DDB6U100N14R [INFINEON]
Bridge Rectifier Diode, 100A, 1400V V(RRM),;
| 型号： | DDB6U100N14R |
| 厂家： | 
Infineon |
| 描述： | Bridge Rectifier Diode, 100A, 1400V V(RRM), 局域网 二极管 |
| 文件： | 总3页 (文件大小：181K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
European Power-
Semiconductor and
Electronics Company
GmbH + Co. KG
Marketing Information
DD B6U 100 N 10...16..R
(ECONO)
80
104,8
80
70,4
60,96
15,24
5,5
N-
R
P+
N-
P+
S
T
3,81
11,43
57,15
93±0,2
max. 107,5
P+ 13
P+ 16
R
S
T
1-4
5-8
9-12
N- 14
N- 17
VWK Sep. 1996
DD B6U 100 N 10...16..R (ECONO)
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
Stoßspitzensperrspannung
non-repetitive peak reverse voltage
Durchlaßstrom-Grenzeffektivwert (pro Element)
RMS forward current (per chip)
Ausgangsstrom
Tvj = - 40°C...Tvj max
Tvj = + 25°C...Tvj max
VRRM
VRSM
IFRMSM
Id
1000, 1200
1400, 1600
1100, 1300
1500, 1700
60
V
V
V
V
A
TC = 100°C
100
A
output current
TC = 97°C
104
58
75
A
A
A
A
TA = 45°C, KP 0,5 S
TA = 45°C, KP 0,33 S
TA = 35°C, KP 0,41 S (VL = 45l/s)
104
TA = 35°C, KP 0,33 S (VL = 90l/s)
Tvj = 25°C, tp = 10ms
104
650
550
2100 A²s
1500 A²s
A
A
A
IFSM
I²t
Stoßstrom-Grenzwert
surge forward current
Grenzlastintegral
I²t-value
Tvj = Tvj max, tp = 10ms
Tvj = 25°C, tp = 10ms
Tvj = Tvj max, tp = 10ms
Charakteristische Werte / Characteristic values
Tvj = Tvj max, iF = 100A
Tvj = Tvj max
vF
V(TO)
rT
iR
VISOL
Durchlaßspannung
Schleusenspannung
Ersatzwiderstand
Sperrstrom
forward voltage
max. 1,55
V
V
m
threshold voltage
forward slope resistance
reverse current
0,75
5,5
5
Tvj = Tvj max
Tvj = Tvj max, vR = VRRM
RMS, f = 50Hz, t = 1min
max.
mA
Isolations-Prüfspannung
2,5 kV
insulation test voltage
RMS, f = 50Hz, t = 1sec
3,0 kV
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
pro Modul / per module, = 120°rect
RthJC
max. 0,191 °C/W
thermal resistance, junction to case
pro Element / per chip, = 120°rect
pro Modul / per module, DC
max. 1,150 °C/W
max. 0,147 °C/W
pro Element / per chip, DC
pro Modul / per module
max. 0,880 °C/W
max. 0,033 °C/W
RthCK
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Element / per chip
max. 0,200 °C/W
150 °C
- 40...+150 °C
- 40...+150 °C
Tvj max
Tc op
Tstg
Höchstzul. Sperrschichttemp.
Betriebstemperatur
max. junction temperature
operating temperature
storage temperature
Lagertemperatur
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see appendix
Si-Elemente mit Lötkontakt, glaspassiviert
Si-pellets with soldered contact, glass-passivated
Al2O3
Innere Isolation
internal insulation
Anzugsdrehm.f.mech.Befestig.
Gewicht
mounting torque
weight
Toleranz / tolerance ±15%
M1
G
4
Nm
g
typ.
185
Kriechstrecke
creepage distance
vibration resistance
12,5 mm
50 m/s²
Schwingfestigkeit
Kühlkörper / heatsinks :
eupec GmbH + Co. KG; Max-Planck-Str. 5; D-59581 Warstein; Tel: +49 2902 764-0; Fax: ...-252
Terms & Conditions of Usage
Attention
The present product data is exclusively subscribed to technically experienced
staff. This Data Sheet is describing the specification of the products for which a
warranty is granted exclusively pursuant the terms and conditions of the supply
agreement. There will be no guarantee of any kind for the product and its
specifications. Changes to the Data Sheet are reserved.
You and your technical departments will have to evaluate the suitability of the
product for the intended application and the completeness of the product data
with respect to such application. Should you require product information in
excess of the data given in the Data Sheet, please contact your local Sales Office
via “www.eupec.com / sales & contact”.
Warning
Due to technical requirements the products may contain dangerous substances.
For information on the types in question please contact your local Sales Office via
“www.eupec.com / sales & contact”.
相关型号：
DDB6U100N16RRBOSA1
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, MODULE-17
INFINEON
DDB6U134N16RRB11BPSA1
Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, MODULE-19
INFINEON
DDB6U134N16RR_B11
eupec™ EconoBRIDGE™ - 1600V 二极管桥模块，采用制动斩波器、NTC 温度检测和 PressFIT 压接技术，实现更紧凑的转换器设计。
INFINEON
©2020 ICPDF网 联系我们和版权申明