ESD5V3S1B02LRHE6327XTSA1 [INFINEON]
Trans Voltage Suppressor Diode, 80W, 5.3V V(RWM), Bidirectional, 1 Element, Silicon, 1.00 X 0.60 MM, 0.40 MM HEIGHT, ROHS COMPLIANT, TSLP-2-17, 2 PIN;
| 型号： | ESD5V3S1B02LRHE6327XTSA1 |
| 厂家： | 
Infineon |
| 描述： | Trans Voltage Suppressor Diode, 80W, 5.3V V(RWM), Bidirectional, 1 Element, Silicon, 1.00 X 0.60 MM, 0.40 MM HEIGHT, ROHS COMPLIANT, TSLP-2-17, 2 PIN 局域网 二极管 |
| 文件： | 总7页 (文件大小：559K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ESD5V3S1B-02LRH
Silicon TVS Diode
• ESD / transient protection of data and power lines
in low voltage applications according to:
IEC61000-4-2 (ESD): ± ±25 kV (air) 20 kV (contact)
IEC61000-4-4 (EFT): 50 A / 2.5 kV (5/50 ns)
IEC61000-4-5 (surge): 5.5 A / 80 W (8/20 µs)
• Small form factor (0402 inch):
3
1.0 x 0.6 x 0.4 mm
•±Bi-directional, symmetrical
working voltage up to ± 5.3 V
• Ultralow and symmetric clamping voltage
• Ultralow dynamic resistance 0.4 Ω
• Very fast response time
• Pb-free (RoHS compliant) package
Applications
Recommended to protect audio lines /
microphone lines / speaker and
headset systems in:
• Mobile phones
• Mobile TV
• Set top boxes
• MP3 players
• Minidisc players
• Portable entertainment electronics
ESD5V3S1B-02LRH
1
2
Type
ESD5V3S1B-02LRH
Package
TSLP-2-17
Configuration
1 line, bi-directional
Marking
E1
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1
ESD5V3S1B-02LRH
Maximum Ratings at T = 25°C, unless otherwise specified
Parameter
ESD air / contact discharge
Peak pulse current (t = 8 / 20 µs)
Symbol
Value
25 / 20
5.5
Unit
kV
A
1)
V
ESD
2)
2)
I
p
pp
80
W
Peak pulse power (t = 8 / 20 µs
P
p
pk
°C
Operating temperature range
Storage temperature
T
-55...125
-65...150
T
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
Characteristics
-5.3
6
-
-
5.3
-
V
Reverse working voltage
Breakdown voltage
V
V
RWM
(BR)
I
= 1 mA
(BR)
-
-
0.1 µA
Reverse current
I
R
V = 3.3 V
R
V
10
12
Clamping voltage
V
CL
2)
I
= 1 A, t = 8/20 µs
-
-
-
8
10
11
PP
p
2)
2)
I
= 3.5 A, t = 8/20 µs
PP
p
I
= 5.5 A, t = 8/20 µs
13
PP
p
pF
Diode capacitance
V = 0 V, f = 1 MHz
C
R
T
-
-
17.5
14.5
20
-
R
V = 2.5 V, f = 1 MHz
R
3)
Dynamic resistance (t = 30 ns)
-
0.4
-
Ω
D
1
V
according to IEC61000-4-2
according to IEC61000-4-5
ESD
2
3
I
pp
according to TLP tests
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2
ESD5V3S1B-02LRH
Power derating curve P = ƒ (T )
Clamping voltage, V = ƒ(I )
cl pp
pk
A
t = 8 / 20 µs
p
14
V
110
%
90
80
70
60
50
40
30
20
10
0
12
11
10
9
8
7
6
°C
A
0
25
50
75
100
150
0
1
2
3
4
6
T
I
pp
A
Reverse current I = ƒ (T )
Breakdown voltage V = ƒ(T )
BR A
R
A
V = 3.3 V
I = 1 mA
R
R
10 -6
A
8
V
7.5
7.25
7
10 -7
10 -8
10 -9
6.75
6.5
6.25
6
°C
°C
-75 -50 -25
0
25 50 75 100
150
-75 -50 -25
0
25 50 75 100
150
T
T
A
A
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ESD5V3S1B-02LRH
Diode capacitance C = ı(V )
T
R
f = 1MHz
20
pF
16
14
12
10
8
6
4
2
0
0
V
1
2
3
4
6
V
R
2011-06-15
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ESD5V3S1B-02LRH
Application example
single channel, bi-directional
Protected signal line
2
ESD
sensitive
device
I/O
The protection diode should be placed
very close to the location where the ESD
or other transients can occur to keep
loops and inductances as small as
possible.
Pin 1 (or pin 2) should be connected
directly to a ground plane on the board.
1
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5
TSLP-2-17 (mm)
ESD5V3S1B-02LRH
Package Outline
Top view
Bottom view
+±0±1
-±0±ꢁ
±0ꢁ9
±±0±ꢀ
±06
±0±ꢀ MAX0
2
2
1
1
1)
±±0±ꢁꢀ
±0ꢀ
Cathode
marking
1) Dimension applies to plated terminal
Foot Print
For board assembly information please refer to Infineon website "Packages"
±06
±04ꢀ
Copper
Solder mask
Stencil apertures
Marking Layout (Example)
BAR9±-±2LRH
Type code
Cathode marking
Laser marking
Standard Packing
Reel ø18± mm = 1ꢀ0±±± Pieces/Reel
Reel øꢁꢁ± mm = ꢀ±0±±± Pieces/Reel (optional)
±0ꢀ
4
±076
Cathode
marking
2011-06-15
6
ESD5V3S1B-02LRH
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
±
±2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
2011-06-15
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