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FP50R07N2E4BOSA1 [INFINEON]

Insulated Gate Bipolar Transistor;

FP50R07N2E4BOSA1


元器件型号：	FP50R07N2E4BOSA1
生产厂家：	INFINEON TECHNOLOGIES AG
描述和应用：	Insulated Gate Bipolar Transistor 栅
PDF文件：	总12页 (文件大小：697K)
下载文档：	下载PDF数据表文档文件
型号参数：FP50R07N2E4BOSA1参数

FP50R07U1E4

Insulated Gate Bipolar Transistor,

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1 INFINEON

FP50R07U1E4BPSA1

Insulated Gate Bipolar Transistor, 75A I(C), 650V V(BR)CES, N-Channel, MODULE-35

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0 INFINEON

FP50R0R07N2E4

Insulated Gate Bipolar Transistor, 70A I(C), 650V V(BR)CES, N-Channel, MODULE-31

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0 INFINEON

FP50R12KE3

Elektrische Eigenschaften / Electrical properties

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536 EUPEC

FP50R12KE3V1

IGBT Module

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197 ETC

FP50R12KS4CBOSA1

Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, MODULE-35

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2 INFINEON

FP50R12KS4CV2

IGBT Module

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183 ETC

FP50R12KT3

IGBT-modules

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674 EUPEC

FP50R12KT4

EconoPIM2 module with trench/fieldstop IGBT4 and EmCon4 diode

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379 INFINEON

FP50R12KT4_B11

EconoPIM2 module with Trench/Fieldstopp IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC

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116 INFINEON

FP50R12KT4BOSA1

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-23

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0 INFINEON

FP50R12KT4G

EconoPIM3 module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC

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331 INFINEON

FP50R12KT4G_B15

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-35

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11 INFINEON

FP50R12KT4GB15BOSA1

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-35

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0 INFINEON

FP50R12KT4GBOSA1

Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, ROHS COMPLIANT PACKAGE-35

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1 INFINEON

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