BSC0911ND [INFINEON]
英飞凌凭借 OptiMOS™ 25V 产品系列，为分立功率 MOSFET 和封装系统树立功率密度和能效新标准。极低的栅极和输出电荷，结合极低的导通状态电阻和小体积封装，使 OptiMOS™ 25V 成为要求较高的服务器、数据通信和通信电压调节器解决方案的最佳选择。可用于半桥配置（功率级 5x6）。;
| 型号： | BSC0911ND |
| 厂家： | 
Infineon |
| 描述： | 英飞凌凭借 OptiMOS™ 25V 产品系列，为分立功率 MOSFET 和封装系统树立功率密度和能效新标准。极低的栅极和输出电荷，结合极低的导通状态电阻和小体积封装，使 OptiMOS™ 25V 成为要求较高的服务器、数据通信和通信电压调节器解决方案的最佳选择。可用于半桥配置（功率级 5x6）。 通信 栅 数据通信 服务器 光电二极管 晶体管 栅极 调节器 |
| 文件： | 总14页 (文件大小：737K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSC0911ND
Q2
Dual N-Channel OptiMOS™ MOSFET
Product Summary
Features
Q1
25
• Dual N-channel OptiMOS™ MOSFET
25
1.2
1.7
40
V
VDS
• Optimized for high performance Buck converter
3.2
4.8
40
RDS(on),max
VGS=10 V
VGS=4.5 V
mW
• Logic level (4.5V rated)
• N-channel
A
ID
• Qualified according to JEDEC1) for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
VPhase
Type
Package
Marking
0911ND
BSC0911ND
PG-TISON-8
Maximum ratings, at T j=25 °C, unless otherwise specified 2)
Value
Parameter
Symbol Conditions
Unit
Q1
Q2
I D
T C=70 °C, VGS=10 V
T A=25 °C, VGS=4.5 V3)
T A=70 °C, VGS=4.5 V3)
Continuous drain current
40
40
A
18
14
30
24
T A=25 °C, VGS=4.5 V4
14
22
Pulsed drain current5)
I D,pulse
T C=70 °C
160
160
Q1: I D=20 A,
Q2: I D=20 A,
R GS=25 W
EAS
Avalanche energy, single pulse
20
160
mJ
VGS
Ptot
±20
Gate source voltage
Power dissipation
V
T A=25 °C2)
2.5
1.0
2.5
1.0
W
T A=25 °C, minimum
footprint3)
T j, T stg
-55 ... 150
55/150/56
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
°C
1) J-STD20 and JESD22
2) One transistor active
Rev.2.0
page 1
2013-07-30
BSC0911ND
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Q1
Q2
Q1
Q2
Q1
Q2
-
-
-
-
3.4
1.5
K/W
Thermal resistance, junction -
case
R thJA
Thermal resistance, junction -
ambient1)
6 cm2 cooling area3)
-
-
-
-
50
minimal footprint,
steady state4)
125
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage Q1
V(BR)DSS VGS=0 V, I D=1 mA
25
-
1.6
-
V
Q2
Gate threshold voltage
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
VGS(th) VDS=VGS, I D=250 µA
1.2
2
1
I DSS
Zero gate voltage drain current
VDS=25 V, VGS=0 V,
-
-
-
µA
T j=25 °C
VDS=25 V, VGS=0 V,
T j=150 °C
-
100
I GSS
Gate-source leakage current
VGS=20 V, VDS=0 V
-
100 nA
R DS(on)
-
-
3.7
1.3
2.5
0.9
0.9
0.6
77
4.8
1.7
3.2
1.2
1.8
1.2
-
mW
Drain-source on-state
resistance
VGS=4.5 V, I D=20 A
-
VGS=10 V, I D=20 A
-
R G
Gate resistance
0.5
0.3
38
65
W
g fs
Transconductance
S
|VDS|>2|I D|R DS(on)max
,
I D=20 A
130
-
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is
vertical in still air.
4) Device mounted on a minimum pad (one layer, 70 µm thick). One transistor active
Rev.2.0
page 2
2013-07-30
BSC0911ND
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
C iss
Input capacitance
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
1200
3800
470
1400
51
1600 pF
5100
C oss
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
625
VGS=0 V,
VDS= 12 V, f =1 MHz
1862
Crss
t d(on)
t r
-
150
3.3
-
ns
3.8
-
2.8
-
VDD=12 V,
VGS=10 V, R G=1.6 W,
I D=20 A
5.4
-
t d(off)
Turn-off delay time
Fall time
15
-
25
-
t f
2.2
-
4.0
-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
Q1
Q2
-
-
-
-
-
-
3.0
1.8
7.7
2.6
8.8
5.5
25
3.9
2.7
12
-
nC
Q gd
Q g
VDD=12 V,
I D=20 A,
VGS=0 to 4.5 V
Vplateau
Q gs
Gate plateau voltage
Gate to source charge
Gate to drain charge
Gate charge total
V
12
8.3
37
nC
Q gd
Q g
Vplateau
Q oss
Gate plateau voltage
Output charge
2.3
9
V
Q1
Q2
-
-
12
37
nC
VDD=12 V, VGS=0 V
28
5) See figure 3 for more detailed information.
Rev.2.0
page 3
2013-07-30
BSC0911ND
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Reverse Diode
Diode continuous forward current
I S
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
-
-
37
A
40
T C=25 °C
I S,pulse
Diode pulse current
-
-
-
-
-
-
-
160
-
160
VSD
Diode forward voltage
Reverse recovery charge
0.84
0.79
10
-
-
-
-
V
VGS=0 V, I F=20 A,
T j=25 °C
Q rr
nC
nC
VR=15 V, I F=I S,
diF/dt =100 A/µs
20
Rev.2.0
page 4
2013-07-30
BSC0911ND
1 Power dissipation (Q1)
2 Power dissipation (Q2)
Ptot=f(T A)4)
Ptot=f(T A)4)
1.2
1
1.2
1
0.8
0.6
0.4
0.2
0
0.8
0.6
0.4
0.2
0
0
40
80
120
160
0
40
80
120
160
TA [°C]
TA [°C]
3 Drain current (Q1)
I D=f(T C)
4 Drain current (Q2)
I D=f(T C)
parameter: VGS≥10 V
parameter: VGS≥10 V
50
40
30
20
10
0
50
40
30
20
10
0
0
40
80
120
160
0
40
80
120
160
TC [°C]
TC [°C]
Rev.2.0
page 5
2013-07-30
BSC0911ND
5 Safe operating area (Q1)
I D=f(VDS); T C=25 °C; D =0
parameter: t p
6 Safe operating area (Q2)
I D=f(VDS); T C=25 °C; D =0
parameter: t p
103
103
1 µs
1 µs
10 µs
102
102
10 µs
100 µs
100 µs
1 ms
1 ms
10 ms
DC
10 ms
101
101
DC
100
100
10-1
10-1
10-1
100
101
102
10-1
100
101
102
VDS [V]
VDS [V]
7 Max. transient thermal impedance (Q1)
Z thJC=f(t p)
8 Max. transient thermal impedance (Q2)
Z thJC=f(t p)
parameter: D =t p/T
parameter: D =t p/T
101
101
100
0.5
0.5
0.2
100
0.2
0.1
0.05
0.1
10-1
0.02
0.05
0.01
0.02
single pulse
0.01
single pulse
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
10-5
10-4
10-3
10-2
10-1
100
tp [s]
tp [s]
Rev.2.0
page 6
2013-07-30
BSC0911ND
9 Typ. output characteristics (Q1)
I D=f(VDS); T j=25 °C
10 Typ. output characteristics (Q2)
I D=f(VDS); T j=25 °C
parameter: VGS
parameter: VGS
160
400
4.5 V
10 V
10 V
4 V
4 V
3.5 V
4.5 V
3.5 V
3.3 V
120
80
40
0
300
3.3 V
200
100
0
3 V
3 V
2.8 V
2.8 V
0
1
2
3
0
1
2
3
VDS [V]
VDS [V]
11 Typ. drain-source on resistance (Q1)
R DS(on)=f(I D); T j=25 °C
12 Typ. drain-source on resistance (Q2)
R DS(on)=f(I D); T j=25 °C
parameter: VGS
parameter: VGS
10
2
3.3 V
3.5 V
4 V
8
1.5
3 V
3.3 V
4.5 V
5 V
6
4
2
0
3.5 V
4 V
1
10 V
4.5 V
5 V
10 V
0.5
0
0
20
40
60
80
0
20
40
60
80
ID [A]
ID [A]
Rev.2.0
page 7
2013-07-30
BSC0911ND
13 Typ. transfer characteristics (Q1)
I D=f(VGS); |VDS |>2 | I D| R DS(on)max
parameter: T j
14 Typ. transfer characteristics (Q2)
I D=f(VGS); |VDS |>2 | I D| R DS(on)max
parameter: T j
160
120
80
160
120
80
40
40
150 °C
25 °C
150 °C
25 °C
0
0
0
1
2
3
4
0
1
2
3
4
VGS [V]
VGS [V]
15 Drain-source on-state resistance (Q1)
16 Drain-source on-state resistance (Q2)
R DS(on)=f(T j); I D=20 A; VGS=10 V
R DS(on)=f(T j); I D=20 A; VGS=10 V
5
4
2
1.5
3
typ
typ
1
2
1
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tj [°C]
Tj [°C]
Rev.2.0
page 8
2013-07-30
BSC0911ND
17 Typ. gate threshold voltage (Q1)
18 Typ. gate threshold voltage (Q2)
VGS(th)=f(T j); VGS=VDS; I D=250 µA
VGS(th)=f(T j); VGS=VDS; I D=250 µA
2.8
2.4
2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
1.6
1.2
0.8
0.4
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tj [°C]
Tj [°C]
19 Typ. capacitances (Q1)
20 Typ. capacitances (Q2)
C =f(VDS); VGS=0 V; f =1 MHz
C =f(VDS); VGS=0 V; f =1 MHz
104
103
102
101
104
Ciss
Ciss
Coss
103
Coss
Crss
102
Crss
101
0
5
10
15
20
25
0
5
10
15
20
25
VDS [V]
VDS [V]
Rev.2.0
page 9
2013-07-30
BSC0911ND
21 Forward characteristics of reverse diode (Q1) 22 Forward characteristics of reverse diode (Q2)
I F=f(VSD
)
I F=f(VSD)
parameter: T j
parameter: T j
103
103
102
101
100
10-1
102
101
100
10-1
25 °C
150 °C
25 °C
150 °C
10-2
0
10-2
0
0.4
0.8
1.2
0.4
0.8
1.2
VSD [V]
VSD [V]
23 Avalanche characteristics (Q1)
24 Avalanche characteristics (Q2)
I AS=f(t AV); R GS=25 W
parameter: T j(start)
I AS=f(t AV); R GS=25 W
parameter: T j(start)
102
102
25 °C
125 °C
100 °C
25 °C
101
101
100 °C
125 °C
100
100
100
101
102
103
100
101
102
103
tAV [µs]
tAV [µs]
Rev.2.0
page 10
2013-07-30
BSC0911ND
25 Typ. gate charge (Q1)
VGS=f(Q gate); I D=20 A pulsed
parameter: VDD
26 Typ. gate charge (Q2)
VGS=f(Q gate); I D=20 A pulsed
parameter: VDD
10
10
8
8
12 V
20 V
5 V
12 V
20 V
6
6
5 V
4
2
0
4
2
0
0
4
8
12
16
20
0
10
20
30
Qgate [nC]
40
50
60
Qgate [nC]
27 Drain-source breakdown voltage (Q1)
28 Drain-source breakdown voltage (Q2)
VBR(DSS)=f(T j); I D=1 mA
VBR(DSS)=f(T j); I D=1 mA
28
27
26
25
24
23
22
21
20
28
27
26
25
24
23
22
21
20
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tj [°C]
Tj [°C]
Rev.2.0
page 11
2013-07-30
BSC0911ND
Package Outline
PG-TISON
Rev.2.0
page 12
2013-07-30
BSC0911ND
Boardpads & Apertures
PG-TISON
Rev.2.0
page 13
2013-07-30
BSC0911ND
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev.2.0
page 14
2013-07-30
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