]  
RDS(on)=f(Tj),ꢀID=50ꢀA,ꢀVGS=10ꢀV  
VGS(th)=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID  
Diagramꢀ11:ꢀTyp.ꢀcapacitances  
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
104  
103  
25 °C  
25 °C, max  
175 °C  
175 °C, max  
Ciss  
103  
102  
101  
102  
101  
100  
Coss  
Crss  
0
10  
20  
30  
40  
50  
60  
70  
80  
0.00  
0.25  
0.50  
0.75  
1.00  
1.25  
1.50  
VDSꢀ[V]  
VSDꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
IF=f(VSD);ꢀparameter:ꢀTj  
Final Data Sheet  
8
Rev.ꢀ2.1,ꢀꢀ2022-10-06  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ80ꢀV  
BSC033N08NS5SC  
Diagramꢀ13:ꢀAvalancheꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
102  
10  
8
6
4
2
0
25 °C  
40 V  
100 °C  
16 V  
101  
64 V  
150 °C  
100  
10-1  
100  
101  
102  
103  
0
10  
20  
30  
40  
50  
60  
tAVꢀ[µs]  
Qgateꢀ[nC]  
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start  
VGS=f(Qgate),ꢀID=50ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagram Gate charge waveforms  
88  
86  
84  
82  
80  
78  
76  
-75 -50 -25  
0
25 50 75 100 125 150 175 200  
Tjꢀ[°C]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
Final Data Sheet  
9
Rev.ꢀ2.1,ꢀꢀ2022-10-06  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ80ꢀV  
BSC033N08NS5SC  
5ꢀꢀꢀꢀꢀPackageꢀOutlines  
DOCUMENT NO.  
Z8B00184589  
MILLIMETERS  
DIMENSION  
REVISION  
03  
MIN.  
MAX.  
0.75  
0.05  
0.45  
A
A1  
b
-
-
SCALE 10:1  
0.35  
c
0.203  
3.03  
2mm  
0
1
D
4.95  
4.11  
5.05  
4.31  
D1  
D2  
E
EUROPEAN PROJECTION  
5.95  
3.66  
6.05  
3.86  
E1  
E2  
e
4.11  
1.27  
L1  
L2  
aaa  
ddd  
0.675  
0.625  
0.775  
0.825  
ISSUE DATE  
03.06.2019  
0.05  
0.10  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-WSON-8,ꢀdimensionsꢀinꢀmm  
Final Data Sheet  
10  
Rev.ꢀ2.1,ꢀꢀ2022-10-06  
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ80ꢀV  
BSC033N08NS5SC  
RevisionꢀHistory  
BSC033N08NS5SC  
Revision:ꢀ2022-10-06,ꢀRev.ꢀ2.1  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
2.0  
2.1  
Release of final version  
Update "Features"  
2022-09-17  
2022-10-06  
Trademarks  
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Final Data Sheet  
11  
Rev.ꢀ2.1,ꢀꢀ2022-10-06  

相关型号：

BSC034N03LSG

 OptiMOS™3 Power-MOSFET
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BSC034N03LSGATMA1

 Power Field-Effect Transistor, 22A I(D), 30V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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BSC034N03LSGXT

 Power Field-Effect Transistor, 22A I(D), 30V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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BSC034N06NS

 OptiMOS ™ 5 60V 针对交换模式电源 (SMPS)中的同步整流进行了优化，例如服务器和台式机以及平板电脑充电器中的电源。此外，这些器件是电机控制、太阳能微逆变器和快速开关 直流-直流转换器等广泛工业应用的绝佳选择。
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BSC034N10LS5

 逻辑电平 OptiMOS™ 5 100V 功率 MOSFET提供低栅极电荷，可在不影响导通损耗的情况下减少开关损耗。采用 SuperS08 封装的 OptiMOS™ 5（BSC034N10LS5）功率 MOSFET 可在高开关频率下运作，并且其栅极阈值电压低，因此 MOSFET 可直接由微控制器驱动。它可用于 充电器、 适配器 和 电信等应用
INFINEON

BSC035N04LS G

 OptiMOS™ 40V 是交换模式电源 (SMPS)中的同步整流的理想之选，例如服务器和台式机。此外，这些器件可用于电机控制变器和快速开关直流-直流转换器等广泛工业应用。
INFINEON

BSC035N04LSG

 OptiMOS3 Power-Transistor
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BSC035N04LSGATMA1

 Power Field-Effect Transistor, 21A I(D), 40V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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BSC035N10NS5

 Infineon’s OptiMOS™ 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter.
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BSC035N10NS5ATMA1

 Power Field-Effect Transistor, 100A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8
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BSC036NE7NS3 G

 75V OptiMOS™技术专注于同步整流应用。基于领先的80V技术，这些75V产品同时具有极低的导通电阻和出色的开关性能。
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BSC037N025S

 OptiMOS㈢2 Power-Transistor
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