BUP309 [INFINEON]
IGBT (High switching speed Low tail current Latch-up free Avalanche rated); IGBT （高开关速度低尾电流闭锁免费额定雪崩）
| 型号： | BUP309 |
| 厂家： | 
Infineon |
| 描述： | IGBT (High switching speed Low tail current Latch-up free Avalanche rated) |
| 文件： | 总5页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUP 309
IGBT
Preliminary data
• High switching speed
• Low tail current
• Latch-up free
• Avalanche rated
• Low forward voltage drop
Remark: The TO-218 AB case doesn't solve the
standards VDE 0110 and UL 508 for creeping distance
Pin 1
Pin 2
Pin 3
G
C
E
Type
V
I
Package
Ordering Code
CE
C
BUP 309
1700V 25A
TO-218 AB
Q67078-A4204-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
Collector-gate voltage
V
V
1700
V
CE
CGR
R
= 20 kΩ
1700
± 20
GE
Gate-emitter voltage
DC collector current
V
GE
I
I
A
C
T = 25 °C
C
25
16
T = 90 °C
C
Pulsed collector current, t = 1 ms
p
Cpuls
T = 25 °C
50
32
C
T = 90 °C
C
Avalanche energy, single pulse
E
mJ
W
AS
tot
I = 15 A, V = 50 V, R = 25 Ω
C
CC
GE
L = 200 µH, T = 25 °C
23
j
Power dissipation
P
T = 25 °C
C
310
Chip or operating temperature
Storage temperature
T
T
-55 ... + 150 °C
-55 ... + 150
j
stg
Semiconductor Group
1
Jul-30-1996
BUP 309
Maximum Ratings
Parameter
Symbol
Values
E
Unit
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
-
-
-
55 / 150 / 56
Thermal Resistance
≤
Thermal resistance, chip case
R
thJC
0.4
K/W
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Gate threshold voltage
V
V
V
GE(th)
V
GE
= V
I = 1 mA
CE, C
4.5
5.5
6.5
4.2
Collector-emitter saturation voltage
CE(sat)
V
GE
V
GE
V
GE
= 15 V, I = 15 A, T = 25 °C
-
-
-
3.5
-
C
j
= 15 V, I = 15 A, T = 125 °C
-
C
j
= 15 V, I = 15 A, T = 150 °C
4.5
-
C
j
Zero gate voltage collector current
I
I
µA
nA
CES
GES
V
= 1700 V, V = 0 V, T = 25 °C
-
-
1
-
250
CE
CE
GE
j
V
= 1700 V, V = 0 V, T = 125 °C
1000
GE
j
Gate-emitter leakage current
= 20 V, V = 0 V
V
GE
-
-
100
CE
AC Characteristics
Transconductance
g
S
fs
V
= 20 V, I = 15 A
-
-
-
-
-
-
CE
C
Input capacitance
= 25 V, V = 0 V, f = 1 MHz
C
C
C
pF
iss
V
CE
2000
160
65
2700
240
GE
Output capacitance
= 25 V, V = 0 V, f = 1 MHz
oss
rss
V
CE
GE
Reverse transfer capacitance
= 25 V, V = 0 V, f = 1 MHz
V
CE
100
GE
Semiconductor Group
2
Jul-30-1996
BUP 309
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ.
Unit
min.
max.
Switching Characteristics, Inductive Load at T = 125 °C
j
Turn-on delay time
= 1200 V, V = 15 V, I = 15 A
t
t
t
t
ns
d(on)
V
CC
GE
C
Ω
R
Gon
= 33
-
-
-
-
-
-
Rise time
= 1200 V, V = 15 V, I = 15 A
r
V
CC
GE
C
R
Gon
= 33 Ω
-
-
Turn-off delay time
= 1200 V, V = -15 V, I = 15 A
d(off)
V
CC
GE
C
R
Goff
= 33 Ω
150
50
230
80
Fall time
= 1200 V, V = -15 V, I = 15 A
f
V
CC
GE
C
R
Goff
= 33 Ω
Semiconductor Group
3
Jul-30-1996
BUP 309
Power dissipation
Collector current
ƒ
ƒ
I = (T )
C C
P
= (T )
tot
C
≤
≥
≤
j
parameter: T 150 °C
parameter: V
15 V , T 150 °C
j
GE
26
A
320
W
22
Ptot
240
IC
20
18
16
14
12
10
8
200
160
120
80
6
4
40
0
2
0
0
20
40
60
80 100 120
°C 160
TC
0
20
40
60
80 100 120
°C 160
TC
Safe operating area
Transient thermal impedance IGBT
ƒ
ƒ
I = (V
)
Z
= (t )
th JC
C
CE
p
≤
parameter: D = 0, T = 25°C , T 150 °C
parameter: D = t / T
C
j
p
10 2
10 0
t
= 3.4µs
10 µs
p
A
K/W
IC
ZthJC
10 1
10 -1
100 µs
1 ms
D = 0.50
0.20
10 0
10 -2
0.10
10 ms
0.05
0.02
single pulse
0.01
DC
10 3
10 -1
10 -3
10 0
10 1
10 2
V
10 -5
10 -4
10 -3
10 -2
10 -1 s 10 0
tp
VCE
Semiconductor Group
4
Jul-30-1996
BUP 309
Package Outlines
Dimensions in mm
Weight: 8 g
Semiconductor Group
5
Jul-30-1996
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