FD200H06A5BPBF [INFINEON]
Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, WAFER;型号: | FD200H06A5BPBF |
厂家: | Infineon |
描述: | Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, WAFER 二极管 |
文件: | 总2页 (文件大小:146K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Preliminary Data Sheet PD-20534 rev. A 06/01
FD200H06A5B
Fred Die in Wafer Form
a
c
0.35 ± 0.01
(0.014 ± 0.0004)
NOTES:
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS
(INCHES).
2. CONTROLLING DIMENSION (INCH):
C
3. DIMENSIONS AND TOLERANCES:
a = 5.080 ± 0.05
A
(0.200 ± 0.002)
b = 5.08 ± 0.05
(0.200 ± 0.002)
c = 4.420 ± 0.003
(0.174 ± 0.0001)
d = 4.420 ± 0.003
(0.174 ± 0.0001)
40 (1.57)
4. LETTER DESIGNATION:
A = Anode (Top Metal)
C = Cathode (Back Metal)
Wafer flat alligned with
side b of the die
5. SAWING:
Recommended Blade
SEMITEC S1025 QS00 Blade
6. MINIMUM ORDER QUANTITY:
300 die
Ø
125 (4.92)
NOT TO SCALE
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1
FD200H06A5B
Preliminary Data Sheet PD-20534 rev. A 06/01
Electrical Characteristics (Wafer Form)
Parameters
Units
TestConditions
VFM
MaximumForwardVoltage
2.3V
600V
100µA
20 ns
TJ = 25°C, I F = 30 A
VRRM MimunumReverseBreakdownVoltage
TJ = 25°C, I RRM = 200 µA
IRM
trr
Max. ReverseLeakageCurrent
Typ. Reverse Recovery Time
TJ = 25°C, V RRM = 600 V
IF = 1A, di/ dt = 100A/µs, VR = 30 V
Mechanical Data
NominalBackMetalComposition, Thickness
Cr - Ni - Ag (1 KA - 2 KA - 3 KA)
99% Al, 1% Si (3 microns)
NominalFrontMetalComposition, Thickness
ChipDimensions
0.200" x 0.200" (see drawing)
0.25mmdiameterminimum
Reject Ink Dot Size
RecommendedStorageEnvironment
Storageinoriginalcontainer, indessicated
nitrogen,withnocontamination
Ordering Information Table
Device Code
FD 200
H
06
A
5
B
1
2
3
4
5
6
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Fred Die
Chip Dimension in Mils:
Process
200 = 200x200 square
H
=
=
=
HyperFast
600V
Voltage code Vrrm (*100) eg: 06
Chip surface metallization:
Wafer diameter in inches
Packaging:
A
Aluminium (anode), Silver (cathode)
B
=
Inked Probed Unsawn Wafer (Wafer in box)
2
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