HFA25PB60PBF [INFINEON]
ultrafast, soft recovery diode; 超快,软恢复二极管型号: | HFA25PB60PBF |
厂家: | Infineon |
描述: | ultrafast, soft recovery diode |
文件: | 总6页 (文件大小:208K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 95684A
HFA25PB60PbF
Ultrafast, Soft Recovery Diode
HEXFREDTM
BASE
CATHODE
VR = 600V
Features
Ultrafast Recovery
Ultrasoft Recovery
Very Low IRRM
VF(typ.)* = 1.3V
4
I
F(AV) = 25A
Qrr (typ.)= 112nC
RRM = 10A
Very Low Qrr
Specified at Operating Conditions
Lead-Free
Benefits
Reduced RFI and EMI
Reduced Power Loss in Diode and Switching
Transistor
2
I
trr(typ.) = 23ns
3
1
ANODE
2
CATHODE
di(rec)M/dt (typ.) = 250A/µs
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
Description
International Rectifier's HFA25PB60 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 600 volts and 25 amps continuous current, the HFA25PB60 is
especially well suited for use as the companion diode for IGBTs and MOSFETs.
In addition to ultra fast recovery time, the HEXFRED product line features
extremely low values of peak recovery current (IRRM) and does not exhibit any
TO-247AC (Modified)
tendency to "snap-off" during the tb portion of recovery. The HEXFRED features
combine to offer designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA25PB60 is ideally suited for applications in
power supplies and power conversion systems (such as inverters), motor
drives, and many other similar applications where high speed, high efficiency is
needed.
Absolute Maximum Ratings
Parameter
Max
Units
VR
Cathode-to-Anode Voltage
600
V
IF @ TC = 25°C
IF @ TC = 100°C
IFSM
Continuous Forward Current
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
25
225
100
151
60
A
IFRM
PD @ TC = 25°C
W
C
PD @ TC = 100°C Maximum Power Dissipation
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
* 125°C
www.irf.com
1
11/2/04
HFA25PB60PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max Units
Test Conditions
VBR
VFM
Cathode Anode Breakdown Voltage
600
V
1.7
V
IR = 100µA
1.3
IF = 25A
See Fig. 1
Max Forward Voltage
1.5 2.0
1.3 1.7
IF = 50A
IF = 25A, TJ = 125°C
See Fig. 2
1.5
20
VR = VR Rated
IRM
Max Reverse Leakage Current
µA
600 2000
55 100
TJ = 125°C, VR = 0.8 x VR RatedD Rated
See Fig. 3
VR = 200V
CT
LS
Junction Capacitance
Series Inductance
pF
nH
Measured lead to lead 5mm from
package body
12
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Reverse Recovery Time
See Fig. 5 & 10
Min Typ Max Units
23
Test Conditions
IF = 1.0A, dif/dt = 200A/µs, VR = 30V
TJ = 25°C
trr
trr1
50
75
ns
trr2
105 160
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
IF = 25A
IRRM1
IRRM2
Qrr1
Qrr2
Peak Recovery Current
See Fig. 6 & 10
4.5
8.0
10
15
A
VR = 200V
Reverse Recovery Charge
See Fig. 7 & 10
112 375
420 1200
250
160
nC
dif/dt = 200A/µs
di(rec)M/dt1 Peak Rate of Fall of Recovery Current
See Fig. 8 & 10
A/µs
di(rec)M/dt2 During tb
Thermal - Mechanical Characteristics
Parameter
Min
Typ
Max
Units
Tlead
R
Lead Temperature
6.0
0.25
6.0
300
0.83
40
°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heat Sink
JC
th
K/W
R
JA
th
th
R
12
CS
g
Weight
Wt
0.21
(oz)
Kg-cm
lbfin
Mounting Torque
5.0
10
0.063 in. from Case (1.6mm) for 10 sec
Typical Socket Mount
Mounting Surface, Flat, Smooth and Greased
2
www.irf.com
HFA25PB60PbF
10000
1000
100
10
100
10
1
T = 150°C
J
T = 125°C
J
1
T = 150°C
J
0.1
T = 25°C
J
T = 125°C
J
T = 25°C
J
0.01
0
100
200
300
400
500
600
Reverse Voltage - V (V)
R
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
A
1000
T = 25°C
J
100
0.6
1.0
1.4
1.8
2.2
2.6
Forward Voltage Drop - V
(V)
FM
Fig. 1 - Maximum Forward Voltage Drop
10
1
10
100
1000
vs. Instantaneous Forward Current
Reverse Voltage - V (V)
R
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
1
D = 0.50
0.20
0.10
0.05
0.1
P
2
DM
t
1
0.02
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2. Peak T = P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
3
www.irf.com
HFA25PB60PbF
140
120
100
80
30
25
20
15
10
5
VR= 200V
TJ = 125°C
TJ = 25°C
I
I
= 50A
= 25A
F
F
I
= 10A
F
I
I
= 50A
= 25A
= 10A
F
F
I
F
60
40
20
VR= 200V
TJ = 125°C
TJ = 25°C
0
100
0
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 6 - Typical Recovery Current vs. dif/dt
Fig. 5 - Typical Reverse Recovery vs. dif/dt
1400
10000
VR= 200V
TJ = 125°C
TJ = 25°C
VR= 200V
TJ = 125°C
TJ = 25°C
1200
I
= 50A
= 25A
= 10A
F
1000
800
600
400
200
0
I
I
= 50A
= 25A
= 10A
F
F
F
I
I
F
F
I
1000
100
100
100
1000
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 7 - Typical Stored Charge vs. dif/dt
Fig. 8 - Typical di(rec)M/dt vs. dif/dt
4
www.irf.com
HFA25PB60PbF
3
t
rr
I
F
t
t
a
b
0
REVERSE RECOVERY CIRCUIT
4
Q
rr
V
= 200V
2
R
I
0.5
RRM
I
RRM
5
di(rec)M/dt
Ω
0.01
0.75 I
RRM
L = 70µH
1
di /dt
f
D.U.T.
4. Qrr - Area under curve defined by trr
1. dif/dt - Rate of change of current
through zero crossing
D
and IRRM
dif/dt
trr X IRRM
ADJUST
IRFP250
G
Qrr
=
2. IRRM - Peak reverse recovery current
2
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
S
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and
Fig. 9 - Reverse Recovery Parameter Test
Definitions
Circuit
5
www.irf.com
HFA25PB60PbF
Conforms to JEDEC Outline TO-247AC MODIFIED
Dimensions in millimeters and inches
Note: Marking "P" indicates Lead-Free
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.11/04
6
www.irf.com
相关型号:
HFA25TB60STRL
Rectifier Diode, 1 Phase, 1 Element, 25A, 600V V(RRM), Silicon, SMD-220, D2PAK-3
VISHAY
©2020 ICPDF网 联系我们和版权申明