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BUZ103 [INFINEON]

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance); SIPMOS大功率晶体管（N沟道增强型雪崩额定的dv / dt额定的低导通电阻）
BUZ103
型号： BUZ103
厂家： Infineon    Infineon
描述：

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated Low on-resistance)
SIPMOS大功率晶体管（N沟道增强型雪崩额定的dv / dt额定的低导通电阻）

晶体 晶体管
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BUZ 103  
®
SIPMOS Power Transistor  
• N channel  
• Enhancement mode  
• Avalanche-rated  
• dv/dt rated  
• Low on-resistance  
• 175°C operating temperature  
• also in TO-220 SMD available  
Pin 1  
Pin 2  
Pin 3  
G
D
S
Type  
V
DS  
I
R
DS(on)  
Package  
Ordering Code  
D
Ω
BUZ 103  
50 V  
40 A  
0.04  
TO-220 AB  
C67078-S1352-A2  
Maximum Ratings  
Parameter  
Symbol  
Values  
40  
Unit  
Continuous drain current  
I
A
D
T = 23 °C  
C
Pulsed drain current  
I
Dpuls  
T = 25 °C  
C
160  
Avalanche energy, single pulse  
E
AS  
mJ  
Ω
I = 40 A, V = 25 V, R = 25  
D
DD  
GS  
L = 63 µH, T = 25 °C  
100  
j
Reverse diode dv/dt  
dv/dt  
kV/µs  
I = 40 A, V = 40 V, di /dt = 200 A/µs  
S
DS  
F
T
= 175 °C  
6
jmax  
±
Gate source voltage  
Power dissipation  
V
P
20  
V
GS  
W
tot  
T = 25 °C  
C
120  
Operating temperature  
Storage temperature  
T
T
-55 ... + 175 °C  
-55 ... + 175  
j
stg  
≤
Thermal resistance, chip case  
R
R
1.25  
K/W  
thJC  
Thermal resistance, chip to ambient  
DIN humidity category, DIN 40 040  
IEC climatic category, DIN IEC 68-1  
≤ 75  
thJA  
E
55 / 175 / 56  
Semiconductor Group  
1
07/96  
BUZ 103  
Electrical Characteristics, at T = 25°C, unless otherwise specified  
j
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
Static Characteristics  
Drain- source breakdown voltage  
V
V
V
(BR)DSS  
GS(th)  
DSS  
V
GS  
= 0 V, I T = -40 °C  
50  
-
-
D,  
j
Gate threshold voltage  
=
V
V
I = 1 mA  
2.1  
3
4
GS DS, D  
Zero gate voltage drain current  
I
V
V
V
= 50 V, V = 0 V, T = 25 °C  
-
-
-
0.1  
1
1
µA  
nA  
µA  
nA  
DS  
DS  
DS  
GS  
j
= 50 V, V = 0 V, T = -40 °C  
100  
100  
GS  
j
= 50 V, V = 0 V, T = 150 °C  
10  
GS  
j
Gate-source leakage current  
= 20 V, V = 0 V  
I
GSS  
V
GS  
-
-
10  
100  
DS  
Ω
Drain-Source on-resistance  
= 10 V, I = 28 A  
R
DS(on)  
V
GS  
0.03  
0.04  
D
Semiconductor Group  
2
07/96  
BUZ 103  
Electrical Characteristics, at T = 25°C, unless otherwise specified  
j
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
Dynamic Characteristics  
Transconductance  
g
S
fs  
≥
V
DS  
2 I  
R I = 28 A  
10  
18  
-
* D * DS(on)max, D  
Input capacitance  
= 0 V, V = 25 V, f = 1 MHz  
C
C
C
pF  
iss  
oss  
V
GS  
-
-
-
900  
330  
140  
1200  
500  
210  
DS  
Output capacitance  
= 0 V, V = 25 V, f = 1 MHz  
V
GS  
DS  
Reverse transfer capacitance  
= 0 V, V = 25 V, f = 1 MHz  
rss  
V
GS  
DS  
Turn-on delay time  
= 30 V, V = 10 V, I = 3 A  
t
t
t
t
ns  
d(on)  
V
DD  
GS  
D
Ω
R
GS  
= 50  
-
-
-
-
20  
30  
Rise time  
= 30 V, V = 10 V, I = 3 A  
r
V
DD  
GS  
D
Ω
R
GS  
= 50  
70  
105  
200  
130  
Turn-off delay time  
= 30 V, V = 10 V, I = 3 A  
d(off)  
V
DD  
GS  
D
Ω
R
GS  
= 50  
150  
95  
Fall time  
= 30 V, V = 10 V, I = 3 A  
f
V
DD  
GS  
D
Ω
= 50  
R
GS  
Semiconductor Group  
3
07/96  
BUZ 103  
Electrical Characteristics, at T = 25°C, unless otherwise specified  
j
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
Reverse Diode  
Inverse diode continuous forward current I  
A
S
T = 25 °C  
-
-
-
-
-
-
40  
160  
1.8  
-
C
Inverse diode direct current,pulsed  
I
SM  
T = 25 °C  
C
-
Inverse diode forward voltage  
V
SD  
V
V
GS  
= 0 V, I = 80 A  
1.2  
60  
0.08  
F
Reverse recovery time  
V = 30 V, I =l di /dt = 100 A/µs  
t
ns  
µC  
rr  
R
F S,  
F
Reverse recovery charge  
Q
rr  
=
V = 30 V, I l di /dt = 100 A/µs  
R
-
F S,  
F
Semiconductor Group  
4
07/96  
BUZ 103  
Drain current  
Power dissipation  
ƒ
I = (T )  
ƒ
P
= (T )  
D
C
tot  
C
≥
parameter: V  
10 V  
GS  
45  
A
130  
W
110  
100  
90  
ID  
Ptot  
35  
30  
25  
20  
15  
10  
80  
70  
60  
50  
40  
30  
20  
5
0
10  
0
0
20 40 60 80 100 120 140 °C 180  
TC  
0
20 40 60 80 100 120 140 °C 180  
TC  
Safe operating area  
Transient thermal impedance  
ƒ
ƒ
I = (V  
)
Z
= (t )  
th JC  
D
DS  
p
parameter: D = 0.01, T = 25°C  
parameter: D = t / T  
C
p
10 1  
10 3  
K/W  
A
ID  
ZthJC  
t
= 11.0µs  
10 0  
p
I
10 2  
V
100 µs  
1 ms  
10 -1  
R
D = 0.50  
0.20  
10 1  
0.10  
10 ms  
0.05  
10 -2  
0.02  
0.01  
single pulse  
DC  
10 0  
10 -3  
10 0  
10 1  
V 10 2  
VDS  
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0  
tp  
5
07/96  
Semiconductor Group  
BUZ 103  
Typ. output characteristics  
ƒ(  
Typ. drain-source on-resistance  
ƒ(  
I =  
V
)
R
=
I )  
D
D
DS  
DS (on)  
parameter: t = 80 µs  
parameter: V  
p
GS  
90  
0.13  
P
tot = 120W  
l
k
j
Ω
a
b
c
d
e
f
g
A
70  
60  
50  
40  
30  
20  
V
[V]  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
9.0  
10.0  
20.0  
0.11  
GS  
a
ID  
RDS (on)  
0.10  
b
c
d
e
f
i
0.09  
0.08  
0.07  
0.06  
0.05  
0.04  
0.03  
0.02  
h
g
e
g
h
i
f
j
h
j
k
l
i
d
c
a
V
[V] =  
b
GS  
a
10  
0
c
d
e
f
g
h
i
j
0.01  
0.00  
b
5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0  
0.0  
1.0  
2.0  
3.0  
4.0  
V
6.0  
0
10  
20  
30  
40  
50  
60  
A
75  
VDS  
ID  
Typ. transfer characteristics I = f (V  
)
Typ. forward transconductance g = f (I )  
D
fs  
D
GS  
parameter: t = 80 µs  
parameter: t = 80 µs,  
p
p
≥
≥
V
DS  
2 x I x R  
V
DS  
2 x I x R  
D
DS(on)max  
D
DS(on)max  
20  
S
60  
A
50  
45  
40  
35  
30  
25  
20  
15  
10  
16  
14  
12  
10  
8
ID  
gfs  
6
4
2
0
5
0
0
1
2
3
4
5
6
7
8
V
10  
0
10  
20  
30  
40  
A
60  
VGS  
ID  
Semiconductor Group  
6
07/96  
BUZ 103  
Gate threshold voltage  
Drain-source on-resistance  
ƒ
= (T )  
j
V
ƒ
= (T )  
j
R
GS (th)  
DS (on)  
parameter: V = V , I = 1 mA  
parameter: I = 28 A, V = 10 V  
GS  
DS  
D
D
GS  
4.6  
V
0.11  
Ω
98%  
4.0  
0.09  
VGS(th)  
RDS (on)  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
0.08  
0.07  
0.06  
0.05  
0.04  
0.03  
0.02  
typ  
2%  
98%  
typ  
0.4  
0.0  
0.01  
0.00  
-60  
-20  
20  
60  
100  
°C  
Tj  
180  
-60  
-20  
20  
60  
100  
°C  
Tj  
180  
Typ. capacitances  
Forward characteristics of reverse diode  
C = f (V )  
ƒ
I = (V  
)
DS  
F
SD  
parameter:V = 0V, f = 1MHz  
parameter: T , t = 80 µs  
GS  
j
p
10 4  
10 3  
pF  
A
IF  
C
10 3  
10 2  
10 1  
10 2  
10 1  
10 0  
Ciss  
Coss  
Crss  
Tj = 25 °C typ  
Tj = 175 °C typ  
Tj = 25 °C (98%)  
Tj = 175 °C (98%)  
0
5
10  
15  
20  
25  
30  
V
40  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
V
3.0  
VDS  
VSD  
7
07/96  
Semiconductor Group  
BUZ 103  
ƒ
Avalanche energy E = (T )  
Typ. gate charge  
AS  
j
ƒ
parameter: I = 40 A, V = 25 V  
V
= (Q  
)
D
DD  
GS  
Gate  
Ω
R
= 25 , L = 63 µH  
parameter: I  
= 60 A  
D puls  
GS  
16  
110  
mJ  
90  
80  
70  
60  
50  
40  
30  
20  
V
EAS  
VGS  
12  
V
V
DS max  
0,2  
0,8  
DS max  
10  
8
6
4
2
10  
0
0
0
20  
40  
60  
80 100 120 140  
°C 180  
Tj  
5
10 15 20 25 30 35 nC 45  
QGate  
Drain-source breakdown voltage  
ƒ
= (T )  
j
V
(BR)DSS  
62  
V
60  
V(BR)DSS 59  
58  
57  
56  
55  
54  
53  
52  
51  
50  
49  
48  
47  
-60  
-20  
20  
60  
100  
°C  
Tj  
180  
Semiconductor Group  
8
07/96  
BUZ 103  
Package Outlines  
TO-220 AB  
Dimension in mm  
Semiconductor Group  
9
07/96  

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