HFA25PB60PBF [INFINEON]

ultrafast, soft recovery diode; 超快,软恢复二极管
HFA25PB60PBF
型号: HFA25PB60PBF
厂家: Infineon    Infineon
描述:

ultrafast, soft recovery diode
超快,软恢复二极管

整流二极管 局域网 超快软恢复二极管 快速软恢复二极管
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PD - 95684A  
HFA25PB60PbF  
Ultrafast, Soft Recovery Diode  
HEXFREDTM  
BASE  
CATHODE  
VR = 600V  
Features  
• Ultrafast Recovery  
• Ultrasoft Recovery  
• Very Low IRRM  
VF(typ.)* = 1.3V  
4
I
F(AV) = 25A  
Qrr (typ.)= 112nC  
RRM = 10A  
• Very Low Qrr  
• Specified at Operating Conditions  
• Lead-Free  
Benefits  
• Reduced RFI and EMI  
• Reduced Power Loss in Diode and Switching  
Transistor  
2
I
trr(typ.) = 23ns  
3
1
ANODE  
2
CATHODE  
di(rec)M/dt (typ.) = 250A/µs  
• Higher Frequency Operation  
• Reduced Snubbing  
• Reduced Parts Count  
Description  
International Rectifier's HFA25PB60 is a state of the art ultra fast recovery  
diode. Employing the latest in epitaxial construction and advanced processing  
techniques it features a superb combination of characteristics which result in  
performance which is unsurpassed by any rectifier previously available. With  
basic ratings of 600 volts and 25 amps continuous current, the HFA25PB60 is  
especially well suited for use as the companion diode for IGBTs and MOSFETs.  
In addition to ultra fast recovery time, the HEXFRED product line features  
extremely low values of peak recovery current (IRRM) and does not exhibit any  
TO-247AC (Modified)  
tendency to "snap-off" during the tb portion of recovery. The HEXFRED features  
combine to offer designers a rectifier with lower noise and significantly lower  
switching losses in both the diode and the switching transistor. These HEXFRED  
advantages can help to significantly reduce snubbing, component count and  
heatsink sizes. The HEXFRED HFA25PB60 is ideally suited for applications in  
power supplies and power conversion systems (such as inverters), motor  
drives, and many other similar applications where high speed, high efficiency is  
needed.  
Absolute Maximum Ratings  
Parameter  
Max  
Units  
VR  
Cathode-to-Anode Voltage  
600  
V
IF @ TC = 25°C  
IF @ TC = 100°C  
IFSM  
Continuous Forward Current  
Continuous Forward Current  
Single Pulse Forward Current  
Maximum Repetitive Forward Current  
Maximum Power Dissipation  
25  
225  
100  
151  
60  
A
IFRM  
PD @ TC = 25°C  
W
C
PD @ TC = 100°C Maximum Power Dissipation  
TJ  
Operating Junction and  
-55 to +150  
TSTG  
Storage Temperature Range  
* 125°C  
www.irf.com  
1
11/2/04  
HFA25PB60PbF  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min Typ Max Units  
Test Conditions  
VBR  
VFM  
Cathode Anode Breakdown Voltage  
600 ––– –––  
V
1.7  
V
IR = 100µA  
––– 1.3  
IF = 25A  
See Fig. 1  
Max Forward Voltage  
––– 1.5 2.0  
––– 1.3 1.7  
IF = 50A  
IF = 25A, TJ = 125°C  
See Fig. 2  
––– 1.5  
20  
VR = VR Rated  
IRM  
Max Reverse Leakage Current  
µA  
––– 600 2000  
––– 55 100  
TJ = 125°C, VR = 0.8 x VR RatedD Rated  
See Fig. 3  
VR = 200V  
CT  
LS  
Junction Capacitance  
Series Inductance  
pF  
nH  
Measured lead to lead 5mm from  
package body  
––– 12 –––  
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Reverse Recovery Time  
See Fig. 5 & 10  
Min Typ Max Units  
––– 23 –––  
Test Conditions  
IF = 1.0A, dif/dt = 200A/µs, VR = 30V  
TJ = 25°C  
trr  
trr1  
––– 50  
75  
ns  
trr2  
––– 105 160  
TJ = 125°C  
TJ = 25°C  
TJ = 125°C  
TJ = 25°C  
TJ = 125°C  
TJ = 25°C  
TJ = 125°C  
IF = 25A  
IRRM1  
IRRM2  
Qrr1  
Qrr2  
Peak Recovery Current  
See Fig. 6 & 10  
––– 4.5  
––– 8.0  
10  
15  
A
VR = 200V  
Reverse Recovery Charge  
See Fig. 7 & 10  
––– 112 375  
––– 420 1200  
––– 250 –––  
––– 160 –––  
nC  
dif/dt = 200A/µs  
di(rec)M/dt1 Peak Rate of Fall of Recovery Current  
See Fig. 8 & 10  
A/µs  
di(rec)M/dt2 During tb  
Thermal - Mechanical Characteristics  
Parameter  
Min  
Typ  
Max  
Units  
Tlead  
R

Lead Temperature  
––––  
––––  
––––  
––––  
––––  
––––  
6.0  
––––  
––––  
––––  
0.25  
6.0  
300  
0.83  
40  
°C  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Case to Heat Sink  
JC  
th  
K/W  
R
‚
JA  
th  
th  
R
ƒ
––––  
––––  
––––  
12  
CS  
g
Weight  
Wt  
0.21  
––––  
––––  
(oz)  
Kg-cm  
lbf•in  
Mounting Torque  
5.0  
10  

‚
0.063 in. from Case (1.6mm) for 10 sec  
Typical Socket Mount  
ƒ Mounting Surface, Flat, Smooth and Greased  
2
www.irf.com  
HFA25PB60PbF  
10000  
1000  
100  
10  
100  
10  
1
T = 150°C  
J
T = 125°C  
J
1
T = 150°C  
J
0.1  
T = 25°C  
J
T = 125°C  
J
T = 25°C  
J
0.01  
0
100  
200  
300  
400  
500  
600  
Reverse Voltage - V (V)  
R
Fig. 2 - Typical Reverse Current vs. Reverse  
Voltage  
A
1000  
T = 25°C  
J
100  
0.6  
1.0  
1.4  
1.8  
2.2  
2.6  
Forward Voltage Drop - V  
(V)  
FM  
Fig. 1 - Maximum Forward Voltage Drop  
10  
1
10  
100  
1000  
vs. Instantaneous Forward Current  
Reverse Voltage - V (V)  
R
Fig. 3 - Typical Junction Capacitance vs.  
Reverse Voltage  
1
D = 0.50  
0.20  
0.10  
0.05  
0.1  
P
2
DM  
t
1
0.02  
0.01  
t
2
SINGLE PULSE  
(THERMAL RESPONSE)  
Notes:  
1. Duty factor D = t / t  
1
2. Peak T = P  
x Z  
+ T  
C
J
DM  
thJC  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t , Rectangular Pulse Duration (sec)  
1
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics  
3
www.irf.com  
HFA25PB60PbF  
140  
120  
100  
80  
30  
25  
20  
15  
10  
5
VR= 200V  
TJ = 125°C  
TJ = 25°C  
I
I
= 50A  
= 25A  
F
F
I
= 10A  
F
I
I
= 50A  
= 25A  
= 10A  
F
F
I
F
60  
40  
20  
VR= 200V  
TJ = 125°C  
TJ = 25°C  
0
100  
0
100  
1000  
1000  
di /dt - (A/µs)  
f
di /dt - (A/µs)  
f
Fig. 6 - Typical Recovery Current vs. dif/dt  
Fig. 5 - Typical Reverse Recovery vs. dif/dt  
1400  
10000  
VR= 200V  
TJ = 125°C  
TJ = 25°C  
VR= 200V  
TJ = 125°C  
TJ = 25°C  
1200  
I
= 50A  
= 25A  
= 10A  
F
1000  
800  
600  
400  
200  
0
I
I
= 50A  
= 25A  
= 10A  
F
F
F
I
I
F
F
I
1000  
100  
100  
100  
1000  
1000  
di /dt - (A/µs)  
f
di /dt - (A/µs)  
f
Fig. 7 - Typical Stored Charge vs. dif/dt  
Fig. 8 - Typical di(rec)M/dt vs. dif/dt  
4
www.irf.com  
HFA25PB60PbF  
3
t
rr  
I
F
t
t
a
b
0
REVERSE RECOVERY CIRCUIT  
4
Q
rr  
V
= 200V  
2
R
I
0.5  
RRM  
I
RRM  
5
di(rec)M/dt  
0.01  
0.75 I  
RRM  
L = 70µH  
1
di /dt  
f
D.U.T.  
4. Qrr - Area under curve defined by trr  
1. dif/dt - Rate of change of current  
through zero crossing  
D
and IRRM  
dif/dt  
trr X IRRM  
ADJUST  
IRFP250  
G
Qrr  
=
2. IRRM - Peak reverse recovery current  
2
3. trr - Reverse recovery time measured  
from zero crossing point of negative  
going IF to point where a line passing  
through 0.75 IRRM and 0.50 IRRM  
extrapolated to zero current  
S
5. di(rec)M/dt - Peak rate of change of  
current during tb portion of trr  
Fig. 10 - Reverse Recovery Waveform and  
Fig. 9 - Reverse Recovery Parameter Test  
Definitions  
Circuit  
5
www.irf.com  
HFA25PB60PbF  
Conforms to JEDEC Outline TO-247AC MODIFIED  
Dimensions in millimeters and inches  
Note: Marking "P" indicates Lead-Free  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information.11/04  
6
www.irf.com  

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