G300HHCK12P2 [INFINEON]
Insulated Gate Bipolar Transistor, 450A I(C), 1200V V(BR)CES,;
| 型号： | G300HHCK12P2 |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 450A I(C), 1200V V(BR)CES, 栅 |
| 文件： | 总6页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-97014A
HiRelTM INT-A-Pak 2, PLASTIC
HALF-BRIDGE IGBT MODULE
G300HHCK12P2
Product Summary
V
I
V
CE(SAT)
Part Number
CE
C
G300HHCK12P2
1200V
300A
2.2
HiRelTM INT-A-Pak 2
The HiRelTM INT-A-Pak series are isolated near
hermetic power modules which combine the latest
IGBT and Soft Recovery Rectifier Technology. The
module uses both high-speed and low Vce(sat)
IGBT's packaged for ultra low thermal resistance
junction to case. The G300HHCK12P2 power
module consists of six IGBT's and six FRED's in a
Phase- Leg or Half-Bridge configuration.
Features:
n
Rugged, Lightweight near Hermetic Package
with Integrated Power Terminal Cap
Gen IV IGBT Technology
n
n
n
n
n
n
n
Soft Recovery Rectifiers
Ultra-Low Thermal Resistance
Zener Gate Protection
Very Low Conduction and Switching Loss
-55°C to +125°C Operating Temperature
Screening to meet the intent of
MIL-PRF-38534 Class H
n
n
n
Short Circuit Capability
2.0 Ohms Series Gate Resistor
High Altitude Operation, 85,000 Feet Above
Sea Level at Rated Voltage
Absolute Maximum Ratings @ Tj=25°C (unless otherwise specified)
Parameter
Symbol
Value
1200
±20
Units
V
CES
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
V
V
GE
Continuous Collector Current @ Tc = 25°C
Continuous Collector Current @ Tc = 100°C
Isolation Voltage
450
A
I
C
300
2500
V
V
ISOL
RMS
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1
11/08/05
G300HHCK12P2
Electrical Characteristics @ Tj = 25°C (unless otherwise specified)
Parameter
Symbol
Test Conditions
Min. Typ. Max. Units
Off Characteristics
V
V
V
V
= 0V
Collector Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
Gate Emitter Leakage Current
1200
-
-
-
-
V
CES
GE
GE
GE
I
=0V, V = 1200V
CE
-
-
1.0
10
mA
µ
A
CES
I
= ±15V, V = 0V
CE
GES
On Characteristics
V
V
V
= V , I = 1.0mA
Gate Threshold Voltage
3.5
-
-
7.5
2.7
GE(TH)
CE
GE
GE
C
V
V
= 15V, I = 300A
C
Collector Emitter Saturation Voltage
2.2
CE(SAT)
Dynamic Characteristics
Total Gate Charge
V
V
= 600V, I = 300A, V = 15V
-
-
-
-
2300
44
-
-
-
-
Qg
nC
nF
CE
GE
C
GE
C
Input Capacitance
IES
C
OES
= 0V, V = 25V, f = 1.0MHz
CE
Output Capacitance
3.0
0.3
C
Reverse Transfer Capacitance
RES
Switching Inductive Load Characteristics
Turn-On Delay Time
td(on)
tr
-
-
830
1000
ns
mJ
ns
Rise Time
Turn-On Losses
300
100
400
-
E
on
V
R
= 600V, I = 300A, V =15V
CC
C
GE
= 20Ω, R
=10Ω, L=100µH
Turn-Off Delay Time
td(off)
1900 2200
G(on)
G(off)
Fall Time
Turn-Off Losses
tf
-
-
300
55
400
-
E
mJ
off
Diode Characteristics
V
F
I
= 300A
Forward Voltage
-
1.9
2.2
V
F
µ
C
A
Reverse Recovery Charge
Peak Reverse Recovery Current
Qrr
Irr
-
-
15
90
20
-
µ
=600V, I =300A, di/dt =-800A/ s
C
V
R
Reverse Recovery Time
trr
-
500
800
ns
2
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G300HHCK12P2
Electrical Characteristics @ Tj = 125°C (unless otherwise specified)
Parameter
Symbol
Test Conditions
Min. Typ. Max. Units
Off Characteristics
V
V
V
V
= 0V
Collector Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
Gate Emitter Leakage Current
1200
-
-
-
-
V
CES
GE
GE
GE
I
=0V, V = 1200V
CE
-
-
3.0
10
mA
µ
A
CES
I
= ±15V, V = 0V
CE
GES
On Characteristics
V
V
V
= V , I = 1.0mA
Gate Threshold Voltage
3.5
-
-
7.5
2.7
GE(TH)
CE
GE
GE
C
V
V
= 15V, I = 300A
C
Collector Emitter Saturation Voltage
2.2
CE(SAT)
Diode Characteristics
V
F
I
= 300A
F
Forward Voltage
-
1.9
2.2
V
Thermal-Mechanical Specifications
Parameter
Symbol
Min
-
Max
Units
IGBT Thermal Resistance, Junction to Case, per Switch
Diode Thermal Resistance, Junction to Case, per Switch
Operating Junction Temperature Range
Storage Temperature Range
0.06
R
°C/W
thJC
-
0.10
150
T
J
-55
-55
°C
T
125
STG
Screw Torque - Mounting
T
-
-
26
in-lbs
g
Screw Torque - Terminals
Module Weight
270
Module Screening
Test or Inspection
MIL-STD-883
Comments
Method
2017
Condition
Internal Visual
Temperature Cycle
Mechanical Shock
Burn-in
1010
B
B
A
10 Cycles, -55°C to +125°C
1500G, 0.5ms, 5 Times (Y1 direction only)
160 Hrs @ +125°C
2002
1015
Final Electrical Test
External Visual
Group A, -55°C, +25°C, +125°C
2009
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3
G300HHCK12P2
Schematic
500
400
300
200
100
0
25
50
75
100
125
150
T , Case Temperature (°C)
C
Fig 1: Maximum Collector Current Vs Case Temperature
4
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G300HHCK12P2
90% Vge
+Vge
Vce
90% Ic
10% Vce
Ic
Ic
5% Ic
td(off)
tf
t1+5µS
Eoff = Vce ic dt
∫
VceIc dt
t1
t2
Fig. 3 - Test Waveforms for Circuit of Fig. 2,
Fig. 2 - Test Circuit for Measurement of Eon,
Defining Eoff, td(off), tf
Eoff, trr, Qrr, Irr, td(on), tr, td(off), tf
trr
trr
GATE VOLTAGE D.U.T.
Qrr =
Ic dt
Ic
∫
tx
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
DUT VOLTAGE
AND CURRENT
Vce
Vpk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIODE RECOVERY
WAVEFORMS
5% Vce
tr
td(on)
t2
Eon = Vce Ic dt
t4
∫
Erec = V
t1
Vc Ic dt
∫
t3
DIODE REVERSE
RECOVERY ENERGY
t1
t2
t3
t4
Fig. 4 - Test Waveforms for Circuit of Fig. 2,
Fig. 3 - Test Waveforms for Circuit of Fig. 2,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
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5
G300HHCK12P2
Case Outline and Dimensions - HiRelTM INT-A-Pak 2
Notes: 1) All dimensions are in inches
2) Unless otherwise specified,
Tolerances .XX = ±0.01, .XXX = ±0.005
Part numbering Nomenclature
G 300 HH C K 12 P2 H
Screening Level
P = Unscreened, 25°C Electrical Test
( Not intended for Qualification)
H = Screened per MIL-PRF-38534
IGBT Module - Hirel
Current Capability
300 = 300 Amps
Package Type
P2 = HiRelTM INT-A-Pak 2,
2.5" X 4.0" X 1.0"
Circuit Configuration
HH = Half Bridge
Voltage
12 = 1200V
Generation
IGBT / FWD Configuration
C = GEN 5 (NPT) / GEN 3
IGBT Speed / SC Capability
K = Fast, SC Capable
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR LEOMINSTER: 205 Crawford St., Leominster, Massachusetts 01453, Tel: (978) 534-5776
Data and specifications subject to change without notice.
11/05
6
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