BSC070N10NS5 [INFINEON]
Infineon’s OptiMOS™ 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter.;型号: | BSC070N10NS5 |
厂家: | Infineon |
描述: | Infineon’s OptiMOS™ 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter. 开关 脉冲 光电二极管 晶体管 |
文件: | 总13页 (文件大小:1316K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BSC070N10NS5
MOSFET
OptiMOSTM5ꢀPower-Transistor,ꢀ100ꢀV
SuperSO8
5
8
6
7
7
Features
6
5
8
•ꢀOptimizedꢀforꢀhighꢀperformanceꢀSMPS,ꢀe.g.ꢀsync.ꢀrec.
•ꢀ100%ꢀavalancheꢀtested
•ꢀSuperiorꢀthermalꢀresistance
•ꢀN-channel
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC1)ꢀꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
4
3
1
2
2
3
1
4
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
S 1
8 D
7 D
Parameter
Value
100
7.0
80
Unit
S 2
S 3
G 4
VDS
V
RDS(on),max
ID
mΩ
A
6 D
5 D
Qoss
41
nC
nC
QG(0V..10V)
30
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
BSC070N10NS5
PG-TDSON-8
070N10N5
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.ꢀ2.3,ꢀꢀ2019-11-13
OptiMOSTM5ꢀPower-Transistor,ꢀ100ꢀV
BSC070N10NS5
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.ꢀ2.3,ꢀꢀ2019-11-13
OptiMOSTM5ꢀPower-Transistor,ꢀ100ꢀV
BSC070N10NS5
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
-
-
80
51
14
VGS=10ꢀV,ꢀTC=25ꢀ°C
Continuous drain current
ID
A
VGS=10ꢀV,ꢀTC=100ꢀ°C
VGS=10ꢀV,ꢀTA=25ꢀ°C,ꢀRthJAꢀ=50K/W1)
Pulsed drain current2)
Avalanche energy, single pulse3)
ID,pulse
EAS
-
-
-
-
320
73
A
TC=25ꢀ°C
-
mJ
V
ID=50ꢀA,ꢀRGS=25ꢀΩ
Gate source voltage
VGS
-20
20
-
-
-
-
-
83
2.5
TC=25ꢀ°C
Power dissipation
Ptot
W
TA=25ꢀ°C,ꢀRthJA=50ꢀK/W2)
IEC climatic category;
DIN IEC 68-1: 55/150/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
150
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case,
bottom
RthJC
RthJC
RthJA
-
0.9
1.5
K/W
K/W
K/W
-
-
-
Thermal resistance, junction - case,
top
-
-
-
-
20
50
Device on PCB,
6 cm2 cooling area1)
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2) See Diagram 3 for more detailed information
3) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.3,ꢀꢀ2019-11-13
OptiMOSTM5ꢀPower-Transistor,ꢀ100ꢀV
BSC070N10NS5
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
100
2.2
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
VDS=VGS,ꢀID=50ꢀµA
3.0
3.8
-
-
0.1
10
1
100
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=100ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
10
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
6.0
7.6
7.0
10.2
VGS=10ꢀV,ꢀID=40ꢀA
VGS=6ꢀV,ꢀID=20ꢀA
RDS(on)
mΩ
Gate resistance1)
Transconductance
RG
gfs
-
1.0
77
1.5
-
Ω
-
38
S
|VDS|>2|ID|RDS(on)max,ꢀID=40ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance1)
Output capacitance1)
Reverse transfer capacitance1)
Ciss
Coss
Crss
-
-
-
2100 2700 pF
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=50ꢀV,ꢀf=1ꢀMHz
340
16
440
28
pF
pF
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=40ꢀA,
RG,ext=3ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
13
5
-
-
-
-
ns
ns
ns
ns
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=40ꢀA,
RG,ext=3ꢀΩ
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=40ꢀA,
RG,ext=3ꢀΩ
Turn-off delay time
Fall time
24
6
VDD=50ꢀV,ꢀVGS=10ꢀV,ꢀID=40ꢀA,
RG,ext=3ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
10
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge1)
Switching charge
Qgs
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=50ꢀV,ꢀID=40ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=40ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=40ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=40ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=40ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=50ꢀV,ꢀID=40ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ10ꢀV
Qg(th)
Qgd
6
-
6
10
-
Qsw
11
Gate charge total1)
Qg
30
38
-
Gate plateau voltage
Gate charge total, sync. FET
Output charge1)
Vplateau
Qg(sync)
Qoss
4.8
26
-
nC
nC
41
55
VDD=50ꢀV,ꢀVGS=0ꢀV
1) Defined by design. Not Subject to production test.
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.3,ꢀꢀ2019-11-13
OptiMOSTM5ꢀPower-Transistor,ꢀ100ꢀV
BSC070N10NS5
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
-
Max.
76
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
320
1.1
A
TC=25ꢀ°C
Diode forward voltage
0.9
53
89
V
VGS=0ꢀV,ꢀIF=40ꢀA,ꢀTj=25ꢀ°C
VR=50ꢀV,ꢀIF=40ꢀA,ꢀdiF/dt=100ꢀA/µs
VR=50ꢀV,ꢀIF=40ꢀA,ꢀdiF/dt=100ꢀA/µs
Reverse recovery time1)
Reverse recovery charge1)
106
179
ns
nC
Qrr
1) Defined by design. Not Subject to production test.
Final Data Sheet
5
Rev.ꢀ2.3,ꢀꢀ2019-11-13
OptiMOSTM5ꢀPower-Transistor,ꢀ100ꢀV
BSC070N10NS5
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
100
90
80
70
60
50
40
30
20
10
0
80
60
40
20
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
1 µs
10 µs
102
100
0.5
0.2
0.1
100 µs
101
10-1
1 ms
10 ms
0.05
0.02
0.01
DC
single pulse
100
10-2
10-1
10-3
10-1
100
101
102
103
10-6
10-5
10-4
10-3
10-2
10-1
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.3,ꢀꢀ2019-11-13
OptiMOSTM5ꢀPower-Transistor,ꢀ100ꢀV
BSC070N10NS5
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
320
14
5 V
280
12
10 V
240
5.5 V
10
7 V
6 V
200
7 V
8
6 V
160
10 V
6
4
2
0
120
5.5 V
80
5 V
40
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
40
80
120
160
200
240
280
320
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
320
120
280
240
200
160
120
80
80
40
0
40
150 °C
25 °C
0
0
2
4
6
8
0
20
40
60
80
100
VGSꢀ[V]
IDꢀ[A]
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
gfs=f(ID);ꢀTj=25ꢀ°C
Final Data Sheet
7
Rev.ꢀ2.3,ꢀꢀ2019-11-13
OptiMOSTM5ꢀPower-Transistor,ꢀ100ꢀV
BSC070N10NS5
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
14
5
12
10
4
max
500 µA
3
2
1
0
8
50 µA
typ
6
4
2
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj);ꢀID=40ꢀA;ꢀVGS=10ꢀV
VGS(th)=f(Tj);ꢀVGS=VDS
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
25 °C
150 °C
25 °C, max
150 °C, max
Ciss
103
102
101
100
Coss
102
Crss
101
0
20
40
60
80
100
0.0
0.5
1.0
1.5
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.3,ꢀꢀ2019-11-13
OptiMOSTM5ꢀPower-Transistor,ꢀ100ꢀV
BSC070N10NS5
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
10
9
8
7
50 V
25 °C
80 V
101
20 V
100 °C
6
5
4
3
2
1
0
125 °C
100
10-1
100
101
102
103
0
10
20
30
40
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)
VGS=f(Qgate);ꢀID=40ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
108
106
104
102
100
98
96
94
-60
-20
20
60
100
140
180
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.3,ꢀꢀ2019-11-13
OptiMOSTM5ꢀPower-Transistor,ꢀ100ꢀV
BSC070N10NS5
5ꢀꢀꢀꢀꢀPackageꢀOutlines
DOCUMENT NO.
Z8B00003332
REVISION
07
MILLIMETERS
DIMENSION
MIN.
0.90
0.15
0.34
4.80
3.90
0.03
5.70
5.90
3.88
MAX.
1.20
0.35
0.54
5.35
4.40
0.23
6.10
6.42
4.31
SCALE 10:1
A
A1
b
3mm
0
1
2
D
D1
D2
E
EUROPEAN PROJECTION
E1
E2
e
1.27
L
0.45
0.45
0.71
0.69
ISSUE DATE
06.06.2019
M
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TDSON-8,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.3,ꢀꢀ2019-11-13
OptiMOSTM5ꢀPower-Transistor,ꢀ100ꢀV
BSC070N10NS5
Dimension in mm
Figureꢀ2ꢀꢀꢀꢀꢀOutlineꢀTapeꢀ(TDSON-8)
Final Data Sheet
11
Rev.ꢀ2.3,ꢀꢀ2019-11-13
OptiMOSTM5ꢀPower-Transistor,ꢀ100ꢀV
BSC070N10NS5
PG-TDSON-8: Recommended Boardpads & Apertures
1.905
1.905
1.27
3x
0.6
1.27
3x
0.5
1.6
0.2
1.5
0.5
1.27
3x
1.27
3x
0.4
1.905
1.905
copper
solder mask
stencil apertures
all dimensions in mm
Figure 3 Outline Boardpads (TDSON-8), dimensions in mm
Final Data Sheet
12
Rev.ꢀ2.3,ꢀꢀ2019-11-13
OptiMOSTM5 Power-Transistor , 100 V
BSC070N10NS5
Revision History
BSC070N10NS5
Revision: 2019-11-13, Rev. 2.3
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
2.2
2.3
Release of final version
Update Marking
2014-11-26
2015-07-13
2016-09-07
2019-11-13
Update Avalanche Energy
Update package drawings
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
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Published by
Infineon Technologies AG
81726 München, Germany
© 2019 Infineon Technologies AG
All Rights Reserved.
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please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or
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failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and
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Final Data Sheet
13
Rev. 2.3, 2019-11-13
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INFINEON
BSC074N15NS5
Infineon's OptiMOS™ MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance.
INFINEON
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OptiMOS ™ 60V 是交换模式电源 (SMPS)中的同步整流的理想之选,例如服务器和台式机以及平板电脑充电器中的电源。此外,这些器件可用于电机控制、太阳能微逆变器和快速开关直流-直流转换器等广泛工业应用。
INFINEON
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