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BSC13DN30NSFD [INFINEON]

200V、250V 和 300V 的 OptiMOS™ 快速二极管（FD）针对体二极管硬换向进行了优化。这些器件是电信、工业电源、 D 类音频放大器、电机控制和 DC-AC 逆变器等硬开关应用的理想选择。;
BSC13DN30NSFD
型号： BSC13DN30NSFD
厂家： Infineon    Infineon
描述：

200V、250V 和 300V 的 OptiMOS™ 快速二极管（FD）针对体二极管硬换向进行了优化。这些器件是电信、工业电源、 D 类音频放大器、电机控制和 DC-AC 逆变器等硬开关应用的理想选择。

开关 放大器 电机 电信 音频放大器 二极管
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BSC13DN30NSFD  
MOSFET  
OptiMOSTM3ꢀPower-Transistor,ꢀ300ꢀV  
PG-TDSON-8  
8
5
7
6
Features  
•ꢀN-channel,ꢀnormalꢀlevel  
•ꢀ175ꢀ°Cꢀrated  
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)  
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)  
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant  
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC1)ꢀꢀforꢀtargetꢀapplication  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
•ꢀIdealꢀforꢀhigh-frequencyꢀswitchingꢀandꢀsynchronousꢀrectification  
6
7
5
4
8
Pin 1  
2
3
3
2
4
1
Drain  
Pin 5-8  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
Value  
300  
130  
16  
Unit  
*1  
VDS  
V
Gate  
Pin 4  
RDS(on),max  
ID  
mΩ  
A
Source  
Pin 1-3  
*1: Internal body diode  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
BSC13DN30NSFD  
PG-TDSON-8  
13DN30NF  
-
1) J-STD20 and JESD22  
Final Data Sheet  
1
Rev.ꢀ2.2,ꢀꢀ2022-11-09  
OptiMOSTM3ꢀPower-Transistor,ꢀ300ꢀV  
BSC13DN30NSFD  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Final Data Sheet  
2
Rev.ꢀ2.2,ꢀꢀ2022-11-09  
OptiMOSTM3ꢀPower-Transistor,ꢀ300ꢀV  
BSC13DN30NSFD  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
16  
14  
TC=25ꢀ°C  
A
Continuous drain current  
ID  
TC=100ꢀ°C  
Pulsed drain current1)  
ID,pulse  
EAS  
-
-
-
-
64  
56  
A
TC=25ꢀ°C  
Avalanche energy, single pulse  
mJ  
ID=14.4ꢀA,ꢀRGS=25ꢀΩ  
ID=36ꢀA,ꢀVDS=150ꢀV,  
di/dt=1000ꢀA/µs,ꢀTj,max=175ꢀ°C  
Reverseꢀdiodeꢀpeakꢀdv/dt  
dv/dt  
-
-
60  
kV/µs  
Gate source voltage  
VGS  
-20  
-
-
-
-
20  
V
-
Power dissipation  
Ptot  
150  
175  
W
°C  
TC=25ꢀ°C  
Operating and storage temperature  
Tj,ꢀTstg  
-55  
-
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
0.6  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - case  
RthJC  
RthJA  
-
1
K/W  
K/W  
-
-
Thermal resistance, junction - ambient,  
minimal footprint  
-
-
-
-
75  
50  
Thermal resistance, junction - ambient,  
6 cm2 cooling area2)  
RthJA  
K/W  
-
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
300  
2
Typ.  
Max.  
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
VGS(th)  
-
-
V
V
VGS=0ꢀV,ꢀID=1ꢀmA  
VDS=VGS,ꢀID=90ꢀµA  
3
4
-
-
0.1  
10  
1
100  
VDS=240ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=240ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C  
Zero gate voltage drain current  
IDSS  
µA  
nA  
Gate-source leakage current  
Drain-source on-state resistance  
Gate resistance  
IGSS  
RDS(on)  
RG  
-
1
100  
130  
5
VGS=20ꢀV,ꢀVDS=0ꢀV  
-
114  
3.3  
38  
mΩ VGS=10ꢀV,ꢀID=16ꢀA  
-
Ω
-
Transconductance  
gfs  
19  
-
S
|VDS|>2|ID|RDS(on)max,ꢀID=16ꢀA  
1) See Diagram 3  
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.  
PCB is vertical in still air.  
Final Data Sheet  
3
Rev.ꢀ2.2,ꢀꢀ2022-11-09  
OptiMOSTM3ꢀPower-Transistor,ꢀ300ꢀV  
BSC13DN30NSFD  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Output capacitance1)  
Ciss  
Coss  
Crss  
-
-
-
1840 2450 pF  
VGS=0ꢀV,ꢀVDS=150ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=150ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=150ꢀV,ꢀf=1ꢀMHz  
76  
102  
-
pF  
pF  
Reverse transfer capacitance  
5.4  
VDD=150ꢀV,ꢀVGS=10ꢀV,ꢀID=8ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
8.0  
4.0  
19  
-
-
-
-
ns  
ns  
ns  
ns  
VDD=150ꢀV,ꢀVGS=10ꢀV,ꢀID=8ꢀA,  
RG,ext=1.6ꢀΩ  
VDD=150ꢀV,ꢀVGS=10ꢀV,ꢀID=8ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-off delay time  
Fall time  
VDD=150ꢀV,ꢀVGS=10ꢀV,ꢀID=8ꢀA,  
RG,ext=1.6ꢀΩ  
4.0  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ  
Values  
Typ.  
8.0  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Gate to source charge  
Gate to drain charge  
Switching charge  
Gate charge total1)  
Gate plateau voltage  
Output charge  
Qgs  
-
-
-
-
-
-
-
nC  
nC  
nC  
nC  
V
VDD=150ꢀV,ꢀID=16ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=150ꢀV,ꢀID=16ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=150ꢀV,ꢀID=16ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=150ꢀV,ꢀID=16ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=150ꢀV,ꢀID=16ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=150ꢀV,ꢀVGS=0ꢀV  
Qgd  
2.9  
-
Qsw  
Qg  
5.4  
-
23  
30  
-
Vplateau  
Qoss  
4.4  
48  
-
nC  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
-
Max.  
16  
Diode continous forward current  
Diode pulse current3)  
Diode hard commutation current4)  
IS  
-
-
-
-
-
-
A
TC=25ꢀ°C  
IS,pulse  
IS,hard  
VSD  
trr  
-
64  
A
TC=25ꢀ°C  
-
16  
A
TC=25ꢀ°C,ꢀdiF/dt=1000ꢀA/µs  
VGS=0ꢀV,ꢀIF=16ꢀA,ꢀTj=25ꢀ°C  
VR=150ꢀV,ꢀIF=12.6A,ꢀdiF/dt=100ꢀA/µs  
VR=150ꢀV,ꢀIF=12.6A,ꢀdiF/dt=100ꢀA/µs  
Diode forward voltage  
Reverse recovery time1)  
Reverse recovery charge1)  
0.9  
111  
249  
1.2  
222  
498  
V
ns  
nC  
Qrr  
1) Defined by design. Not subject to production test  
2) See ″Gate charge waveforms″ for parameter definition  
3) Diode pulse current is defined by thermal and/or package limits  
4) Maximum allowed hard-commutated current through diode at di/dt=1000 A/µs  
Final Data Sheet  
4
Rev.ꢀ2.2,ꢀꢀ2022-11-09  
OptiMOSTM3ꢀPower-Transistor,ꢀ300ꢀV  
BSC13DN30NSFD  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀDrainꢀcurrent  
200  
20  
16  
12  
8
150  
100  
50  
4
0
0
0
50  
100  
150  
200  
0
50  
100  
150  
200  
TCꢀ[°C]  
TCꢀ[°C]  
Ptot=f(TC)  
ID=f(TC);ꢀVGS≥10ꢀV  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
102  
101  
1 µs  
10 µs  
100 µs  
101  
100  
1 ms  
0.5  
10 ms  
0.2  
0.1  
DC  
100  
10-1  
0.05  
0.02  
0.01  
single pulse  
10-1  
10-2  
10-1  
100  
101  
102  
103  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
5
Rev.ꢀ2.2,ꢀꢀ2022-11-09  
OptiMOSTM3ꢀPower-Transistor,ꢀ300ꢀV  
BSC13DN30NSFD  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
40  
260  
240  
220  
200  
180  
160  
10 V  
30  
7 V  
5 V  
4.5 V  
140  
5 V  
7 V  
10 V  
20  
120  
100  
80  
60  
40  
20  
0
4.5 V  
10  
0
0
1
2
3
4
5
0
10  
20  
30  
VDSꢀ[V]  
IDꢀ[A]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance  
25  
60  
50  
40  
30  
20  
10  
0
20  
15  
10  
175 °C  
5
25 °C  
0
0
2
4
6
8
0
10  
20  
30  
40  
VGSꢀ[V]  
IDꢀ[A]  
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj  
gfs=f(ID);ꢀTj=25ꢀ°C  
Final Data Sheet  
6
Rev.ꢀ2.2,ꢀꢀ2022-11-09  
OptiMOSTM3ꢀPower-Transistor,ꢀ300ꢀV  
BSC13DN30NSFD  
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance  
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage  
440  
4.0  
400  
360  
320  
280  
240  
3.5  
900 µA  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
90 µA  
200  
98%  
160  
typ  
120  
80  
40  
0
-60  
-20  
20  
60  
100  
140  
180  
-60  
-20  
20  
60  
100  
140  
180  
Tjꢀ[°C]  
Tjꢀ[°C]  
RDS(on)=f(Tj);ꢀID=16ꢀA;ꢀVGS=10ꢀV  
VGS(th)=f(Tj);ꢀVGS=VDS;ꢀparameter:ꢀID  
Diagramꢀ11:ꢀTyp.ꢀcapacitances  
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
104  
102  
25 °C  
175 °C  
25°C, 98%  
175°C, 98%  
Ciss  
103  
Coss  
102  
101  
Crss  
101  
100  
100  
0
40  
80  
120  
160  
0.0  
0.5  
1.0  
1.5  
2.0  
VDSꢀ[V]  
VSDꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
IF=f(VSD);ꢀparameter:ꢀTj  
Final Data Sheet  
7
Rev.ꢀ2.2,ꢀꢀ2022-11-09  
OptiMOSTM3ꢀPower-Transistor,ꢀ300ꢀV  
BSC13DN30NSFD  
Diagramꢀ13:ꢀAvalancheꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
102  
10  
8
6
240 V  
150 V  
60 V  
101  
25 °C  
4
2
0
100 °C  
150 °C  
100  
100  
101  
102  
103  
0
5
10  
15  
20  
25  
tAVꢀ[µs]  
Qgateꢀ[nC]  
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)  
VGS=f(Qgate);ꢀID=16ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagram Gate charge waveforms  
340  
320  
300  
280  
260  
240  
-60  
-20  
20  
60  
100  
140  
180  
Tjꢀ[°C]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
Final Data Sheet  
8
Rev.ꢀ2.2,ꢀꢀ2022-11-09  
OptiMOSTM3ꢀPower-Transistor,ꢀ300ꢀV  
BSC13DN30NSFD  
5ꢀꢀꢀꢀꢀPackageꢀOutlines  
PACKAGE - GROUP  
NUMBER:  
PG-TDSON-8-U08  
MILLIMETERS  
DIMENSIONS  
MIN.  
0.90  
0.34  
0.15  
4.80  
3.90  
0.00  
5.70  
4.05  
MAX.  
1.20  
0.54  
0.35  
5.35  
4.40  
0.22  
6.10  
4.25  
A
b
c
D
D1  
D2  
E
E1  
e
1.27  
L
0.45  
0.45  
0.65  
0.65  
L1  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TDSON-8,ꢀdimensionsꢀinꢀmm  
Final Data Sheet  
9
Rev.ꢀ2.2,ꢀꢀ2022-11-09  
OptiMOSTM3ꢀPower-Transistor,ꢀ300ꢀV  
BSC13DN30NSFD  
Figureꢀ2ꢀꢀꢀꢀꢀOutlineꢀFootprintꢀ(TDSON-8)  
Final Data Sheet  
10  
Rev.ꢀ2.2,ꢀꢀ2022-11-09  
OptiMOSTM3ꢀPower-Transistor,ꢀ300ꢀV  
BSC13DN30NSFD  
RevisionꢀHistory  
BSC13DN30NSFD  
Revision:ꢀ2022-11-09,ꢀRev.ꢀ2.2  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
2.0  
2.1  
2.2  
2016-10-21  
Release of final version  
2016-12-05  
2022-11-09  
Update Eas  
Update package outline drawing and footnotes  
Trademarks  
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Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe  
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation  
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.  
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis  
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe  
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.  
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s  
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct  
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.  
Information  
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon  
TechnologiesꢀOfficeꢀ(www.infineon.com).  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
11  
Rev.ꢀ2.2,ꢀꢀ2022-11-09  

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