CPU165MFPBF [INFINEON]
Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel,;
| 型号： | CPU165MFPBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, 局域网 栅 功率控制 晶体管 |
| 文件： | 总8页 (文件大小：396K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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PD - 5.028
CPU165MF
IGBT SIP MODULE
Fast IGBT
Features
1,2
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
• Optimized for medium operating frequency (1 to 10kHz)
See Fig. 1 for Current vs. Frequency curve
Q1
Q2
D1
D2
4
5
6,7
9
Product Summary
Output Current in a Typical 5.0 kHz Motor Drive
11,12
14 ARMS with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 80% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
IMS-1
Absolute Maximum Ratings
Parameter
Collector-to-Emitter Voltage
Max.
600
Units
V
VCES
IC @ TC = 25°C
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
42
IC @ TC = 100°C
23
ICM
120
A
ILM
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
120
IF @ TC = 100°C
15
IFM
120
VGE
±20
V
VRMS
W
VISOL
Isolation Voltage, any terminal to case, 1 min.
Maximum Power Dissipation, each IGBT
2500
83
PD @ TC = 25°C
PD @ TC = 100°C Maximum Power Dissipation, each IGBT
33
TJ
Operating Junction and
-40 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
°C
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55-0.8 N•m)
Thermal Resistance
Parameter
Typ.
—
Max.
Units
R
R
R
θJC (IGBT)
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
1.5
2.0
—
θJC (DIODE)
θCS (MODULE)
—
°C/W
0.1
Wt
Weight of module
20 (0.7)
—
g (oz)
Revision 1
C-133
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CPU165MF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
—
—
—
—
3.0
—
21
—
—
—
—
—
—
—
—
V
∆V(BR)CES/∆TJ Temp. Coeff. of Breakdown Voltage
0.62
V/°C VGE = 0V, IC = 1.0mA
IC = 23A
VCE(on)
Collector-to-Emitter Saturation Voltage
1.3 1.5
VGE = 15V
1.7
1.4
—
—
—
V
IC = 42A
See Fig. 2, 5
IC = 23A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
5.5
—
∆VGE(th)/∆TJ Temp. Coeff. of Threshold Voltage
-14
30
—
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
—
S
VCE = 100V, IC = 39A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
250
6500
µA
—
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
IGES
Diode Forward Voltage Drop
1.3 1.7
1.2 1.5
V
IC = 25A
See Fig. 13
IC = 25A, TJ = 150°C
VGE = ±20V
Gate-to-Emitter Leakage Current
—
±500 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
84 100
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
IC = 39A
Qge
Qgc
td(on)
tr
20
51
24
50
25
67
—
—
nC
VCC = 400V
See Fig. 8
TJ = 25°C
ns
IC = 39A, VCC = 480V
td(off)
tf
Turn-Off Delay Time
Fall Time
270 540
210 360
VGE = 15V, RG = 5.0Ω
Energy losses include "tail" and
diode reverse recovery
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
1.1
2.1
—
—
mJ See Fig. 9, 10, 11, 18
3.2 5.4
td(on)
tr
td(off)
tf
25
49
—
—
—
—
—
—
—
—
75
TJ = 150°C,
See Fig. 9, 10, 11, 18
ns
IC = 39A, VCC = 480V
VGE = 15V, RG = 5.0Ω
Energy losses include "tail" and
Turn-Off Delay Time
Fall Time
440
410
5.8
3000
340
40
Ets
Total Switching Loss
Input Capacitance
mJ diode reverse recovery
VGE = 0V
Cies
Coes
Cres
trr
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
pF
ns
A
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
50
TJ = 25°C See Fig.
105 160
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C 15
TJ = 25°C See Fig.
TJ = 125°C 16
A/µs TJ = 25°C See Fig.
TJ = 125°C 17
14
IF = 25A
Irr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
4.5
8.0
10
15
VR = 200V
Qrr
112 375
420 1200
nC
di/dt = 200A/µs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
250
160
—
—
Notes:
Repetitive rating; VGE=20V, pulse width
limited by max. junction temperature.
( See fig. 20 )
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 5.0Ω, ( See fig. 19 )
Pulse width 5.0µs,
single shot.
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-134
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CPU165MF
30
20
10
9.3
6.2
S
3.1
TC= 90°C
TJ = 125°C
Power Factor = 0.8
Modulation Depth = 0.8
VCC = 60% of Rated Voltage
0
0
0.1
1
10
100
f, Frequency (kH z)
Fig. 1 - RMS Current and Output Power, Synthesized Sine Wave
1000
100
10
1000
T
= 25°C
J
T
= 25°C
J
T
= 150°C
J
T
= 150°C
100
10
1
J
V
= 100V
V
= 15V
C C
G E
20µs PULSE W IDTH
5µs PULSE W IDTH
1
5
10
15 20
0.1
1
10
V
, G ate-to-E m itter Voltage (V)
VCE , Collector-to-Emitter Voltage (V)
G E
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
C-135
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CPU165MF
70
60
50
40
30
20
10
0
3.0
2.5
2.0
1.5
1.0
V
= 15V
V
= 15V
G E
G E
80µs P ULSE W IDTH
I
= 78A
C
I
I
= 39A
= 20A
C
C
-60 -40 -20
0
20
40
60
80 1 00 120 140 160
25
50
75
100
125
150
TC , Case Temperature (°C)
T
, Case Temperature (°C)
C
Fig. 5 - Collector-to-Emitter Voltage vs.
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Case Temperature
1
D = 0.50
0.20
0.1
0.10
P
DM
0.05
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
0.02
0.01
N otes:
1 . D uty factor D
=
t
/ t
2
1
2. Pea k T = P
x Z
+ T
C
D M
J
thJC
1
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
C-136
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CPU165MF
7000
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
GE
ies
res
oes
V
I
= 480V
= 39A
C E
C
= C + C
,
C
SHORTED
ge
gc
ce
= C
gc
6000
5000
4000
3000
2000
1000
0
= C + C
ce
gc
C
ies
C
oes
C
res
4
0
1
10
100
0
30
60
90
120
VC E , Collector-to-Emitter Voltage (V)
Q g , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
7.5
7.0
6.5
6.0
5.5
100
10
1
V
V
T
I
= 480V
= 15V
= 25°C
= 39A
R
V
V
= 2.0 Ω
= 15V
= 480V
CC
G E
C
G
GE
CC
C
I
I
= 78A
= 39A
C
C
I
= 20A
C
0
10
20
30
40
50
-60 -40 -20
0
20
40
60
80 100 120 140 1 60
R G , Gate Resistance (
)
T , Case Temperature (°C)
C
Ω
W
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Case Temperature
C-137
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CPU165MF
25
1000
100
10
Ω
R
T
V
V
= 2.0
V
T
= 20V
= 125°C
G
G E
= 150°C
= 480V
= 15V
C
J
CC
G E
20
15
10
5
SAFE OPE RA TING ARE A
1
0
1
10
100
1000
0
20
40
60
80
V
, C olle ctor-to-E m itter V oltage (V )
I
, Collector-to-Em itter Current (A )
CE
C
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
10
1
T = 150°C
J
T = 125°C
J
T = 25°C
J
0.6
1.0
1.4
1.8
2.2
2.6
Forward Voltage Drop - V
(V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
C-138
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CPU165MF
100
10
1
140
120
100
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
I
= 50A
F
I
= 25A
F
I
= 50A
= 25A
80
60
40
20
F
I
I
F
I
= 10A
F
= 10A
F
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 15 - Typical Recovery Current vs. dfi/dt
Fig. 14 - Typical Reverse Recovery vs. dfi/dt
10000
1500
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
1200
900
I
= 50A
I
= 10A
F
F
1000
600
300
0
I
= 25A
F
I
= 25A
F
I
= 10A
I
= 50A
F
F
100
100
100
1000
1000
di /dt - (A/µs)
di /dt - (A/µs)
f
f
Fig. 16 - Typical Stored Charge vs. dfi/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
C-139
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CPU165MF
90% Vge
+Vge
Vce
Same type
device as
D.U.T.
90% Ic
10% Vce
Ic
Ic
5% Ic
430µF
80%
of Vce
td(off)
tf
D.U.T.
t1+5µS
Eoff = Vce ic dt
t1
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
id dt
tx
trr
GATE VOLTAGE D.U.T.
Qrr =
Ic
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
DUT VOLTAGE
AND CURRENT
Vce
Vpk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIODE RECOVERY
WAVEFORMS
5% Vce
tr
td(on)
t2
Vce ie dt
Eon =
t2
t4
Erec = Vd id dt
t3
t1
DIODE REVERSE
t1
RECOVERY ENERGY
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
Refer to Section D for the following:
Appendix D: Section D - page D-6
Fig. 18e - Macro Waveforms for Test Circuit Fig. 18a
Fig. 19 - Clamped Inductive Load Test Circuit
Fig. 20 - Pulsed Collector Current Test Circuit
Package Outline 4 - IMS-1 Package (10 pins) Section D - page D-13
C-140
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