HF50C120ACEPBF [INFINEON]
Rectifier Diode, 1 Phase, 1 Element, Silicon, 5 INCH, WAFER;
| 型号： | HF50C120ACEPBF |
| 厂家： | 
Infineon |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, Silicon, 5 INCH, WAFER 二极管 |
| 文件： | 总1页 (文件大小：176K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Data Sheet PD-20598 rev. B 11/98
HF50C120ACE
Hexfred Die in Wafer Form
1200 V
Size 50
5" Wafer
Electrical Characteristics ( Wafer Form )
Parameter
Description
Guaranteed (Min/Max)
Test Conditions
TJ = 25°C, IF = 16A
VFM
Forward Voltage
3.0V Max.
BVR
IRM
Reverse Breakdown Voltage
Reverse Leakage Current
1200V Min.
20µA Max.
TJ = 25°C, IR = 200µA
TJ = 25°C, VR = 1200V
Mechanical Data
Nominal Back Metal Composition, Thickness
Nominal Front Metal Composition, Thickness
Chip Dimensions
Cr-Ni-Ag ( 1kA-4kA-6kA )
99% Al, 1% Si (3 microns)
0.257" x 0.257"
Wafer Diameter
Wafer Thickness
125mm, with std. < 100 > flat
.015" ± .003"
Relevant Die Mechanical Dwg. Number
MinimumStreetWidth
01-5168
100 Microns
Reject Ink Dot Size
0.25mmDiameterMinimum
Store in original container, in dessicated
nitrogen, with no contamination
Recommended Storage Environment
Reference Standard IR packaged part ( for design ) :HFA30PB120
Die Outline
NOTES :
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES )
2. CONTROLLING DIMENSION : ( INCH )
3. DIMENSIONALTOLERANCES:
BONDING PADS : <0.635TOLERANCE=±0.013
WIDTH
&
< (.0250)TOLERANCE=±(.0005)
>0.635TOLERANCE=±0.025
>(.0250)TOLERANCE=±(.0010)
< 1.270TOLRANCE=±0.102
< (.050) TOLERANCE = ± (.004)
>1.270 TOLERANCE=±0.203
> (.050) TOLERANCE = ± (.008)
LENGTH
OVERALLDIE
WIDTH
&
LENGTH
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