HFA16PA120C [INFINEON]
HEXFRED Ultrafast, Soft Recovery Diode; HEXFRED超快，软恢复二极管
| 型号： | HFA16PA120C |
| 厂家： | 
Infineon |
| 描述： | HEXFRED Ultrafast, Soft Recovery Diode |
| 文件： | 总7页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin PD -2.361 rev. B 05/01
HFA16PA120C
TM
HEXFRED
Ultrafast, Soft Recovery Diode
*
2
Features
VR = 1200V
VF (max.) = 3.3V
IF (AV) = 8.0A
IRRM (typ.) = 4.5A
• Ultrafast Recovery
• Ultrasoft Recovery
• Very Low IRRM
• Very Low Qrr
• Specified at Operating Conditions
1
3
* per Leg
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
TO-247AC
Description
International Rectifier's HFA16PA120C is a state of the art ultra fast recovery diode.
Employing the latest in epitaxial construction and advanced processing techniques it
features a superb combination of characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and
8 amps continuous current, the HFA16PA120C is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the
HEXFRED product line features extremely low values of peak recovery current (IRRM
)
and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and heatsink
sizes. The HEXFRED HFA16PA120C is ideally suited for applications in power supplies
and power conversion systems (such as inverters), motor drives, and many other similar
applications where high speed, high efficiency is needed.
Absolute Maximum Ratings (per Leg)
Parameter
Max
Units
VR
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
1200
V
A
IF @ TC = 100°C
8
130
IFSM
IFRM
32
PD @ TC = 25°C
73.5
W
PD @ TC = 100°C
29
TJ
TSTG
- 55 to 150
°C
Storage Temperature Range
1
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HFA16PA120C
Bulletin PD-2.361 rev. B 05/01
Electrical Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max Units Test Conditions
VBR
VFM
Cathode Anode Breakdown 1200
Voltage
-
-
V
IR = 100µA
Max. Forward Voltage
-
2.6 3.3
3.4 4.3
2.4 3.1
0.31 10
135 1000
V
IF = 8.0A
-
IF = 16A
-
-
-
-
-
IF = 8.0A, TJ = 125°C
VR = VR Rated
IRM
Max. Reverse Leakage
Current
µA
TJ = 125°C, VR = 0.8 x VR RatedD R
CT
LS
Junction Capacitance
Series Inductance
11
20
-
pF
nH
VR = 200V
Rated
8.0
Measured lead to lead 5mm from pkg
body
Dynamic Recovery Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max Units Test Conditions
t
t
t
Reverse Recovery Time
-
-
-
-
-
-
-
-
-
28
63
-
ns
IF = 1.0A, dif/dt = 200A/µs, VR = 30V
rr
95
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
IF = 8.0A
rr1
rr2
106 160
4.5 8.0
VR = 200V
IRRM1
IRRM2
Peak Recovery Current
A
di /dt = 200A/µs
f
6.2
11
Q
Q
Reverse Recovery Charge
140 380 nC
335 880
rr1
rr2
di(rec)M /dt1 Peak Rate of Recovery
di(rec)M /dt2 Current During t
133
85
-
-
A/µs
b
Thermal - Mechanical Characteristics
Parameter
Min
Typ
Max
Units
T
lead
!
Lead Temperature
-
-
300
°C
RthJC
RthJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heat Sink
Weight
-
-
-
1.7
40
-
k/W
-
-
"
$
RthCS
Wt
0.25
6.0
0.21
-
-
-
g
-
-
(oz)
Mounting Torque
6.0
5.0
12
10
Kg-cm
lbf•in
-
!
0.063 in. from Case (1.6mm) for 10 sec
"#Typical Socket Mount
Mounting Surface, Flat, Smooth and Greased
$
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2
HFA16PA120C
Bulletin PD-2.361 rev. B 05/01
100
10
1
1000
100
10
T
= 150˚C
125˚C
J
100˚C
1
0.1
0.01
25˚C
0
300
600
900
1200
Reverse Voltage-VR(V)
Fig.2-Typ. Values Of Reverse Current
specified)
Vs. Reverse Voltage
100
10
1
T
= 25˚C
J
T
T
T
= 150˚C
= 125˚C
J
J
J
=
25˚C
0
2
4
6
8
10
1
10
100
1000
10000
Forward Voltage Drop-VFM (V)
Reverse Voltage-VR (V)
Fig.3-Typical Junction Capacitance
Fig.1-Max. Forward Voltage Drop Characteristics
Vs. Reverse Voltage
10
D = 0.50
D = 0.20
1
D = 0.10
D = 0.05
D = 0.02
P
DM
t
1
t
D = 0.01
Single Pulse
(Thermal Resistance)
0.1
2
Notes:
1. Duty factor D = t1/ t 2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1,Rectangular Pulse Duration (Seconds)
Fig.4-Max. Thermal Impedance ZthJC Characteristics
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3
HFA16PA120C
Bulletin PD-2.361 rev. B 05/01
20
16
12
8
160
140
120
100
80
VR= 160V
TJ= 125˚C
IF = 8 A
IF = 4 A
TJ
= 25˚C
IF = 8 A
IF = 4 A
60
4
40
V
= 160V
= 125˚C
R
T
J
T
= 25˚C
J
0
100
20
100
1000
1000
di F /dt (A/µs)
di F /dt (A/µs)
Fig.5-Typical Reverse Recovery
Vs. dif/dt
Fig.6-Typical Recovery Current
Vs. dif/dt
1200
1000
800
600
400
200
0
1000
100
10
V
= 160V
= 125˚C
= 25˚C
R
IF = 8 A
IF = 4 A
T
J
T
J
IF = 8 A
IF = 4 A
V
= 160V
R
T
J
= 125˚C
T
J
= 25˚C
100
1000
100
1000
di F /dt (A/µs)
di F /dt (A/µs)
Fig.8-TypicalStoredCharge vs.dif/dt
Fig.7-Typical di(REC) M/dt vs.dif/dt
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4
HFA16PA120C
Bulletin PD-2.361 rev. B 05/01
Reverse Recovery Circuit
V
= 200V
R
0.01
Ω
L = 70µH
D.U.T.
D
di F /dt
dif/dt
ADJUST
IRFP250
G
S
Fig. 9- Reverse Recovery Parameter Test Circuit
3
t
rr
I
F
t
t
a
b
0
4
Q
rr
2
I
0.5
di(rec)M/dt
I
RRM
RRM
5
0.75 I
RRM
1
di /dt
F
1. di /dt - Rate of change of current through zero
F
4. Q - Area under curve defined by t
rr
rr
crossing
and I
RRM
t
x I
2
rr
RRM
Q
=
2. I
- Peak reverse recovery current
rr
RRM
3. t - Reverse recovery time measured from zero
5. di
/ dt - Peak rate of change of
rr
(rec) M
crossing point of negative going I to point where
current during t portion of t
F
RRM
b
rr
a line passing through 0.75 I
extrapolated to zero current
and 0.50 I
RRM
Fig. 10 - Reverse Recovery Waveform and Definitions
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5
HFA16PA120C
Bulletin PD-2.361 rev. B 05/01
Outline Table
3. 65 (0.144)
3.55 (0.139)
5.30 (0.209)
4.70 ( 0.185)
DIA.
15.90 (0.626)
15.30 (0.602)
2.5 ( 0.098)
1.5 ( 0.059)
5. 70 (0.225)
5.30 ( 0.208)
2
20.30 (0.800)
19.70 (0.775)
5.50 ( 0.217)
4. 50 (0.177)
(2 PLCS.)
1
2
3
1
3
14. 80 ( 0.583)
14.20 (0.559)
4. 30 (0.170)
3. 70 (0.145)
2. 20 (0.087)
MAX.
2.40 (0.095)
MAX.
1. 40 (0.056)
1. 00 (0.039)
0.80 ( 0.032)
0. 40 (0.213)
10. 94 ( 0.430)
10.86 (0.427)
Conforms to JEDEC Outline TO-247AC
Dimensions in millimeters and inches
Ordering Information Table
Device Code
HF
A
16 PA 120
C
2
4
5
1
3
6
1
2
-
-
Hexfred Family
Process Designator A
B
= subs. elec. irrad.
= subs. Platinum
3
4
5
6
-
-
-
-
Current Rating
Package Outline
Voltage Rating
Configuration
(16 = 16A)
(PA = TO-247, 3 pins)
(120= 1200V)
(C = Center Tap Common Cathode)
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6
HFA16PA120C
Bulletin PD-2.361 rev. B 05/01
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 05/01
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7
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