CPV364M4K [INFINEON]
IGBT SIP MODULE; IGBT模块SIP
| 型号： | CPV364M4K |
| 厂家： | 
Infineon |
| 描述： | IGBT SIP MODULE |
| 文件： | 总10页 (文件大小：285K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 5.042
CPV364M4K
PRELIMINARY
Short Circuit Rated UltraFast IGBT
IGBT SIP MODULE
Features
1
• Short Circuit Rated UltraFast: Optimized for high
operating frequencies >5.0 kHz , and Short Circuit
Rated to 10µs @ 125°C, VGE = 15V
• Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
• HEXFREDTM soft ultrafast diodes
D 1
D 2
D 3
D 4
D 5
D 6
Q 1
Q 2
Q 3
Q 4
Q 5
Q 6
3
6
9
4
1 5
1 0
1 6
1 2
1 8
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
7
1 3
1 9
Product Summary
Output Current in a Typical 20 kHz Motor Drive
11 ARMS per phase (3.1 kW total) with TC = 90°C, TJ = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 115% (See Figure 1)
Description
The IGBT technology is the key to International Rectifier's advanced line of
IMS (Insulated Metal Substrate) Power Modules. These modules are more
efficient than comparable bipolar transistor modules, while at the same time
having the simpler gate-drive requirements of the familiar power MOSFET.
This superior technology has now been coupled to a state of the art materials
system that maximizes power throughput with low thermal resistance. This
package is highly suited to motor drive applications and where space is at a
premium.
IMS-2
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
24
IC @ TC = 100°C
13
A
ICM
48
ILM
Clamped Inductive Load Current
Short Circuit Withstand Time
48
9.3
tsc
µs
V
VGE
Gate-to-Emitter Voltage
±20
VISOL
Isolation Voltage, any terminal to case, 1 min
Maximum Power Dissipation, each IGBT
2500
63
VRMS
W
PD @ TC = 25°C
PD @ TC = 100°C Maximum Power Dissipation, each IGBT
25
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
°C
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in ( 0.55-0.8 N•m)
Thermal Resistance
Parameter
Typ.
–––
Max.
2.0
3.0
Units
°C/W
g (oz)
R
R
R
θJC (IGBT)
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
θJC (DIODE)
θCS (MODULE)
–––
0.10
–––
–––
Wt
Weight of module
20 (0.7)
7/18/97
CPV364M4K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage 600 ––– –––
V
VGE = 0V, IC = 250µA
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.63 ––– V/°C VGE = 0V, IC = 1.0mA
VCE(on)
Collector-to-Emitter Saturation Voltage ––– 1.80 2.3
––– 1.80 –––
IC = 13A
VGE = 15V
V
IC = 24A
See Fig. 2, 5
––– 1.56 –––
IC = 13A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
3.0 ––– 6.0
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -13 ––– mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
11
18 –––
S
VCE = 100V, IC = 10A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
––– ––– 250
––– ––– 3500
––– 1.3 1.7
––– 1.2 1.6
µA
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
IGES
Diode Forward Voltage Drop
V
IC = 15A
See Fig. 13
IC = 15A, TJ = 150°C
VGE = ±20V
Gate-to-Emitter Leakage Current
––– ––– ±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
10
110 170
IC = 13A
nC VCC = 400V
VGE = 15V
Qge
Qgc
td(on)
tr
14
49
50
30
21
74
—
—
See Fig.8
TJ = 25°C
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
110 170
91 140
IC = 13A, VCC = 480V
VGE = 15V, RG = 10Ω
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
0.56
0.28
—
—
Energy losses include "tail"
mJ and diode reverse recovery
See Fig. 9,10, 18
0.84 1.1
tsc
—
—
µs
VCC = 360V, TJ = 125°C
VGE = 15V, RG = 10Ω , VCPK < 500V
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
47
30
—
—
—
—
—
—
—
—
—
60
TJ = 150°C,
See Fig. 11,18
IC = 13A, VCC = 480V
VGE = 15V, RG = 10Ω
Energy losses include "tail"
ns
Turn-Off Delay Time
Fall Time
250
150
1.28
7.5
Ets
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ and diode reverse recovery
nH Measured 5mm from package
VGE = 0V
LE
Cies
Coes
Cres
trr
1600
130
55
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
pF
ns
A
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
42
TJ = 25°C See Fig.
TJ = 125°C 14
TJ = 25°C See Fig.
TJ = 125°C 15
nC TJ = 25°C See Fig.
TJ = 125°C 16
A/µs TJ = 25°C See Fig.
TJ = 125°C 17
74 120
4.0 6.0
IF = 15A
Irr
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
6.5
10
VR = 200V
Qrr
80 180
220 600
di/dt = 200Aµs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
188
160
—
—
CPV364M4K
5.27
18
16
14
12
10
8
T c = 9 0°C
T j = 1 25 °C
P ow er F ac tor = 0 .8
M o d ula tio n D ep th = 1 .15
V cc = 50 % o f R a ted Vo lta g e
4.68
4.10
3.51
2.93
2.34
1.76
1.17
6
4
2
0.59
0.00
0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
10
1
100
°
T = 150 C
J
°
T = 150 C
J
10
°
T = 25 C
J
°
T = 25 C
J
V
= 15V
GE
V
= 50V
CC
20µs PULSE WIDTH
5µs PULSE WIDTH
1
1
10
5
6
7
8
9
10
V
, Collector-to-Emitter Voltage (V)
CE
V , Gate-to-Emitter Voltage (V)
GE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
CPV364M4K
2 5
4.0
3.0
2.0
1.0
V
= 15V
GE
V
GE
= 15V
80 us PULSE WIDTH
2 0
1 5
1 0
5
I = 26A
C
I = 13A
C
I = 6.5A
C
A
0
-60 -40 -20
0
20 40 60 80 100 120 140 160
2 5
5 0
7 5
1 0 0
1 2 5
1 5 0
°
, Junction Temperature ( C)
T
T
, Case Te m peratu re (°C)
J
C
Fig. 4 - Maximum Collector Current vs.
Fig. 5 - Typical Collector-to-Emitter Voltage
Case Temperature
vs. Junction Temperature
10
D = 0.50
0.20
1
0.10
0.05
P
D M
0 .1
t
1
0.02
0.01
t
2
SINGLE PULSE
(TH ERMAL RESPONSE)
Notes:
1. D uty factor D
=
t
/ t
1
2
2. Pea k T = P
x Z
+ T
C
D M
J
thJC
1
0.01
0.0000 1
0.0001
0.001
0 .01
0 .1
10
t
, R e ctan gu la r P uls e D ura tio n (se c )
1
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
CPV364M4K
3000
2500
2000
1500
1000
500
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ce
V
I
C
= 400V
= 13A
GE
CC
C
= C + C
ies
ge
gc ,
C
= C
res
gc
C
= C + C
oes
ce
gc
C
ies
4
C
oes
res
C
0
0
0
20
40
60
80
100
120
1
10
100
Q
, Total Gate Charge (nC)
V
, Collector-to-Emitter Voltage (V)
G
CE
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
1.5
1.0
0.5
10
V
V
T
= 480V
10Ω
= 15V
= 480V
R
=
CC
GE
J
G
= 15V
= 25
V
GE
°
C
V
CC
I
= 13A
C
I = 26A
C
I = 13A
C
1
I = 6.5A
C
0.1
0
10
20
30
40
50
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
R,GateResistance(Ω)
T , Junction Temperature ( C )
G
J
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
CPV364M4K
4.0
1 0 0 0
1 0 0
1 0
10Ω
=
R
G
V
T
= 20V
= 125°C
GE
J
°
T
= 150 C
J
V
V
GE
= 480V
= 15V
CC
3.0
2.0
1.0
0.0
S AFE OP ER ATING AR EA
A
1
0
5
10
15
20
25
30
1
1 0
1 0 0
1 0 0 0
I
, Collector-to-emitter Current (A)
C
V
C E
, Collector-to -Em itter Voltage (V)
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
100
10
T
T
T
= 150°C
= 125°C
J
J
J
=
25°C
1
0.8
1.2
1.6
2.0
2.4
F orwa rd Volta ge Drop - V
(V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
CPV364M4K
100
10
1
100
VR = 200 V
TJ = 125 °C
TJ = 25°C
V
T
T
= 200V
= 125°C
= 25°C
R
J
J
80
I
= 30A
F
I
= 30A
F
I
= 15A
F
60
I
= 15A
F
I
= 5.0A
F
40
I
= 5.0A
F
20
100
1000
100
1000
di /dt - (A/µs)
di /dt - (A/µs)
f
f
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
800
1000
VR = 200 V
TJ = 125 °C
TJ = 25°C
VR = 200 V
TJ = 1 25 °C
TJ = 2 5°C
600
I
= 30A
F
I
= 5.0A
F
400
200
0
I
= 15A
F
I
= 15A
F
I
= 30A
F
I
= 5.0A
F
100
100
100
1000
1000
di /d t - (A/µs )
d i /dt - (A/µs)
f
f
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
CPV364M4K
90% Vge
+Vg e
Same type
device as
D.U.T.
Vce
90% Ic
10 % Vce
Ic
Ic
5% Ic
430µF
80%
of Vce
D.U.T.
td (off)
tf
t1 +5µ S
Eoff =
Vce ic d t
t1
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
id dt
tx
trr
G ATE VO LTAGE D .U .T.
Qrr =
Ic
1 0% +Vg
+Vg
tx
10 % Irr
10% Vcc
Vcc
DUT VOLTAGE
AN D C URR ENT
Vce
Vpk
Irr
10% Ic
Vcc
Ipk
9 0% Ic
Ic
DIODE RECOVERY
W AVEFORM S
5% Vce
td(on)
tr
t2
Eon = Vce ie dt
t1
t4
Erec =
Vd id d t
t3
DIOD E REVERSE
REC OVER Y EN ER GY
t1
t2
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
CPV364M4K
Vg
GATE SIGN AL
DEVICE UNDER TEST
CURR EN T D .U .T.
VOL TAGE IN D.U.T.
CURR EN T IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
480V
4 X IC @25°C
D.U.T.
L
RL=
10 00V
V *
c
0 - 480V
50V
60 00µF
100 V
Figure 20. Pulsed Collector Current
Figure 19. Clamped Inductive Load Test
Test Circuit
Circuit
CPV364M4K
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
VCC=80%(VCES), VGE=20V, L=10µH, RG = 10Ω (Figure 19)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Case Outline IMS-2
62.43 (2.458)
53.85 (2.120)
7.87 (.310)
5.46 (.215)
3.91 (.154)
2X
NOTES:
1. Tolerance unless otherwise
specified ± 0.254 (.010).
2. Controlling D imension: Inch.
3. Dimensions are shown in
Millimeter (Inches).
21.97 (.865)
4. Term inal numbers are shown
for reference only.
1
2
3
4
5
6
7
8
9
10 1 1 1 2 13 14 1 5 1 6 17 18 19
0.38 (.015)
3.94 (.155)
1.27 (.050)
3.05 ± 0.38
(.120 ± .015)
1.27 (.050)
13X
4.06 ± 0.51
(.160 ± .020)
2.54 (.100)
6X
0.76 (.030)
13X
0.51 (.020)
5.08 (.200)
6X
6.10 (.240)
IMS-2 Package Outline (13 Pins)
D im ens ion s in M illim ete rs and (Inc he s)
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http://www.irf.com/
Data and specifications subject to change without notice.
7/97
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