BXY44-T1S [INFINEON]
Pin Diode, 200V V(BR), Silicon, HERMETIC SEALED PACKAGE-2;
| 型号： | BXY44-T1S |
| 厂家： | 
Infineon |
| 描述： | Pin Diode, 200V V(BR), Silicon, HERMETIC SEALED PACKAGE-2 衰减器 开关 二极管 |
| 文件： | 总5页 (文件大小：189K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BXY44
T
T1
HiRel Silicon PIN Diode
HiRel Discrete and Microwave
Semiconductor
Current controlled RF resistor for RF
attenuators and switches
High reverse voltage
Hermetically sealed microwave package
Space Qualified
ESA/SCC Detail Spec. No.: 5513/030
Type Variant No.s 04 to 07
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
Marking Ordering Code
see below
Pin Configuration
Package
BXY44-T (ql)
-
T
1
1
2
BXY44-T1 (ql)
T1
2
(ql) Quality Level:
P: Professional Quality
H: High Rel Quality
S: Space Quality
ES: ESA Space Quality
(see order instructions for ordering example)
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Maximum Ratings
Parameter
Symbol
VR
Values
200
Unit
V
Reverse Voltage
Forward Current
IF
400
mA
mW
°C
Power Dissipation1)
Operating Temperature Range
Storage Temperature Range
Soldering Temperature 2)
Junction Temperature
Ptot
500
Top
-55 to +150
-65 to +175
+235
Tstg
Tsol
Tj
°C
°C
150
°C
Thermal Resistance Junction-Case
Rth(j-c)
K/W
110
140
BXY44-T
BXY44-T1
Notes.:
1.)For BXY44-T; -T2, -FP: At TCASE = 95 °C. For TCASE > 95 °C derating is required.
For BXY44-T1: At TCASE = 80 °C. For TCASE > 80 °C derating is required.
2.) During 5 sec. maximum. The same terminal shall not be resoldered until 5 minutes have
elapsed.
Electrical Characteristics
at TA=25°C; unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
100
5
DC Characteristics
Reverse Current 1
VR1=200V
IR1
IR2
VF
-
-
-
-
nA
nA
V
Reverse Current 2
VR2=100V
-
Forward Voltage
IF=100mA
1,0
1,05
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Electrical Characteristics (continued)
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Total Capacitance
VR=50V; f=1MHz
CT
pF
BXY44-T, -T1
-
0,20
900
16
0,35
1300
28
Forward Resistance 1
f=100MHz, IF1=10µA
BXY44-T, -T1
RF1
RF2
RF3
τL
800
12
Forward Resistance 2
f=100MHz, IF2=1mA
BXY44-T, -T1
Forward Resistance 3
f=100MHz, IF3=10mA
BXY44-T, -T1
2,0
3,0
5,0
-
Minority Carrier Lifetime
IF=10mA, IR=6mA, IR=3mA
300
800
ns
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BXY44
T Package
B
X1
A
C
Symbol
Millimetre
Y1
Y2
min
1,30
1,15
-
max
1,45
1,35
0,40
A
B
C
2
1
T1 Package
X1
B
A
Y1
Y2
Symbol
Millimetre
min
1,30
1,15
-
0,10
-
0,06
5,50
0,40
max
1,45
1,35
0,40
0,50
0,30
0,10
-
C
A
B
C
D
E
F
2
1
D
E
F
H
G
G
G
H
0,60
IFAG IMM RPD D HIR
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BXY44
Edition 2011-02
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© Infineon Technologies AG 2011
All Rights Reserved.
Attention please!
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics (“Beschaffenheitsgarantie“). With respect to any examples or
hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual
property rights of an third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For
information on the types in question please contact your nearest Infineon Technologies
Office.
Infineon Technologies Components may only be used in life-support devices or systems with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system, or to affect
the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body, or to
support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be endangered.
IFAG IMM RPD D HIR
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