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BUZ103SL [INFINEON]

SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated); SIPMOS大功率晶体管（ N沟道增强模式的逻辑电平雪崩额定的dv / dt评分）
BUZ103SL
型号： BUZ103SL
厂家： Infineon    Infineon
描述：

SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)
SIPMOS大功率晶体管（ N沟道增强模式的逻辑电平雪崩额定的dv / dt评分）

晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
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BUZ 103 SL  
SPP28N05L  
®
SIPMOS Power Transistor  
• N channel  
• Enhancement mode  
• Logic Level  
• Avalanche-rated  
• dv/dt rated  
• 175°C operating temperature  
• also in SMD available  
Pin 1  
Pin 2  
Pin 3  
G
D
S
Type  
Package  
Ordering Code  
VDS  
ID  
RDS(on  
)
W
BUZ 103 SL  
55 V  
28 A  
0.05  
TO-220 AB  
Q67040-S4008-A2  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Continuous drain current  
I
A
D
T = 25 °C  
28  
20  
C
T = 100 °C  
C
Pulsed drain current  
I
Dpuls  
T = 25 °C  
112  
C
Avalanche energy, single pulse  
E
mJ  
AS  
W
I = 28 A, V = 25 V, R = 25  
D
DD  
GS  
L = 357 µH, T = 25 °C  
140  
28  
j
Avalanche current,limited by T  
I
A
jmax  
AR  
Avalanche energy,periodic limited by T  
E
7.5  
mJ  
jmax  
AR  
Reverse diode dv/dt  
dv/dt  
kV/µs  
I = 28 A, V = 40 V, di /dt = 200 A/µs  
S
DS  
F
T
= 175 °C  
6
jmax  
Gate source voltage  
Power dissipation  
V
±
14  
V
GS  
P
W
tot  
T = 25 °C  
75  
C
Semiconductor Group  
1
30/Jan/1998  
BUZ 103 SL  
SPP28N05L  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Operating temperature  
T
-55 ... + 175  
-55 ... + 175  
°C  
j
Storage temperature  
T
stg  
£
Thermal resistance, junction - case  
Thermal resistance, junction - ambient  
IEC climatic category, DIN IEC 68-1  
R
2
K/W  
thJC  
£
R
62  
thJA  
55 / 175 / 56  
Electrical Characteristics,  
Parameter  
at T = 25°C, unless otherwise specified  
j
Symbol  
min.  
Values  
typ.  
Unit  
max.  
Static Characteristics  
Drain- source breakdown voltage  
= 0 V, I = 0.25 mA, T = 25 °C  
V
V
I
V
(BR)DSS  
V
55  
-
-
GS  
D
j
Gate threshold voltage  
I = 50 µA  
GS(th)  
V
=V  
1.2  
1.6  
2
GS DS, D  
Zero gate voltage drain current  
µA  
DSS  
V
V
V
= 50 V, V = 0 V, T = -40 °C  
-
-
0.1  
1
DS  
DS  
DS  
GS  
j
= 50 V, V = 0 V, T = 25 °C  
-
-
0.1  
-
GS  
j
= 50 V, V = 0 V, T = 150 °C  
100  
GS  
j
Gate-source leakage current  
= 20 V, V = 0 V  
I
nA  
GSS  
V
-
10  
100  
GS  
DS  
W
Drain-Source on-resistance  
R
DS(on)  
V
= 4.5 V, I = 20 A  
-
-
0.04  
0.05  
0.03  
GS  
GS  
D
V
= 10 V, I = 20 A  
0.025  
D
Semiconductor Group  
2
30/Jan/1998  
BUZ 103 SL  
SPP28N05L  
Electrical Characteristics,  
Parameter  
at T = 25°C, unless otherwise specified  
j
Symbol  
min.  
Values  
typ.  
Unit  
max.  
Dynamic Characteristics  
Transconductance  
g
S
fs  
³
V
2 I  
R I = 20 A  
10  
-
-
DS  
* D * DS(on)max, D  
Input capacitance  
= 0 V, V = 25 V, f = 1 MHz  
C
C
C
t
pF  
iss  
V
-
770  
230  
130  
960  
300  
165  
GS  
DS  
Output capacitance  
= 0 V, V = 25 V, f = 1 MHz  
oss  
rss  
V
-
-
GS  
DS  
Reverse transfer capacitance  
= 0 V, V = 25 V, f = 1 MHz  
V
GS  
DS  
Turn-on delay time  
= 30 V, V = 4.5 V, I = 28 A  
ns  
d(on)  
V
DD  
GS  
D
W
R = 6.8  
-
-
-
10  
75  
30  
15  
G
Rise time  
= 30 V, V = 4.5 V, I = 28 A  
t
t
t
r
V
DD  
GS  
D
W
R = 6.8  
115  
45  
G
Turn-off delay time  
= 30 V, V = 4.5 V, I = 28 A  
d(off)  
V
DD  
GS  
D
W
R = 6.8  
G
Fall time  
f
V
= 30 V, V = 4.5 V, I = 28 A  
GS D  
DD  
W
R = 6.8  
-
-
-
-
-
20  
1
30  
1.5  
30  
50  
-
G
Gate charge at threshold  
= 40 V, I = 0.1 A, V =0 to 1 V  
Q
Q
Q
V
nC  
g(th)  
V
DD  
D
GS  
Gate charge at 5.0 V  
= 40 V, I = 28 A, V =0 to 5 V  
g(5)  
V
20  
32  
4
DD  
D
GS  
Gate charge total  
= 40 V, I = 28 A, V =0 to 10 V  
g(total)  
(plateau)  
V
DD  
D
GS  
Gate plateau voltage  
= 40 V, I = 28 A  
V
V
DD  
D
Semiconductor Group  
3
30/Jan/1998  
BUZ 103 SL  
SPP28N05L  
Electrical Characteristics,  
Parameter  
at T = 25°C, unless otherwise specified  
j
Symbol  
min.  
Values  
typ.  
Unit  
max.  
Reverse Diode  
Inverse diode continuous forward current  
I
A
S
T = 25 °C  
-
-
-
-
-
-
28  
C
Inverse diode direct current,pulsed  
I
SM  
T = 25 °C  
-
112  
1.8  
90  
C
Inverse diode forward voltage  
V
t
V
SD  
V
= 0 V, I = 56 A  
1.1  
60  
0.15  
GS  
F
Reverse recovery time  
ns  
µC  
rr  
V = 30 V, I =l di /dt = 100 A/µs  
R
F
S,  
F
Reverse recovery charge  
Q
rr  
V = 30 V, I =l di /dt = 100 A/µs  
0.25  
R
F
S,  
F
Semiconductor Group  
4
30/Jan/1998  
BUZ 103 SL  
SPP28N05L  
Power dissipation  
Drain current  
¦
¦
I = (T )  
D C  
P
= (T )  
tot  
C
³
parameter: V  
4 V  
GS  
80  
W
30  
A
26  
24  
22  
20  
18  
16  
14  
12  
10  
8
Ptot  
ID  
60  
50  
40  
30  
20  
10  
6
4
2
0
0
0
20 40 60 80 100 120 140 °C 180  
0
20 40 60 80 100 120 140 °C 180  
TC  
TC  
Safe operating area  
Transient thermal impedance  
¦
¦
= (t )  
th JC p  
I = (V  
)
Z
D
DS  
parameter: D = 0, T = 25°C  
parameter: D = t / T  
C
p
10 1  
K/W  
10 3  
A
10 0  
ID  
ZthJC  
t
= 15.0µs  
p
10 2  
10 1  
10 0  
10 -1  
D = 0.50  
0.20  
100 µs  
10 -2  
0.10  
0.05  
1 ms  
0.02  
10 -3  
0.01  
single pulse  
10 ms  
DC  
10 -4  
10 0  
10 1  
V 10 2  
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0  
VDS  
tp  
Semiconductor Group  
5
30/Jan/1998  
BUZ 103 SL  
SPP28N05L  
Typ. output characteristics  
Typ. drain-source on-resistance  
¦ (  
¦ (  
I = V  
)
R
= I )  
D
DS  
DS (on)  
D
parameter: t = 80 µs , T = 25 °C  
parameter: t = 80 µs, T = 25 °C  
p j  
p
j
65  
A
0.16  
P
tot = 75W  
a
b
c
d
e
k
j
h
i
g
l
W
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
V
[V]  
GS  
a
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
8.0  
10.0  
ID  
RDS (on)  
f
b
c
d
e
f
0.12  
0.10  
0.08  
0.06  
0.04  
e
g
h
i
d
j
k
l
c
a
f
g
h
i
j
k
V
[V] =  
b
b
GS  
a
0.02  
0.00  
c
d
e
f
g
h
i
j
k
5
0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0  
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0  
V
5.0  
0
10  
20  
30  
40  
A
55  
VDS  
ID  
Typ. transfer characteristics ID = f (VGS  
)
parameter: t = 80 µs  
p
V
³
2 x I x R  
DS  
D
DS(on)max  
60  
A
50  
45  
40  
35  
30  
25  
20  
15  
10  
ID  
5
0
0
1
2
3
4
5
6
7
8
V
VGS  
10  
Semiconductor Group  
6
30/Jan/1998  
BUZ 103 SL  
SPP28N05L  
Gate threshold voltage  
= f (T )  
Drain-source on-resistance  
¦
V
R
= (T )  
GS(th)  
j
DS (on)  
j
parameter: I = 20 A, V = 4.5 V  
parameter:VGS=VDS,ID = 50µA  
D
GS  
0.16  
3.0  
V
W
2.6  
VGS(th) 2.4  
2.2  
RDS (on)  
0.12  
0.10  
0.08  
0.06  
0.04  
2.0  
1.8  
1.6  
98%  
typ  
1.4  
1.2  
1.0  
max  
0.8  
0.6  
typ  
0.4  
0.02  
0.00  
0.2  
0.0  
min  
-60  
-20  
20  
60  
100  
°C  
Tj  
180  
-60  
-20  
20  
60  
100  
140  
V
Tj  
200  
Typ. capacitances  
C = f (V  
Forward characteristics of reverse diode  
¦
)
I = (V  
)
SD  
DS  
F
parameter: T , t = 80 µs  
parameter:V = 0V, f = 1MHz  
j
p
GS  
10 4  
10 3  
A
C
IF  
pF  
10 2  
10 1  
10 0  
10 3  
Ciss  
= 25 °C typ  
Tj  
Tj  
Tj  
= 175 °C typ  
= 25 °C (98%)  
Coss  
Tj = 175 °C (98%)  
Crss  
10 2  
0
5
10  
15  
20  
25  
30  
V
VDS  
40  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
V
VSD  
3.0  
Semiconductor Group  
7
30/Jan/1998  
BUZ 103 SL  
SPP28N05L  
¦
Avalanche energy E = (T )  
Typ. gate charge  
AS  
j
¦
parameter: I = 28 A, V = 25 V  
V
= (Q  
Gate  
)
D
DD  
GS  
W
R
= 25 , L = 357 µH  
parameter: I  
= 28 A  
D puls  
GS  
16  
V
150  
mJ  
130  
120  
110  
100  
90  
EAS  
VGS  
12  
10  
8
80  
70  
V
V
DS max  
0,2  
0,8  
DS max  
60  
6
50  
40  
4
30  
20  
2
0
10  
0
20  
40  
60  
80 100 120 140  
°C 180  
0
5
10 15 20 25 30 35 40 nC 50  
Tj  
QGate  
Drain-source breakdown voltage  
¦
= (T )  
j
V
(BR)DSS  
65  
V
V(BR)DSS  
61  
59  
57  
55  
53  
51  
49  
-60  
-20  
20  
60  
100  
°C  
Tj  
180  
Semiconductor Group  
8
30/Jan/1998  

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