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BUZ101SL-4 [INFINEON]

SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated); SIPMOS功率晶体管（四沟道增强模式的逻辑电平雪崩额定的dv / dt评分）
BUZ101SL-4
型号： BUZ101SL-4
厂家： Infineon    Infineon
描述：

SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)
SIPMOS功率晶体管（四沟道增强模式的逻辑电平雪崩额定的dv / dt评分）

晶体 晶体管 功率场效应晶体管 开关 脉冲 光电二极管 局域网
文件： 总8页 (文件大小：93K)
中文：  中文翻译
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相关型号：

BUZ101SL4

 TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 55V V(BR)DSS | 4.1A I(D) | SO

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BUZ101SLE3045

 TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 20A I(D) | TO-263AB

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BUZ101SLE3045A

 SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated)

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INFINEON

BUZ102

 SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)

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BUZ102AL

 SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated)

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BUZ102S

 SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)

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INFINEON

BUZ102S-4

 Power Field-Effect Transistor, 6.4A I(D), 55V, 0.028ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DSO-28

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BUZ102S4

 TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 55V V(BR)DSS | 6.4A I(D) | SO

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BUZ102SE3045

 SIPMOS Power Transistor

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BUZ102SE3045A

 SIPMOS Power Transistor

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BUZ102SL

 SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)

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BUZ102SL-4

 SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)

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BUZ102SL4

 TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 55V V(BR)DSS | 6.2A I(D) | SO

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ETC

BUZ102SLE3045

 TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 47A I(D) | TO-263AB

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ETC

BUZ102SLE3045A

 Power Field-Effect Transistor, 47A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN

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BUZ103

 SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)

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BUZ103AL

 SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated)

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BUZ103S

 SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature)

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BUZ103S-4

 Power Field-Effect Transistor, 5.3A I(D), 55V, 0.045ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, DSO-28

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BUZ103S4

 TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 55V V(BR)DSS | 5.3A I(D) | SO

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ETC
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