BSC093N15NS5SC [INFINEON]
OptiMOS™ 5 power MOSFETs 150 V in SuperSO8 DSC (dual-side cooling) package offer all thermal management benefits of dual-side cooling solutions with industry-standard footprint.;
| 型号： | BSC093N15NS5SC |
| 厂家： | 
Infineon |
| 描述： | OptiMOS™ 5 power MOSFETs 150 V in SuperSO8 DSC (dual-side cooling) package offer all thermal management benefits of dual-side cooling solutions with industry-standard footprint. |
| 文件： | 总11页 (文件大小：1065K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSC093N15NS5SC
MOSFET
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ150ꢀV
PG-WSON-8
Features
•ꢀDual-sideꢀcooledꢀpackageꢀwithꢀlowestꢀjunction-topꢀthermalꢀresistance
•ꢀN-channel,ꢀnormalꢀlevel
tab
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)
•ꢀVeryꢀlowꢀreverseꢀrecoveryꢀchargeꢀ(Qrr)
•ꢀ175ꢀ°Cꢀoperatingꢀtemperature
5
6
7
8
4
3
2
1
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀIdealꢀforꢀhigh-frequencyꢀswitchingꢀandꢀsynchronousꢀrectification
Productꢀvalidation
Drain
Pin 5-8
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
Gate
Pin 4
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
150
9.3
Unit
Source
Pin 1-3, tab
VDS
V
RDS(on),max
mΩ
A
ID
89
Qrr
58
nC
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
BSC093N15NS5SC
PG-WSON-8
093N15SC
-
Final Data Sheet
1
Rev.ꢀ2.1,ꢀꢀ2022-10-07
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ150ꢀV
BSC093N15NS5SC
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2022-10-07
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ150ꢀV
BSC093N15NS5SC
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
89
63
TC=25ꢀ°C
A
Continuous drain current1)
ID
TC=100ꢀ°C
Pulsed drain current2)
Avalanche energy, single pulse3)
Gate source voltage
ID,pulse
EAS
-
-
-
-
-
356
130
20
A
TC=25ꢀ°C
-
mJ
V
ID=50ꢀA,ꢀRGS=25ꢀΩ
VGS
Ptot
-20
-
-
Power dissipation
167
W
TC=25ꢀ°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
175
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case,
bottom
RthJC
RthJC
RthJA
-
0.54
0.36
-
0.9
K/W
K/W
K/W
-
-
-
Thermal resistance, junction - case,
top
-
-
0.72
50
Thermal resistance, junction - ambient,
6 cm2 cooling area4)
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2) See Diagram 3 for more detailed information
3) See Diagram 13 for more detailed information
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2022-10-07
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ150ꢀV
BSC093N15NS5SC
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
150
3.0
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
3.8
4.6
VDS=VGS,ꢀID=107ꢀµA
-
-
0.1
10
1
100
VDS=120ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=120ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
1
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
7.6
8.4
9.3
10.1
VGS=10ꢀV,ꢀID=44ꢀA,
VGS=8ꢀV,ꢀID=22ꢀA
RDS(on)
mΩ
Gate resistance1)
Transconductance
RG
gfs
-
0.9
67
1.4
-
Ω
-
34
S
|VDS|>2|ID|RDS(on)max,ꢀID=44ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance1)
Output capacitance1)
Reverse transfer capacitance1)
Ciss
Coss
Crss
-
-
-
2430 3230 pF
VGS=0ꢀV,ꢀVDS=75ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=75ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=75ꢀV,ꢀf=1ꢀMHz
604
15
803
26
pF
pF
VDD=75ꢀV,ꢀVGS=10ꢀV,ꢀID=44ꢀA,
RG,ext=3ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
14
-
-
-
-
ns
ns
ns
ns
VDD=75ꢀV,ꢀVGS=10ꢀV,ꢀID=44ꢀA,
RG,ext=3ꢀΩ
4.3
14.4
3.8
VDD=75ꢀV,ꢀVGS=10ꢀV,ꢀID=44ꢀA,
RG,ext=3ꢀΩ
Turn-off delay time
Fall time
VDD=75ꢀV,ꢀVGS=10ꢀV,ꢀID=44ꢀA,
RG,ext=3ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
14
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
Gate to source charge
Gate to drain charge1)
Switching charge
Gate charge total1)
Gate plateau voltage
Output charge1)
Qgs
-
-
-
-
-
-
nC
nC
nC
nC
V
VDD=75ꢀV,ꢀID=44ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=75ꢀV,ꢀID=44ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=75ꢀV,ꢀID=44ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=75ꢀV,ꢀID=44ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=75ꢀV,ꢀID=44ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=75ꢀV,ꢀVGS=0ꢀV
Qgd
6.8
10.2
-
Qsw
Qg
13.4
33
40.7
-
Vplateau
Qoss
5.7
91
121
nC
1) Defined by design. Not subject to production test
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2022-10-07
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ150ꢀV
BSC093N15NS5SC
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
-
Max.
89
Diode continous forward current
Diode pulse current
IS
-
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
trr
-
356
1.2
98
A
TC=25ꢀ°C
Diode forward voltage
0.88
49
58
V
VGS=0ꢀV,ꢀIF=44ꢀA,ꢀTj=25ꢀ°C
VR=75ꢀV,ꢀIF=44,ꢀdiF/dt=100ꢀA/µs
VR=75ꢀV,ꢀIF=44,ꢀdiF/dt=100ꢀA/µs
Reverse recovery time1)
Reverse recovery charge1)
ns
nC
Qrr
116
1) Defined by design. Not subject to production test
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2022-10-07
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ150ꢀV
BSC093N15NS5SC
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
175
100
150
125
100
75
80
60
40
20
0
50
25
0
0
25
50
75
100
125
150
175
200
0
25
50
75
100
125
150
175
200
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
1 µs
102
101
100
0.5
0.2
10 µs
100 µs
10-1
0.1
1 ms
0.05
0.02
100
10 ms
0.01
10-2
DC
10-1
single pulse
10-2
10-3
100
101
102
103
10-6
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2022-10-07
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ150ꢀV
BSC093N15NS5SC
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
400
24
350
20
10 V
5.5 V
300
8 V
6 V
16
6.5 V
250
200
7 V
12
8 V
7 V
150
8
4
0
10 V
100
6 V
50
5.5 V
5 V
0
0
1
2
3
4
5
6
7
0
25
50
75
100
125
150
175
200
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
400
140
350
300
120
100
80
60
40
20
0
25 °C
250
200
150
100
50
175 °C
0
0
2
4
6
8
10
0
20
40
60
80
100
120
140
160
VGSꢀ[V]
IDꢀ[A]
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
gfs=f(ID),ꢀVDS=5ꢀV,ꢀTj=25ꢀ°C
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2022-10-07
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ150ꢀV
BSC093N15NS5SC
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.4
5
2.0
1.6
1.2
0.8
0.4
0.0
1070 µA
4
107 µA
3
2
1
0
-75 -50 -25
0
25 50 75 100 125 150 175 200
-75 -50 -25
0
25 50 75 100 125 150 175 200
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj),ꢀID=44ꢀA,ꢀVGS=10ꢀV
VGS(th)=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
104
103
25 °C
25 °C, max
175 °C
Ciss
175 °C, max
Coss
103
102
101
100
102
101
100
Crss
0
25
50
75
100
125
150
0.00
0.25
0.50
0.75
1.00
1.25
1.50
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2022-10-07
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ150ꢀV
BSC093N15NS5SC
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
10
75 V
8
6
4
2
0
25 °C
30 V
101
120 V
100 °C
150 °C
100
10-1
10-1
100
101
102
103
0
5
10
15
20
25
30
35
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start
VGS=f(Qgate),ꢀID=44ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
160
158
156
154
152
150
148
146
144
-75 -50 -25
0
25 50 75 100 125 150 175 200
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2022-10-07
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ150ꢀV
BSC093N15NS5SC
5ꢀꢀꢀꢀꢀPackageꢀOutlines
DOCUMENT NO.
Z8B00184589
MILLIMETERS
DIMENSION
REVISION
03
MIN.
MAX.
0.75
0.05
0.45
A
A1
b
-
-
SCALE 10:1
0.35
c
0.203
3.03
2mm
0
1
D
4.95
4.11
5.05
4.31
D1
D2
E
EUROPEAN PROJECTION
5.95
3.66
6.05
3.86
E1
E2
e
4.11
1.27
L1
L2
aaa
ddd
0.675
0.625
0.775
0.825
ISSUE DATE
03.06.2019
0.05
0.10
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-WSON-8,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2022-10-07
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ150ꢀV
BSC093N15NS5SC
RevisionꢀHistory
BSC093N15NS5SC
Revision:ꢀ2022-10-07,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
Release of final version
Update "Features"
2022-08-29
2022-10-07
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Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2022-10-07
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BSC094N03SGAUMA1
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