FF450R12KT4 [INFINEON]

62mm C-series module with fast trench/fieldstop IGBT4 and Emitter Controlled diode; 快速沟/场终止IGBT 4和发射极控制二极管62毫米C系列模块
FF450R12KT4
型号: FF450R12KT4
厂家: Infineon    Infineon
描述:

62mm C-series module with fast trench/fieldstop IGBT4 and Emitter Controlled diode
快速沟/场终止IGBT 4和发射极控制二极管62毫米C系列模块

晶体 二极管 晶体管 双极性晶体管 栅 局域网
文件: 总8页 (文件大小:278K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FF450R12KT4  
62mm C-Serien Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled Diode  
62mm C-series module with fast trench/fieldstop IGBT4 and Emitter Controlled diode  
IGBT-Wechselrichter / IGBT-inverter  
Vorläufige Daten / preliminary data  
chstzulässige Werte / maximum rated values  
Kollektor-Emitter-Sperrspannung  
collector-emitter voltage  
TÝÎ = 25°C  
V†Š»  
1200  
V
Kollektor-Dauergleichstrom  
DC-collector current  
T† = 100°C, TÝÎ = 175°C  
T† = 25°C, TÝÎ = 175°C  
I† ÒÓÑ  
I†  
450  
580  
A
A
Periodischer Kollektor Spitzenstrom  
repetitive peak collector current  
t« = 1 ms  
I†ç¢  
PÚÓÚ  
900  
2400  
+/-20  
A
W
V
Gesamt-Verlustleistung  
total power dissipation  
T† = 25°C, TÝÎ = 175°C  
Gate-Emitter-Spitzenspannung  
gate-emitter peak voltage  
V•Š»  
Charakteristische Werte / characteristic values  
min. typ. max.  
Kollektor-Emitter Sättigungsspannung  
collector-emitter saturation voltage  
I† = 450 A, V•Š = 15 V  
I† = 450 A, V•Š = 15 V  
I† = 450 A, V•Š = 15 V  
TÝÎ = 25°C  
TÝÎ = 125°C V†Š ÙÈÚ  
TÝÎ = 150°C  
1,75 2,15  
2,05  
2,10  
V
V
V
Gate-Schwellenspannung  
gate threshold voltage  
I† = 17,0 mA, V†Š = V•Š, TÝÎ = 25°C  
V•Š = -15 V ... +15 V  
V•ŠÚÌ  
Q•  
5,2  
5,8  
3,60  
1,9  
6,4  
V
µC  
Â
Gateladung  
gate charge  
Interner Gatewiderstand  
internal gate resistor  
TÝÎ = 25°C  
R•ÍÒÚ  
CÍþÙ  
CØþÙ  
I†Š»  
I•Š»  
Eingangskapazität  
input capacitance  
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V  
V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C  
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C  
28,0  
1,10  
nF  
nF  
Rückwirkungskapazität  
reverse transfer capacitance  
Kollektor-Emitter Reststrom  
collector-emitter cut-off current  
5,0 mA  
400 nA  
Gate-Emitter Reststrom  
gate-emitter leakage current  
Einschaltverzögerungszeit (ind. Last)  
turn-on delay time (inductive load)  
I† = 450 A, V†Š = 600 V  
V•Š = ±15 V  
R•ÓÒ = 1,0 Â  
TÝÎ = 25°C  
tÁ ÓÒ  
0,16  
0,17  
0,18  
µs  
µs  
µs  
TÝÎ = 125°C  
TÝÎ = 150°C  
Anstiegszeit (induktive Last)  
rise time (inductive load)  
I† = 450 A, V†Š = 600 V  
V•Š = ±15 V  
R•ÓÒ = 1,0 Â  
TÝÎ = 25°C  
tØ  
0,04  
0,045  
0,05  
µs  
µs  
µs  
TÝÎ = 125°C  
TÝÎ = 150°C  
Abschaltverzögerungszeit (ind. Last)  
turn-off delay time (inductive load)  
I† = 450 A, V†Š = 600 V  
V•Š = ±15 V  
R•ÓËË = 1,0 Â  
TÝÎ = 25°C  
tÁ ÓËË  
0,45  
0,52  
0,54  
µs  
µs  
µs  
TÝÎ = 125°C  
TÝÎ = 150°C  
Fallzeit (induktive Last)  
fall time (inductive load)  
I† = 450 A, V†Š = 600 V  
V•Š = ±15 V  
R•ÓËË = 1,0 Â  
TÝÎ = 25°C  
tË  
0,10  
0,16  
0,18  
µs  
µs  
µs  
TÝÎ = 125°C  
TÝÎ = 150°C  
Einschaltverlustenergie pro Puls  
turn-on energy loss per pulse  
I† = 450 A, V†Š = 600 V, L» = 30 nH TÝÎ = 25°C  
V•Š = ±15 V, di/dt = 9000 A/µs (TÝÎ=150°C) TÝÎ = 125°C  
19,0  
30,0  
36,0  
mJ  
mJ  
mJ  
EÓÒ  
EÓËË  
R•ÓÒ = 1,0 Â  
TÝÎ = 150°C  
Abschaltverlustenergie pro Puls  
turn-off energy loss per pulse  
I† = 450 A, V†Š = 600 V, L» = 30 nH TÝÎ = 25°C  
V•Š = ±15 V, du/dt = 4500 V/µs (TÝÎ=150°C) TÝÎ = 125°C  
26,0  
40,0  
43,0  
mJ  
mJ  
mJ  
R•ÓËË = 1,0 Â  
TÝÎ = 150°C  
Kurzschlussverhalten  
SC data  
V•Š ù 15 V, V†† = 800 V  
V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt  
I»†  
t« ù 10 µs, TÝÎ = 150°C  
1800  
A
Innerer Wärmewiderstand  
thermal resistance, junction to case  
pro IGBT / per IGBT  
pro IGBT / per IGBT  
ð«ÈÙÚþ = 1 W/(m·K)  
RÚÌœ†  
RÚ̆™  
0,062 K/W  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink  
0,03  
K/W  
/
ðÃØþÈÙþ = 1 W/(m·K)  
prepared by: Martin Knecht  
date of publication: 2008-11-19  
revision: 2.3  
approved by: Wilhelm Rusche  
1
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FF450R12KT4  
Vorläufige Daten  
preliminary data  
Diode-Wechselrichter / diode-inverter  
chstzulässige Werte / maximum rated values  
Periodische Spitzensperrspannung  
repetitive peak reverse voltage  
TÝÎ = 25°C  
Vçç¢  
1200  
450  
V
A
A
Dauergleichstrom  
DC forward current  
IŒ  
IŒç¢  
I²t  
Periodischer Spitzenstrom  
t« = 1 ms  
900  
repetitive peak forward current  
Grenzlastintegral  
I²t - value  
Vç = 0 V, t« = 10 ms, TÝÎ = 125°C  
Vç = 0 V, t« = 10 ms, TÝÎ = 150°C  
34000  
32000  
A²s  
A²s  
Charakteristische Werte / characteristic values  
min. typ. max.  
Durchlassspannung  
forward voltage  
IŒ = 450 A, V•Š = 0 V  
IŒ = 450 A, V•Š = 0 V  
IŒ = 450 A, V•Š = 0 V  
TÝÎ = 25°C  
TÝÎ = 125°C  
TÝÎ = 150°C  
1,70 2,25  
1,75  
1,75  
V
V
V
VŒ  
Iç¢  
QØ  
Rückstromspitze  
peak reverse recovery current  
IŒ = 450 A, - diŒ/dt = 9000 A/µs (TÝÎ=150°C) TÝÎ = 25°C  
TÝÎ = 125°C  
TÝÎ = 150°C  
490  
550  
560  
A
A
A
Vç = 600 V  
V•Š = -15 V  
Sperrverzögerungsladung  
recovered charge  
IŒ = 450 A, - diŒ/dt = 9000 A/µs (TÝÎ=150°C) TÝÎ = 25°C  
TÝÎ = 125°C  
TÝÎ = 150°C  
44,0  
80,0  
90,0  
µC  
µC  
µC  
Vç = 600 V  
V•Š = -15 V  
Abschaltenergie pro Puls  
reverse recovery energy  
IŒ = 450 A, - diŒ/dt = 9000 A/µs (TÝÎ=150°C) TÝÎ = 25°C  
TÝÎ = 125°C  
TÝÎ = 150°C  
19,0  
35,0  
39,0  
mJ  
mJ  
mJ  
Vç = 600 V  
V•Š = -15 V  
EØþÊ  
Innerer Wärmewiderstand  
thermal resistance, junction to case  
pro Diode / per diode  
RÚÌœ†  
RÚ̆™  
0,11 K/W  
K/W  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink  
pro Diode / per diode  
/
0,055  
ð«ÈÙÚþ = 1 W/(m·K)  
ðÃØþÈÙþ = 1 W/(m·K)  
prepared by: Martin Knecht  
date of publication: 2008-11-19  
revision: 2.3  
approved by: Wilhelm Rusche  
2
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FF450R12KT4  
Vorläufige Daten  
preliminary data  
Modul / module  
Isolations-Prüfspannung  
RMS, f = 50 Hz, t = 1 min.  
insulation test voltage  
Vš»¥¡  
4,0  
Cu  
kV  
Material Modulgrundplatte  
material of module baseplate  
Material für innere Isolation  
material for internal insulation  
AlèOé  
Kriechstrecke  
creepage distance  
Kontakt - Kühlkörper / terminal to heatsink  
Kontakt - Kontakt / terminal to terminal  
29,0  
23,0  
mm  
mm  
Luftstrecke  
clearance distance  
Kontakt - Kühlkörper / terminal to heatsink  
Kontakt - Kontakt / terminal to terminal  
23,0  
11,0  
Vergleichszahl der Kriechwegbildung  
comparative tracking index  
CTI  
> 400  
min. typ. max.  
0,01  
Übergangs-Wärmewiderstand  
thermal resistance, case to heatsink  
pro Modul / per module  
ð«ÈÙÚþ = 1 W/(m·K) / ðÃØþÈÙþ = 1 W/(m·K)  
RÚ̆™  
LÙ†Š  
K/W  
nH  
Modulinduktivität  
stray inductance module  
20  
Modulleitungswiderstand,  
Anschlüsse - Chip  
module lead resistance,  
terminals - chip  
T† = 25°C, pro Schalter / per switch  
R††óôŠŠó  
0,70  
m  
Höchstzulässige Sperrschichttemperatur  
maximum junction temperature  
Wechselrichter, Brems-Chopper / Inverter, Brake-Chopper TÝÎ ÑÈà  
175  
°C  
°C  
°C  
Temperatur im Schaltbetrieb  
temperature under switching conditions  
Wechselrichter, Brems-Chopper / Inverter, Brake-Chopper TÝÎ ÓÔ  
TÙÚÃ  
-40  
-40  
150  
125  
Lagertemperatur  
storage temperature  
Anzugsdrehmoment f. mech. Befestigung Schraube M6 - Montage gem. gültiger Applikation Note  
mounting torque screw M6 - mounting according to valid application note  
M
M
G
3,00  
2,5  
-
-
6,00 Nm  
5,0 Nm  
g
Anzugsdrehmoment f. elektr. Anschlüsse Schraube M6 - Montage gem. gültiger Applikation Note  
screw M6 - mounting according to valid application note  
terminal connection torque  
Gewicht  
weight  
340  
prepared by: Martin Knecht  
date of publication: 2008-11-19  
revision: 2.3  
approved by: Wilhelm Rusche  
3
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FF450R12KT4  
Vorläufige Daten  
preliminary data  
Ausgangskennlinie IGBT-Wechselr. (typisch)  
output characteristic IGBT-inverter (typical)  
I† = f (V†Š)  
Ausgangskennlinienfeld IGBT-Wechselr. (typisch)  
output characteristic IGBT-inverter (typical)  
I† = f (V†Š)  
TÝÎ = 150°C  
V•Š = 15 V  
900  
900  
810  
720  
630  
540  
450  
360  
270  
180  
90  
TÝÎ = 25°C  
TÝÎ = 125°C  
TÝÎ = 150°C  
V•Š = 19V  
V•Š = 17V  
V•Š = 15V  
V•Š = 13V  
V•Š = 11V  
V•Š = 9V  
810  
720  
630  
540  
450  
360  
270  
180  
90  
0
0
0,0  
0,5  
1,0  
1,5 2,0  
V†Š [V]  
2,5  
3,0  
3,5  
0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0  
V†Š [V]  
Übertragungscharakteristik IGBT-Wechselr. (typisch)  
transfer characteristic IGBT-inverter (typical)  
I† = f (V•Š)  
Schaltverluste IGBT-Wechselr. (typisch)  
switching losses IGBT-inverter (typical)  
EÓÒ = f (I†), EÓËË = f (I†)  
V†Š = 20 V  
V•Š = ±15 V, R•ÓÒ = 1 Â, R•ÓËË = 1 Â, V†Š = 600 V  
900  
120  
TÝÎ = 25°C  
TÝÎ = 125°C  
TÝÎ = 150°C  
EÓÒ, TÝÎ = 125°C  
EÓËË, TÝÎ = 125°C  
EÓÒ, TÝÎ = 150°C  
810  
100  
80  
60  
40  
20  
0
EÓËË, TÝÎ = 150°C  
720  
630  
540  
450  
360  
270  
180  
90  
0
5
6
7
8
9
V•Š [V]  
10  
11  
12  
13  
0
100 200 300 400 500 600 700 800 900  
I† [A]  
prepared by: Martin Knecht  
date of publication: 2008-11-19  
revision: 2.3  
approved by: Wilhelm Rusche  
4
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FF450R12KT4  
Vorläufige Daten  
preliminary data  
Schaltverluste IGBT-Wechselr. (typisch)  
switching losses IGBT-Inverter (typical)  
EÓÒ = f (R•), EÓËË = f (R•)  
Transienter Wärmewiderstand IGBT-Wechselr.  
transient thermal impedance IGBT-inverter  
ZÚÌœ† = f (t)  
V•Š = ±15 V, I† = 450 A, V†Š = 600 V  
200  
0,1  
EÓÒ, TÝÎ = 125°C  
EÓËË, TÝÎ = 125°C  
EÓÒ, TÝÎ = 150°C  
EÓËË, TÝÎ = 150°C  
ZÚÌœ† : IGBT  
180  
160  
140  
120  
100  
80  
0,01  
60  
40  
i:  
1
2
3
4
rÍ[K/W]: 0,00372 0,02046 0,01984 0,01798  
0,01 0,02 0,05 0,1  
20  
τÍ[s]:  
0
0,001  
0,001  
0
1
2
3
4
5
R• [Â]  
6
7
8
9
10  
0,01  
0,1  
t [s]  
1
10  
Sicherer Rückwärts-Arbeitsbereich IGBT-Wr. (RBSOA)  
reverse bias safe operating area IGBT-inv. (RBSOA)  
I† = f (V†Š)  
Durchlasskennlinie der Diode-Wechselr. (typisch)  
forward characteristic of diode-inverter (typical)  
IŒ = f (VŒ)  
V•Š = ±15 V, R•ÓËË = 1 Â, TÝÎ = 150°C  
1200  
900  
I†, Modul  
I†, Chip  
TÝÎ = 25°C  
TÝÎ = 125°C  
TÝÎ = 150°C  
810  
720  
900  
600  
300  
0
630  
540  
450  
360  
270  
180  
90  
0
0
200  
400  
600 800  
V†Š [V]  
1000 1200 1400  
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4  
VŒ [V]  
prepared by: Martin Knecht  
date of publication: 2008-11-19  
revision: 2.3  
approved by: Wilhelm Rusche  
5
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FF450R12KT4  
Vorläufige Daten  
preliminary data  
Schaltverluste Diode-Wechselr. (typisch)  
switching losses diode-inverter (typical)  
EØþÊ = f (IŒ)  
Schaltverluste Diode-Wechselr. (typisch)  
switching losses diode-inverter (typical)  
EØþÊ = f (R•)  
R•ÓÒ = 1 Â, V†Š = 600 V  
IŒ = 450 A, V†Š = 600 V  
50  
50  
EØþÊ, TÝÎ = 125°C  
EØþÊ, TÝÎ = 150°C  
EØþÊ, TÝÎ = 125°C  
EØþÊ, TÝÎ = 150°C  
45  
45  
40  
35  
30  
25  
20  
15  
10  
5
40  
35  
30  
25  
20  
15  
10  
5
0
0
0
100 200 300 400 500 600 700 800 900  
IŒ [A]  
0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 9,0 10,0  
R• [Â]  
Transienter Wärmewiderstand Diode-Wechselr.  
transient thermal impedance diode-inverter  
ZÚÌœ† = f (t)  
1
ZÚÌœ† : Diode  
0,1  
0,01  
i:  
1
2
3
rÍ[K/W]: 0,0066 0,0363 0,0352 0,0319  
4
τÍ[s]:  
0,01  
0,02  
0,05  
0,1  
0,001  
0,001  
0,01  
0,1  
t [s]  
1
10  
prepared by: Martin Knecht  
date of publication: 2008-11-19  
revision: 2.3  
approved by: Wilhelm Rusche  
6
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FF450R12KT4  
Vorläufige Daten  
preliminary data  
Schaltplan / circuit diagram  
Gehäuseabmessungen / package outlines  
j n  
j n  
i
i
prepared by: Martin Knecht  
date of publication: 2008-11-19  
revision: 2.3  
approved by: Wilhelm Rusche  
7
Technische Information / technical information  
IGBT-Module  
IGBT-modules  
FF450R12KT4  
Vorläufige Daten  
preliminary data  
Nutzungsbedingungen  
Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die  
Beurteilung der Eignung dieses Produktes für Ihre Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten  
Produktdaten für diese Anwendung obliegt Ihnen bzw. Ihren technischen Abteilungen.  
In diesem Produktdatenblatt werden diejenigen Merkmale beschrieben, für die wir eine liefervertragliche Gewährleistung  
übernehmen. Eine solche Gewährleistung richtet sich ausschließlich nach Maßgabe der im jeweiligen Liefervertrag enthaltenen  
Bestimmungen. Garantien jeglicher Art werden für das Produkt und dessen Eigenschaften keinesfalls übernommen.  
Sollten Sie von uns Produktinformationen benötigen, die über den Inhalt dieses Produktdatenblatts hinausgehen und  
insbesondere eine spezifische Verwendung und den Einsatz dieses Produktes betreffen, setzen Sie sich bitte mit dem für Sie  
zuständigen Vertriebsbüro in Verbindung (siehe www.infineon.com, Vertrieb&Kontakt). Für Interessenten halten wir Application  
Notes bereit.  
Aufgrund der technischen Anforderungen nnte unser Produkt gesundheitsgefährdende Substanzen enthalten. Bei ckfragen  
zu den in diesem Produkt jeweils enthaltenen Substanzen setzen Sie sich bitte ebenfalls mit dem für Sie zuständigen Vertriebsbüro  
in Verbindung.  
Sollten Sie beabsichtigen, das Produkt in Anwendungen der Luftfahrt, in gesundheits- oder lebensgefährdenden oder  
lebenserhaltenden Anwendungsbereichen einzusetzen, bitten wir um Mitteilung. Wir weisen darauf hin, dass wir für diese Fälle  
- die gemeinsame Durchführung eines Risiko- und Qualitätsassessments;  
- den Abschluss von speziellen Qualitätssicherungsvereinbarungen;  
- die gemeinsame Einführung von Maßnahmen zu einer laufenden Produktbeobachtung dringend empfehlen und  
gegebenenfalls die Belieferung von der Umsetzung solcher Maßnahmen abhängig machen.  
Soweit erforderlich, bitten wir Sie, entsprechende Hinweise an Ihre Kunden zu geben.  
Inhaltliche Änderungen dieses Produktdatenblatts bleiben vorbehalten.  
Terms & Conditions of usage  
The data contained in this product data sheet is exclusively intended for technically trained staff. You and your technical  
departments will have to evaluate the suitability of the product for the intended application and the completeness of the product  
data with respect to such application.  
This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is  
granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the  
product and its characteristics.  
Should you require product information in excess of the data given in this product data sheet or which concerns the specific  
application of our product, please contact the sales office, which is responsible for you (see www.infineon.com, sales&contact).  
For those that are specifically interested we may provide application notes.  
Due to technical requirements our product may contain dangerous substances. For information on the types in question please  
contact the sales office, which is responsible for you.  
Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please  
notify. Please note, that for any such applications we urgently recommend  
- to perform joint Risk and Quality Assessments;  
- the conclusion of Quality Agreements;  
- to establish joint measures of an ongoing product survey,  
and that we may make delivery depended on the realization  
of any such measures.  
If and to the extent necessary, please forward equivalent notices to your customers.  
Changes of this product data sheet are reserved.  
prepared by: Martin Knecht  
date of publication: 2008-11-19  
revision: 2.3  
approved by: Wilhelm Rusche  
8

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INFINEON

FF450R12ME3

EconoDUAL module with trench/fieldstop IGBT3 and EmCon High Efficiency diode
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FF450R12ME4

EconoDUAL3 module with Trench/Fieldstop IGBT4 and Emitter Controlled HE diode and NTC
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FF450R12ME4B11BOSA1

Insulated Gate Bipolar Transistor, 675A I(C), 1200V V(BR)CES, N-Channel, MODULE-11
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FF450R12ME4B11BPSA1

Insulated Gate Bipolar Transistor,
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FF450R12ME4EB11BPSA1

Insulated Gate Bipolar Transistor, 675A I(C), 1200V V(BR)CES, N-Channel, MODULE-11
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FF450R12ME4P

Insulated Gate Bipolar Transistor, 675A I(C), 1200V V(BR)CES, N-Channel, MODULE-11
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FF450R12ME4PB11BOSA1

Insulated Gate Bipolar Transistor, 675A I(C), 1200V V(BR)CES, N-Channel, MODULE-11
INFINEON

FF450R12ME4PBOSA1

Insulated Gate Bipolar Transistor, 675A I(C), 1200V V(BR)CES, N-Channel, MODULE-11
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FF450R12ME4_B11

Insulated Gate Bipolar Transistor
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