HF30C060ACE [INFINEON]
Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, DIE-1;
| 型号： | HF30C060ACE |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 600V V(RRM), Silicon, DIE-1 二极管 |
| 文件： | 总1页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 2.608
HF30C060ACE
TARGET
HF30C060ACE Hexfred Die in Wafer Form
600 V
Size 30
5" Wafer
Electrical Characteristics ( Wafer Form )
Parameter
Description
Guaranteed (Min/Max)
Test Conditions
TJ = 25°C, IF = 15.0A
VFM
ForwardVoltage
1.7VMax.
600V Min.
10µAMax.
BVR
IRM
ReverseBreakdownVoltage
ReverseLeakageCurrent
TJ = 25°C, IR = 250µA
TJ = 25°C, VR = 600V
Mechanical Data
Norminal Backmetal Composition, Thickness:
Norminal Front Metal Composition, Thickness:
Dimensions:
Cr-Ni-Ag ( 1kA-4kA-6kA )
99% Al, 1% Si (3 microns)
0.115" x 0.155"
Wafer Diameter:
Wafer thickness:
125mm, with std. < 100 > flat
.015" + / -.003"
Relevant Die Mechanical Dwg. Number
Minimum Street Width
01-5161
100 Microns
Reject Ink Dot Size
0.25mm Diameter Minimum
See Die Outline drawing below
Store in original container, in dessicated
nitrogen, with no contamination
Ink Dot Location
Recommended Storage Environment:
Reference Standard IR packaged part ( for design ) : HFA15TB60
Die Outline
NOTES :
INK DOT LOCATION
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES )
2. CONTROLLING DIMENSION : ( INCH )
3. LETTERDESIGNATION:
A:Anode
K:Cathode
4.DIMENSIONALTOLERANCES:
BONDING PADS : <0.635TOLERANCE=+/-0.013
WIDTH
&
LENGTH
OVERALLDIE
WIDTH
&
< (.0250 ) TOLERANCE = +/- (.0005 )
>0.635TOLERANCE=+/-0.025
> (.0250 ) TOLERANCE = +/- (.0010 )
< 1.270TOLERANCE=+/-0.102
< (.050 ) TOLERANCE = +/- (.004 )
>0.635TOLERANCE=+/-0.203
> (.050 ) TOLERANCE = +/- (.008 )
Anode
LENGTH
03/15/98
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