FF150R12KE3GHOSA1 [INFINEON]

Insulated Gate Bipolar Transistor, 225A I(C), 1200V V(BR)CES, N-Channel, MODULE-7;
FF150R12KE3GHOSA1
型号: FF150R12KE3GHOSA1
厂家: INFINEON TECHNOLOGIES AG    INFINEON TECHNOLOGIES AG
描述:

Insulated Gate Bipolar Transistor, 225A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

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文件: 总8页 (文件大小:387K)
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FF150R12KF

TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 150A I(C) | M:HL093HW048

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50 ETC

FF150R12KF2

TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 150A I(C) | M:HL093HW048

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48 ETC

FF150R12KL

TRANSISTOR | IGBT | N-CHAN | DUAL | 1.2KV V(BR)CES | 150A I(C) | M:HL093HW048

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23 ETC

FF150R12KS4

62mm C-series module with the fast IGBT2 for high-frequency switching

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346 EUPEC

FF150R12KS4

62mm C-Series module with the fast IGBT2 for high-frequency switching

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193 INFINEON

FF150R12KS4_B2

62mm C-Series module with the fast IGBT2 for high-frequency switching

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17 INFINEON

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2 INFINEON

FF150R12KS4B2HOSA1

Insulated Gate Bipolar Transistor

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0 INFINEON

FF150R12KT3G

Insulated Gate Bipolar Transistor, 225A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

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24 INFINEON

FF150R12KT3GHOSA1

Insulated Gate Bipolar Transistor, 225A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

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1 INFINEON

FF150R12ME3G

EconoDUAL module with trench/fieldstop IGBT3 and EmCon High Efficiency diode

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54 INFINEON

FF150R12MS4G

EconoDUAL3 module with fast IGBT2 for high switching frequency

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41 INFINEON

FF150R12MS4GBOSA1

Insulated Gate Bipolar Transistor, 225A I(C), 1200V V(BR)CES, N-Channel, MODULE-11

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0 INFINEON

FF150R12MS4GENG

Insulated Gate Bipolar Transistor,

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0 INFINEON

FF150R12MT4

EconoDUAL?2 Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC

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38 INFINEON