GA75TS120U [INFINEON]
Ultra-FastTM Speed IGBT; 超FastTM高速IGBT
| 型号： | GA75TS120U |
| 厂家： | 
Infineon |
| 描述： | Ultra-FastTM Speed IGBT |
| 文件： | 总10页 (文件大小：258K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 50062A
GA75TS120U
Ultra-FastTM Speed IGBT
"HALF-BRIDGE" IGBT INT-A-PAK
Features
VCES = 1200V
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
VCE(on) typ. = 2.1V
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft
recovery
@V = 15V, IC = 75A
GE
• Industry standard package
• UL approved
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding
• Lower EMI, requires less snubbing
Absolute Maximum Ratings
Parameter
Collector-to-Emitter Voltage
Max.
1200
75
150
150
150
20
Units
V
VCES
IC @ TC = 25°C
Continuous Collector Current
Pulsed Collector Current ➀
ICM
A
ILM
Peak Switching Current ➁
IFM
Peak Diode Forward Current
Gate-to-Emitter Voltage
VGE
V
VISOL
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
2500
390
200
PD @ TC = 25°C
W
PD @ TC = 85°C
TJ
-40 to +150
-40 to +125
°C
TSTG
Thermal / Mechanical Characteristics
Parameter
Thermal Resistance, Junction-to-Case - IGBT
Typ.
—
—
Max.
0.32
0.35
—
Units
RθJC
RθJC
RθCS
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink
Mounting Torque, Case-to-Terminal 1, 2 & 3 ➂
Weight of Module
°C/W
0.1
—
.
4.0
N m
—
3.0
200
—
g
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1
4/24/2000
GA75TS120U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 1mA
V(BR)CES
VCE(on)
Collector-to-Emitter Breakdown Voltage 1200
—
—
Collector-to-Emitter Voltage
Gate Threshold Voltage
—
—
3.0
—
—
—
—
—
—
—
2.1 3.1
VGE = 15V, IC = 75A
1.9
—
—
6.0
—
V
VGE = 15V, IC = 75A, TJ = 125°C
VCE = 6.0V, IC = 750µA
VGE(th)
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
gfe
-11
107
—
mV/°C VCE = 6.0V, IC = 750µA
Forward Transconductance ➃
—
S
VCE = 25V, IC = 75A
ICES
Collector-to-Emitter Leaking Current
1.0
10
mA
VGE = 0V, VCE = 1200V
VGE = 0V, VCE = 1200V, TJ = 125°C
IF = 75A, VGE = 0V
—
VFM
IGES
Diode Forward Voltage - Maximum
Gate-to-Emitter Leakage Current
2.3 3.3
V
2.1
—
IF = 75A, VGE = 0V, TJ = 125°C
—
250
nA
VGE = 20V
Dynamic Characteristics - TJ = 125°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
570 854
96 144
189 283
VCC = 400V
C = 85A
TJ = 25°C
Qge
Qgc
td(on)
tr
nC
ns
I
109
119
392
402
11
—
—
—
—
—
—
45
—
—
—
—
—
—
—
RG1 = 15Ω, RG2 = 0Ω,
IC = 75A
Rise Time
td(off)
tf
Turn-Off Delay Time
VCC = 720V
Fall Time
VGE = 15V
Eon
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
Input Capacitance
mJ Inductor load
Eoff(1)
Ets (1)
Cies
Coes
Cres
trr
20
31
12815
570
110
174
107
9367
1491
VGE = 0V
Output Capacitance
pF
VCC = 30V
ƒ = 1 MHz
IC = 75A
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak ReverseCurrent
Diode Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
ns
A
Irr
RG1 = 15Ω
nC RG2 = 0Ω
A/µs VCC = 720V
Qrr
di(rec)M/dt
di/dt = 1300A/µs
2
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GA75TS120U
80
70
60
50
40
30
20
10
0
F or b oth:
D u ty c yc le : 50 %
T
T
=
1 2 5° C
9 0 °C
J
=
sink
G a te d riv e a s s pe c ified
83
P o w er D iss ipa tio n W
=
Sq uare wave:
60% of rated
voltage
I
Ideal diodes
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
1000
100
°
T = 125 C
J
100
10
1
°
T = 125 C
J
°
T = 25 C
J
°
T = 25 C
J
V
= 15V
V
= 25V
GE
CE
80µs PULSE WIDTH
80µs PULSE WIDTH
10
1.0
0.1
4.0
1.5
2.0
2.5
5.0
6.0
7.0 8.0
V
, Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
CE
GE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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3
GA75TS120U
80
3.0
2.0
1.0
V
= 15V
GE
80 us PULSE WIDTH
I
=150 A
= 75 A
C
60
40
20
0
I
I
C
C
= 37A
-60 -40 -20
0
20 40 60 80 100 120 140 160
25
50
75
100
125
150
°
°
T
, Junction Temperature ( C)
T
, Case Temperature ( C)
J
C
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs. Junction Temperature
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
P
DM
SING LE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
J
x Z
+ T
DM
thJC
C
A
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
t
, Rectangular Pulse Duration (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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GA75TS120U
25000
20000
15000
10000
5000
0
20
15
10
5
V
= 0V,
f = 1MHz
gc , ce
V
CC
I
C
= 400V
85 A
=
GE
C
= C + C
ge
C
SHORTED
ies
C
= C
gc
= C + C
ce
res
C
oes
gc
0
1
10
100
0
200
400
600
V
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
CE
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
100
45
40
35
30
25
= 15V
= 720V
RG1=15Ω;RG2 = 0 Ω
V
V
T
= 720V
CC
GE
I
I
I
=
=
A
A
A
150
75
C
C
C
V
= 15V
C
GE
°
= 125°C
V
CC
I
= 75A
C
= 37A
10
1
-60 -40 -20
10
20
30
40
50
0
20 40 60 80 100 120 140 160
R
, Gate Resistance ( Ω)
°
T , Junction Temperature ( C )
J
G
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
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GA75TS120U
200
150
100
50
70
V
= 20V
R
=15Ω;R = 0 Ω
R
G1
G2
GE
J
T
V
= 125o C
CC
TC = 125°C
measured at terminal(Peak Voltage)
V
= 720V
= 15V
60
50
40
30
20
10
0
CE
V
GE
SAFE OPERATING AREA
200 400 600 800 1000 1200 1400
0
0
0
20
40
C
60
80
100 120 140 160
I
, Collector Current (A)
V
, Collector-to-Emitter Voltage (V)
CE
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Reverse Bias SOA
Collector-to-Emitter Current
1000
16000
12000
8000
4000
0
I
= 150A
F
F
F
I
I
= 75A
= 37A
100
T
= 125°C
= 25°C
J
T
J
VR = 720V
TJ = 125°C
TJ = 25°C
10
1.0
1.4
1.8
2.2
2.6
3.0
500
1000
2000
di /dt - (A/µ1s5)00
f
Forward Voltage Drop - V
(V)
FM
Fig. 14 - Typical Stored Charge vs. dif/dt
Fig. 13 - Typical Forward Voltage Drop vs.
Instantaneous Forward Current
6
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GA75TS120U
200
160
120
80
250
200
150
100
VR = 720V
TJ = 125°C
TJ = 25°C
I
= 150A
= 75A
= 37A
F
I
F
F
I
I
I
= 150A
I
F
F
F
= 75A
= 37A
40
VR = 720V
TJ = 125°C
TJ = 25°C
0
500
1000di /dt - (A/µs)
1500
2000
500
1000
1500
2000
di /dt - (A/µs)
f
f
Fig. 15 - Typical Reverse Recovery vs. dif/dt
Fig. 16 - Typical Recovery Current vs. dif/dt
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GA75TS120U
90% Vge
+Vge
Vce
90% Ic
10% Vce
Ic
Ic
5% Ic
td(off)
tf
t1+5µ S
Eoff =
Vce Ic dt
∫
t1
Fig. 17a - Test Circuit for Measurement of
LM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
I
t1
t2
Fig. 17b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
trr
G ATE VO LTA G E D .U .T.
Q rr =
Ic dt
Ic
∫
tx
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
D UT VO LTAG E
AN D CU RRE NT
Vce
V pk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIO DE RE CO V ERY
W AVEFO RMS
5% Vce
tr
td(on)
t2
E on = Vce Ic dt
t4
∫
Erec =
t1
Vd Ic dt
∫
t3
DIO DE REVE RSE
REC O VERY ENER G Y
t1
t2
t3
t4
Fig. 17d - Test Waveforms for Circuit of Fig. 18a,
Fig. 17c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
8
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GA75TS120U
Vg
G ATE SIG NAL
DEVICE U NDE R TEST
CUR REN T D .U .T.
VO LTAG E IN D.U.T.
CUR REN T IN D1
t0
t1
t2
Figure 17e. Macro Waveforms for Figure 18a's Test Circuit
600V
4 X IC @25°C
L
D.U.T.
RL=
1000V
V *
c
0 - 600V
50V
6000µ F
100 V
Figure 19. Pulsed Collector Current
Test Circuit
Figure 18. Clamped Inductive Load Test Circuit
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GA75TS120U
Notes:
➀
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature.
➁
➂
➃
See fig. 17
For screws M5x0.8
Pulse width 50µs; single shot.
Case Outline — INT-A-PAK
Dimensions are shown in millimeters (inches)
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Data and specifications subject to change without notice. 4/00
10
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