F4-75R07W1H3_B11A [INFINEON]
Insulated Gate Bipolar Transistor;
| 型号： | F4-75R07W1H3_B11A |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor 栅 |
| 文件： | 总10页 (文件大小：1086K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
F4-75R07W1H3_B11A
EasyPACKꢀ模块ꢀ带有pressfit压接管脚和温度检测NTC
EasyPACKꢀmoduleꢀandꢀPressFITꢀ/ꢀNTC
J
VCES = 650V
IC nom = 37,5A / ICRM = 75A
典型应用
TypicalꢀApplications
• 汽车应用
• AutomotiveꢀApplications
• HighꢀFrequencyꢀSwitchingꢀApplication
• DC/DCꢀconverter
• 高频开关应用
• zh
• 辅助逆变器
• 混合动力汽车
• 感应加热和电焊机
• AuxiliaryꢀInverters
• HybridꢀElectricalꢀVehiclesꢀ(H)EV
• InductiveꢀHeatingꢀandꢀWelding
电气特性
ElectricalꢀFeatures
• 增加阻断电压至650V
• 高速IGBTꢀH3
• 低电感设计
• Increasedꢀblockingꢀvoltageꢀcapabilityꢀtoꢀ650V
• HighꢀSpeedꢀIGBTꢀH3
• Lowꢀinductiveꢀdesign
• 低开关损耗
• LowꢀSwitchingꢀLosses
机械特性
MechanicalꢀFeatures
• 2.5ꢀkVꢀ交流ꢀꢀ1分钟ꢀꢀꢀ绝缘
• 高爬电距离和电气间隙
• 集成NTC温度传感器
• PressFITꢀ压接技术
• 符合RoHS
• 2.5ꢀkVꢀACꢀ1minꢀInsulation
• HighꢀCreepageꢀandꢀClearanceꢀDistances
• IntegratedꢀNTCꢀtemperatureꢀsensor
• PressFITꢀContactꢀTechnology
• RoHSꢀcompliant
• 集成的安装夹使安装坚固
• Rugged mounting due to integrated mounting
clamps
ModuleꢀLabelꢀCode
BarcodeꢀCodeꢀ128
ContentꢀofꢀtheꢀCode
ModuleꢀSerialꢀNumber
Digit
1ꢀ-ꢀꢀꢀ5
ModuleꢀMaterialꢀNumber
ProductionꢀOrderꢀNumber
Datecodeꢀ(ProductionꢀYear)
Datecodeꢀ(ProductionꢀWeek)
6ꢀ-ꢀ11
12ꢀ-ꢀ19
20ꢀ-ꢀ21
22ꢀ-ꢀ23
DMXꢀ-ꢀCode
preparedꢀby:ꢀAS
approvedꢀby:ꢀTR
dateꢀofꢀpublication:ꢀ2014-03-05
revision:ꢀ3.0
ULꢀapprovedꢀ(E83335)
1
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
F4-75R07W1H3_B11A
IGBT,ꢀ逆变器ꢀ/ꢀIGBT,Inverter
最大额定值ꢀ/ꢀMaximumꢀRatedꢀValues
集电极－发射极电压
Tvj = 25°C
VCES
ICN
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
650
75
ꢀ
ꢀ
ꢀ
ꢀ
V
A
A
A
Collector-emitterꢀvoltage
集电极电流
Implementedꢀcollectorꢀcurrent
连续集电极直流电流
ContinuousꢀDCꢀcollectorꢀcurrent
TC = 105°C, Tvj max = 175°C
tP = 1 ms
IC nom
ICRM
Ptot
37,5
150
275
+/-20
集电极重复峰值电流
Repetitiveꢀpeakꢀcollectorꢀcurrent
总功率损耗
Totalꢀpowerꢀdissipation
TC = 25°C, Tvj max = 175°C
ꢀ W
栅极－发射极峰值电压
Gate-emitterꢀpeakꢀvoltage
VGES
ꢀ
V
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
集电极－发射极饱和电压
Collector-emitterꢀsaturationꢀvoltage
IC = 37,5 A, VGE = 15 V
IC = 37,5 A, VGE = 15 V
IC = 37,5 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1,50 1,85
1,55
1,60
V
V
V
VCE sat
栅极阈值电压
Gateꢀthresholdꢀvoltage
IC = 1,20 mA, VCE = VGE, Tvj = 25°C
VGE = -15 V ... +15 V
VGEth
QG
4,9
5,8
0,80
0,0
6,5
V
µC
Ω
栅极电荷
Gateꢀcharge
内部栅极电阻
Internalꢀgateꢀresistor
Tvj = 25°C
RGint
Cies
Cres
ICES
IGES
td on
输入电容
Inputꢀcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
VCE = 650 V, VGE = 0 V, Tvj = 25°C
VCE = 0 V, VGE = 20 V, Tvj = 25°C
4,70
0,14
nF
nF
反向传输电容
Reverseꢀtransferꢀcapacitance
集电极-发射极截止电流
Collector-emitterꢀcut-offꢀcurrent
0,05 mA
400 nA
栅极-发射极漏电流
Gate-emitterꢀleakageꢀcurrent
开通延迟时间(电感负载)
Turn-onꢀdelayꢀtime,ꢀinductiveꢀload
IC = 37,5 A, VCE = 300 V
VGE = ±15 V
RGon = 4,3 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,019
0,019
0,02
µs
µs
µs
上升时间(电感负载)
Riseꢀtime,ꢀinductiveꢀload
IC = 37,5 A, VCE = 300 V
VGE = ±15 V
RGon = 4,3 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,011
0,012
0,012
µs
µs
µs
tr
td off
tf
关断延迟时间(电感负载)
Turn-offꢀdelayꢀtime,ꢀinductiveꢀload
IC = 37,5 A, VCE = 300 V
VGE = ±15 V
RGoff = 4,3 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,16
0,19
0,20
µs
µs
µs
下降时间(电感负载)
Fallꢀtime,ꢀinductiveꢀload
IC = 37,5 A, VCE = 300 V
VGE = ±15 V
RGoff = 4,3 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
0,006
0,012
0,013
µs
µs
µs
开通损耗能量ꢀ(每脉冲)
Turn-onꢀenergyꢀlossꢀperꢀpulse
IC = 37,5 A, VCE = 300 V, LS = 25 nH
VGE = ±15 V, di/dt = 3100 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 4,3 Ω
Tvj = 25°C
0,23
0,36
0,40
mJ
mJ
mJ
Eon
Eoff
Tvj = 150°C
关断损耗能量ꢀ(每脉冲）
Turn-offꢀenergyꢀlossꢀperꢀpulse
IC = 37,5 A, VCE = 300 V, LS = 25 nH
VGE = ±15 V, du/dt = 5000 V/µs (Tvj = 150°C)Tvj = 125°C
RGoff = 4,3 Ω
Tvj = 25°C
0,33
0,51
0,58
mJ
mJ
mJ
Tvj = 150°C
短路数据
SCꢀdata
VGE ≤ 15 V, VCC = 360 V
VCEmax = VCES -LsCE ·di/dt
ISC
tP ≤ 4 µs, Tvj = 150°C
430
A
结－外壳热阻
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase
每个ꢀIGBTꢀ/ꢀperꢀIGBT
RthJC
0,45 0,55 K/W
preparedꢀby:ꢀAS
approvedꢀby:ꢀTR
dateꢀofꢀpublication:ꢀ2014-03-05
revision:ꢀ3.0
2
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
F4-75R07W1H3_B11A
外壳－散热器热阻
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
每个ꢀIGBTꢀ/ꢀperꢀIGBT
λPasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)
RthCH
Tvj op
0,65
K/W
°C
在开关状态下温度
Temperatureꢀunderꢀswitchingꢀconditions
-40
150
二极管,逆变器ꢀ/ꢀDiode,ꢀInverter
最大额定值ꢀ/ꢀMaximumꢀRatedꢀValues
反向重复峰值电压
Tvj = 25°C
VRRM
IF
IFRM
I²t
ꢀ
ꢀ
ꢀ
ꢀ
650
25
ꢀ
ꢀ
ꢀ
V
A
A
Repetitiveꢀpeakꢀreverseꢀvoltage
连续正向直流电流
ContinuousꢀDCꢀforwardꢀcurrent
正向重复峰值电流
Repetitiveꢀpeakꢀforwardꢀcurrent
tP = 1 ms
50
I2t-值
I²tꢀ-ꢀvalue
VR = 0 V, tP = 10 ms, Tvj = 125°C
50,0
ꢀ A²s
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
正向电压
Forwardꢀvoltage
IF = 25 A, VGE = 0 V
IF = 25 A, VGE = 0 V
IF = 25 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
1,65 2,15
1,60
1,55
V
V
V
VF
IRM
Qr
反向恢复峰值电流
Peakꢀreverseꢀrecoveryꢀcurrent
IF = 25 A, - diF/dt = 3000 A/µs (Tvj=150°C) Tvj = 25°C
VR = 300 V
VGE = -15 V
45,0
48,0
51,0
A
A
A
Tvj = 125°C
Tvj = 150°C
恢复电荷
Recoveredꢀcharge
IF = 25 A, - diF/dt = 3000 A/µs (Tvj=150°C) Tvj = 25°C
VR = 300 V
VGE = -15 V
1,05
1,65
1,90
µC
µC
µC
Tvj = 125°C
Tvj = 150°C
反向恢复损耗（每脉冲）
Reverseꢀrecoveryꢀenergy
IF = 25 A, - diF/dt = 3000 A/µs (Tvj=150°C) Tvj = 25°C
0,25
0,39
0,44
mJ
mJ
mJ
VR = 300 V
VGE = -15 V
Tvj = 125°C
Tvj = 150°C
Erec
结－外壳热阻
Thermalꢀresistance,ꢀjunctionꢀtoꢀcase
每个二极管ꢀ/ꢀperꢀdiode
每个二极管ꢀ/ꢀperꢀdiode
RthJC
RthCH
Tvj op
1,25 1,45 K/W
外壳－散热器热阻
Thermalꢀresistance,ꢀcaseꢀtoꢀheatsink
0,95
K/W
°C
λPasteꢀ=ꢀ1ꢀW/(m·K)ꢀꢀꢀ/ꢀꢀꢀꢀλgreaseꢀ=ꢀ1ꢀW/(m·K)
在开关状态下温度
Temperatureꢀunderꢀswitchingꢀconditions
-40
150
负温度系数热敏电阻ꢀ/ꢀNTC-Thermistor
特征值ꢀ/ꢀCharacteristicꢀValues
min. typ. max.
5,00
额定电阻值
Ratedꢀresistance
TC = 25°C
R25
∆R/R
P25
kΩ
R100ꢀꢀ偏差
DeviationꢀofꢀR100
TC = 100°C, R100 = 493 Ω
-5
5
%
耗散功率
Powerꢀdissipation
TC = 25°C
20,0 mW
B-值
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/50
B25/80
B25/100
3375
3411
3433
K
K
K
B-值
B-value
B-值
B-value
根据应用手册标定
Specificationꢀaccordingꢀtoꢀtheꢀvalidꢀapplicationꢀnote.
preparedꢀby:ꢀAS
approvedꢀby:ꢀTR
dateꢀofꢀpublication:ꢀ2014-03-05
revision:ꢀ3.0
3
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
F4-75R07W1H3_B11A
模块ꢀ/ꢀModule
绝缘测试电压
Isolationꢀtestꢀvoltage
RMS, f = 50 Hz, t = 1 min.
VISOL
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
2,5
ꢀ kV
内部绝缘
Internalꢀisolation
基本绝缘ꢀꢀ(classꢀ1,ꢀIECꢀ61140)
basicꢀinsulationꢀ(classꢀ1,ꢀIECꢀ61140)
impr.Al2O3
ꢀ
爬电距离
Creepageꢀdistance
端子-ꢀ散热片ꢀ/ꢀterminalꢀtoꢀheatsink
端子-ꢀ端子ꢀ/ꢀterminalꢀtoꢀterminal
11,5
6,3
ꢀ mm
ꢀ mm
ꢀ
电气间隙
Clearance
端子-ꢀ散热片ꢀ/ꢀterminalꢀtoꢀheatsink
端子-ꢀ端子ꢀ/ꢀterminalꢀtoꢀterminal
10,0
5,0
相对电痕指数
Comperativeꢀtrackingꢀindex
CTI
> 200
min. typ. max.
杂散电感,模块
Strayꢀinductanceꢀmodule
LsCE
RCC'+EE'
Tstg
15
nH
mΩ
°C
N
模块引线电阻,端子-芯片
Moduleꢀleadꢀresistance,ꢀterminalsꢀ-ꢀchip
TCꢀ=ꢀ25°C,ꢀ每个开关ꢀ/ꢀperꢀswitch
5,50
储存温度
Storageꢀtemperature
-40
20
125
50
Anpresskraft für mech. Bef. pro Feder
mountig force per clamp
F
-
重量
Weight
G
24
g
Der Strom im Dauerbetrieb ist auf 25 A effektiv pro Anschlusspin begrenzt.
The current under continuous operation is limited to 25 A rms per connector pin.
VGE muss im Kurzschluss auf 15V begrenzt werden (z.B. Klemmschaltung).
VGE has to be limited to 15V during shortcircuit (e.g. clamping).
preparedꢀby:ꢀAS
approvedꢀby:ꢀTR
dateꢀofꢀpublication:ꢀ2014-03-05
revision:ꢀ3.0
4
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
F4-75R07W1H3_B11A
输出特性ꢀIGBT,ꢀ逆变器ꢀ（典型)
输出特性ꢀIGBT,ꢀ逆变器ꢀ（典型)
outputꢀcharacteristicꢀIGBT,Inverterꢀ(typical)
outputꢀcharacteristicꢀIGBT,Inverterꢀ(typical)
ICꢀ=ꢀfꢀ(VCE
)
ICꢀ=ꢀfꢀ(VCE)
VGEꢀ=ꢀ15ꢀV
Tvjꢀ=ꢀ150°C
75
70
65
60
55
50
45
40
35
30
25
20
15
10
5
150
140
130
120
110
100
90
Tvj = -40°C
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VGE = 9 V
VGE = 11 V
VGE = 13 V
VGE = 15 V
VGE = 17 V
80
70
60
50
40
30
20
10
0
0
0,0
0,5
1,0
1,5
2,0
2,5
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0
VCE [V]
VCE [V]
传输特性ꢀIGBT,ꢀ逆变器ꢀ(典型)
transferꢀcharacteristicꢀIGBT,Inverterꢀ(typical)
ICꢀ=ꢀfꢀ(VGE
开关损耗ꢀIGBT,ꢀ逆变器ꢀ（典型)
switchingꢀlossesꢀIGBT,Inverterꢀ(typical)
Eonꢀ=ꢀfꢀ(IC),ꢀEoffꢀ=ꢀfꢀ(IC)
)
VCEꢀ=ꢀ20ꢀV
VGEꢀ=ꢀ±15ꢀV,ꢀRGonꢀ=ꢀ4.3ꢀΩ,ꢀRGoffꢀ=ꢀ4.3ꢀΩ,ꢀVCEꢀ=ꢀ300ꢀV
150
1,2
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Eon, Tvj = 25°C
1,1
1,0
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Eon, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 25°C
Eoff, Tvj = 125°C
Eoff, Tvj = 150°C
135
120
105
90
75
60
45
30
15
0
5
6
7
8
9
10
11
12
0
5
10 15 20 25 30 35 40 45 50 55 60 65 70 75
VGE [V]
IC [A]
preparedꢀby:ꢀAS
approvedꢀby:ꢀTR
dateꢀofꢀpublication:ꢀ2014-03-05
revision:ꢀ3.0
5
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
F4-75R07W1H3_B11A
开关损耗ꢀIGBT,ꢀ逆变器ꢀ（典型)
switchingꢀlossesꢀIGBT,Inverterꢀ(typical)
Eonꢀ=ꢀfꢀ(RG),ꢀEoffꢀ=ꢀfꢀ(RG)
瞬态热阻抗ꢀIGBT,ꢀ逆变器ꢀ
transientꢀthermalꢀimpedanceꢀIGBT,Inverterꢀ
ZthJHꢀ=ꢀfꢀ(t)
VGEꢀ=ꢀ±15ꢀV,ꢀICꢀ=ꢀ37.5ꢀA,ꢀVCEꢀ=ꢀ300ꢀV
1,2
10
Eon, Tvj = 25°C
ZthJH : IGBT
1,1
1,0
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Eon, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 25°C
Eoff, Tvj = 125°C
Eoff, Tvj = 150°C
1
i:
1
2
3
4
ri[K/W]: 0,03
0,07 0,4 0,6
τi[s]:
0,0005 0,005 0,05 0,2
0,1
0,001
0
2
4
6
8
10
12
14
0,01
0,1
t [s]
1
10
RG [Ω]
反偏安全工作区ꢀIGBT,ꢀ逆变器ꢀ（RBSOA）
reverseꢀbiasꢀsafeꢀoperatingꢀareaꢀIGBT,Inverterꢀ(RBSOA)
ICꢀ=ꢀfꢀ(VCE
电容特性ꢀIGBT,ꢀ逆变器ꢀ（典型)
capacityꢀcharcteristicꢀIGBT,Inverterꢀ(typical)
Cꢀ=ꢀf(VCE
)
)
VGEꢀ=ꢀ±15ꢀV,ꢀRGoffꢀ=ꢀ4.3ꢀΩ,ꢀTvjꢀ=ꢀ150°C
VGEꢀ=ꢀ0ꢀV,ꢀTvjꢀ=ꢀ25°C,ꢀfꢀ=ꢀ1MHz
160
10000
IC, Modul
IC, Chip
140
120
100
80
60
40
20
0
1000
100
10
Cies
Coes
Cres
0
100
200
300
400
500
600
700
0
50 100 150 200 250 300 350 400 450 500
VCE [V]
VCE [V]
preparedꢀby:ꢀAS
approvedꢀby:ꢀTR
dateꢀofꢀpublication:ꢀ2014-03-05
revision:ꢀ3.0
6
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
F4-75R07W1H3_B11A
栅极电荷特性ꢀIGBT,ꢀ逆变器ꢀ（典型)
gateꢀchargeꢀcharacteristicꢀIGBT,Inverterꢀ(typical)
VGEꢀ=ꢀf(QG)
正向偏压特性ꢀ二极管,逆变器ꢀ（典型)
forwardꢀcharacteristicꢀofꢀDiode,ꢀInverterꢀ(typical)
IFꢀ=ꢀfꢀ(VF)
ICꢀ=ꢀ37.5ꢀA,ꢀTvjꢀ=ꢀ25°C
15
50
VCC = 120V
VCC = 480V
Tvj = -40°C
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
13
45
11
9
7
40
35
30
25
20
15
10
5
5
3
1
-1
-3
-5
-7
-9
-11
-13
-15
0
0,0
0,1
0,2
0,3
0,4
QG [µC]
0,5
0,6
0,7
0,8
0,0
0,5
1,0
1,5
2,0
2,5
VF [V]
开关损耗ꢀ二极管,逆变器ꢀ（典型)
开关损耗ꢀ二极管,逆变器ꢀ（典型)
switchingꢀlossesꢀDiode,ꢀInverterꢀ(typical)
Erecꢀ=ꢀfꢀ(IF)
switchingꢀlossesꢀDiode,ꢀInverterꢀ(typical)
Erecꢀ=ꢀfꢀ(RG)
RGonꢀ=ꢀ4.3ꢀΩ,ꢀVCEꢀ=ꢀ300ꢀV
IFꢀ=ꢀ25ꢀA,ꢀVCEꢀ=ꢀ300ꢀV
0,8
0,8
Erec, Tvj = 25°C
Erec, Tvj = 125°C
Erec, Tvj = 150°C
Erec, Tvj = 25°C
Erec, Tvj = 125°C
Erec, Tvj = 150°C
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0
5
10 15 20 25 30 35 40 45 50
0
2
4
6
8
10
12
14
IF [A]
RG [Ω]
preparedꢀby:ꢀAS
approvedꢀby:ꢀTR
dateꢀofꢀpublication:ꢀ2014-03-05
revision:ꢀ3.0
7
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
F4-75R07W1H3_B11A
瞬态热阻抗ꢀ二极管,逆变器ꢀ
transientꢀthermalꢀimpedanceꢀDiode,ꢀInverterꢀ
ZthJHꢀ=ꢀfꢀ(t)
负温度系数热敏电阻ꢀ温度特性
NTC-Thermistor-temperatureꢀcharacteristicꢀ(typical)
Rꢀ=ꢀfꢀ(T)
10
100000
ZthJH : Diode
Rtyp
10000
1000
100
1
i:
1
2
0,6
3
4
ri[K/W]: 0,2
τi[s]:
0,9 0,5
0,0005 0,005 0,05 0,2
0,1
0,001
0,01
0,1
t [s]
1
10
0
20
40
60
80
TC [°C]
100 120 140 160
preparedꢀby:ꢀAS
approvedꢀby:ꢀTR
dateꢀofꢀpublication:ꢀ2014-03-05
revision:ꢀ3.0
8
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
F4-75R07W1H3_B11A
接线图ꢀ/ꢀcircuit_diagram_headline
J
封装尺寸ꢀ/ꢀpackageꢀoutlines
GYYWW
Infineon
FxxxRxxW1xx
TM
EasyPIM
´
´
´
´
preparedꢀby:ꢀAS
approvedꢀby:ꢀTR
dateꢀofꢀpublication:ꢀ2014-03-05
revision:ꢀ3.0
9
技术信息ꢀ/ꢀTechnicalꢀInformation
IGBT-模块
IGBT-modules
F4-75R07W1H3_B11A
使用条件和条款
ꢀ
使用条件和条款
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preparedꢀby:ꢀAS
approvedꢀby:ꢀTR
dateꢀofꢀpublication:ꢀ2014-03-05
revision:ꢀ3.0
10
相关型号：
F4-75R12KS4_B11
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-24
INFINEON
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