首页 |元器件品牌

CFY67-06H [INFINEON]

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICRO-X-4;
CFY67-06H
型号： CFY67-06H
厂家： Infineon    Infineon
描述：

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICRO-X-4

放大器 晶体管
文件： 总9页 (文件大小：46K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
CFY67  
HiRel K-Band GaAs Super Low Noise HEMT  
• HiRel Discrete and Microwave  
4
1
3
2
Semiconductor  
• Pseudo-morphic AlGaAs/InGaAs/GaAs HEMT  
• For professional super low-noise amplifiers  
• For frequencies from 500 MHz to > 20 GHz  
• Hermetically sealed microwave package  
• Super low noise figure, high associated gain  
•
Space Qualified  
ESA/SCC Detail Spec. No.: 5613/004,  
Type Variant No.s 01 to 04, 05 foreseen (tbc.)  
ESD: Electrostatic discharge sensitive device, observe handling precautions!  
Type  
Marking Ordering Code Pin Configuration  
Package  
1
2
3
4
CFY67-06 (ql)  
CFY67-08 (ql)  
CFY67-08P (ql)  
CFY67-10 (ql)  
CFY67-10P (ql)  
-
see below  
G
S
D
S
Micro-X  
CFY67-nnl: specifies gain and output power levels (see electrical characteristics)  
(ql) Quality Level:  
P: Professional Quality,  
H: High Rel Quality,  
S: Space Quality,  
Ordering Code:  
Ordering Code:  
Ordering Code:  
Ordering Code:  
Q62702F1699  
on request  
on request  
ES: ESA Space Quality,  
Q62702F1699  
(see order instructions for ordering example)  
Semiconductor Group  
1 of 9  
Draft D, Jul. 98  
CFY67  
Maximum Ratings  
Parameter  
Symbol  
VDS  
VDG  
VGS  
ID  
Values  
3.5  
Unit  
V
Drain-source voltage  
Drain-gate voltage  
4.5  
V
Gate-source voltage (reverse / forward)  
Drain current  
- 3... + 0.5  
60  
V
mA  
mA  
dBm  
°C  
Gate forward current  
IG  
2
1)  
PRF,in  
TJ  
+ 10  
150  
RF Input Power, C- and X-Band  
Junction temperature  
Storage temperature range  
Tstg  
Ptot  
Tsol  
- 65... + 150  
200  
°C  
2)  
mW  
°C  
Total power dissipation  
3)  
230  
Soldering temperature  
Thermal Resistance  
Junction-soldering point  
Rth JS  
K/W  
≤ 515 (tbc.)  
Notes.:  
1) For VDS ≤ 2 V. For VDS > 2 V, derating is required.  
2) At TS = + 47 °C. For TS > + 47 °C derating is required.  
3) During 15 sec. maximum. The same terminal shall not be resoldered unt il 3 minutes have  
elapsed.  
Semiconductor Group  
2 of 9  
Draft D, Jul. 98  
CFY67  
Electrical Characteristics (at TA=25°C; unless otherwise specified)  
Parameter  
Symbol  
Values  
Unit  
min.  
typ.  
max.  
DC Characteristics  
Drain-source saturation current  
VDS = 2 V, VGS = 0 V  
IDss  
15  
0.2  
-
30  
60  
2.0  
-
mA  
V
Gate threshold voltage  
VDS = 2 V, ID = 1 mA  
-VGth  
0.7  
< 50  
Drain current at pinch-off  
VDS = 1.5 V, VGS = - 3 V  
IDp  
µA  
Gate leakage current at pinch-off  
VDS = 1.5 V, VGS = - 3 V  
-IGp  
-
< 50  
65  
200  
µA  
Transconductance  
gm15  
-IG15  
Rth JS  
50  
-
-
mS  
µA  
VDS = 2 V, ID = 15 mA  
Gate leakage current at operation  
VDS = 2 V, ID = 15 mA  
< 0.5  
450  
2
-
Thermal resistance  
-
K/W  
junction to soldering point  
Semiconductor Group  
3 of 9  
Draft D, Jul. 98  
CFY67  
Electrical Characteristics (continued)  
Parameter  
Symbol  
Values  
Unit  
min.  
typ.  
max.  
AC Characteristics  
1)  
NF  
dB  
Noise figure  
VDS = 2 V, ID = 15 mA, f = 12 GHz  
CFY67-06  
-
-
-
0.5  
0.7  
0.9  
0.6  
0.8  
1.0  
CFY67-08, -08P  
CFY67-10, 10P  
1)  
Ga  
dB  
Associated gain.  
VDS = 2 V, ID = 15 mA, f = 12 GHz  
CFY67-06  
11.5  
11.0  
10.5  
12.5  
11.5  
11.0  
-
-
-
CFY67-08, -08P  
CFY67-10, 10P  
2)  
P1dB  
dBm  
Output power at 1 dB gain compression  
VDS = 2 V, ID = 20 mA, f = 12 GHz  
CFY67-06, -08, -10  
CFY67-08P, -10P  
Notes.:  
-
11.0  
11.0  
-
-
10.0  
1) Noise figure / sssociated gain characteristics given for minimum noise figure matching  
conditions (fixed generic matching, no fine-tuning).  
2) Output power characteristics given for optimum output power matching conditions (fixed  
generic matching, no fine-tuning).  
Semiconductor Group  
4 of 9  
Draft D, Jul. 98  
CFY67  
Typical Common Source S-Parameters  
CFY67-08: VDS = 2 V, ID = 15 mA, Zo = 50 Ω  
|S11| <S11 |S21| <S21 |S12| <S12 |S22| <S22 k-Fact. S21/S12 MAG  
f
[GHz] [magn] [angle] [magn] [angle] [magn] [angle] [magn] [angle] [magn] [dB]  
[dB]  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
4,5  
5,0  
5,5  
6,0  
6,5  
7,0  
7,5  
8,0  
8,5  
9,0  
9,5  
0,963  
0,938  
0,913  
0,889  
0,865  
0,844  
0,823  
0,800  
0,779  
0,761 -100 4,183  
0,743 -109 4,043  
0,725 -117 3,906  
0,708 -125 3,769  
0,690 -132 3,640  
0,673 -139 3,529  
0,656 -146 3,427  
0,640 -153 3,344  
0,625 -160 3,271  
0,611 -168 3,202  
-15  
-23  
-33  
-42  
-52  
-62  
-72  
-81  
-91  
5,315 165 0,0111 74  
5,182 159 0,0225 68  
5,060 150 0,0317 62  
4,940 142 0,0411 57  
4,824 133 0,0509 53  
4,715 124 0,0585 46  
4,591 115 0,0650 41  
4,450 107 0,0714 36  
0,655  
0,639  
0,625  
0,611  
0,596  
0,582  
0,567  
0,552  
0,534  
0,520  
0,500  
0,490  
0,477  
0,467  
0,455  
0,442  
0,430 -101  
0,417 -104  
0,406 -108  
0,393 -113  
0,381 -118  
0,370 -123  
0,358 -129  
0,351 -134  
0,343 -140  
0,336 -146  
0,330 -151  
0,325 -156  
0,320 -161  
0,315 -167  
0,311 -172  
0,305 -177  
0,301 177  
0,297 172  
0,294 168  
0,290 165  
-14  
-18  
-23  
-28  
-35  
-41  
-47  
-53  
-60  
-66  
-72  
-77  
-83  
-88  
-93  
-97  
0,40  
0,39  
0,42  
0,43  
0,43  
0,45  
0,47  
0,50  
0,52  
0,54  
0,58  
0,60  
0,63  
0,67  
0,71  
0,76  
0,79  
0,84  
0,87  
0,91  
0,94  
0,96  
0,98  
1,01  
1,03  
1,06  
1,09  
1,11  
1,13  
1,14  
1,16  
1,18  
1,19  
1,19  
1,18  
1,17  
26,8  
23,6  
22,0  
20,8  
19,8  
19,1  
18,5  
17,9  
17,5  
17,1  
16,8  
16,4  
16,1  
15,9  
15,6  
15,4  
15,3  
15,1  
14,9  
14,8  
14,7  
14,6  
14,5  
14,4  
14,3  
14,3  
14,2  
14,1  
14,1  
14,0  
14,0  
14,0  
14,0  
13,9  
14,0  
14,0  
4,319  
99 0,0768 31  
91 0,0811 25  
83 0,0850 20  
75 0,0885 15  
68 0,0917 11  
61 0,0942  
54 0,0962  
48 0,0978  
41 0,0998  
34 0,1010  
7
3
-1  
-5  
-9  
28 0,1027 -12  
21 0,1033 -16  
15 0,1044 -20  
10,0 0,597 -175 3,143  
10,5 0,586 177 3,089  
11,0 0,576 169 3,041  
11,5 0,564 161 3,002  
12,0 0,554 154 2,960  
12,5 0,547 146 2,923  
13,0 0,536 139 2,886  
13,5 0,529 131 2,848  
14,0 0,522 124 2,815  
14,5 0,517 116 2,787  
15,0 0,510 108 2,765  
15,5 0,505  
16,0 0,502  
16,5 0,499  
17,0 0,498  
17,5 0,498  
18,0 0,498  
8
1
-5  
0,1056 -24  
0,1068 -28  
0,1070 -32  
13,8  
13,3  
12,7  
12,4  
12,1  
11,9  
11,7  
11,6  
11,4  
11,3  
11,3  
11,4  
11,5  
-12 0,1076 -36  
-19 0,1076 -41  
-26 0,1081 -45  
-33 0,1087 -50  
-40 0,1087 -55  
-46 0,1093 -60  
-54 0,1090 -65  
-61 0,1090 -71  
-68 0,1091 -77  
-75 0,1097 -82  
-80 0,1103 -87  
-84 0,1107 -90  
99  
91  
82  
74  
68  
62  
2,751  
2,735  
2,719  
2,722  
2,741  
2,760  
Semiconductor Group  
5 of 9  
Draft D, Jul. 98  
CFY67  
Typical Common Source S-Parameters (continued)  
CFY67-06: VDS = 2 V, ID = 15 mA, Zo = 50 Ω  
f
|S11| <S11 |S21| <S21 |S12| <S12 |S22| <S22 k-Fact. S21/S12 MAG  
[GHz] [mag] [ang] [mag] [ang] [mag] [ang] [mag] [ang] [mag] [dB]  
[dB]  
0,5  
1,0  
1,5  
2,0  
2,5  
3,0  
3,5  
4,0  
4,5  
5,0  
5,5  
6,0  
6,5  
7,0  
7,5  
8,0  
8,5  
9,0  
9,5  
0,962  
0,937  
0,913  
0,889  
0,860  
0,834  
0,810  
0,784  
0,761  
0,740  
0,720 -107 4,586  
0,701 -116 4,420  
0,682 -124 4,260  
0,663 -131 4,107  
0,644 -139 3,974  
0,627 -148 3,852  
0,611 -157 3,747  
0,595 -165 3,659  
0,581 -173 3,571  
-13  
-22  
-33  
-41  
-51  
-61  
-71  
-80  
-90  
-99  
6,112 166 0,0111 76  
5,956 159 0,0211 69  
5,810 150 0,0302 64  
5,690 142 0,0394 58  
5,522 133 0,0484 53  
5,386 124 0,0567 48  
5,236 116 0,0637 43  
5,067 107 0,0702 38  
0,539  
0,525  
0,511  
0,498  
0,484  
0,469  
0,456  
0,440  
0,423  
0,410  
0,397  
0,385  
0,373  
0,362  
0,351  
0,343  
0,333 -102  
0,323 -107  
0,313 -112  
0,303 -116  
0,293 -121  
0,284 -127  
0,274 -131  
0,265 -135  
0,255 -139  
0,246 -143  
0,235 -146  
0,225 -150  
0,215 -155  
0,207 -159  
0,200 -163  
0,193 -167  
0,187 -171  
0,182 -175  
0,177 -178  
0,174 179  
-15  
-19  
-24  
-30  
-36  
-43  
-49  
-55  
-61  
-67  
-73  
-79  
-84  
-89  
-93  
-98  
0,42  
0,42  
0,44  
0,46  
0,48  
0,50  
0,52  
0,55  
0,58  
0,60  
0,63  
0,66  
0,69  
0,73  
0,77  
0,80  
0,83  
0,86  
0,90  
0,92  
0,95  
0,98  
1,00  
1,02  
1,05  
1,07  
1,10  
1,12  
1,14  
1,15  
1,16  
1,17  
1,17  
1,17  
1,16  
1,14  
27,4  
24,5  
22,8  
21,6  
20,6  
19,8  
19,1  
18,6  
18,1  
17,7  
17,3  
17,0  
16,7  
16,4  
16,2  
15,9  
15,8  
15,6  
15,4  
15,3  
15,1  
15,0  
14,9  
14,8  
14,6  
14,5  
14,4  
14,3  
14,2  
14,1  
14,1  
14,0  
13,9  
13,9  
13,9  
13,8  
4,911  
4,752  
99 0,0760 33  
91 0,0809 28  
84 0,0851 24  
76 0,0889 19  
69 0,0918 15  
62 0,0941 11  
55 0,0962  
49 0,0980  
42 0,0995  
35 0,1008  
29 0,1022  
7
3
-1  
-5  
-9  
10,0 0,567 178 3,497  
10,5 0,556 170 3,430  
11,0 0,546 163 3,368  
11,5 0,537 155 3,317  
12,0 0,528 149 3,265  
12,5 0,520 142 3,216  
13,0 0,513 135 3,169  
13,5 0,506 128 3,120  
14,0 0,498 121 3,080  
14,5 0,492 113 3,044  
15,0 0,489 106 3,014  
15,5 0,484  
16,0 0,485  
16,5 0,485  
17,0 0,485  
17,5 0,487  
18,0 0,490  
22 0,1039 -13  
16 0,1049 -17  
9
3
-4  
0,1064 -21  
0,1078 -26  
0,1093 -30  
13,8  
13,3  
12,9  
12,5  
12,2  
12,0  
11,8  
11,6  
11,5  
11,4  
11,4  
11,5  
11,6  
-10 0,1105 -35  
-17 0,1116 -39  
-24 0,1126 -44  
-30 0,1137 -49  
-37 0,1151 -54  
-44 0,1160 -59  
-51 0,1171 -65  
-58 0,1185 -71  
-65 0,1197 -77  
-71 0,1206 -82  
-77 0,1215 -87  
-81 0,1230 -90  
98  
91  
83  
75  
69  
64  
2,990  
2,967  
2,945  
2,947  
2,961  
2,979  
Semiconductor Group  
6 of 9  
Draft D, Jul. 98  
CFY67  
Typical Common Source Noise-Parameters  
CFY67-08: VDS = 2 V, ID = 15 mA, Zo = 50 Ω  
f
NFmin  
Rn  
|Γopt|  
<Γopt  
[GHz]  
1
[dB]  
0,29  
0,30  
0,34  
0,38  
0,41  
0,46  
0,50  
0,55  
0,60  
0,64  
0,69  
0,73  
0,78  
0,84  
0,88  
0,93  
0,99  
1,05  
[magn] [angle]  
[Ω]  
15,60  
14,65  
13,56  
12,10  
10,53  
8,86  
7,16  
5,62  
4,29  
3,23  
2,53  
2,22  
2,37  
2,96  
4,01  
5,47  
7,26  
9,61  
0,756  
0,690  
0,643  
0,606  
0,578  
0,553  
0,534  
0,518  
0,505  
0,495  
0,486  
0,476  
0,467  
0,455  
0,443  
0,428  
0,412  
0,394  
14  
28  
43  
58  
73  
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
87  
102  
116  
131  
145  
159  
173  
-173  
-160  
-146  
-132  
-118  
-103  
Semiconductor Group  
7 of 9  
Draft D, Jul. 98  
CFY67  
Order Instructions:  
Full type variant including quality level must be specified by the orderer. For HiRel Discrete  
and Microwave Semiconductors the ordering code specifies device family and quality level  
only.  
Ordering Form:  
Ordering Code: Q..........  
CFY67 -(nnl) (ql)  
-(nnl)  
Noise Figure/Gain and/or Power Level  
Quality Level  
(ql):  
Ordering Example:  
Ordering Code: Q62702F1698  
CFY67-08P ES  
For CFY67, Noise Figure/Gain/Power Level 08P:  
NF < 0.8 dB, Ga > 11.0 dB, P1dB > 10 dBm @ 12 GHz  
in ESA Space Quality Level  
Further Informations:  
See our WWW-Pages:  
- Discrete and RF-Semiconductors (Small Signal Semiconductors)  
www.siemens.de/semiconductor/products/35/35.htm  
- HiRel Discrete and Microwave Semiconductors  
www.siemens.de/semiconductor/products/35/353.htm  
Please contact also our marketing division :  
Tel.:  
++89 6362 4480  
Fax.:  
++89 6362 5568  
e-mail:  
Address:  
martin.wimmers@siemens-scg.com  
Siemens Semiconductors,  
High Frequency Products Marketing,  
P.O.Box 801709,  
D-81617 Munich  
Semiconductor Group  
8 of 9  
Draft D, Jul. 98  
CFY67  
Micro-X Package  
Published by Siemens Semiconductors, High Frequency  
Products Marketing, P.O.Box 801709, D-81617 Munich.  
Siemens AG 1998. All Rights Reserved.  
As far as patents or other rights of third parties are  
concerned, liability is only assumed for components per se,  
not for applications, processes and circuits implemented  
within components or assemblies.  
The information describes the type of component and shall  
not be considered as assured characteristics.  
Terms of delivery and rights to change design reserved.  
For questions on technology, delivery and prices please  
contact the Offices of Semiconductor Group in Germany or  
the Siemens Companies and Representatives woldwide  
(see address list).  
Due to technical requirements components may contain  
dangerous substances. For information on the type in  
question please contact your nearest Siemens Office,  
Semiconductor Group.  
Siemens Semiconductors is a certified CECC and QS9000  
manufacturer (this includes ISO 9000).  
Semiconductor Group  
9 of 9  
Draft D, Jul. 98  

相关型号：

CFY67-08

 HiRel K-Band GaAs Super Low Noise HEMT
INFINEON

CFY67-08ES

 RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4
INFINEON

CFY67-08H

 RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4
INFINEON

CFY67-08P

 HiRel K-Band GaAs Super Low Noise HEMT
INFINEON

CFY67-08PES

 RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4
INFINEON

CFY67-08PH

 RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4
INFINEON

CFY67-08PP

 RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4
INFINEON

CFY67-08PS

 暂无描述
INFINEON

CFY67-10

 HiRel K-Band GaAs Super Low Noise HEMT
INFINEON

CFY67-10ES

 RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4
INFINEON

CFY67-10H

 RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, MICROX-4
INFINEON

CFY67-10P

 HiRel K-Band GaAs Super Low Noise HEMT
INFINEON
©2020 ICPDF网 联系我们和版权申明