HFA40HF120CPBF [INFINEON]
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| 型号： | HFA40HF120CPBF |
| 厂家： | 
Infineon |
| 描述： | 暂无描述 二极管 软恢复二极管 |
| 文件： | 总5页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-20376
HFA40HF120
Ultrafast, Soft Recovery Diode
HEXFREDTM
(ISOLATEDBASE)
VR = 1200V
VF = 3.1V
Features
• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of Recovery Parameters
• Hermetic
Qrr = 510 nC
• Surface Mount
di(rec)M/dt = 350A/µs
CATHODE
ANODE
Description
HEXFREDTM diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems.
An extensive characterization of the recovery behavior
for different values of current, temperature and di/dt
simplifies the calculations of losses in the operating
conditions. The softness of the recovery eliminates the
need for a snubber in most applications. These devices
are ideally suited for power converters, motors drives and
other applications where switching losses are significant
portion of the total losses.
SMD -1
Absolute Maximum Ratings (per Leg)
Parameter
D.C. Reverse Voltage
Max.
1200
Units
V
VR
IF @ TC = 100°C
Continuous Forward Current
11
A
IFSM @ TC = 25°C Single Pulse Forward Current
190
PD @ TC = 25°C
Maximum Power Dissipation
Operating Junction and
83
W
TJ
-55 to +150
°C
TSTG
Storage Temperature Range
Thermal - Mechanical Characteristics
Parameter
Junction-to-Case, Single Leg Conducting
Weight
Typ.
—
Max.
1.5
Units
RθJC
°C/W
g
2.6
—
Note: D.C. = 50% rect. wave
1/2 sine wave, 60 Hz , P.W. = 8.33 ms
www.irf.com
1
6/30/99
HFA40HF120
Electrical Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
VBR
VFM
Cathode Anode Breakdown Voltage
Max Forward Voltage
1200
—
—
—
—
—
—
—
28
2.8
—
3.1
4.0
2.7
10
V
IR = 100µA
IF = 11A
—
V
IF = 22A
See Fig. 1
—
IF = 11A, TJ = 125°C
VR = VR Rated
IRM
Max Reverse Leakage Current
—
µA
See Fig. 2
See Fig. 3
—
1.0
42
mA TJ = 125°C, VR = 960V
pF VR = 200V
CT
LS
Junction Capacitance
Series Inductance
—
—
—
nH Measured from center of bond pad to
end of anode bonding wire
Dynamic Recovery Characteristics (per Leg) @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Test Conditions
trr1
Reverse Recovery Time
—
—
—
—
—
—
—
—
80 120
130 195
7.25 10.9
10.2 15.3
340 510
825 1240
230 350
160 240
ns TJ = 25°C See Fig.
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C
trr2
5
IF = 11A
VR = 200V
IRRM1
IRRM2
Qrr1
Qrr2
Peak Recovery Current
A
6
Reverse Recovery Charge
nC
7
dif/dt = 200A/µs
di(rec)M/dt1 Peak Rate of Fall of Recovery Current
di(rec)M/dt2 During tb
A/µs
8
Legend:
1 - Cathode
2 - N/C
3 - Anode
IR Case Style SMD-1
2
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HFA40HF120
100
10
1
1 0 0 0 0
1 0 0 0
1 0 0
1 0
T
=
=
150°C
125°C
J
T
J
1
T
T
=
25°C
J
J
0.1
T
= 150°C
= 125°C
J
=
-55°C
0.01
0. 001
T
J
T
=
25°C
J
0
3 0 0
6 0 0
9 0 0
1 2 0 0
Reverse Voltage - V
(V)
R
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
A
1 0 0 0
T
= 25°C
J
1 0 0
0.0
2.0
4.0
6.0
8.0
10.0
Forward Voltage Drop - V
(V)
FM
Fig. 1 - Maximum Forward Voltage Drop
1 0
1
1 0
1 0 0
1 0 0 0
vs. Instantaneous Forward Current
Reverse Voltage - V (V)
R
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
10
1
D = 0.50
0.20
0.10
P
DM
0.05
0.1
t
1
0.02
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
J
x
Z
+ T
thJC C
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics
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3
HFA40HF120
250
100
10
1
I
= 22A
= 11A
F
F
I
200
150
100
50
I
= 5.5A
I
I
I
= 22A
= 11A
= 5.5A
F
F
F
F
VR
= 2 0 0 V
VR = 200V
TJ = 125°C
TJ = 25°C
TJ = 1 2 5 °C
TJ = 2 5 °C
0
100
1000
100
1000
d i /dt - (A /µs)
f
di /dt - (A/µs)
f
Fig. 5 - Typical Reverse Recovery vs. dif/dt,
Fig. 6 - Typical Recovery Current vs. dif/dt,
10000
10000
VR = 200V
TJ = 125°C
TJ = 25°C
I
I
I
= 22 A
= 11A
= 5 .5A
F
F
F
1000
1000
100
I
I
I
= 5.5A
= 11A
= 22A
F
F
F
VR
= 2 0 0 V
TJ = 1 2 5 °C
TJ = 2 5 °C
100
10
100
100
1000
1000
d i /dt - (A /µs)
di /dt - (A/µs)
f
f
Fig. 7 - Typical Stored Charge vs. dif/dt
Fig. 8 - Typical di(rec)M/dt vs. dif/dt
4
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HFA40HF120
3
t
rr
I
F
t
t
a
b
0
RE VERS E RECO VE RY CIRCUIT
4
Q
rr
V
= 200V
2
R
I
0.5
I
R R M
R RM
5
d i(rec)M /dt
I
R R M
Ω
0.01
0.75
L
= 70µ H
1
di /dt
f
D .U .T.
4. Qrr - Area under curve defined by trr
1. dif/dt - Rate of change of current
through zero crossing
D
IR FP 250
and IRRM
dif/dt
trr X IRRM
A D JU S T
G
Qrr
=
2. IRRM - Peak reverse recovery current
2
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
S
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and
Fig. 9 - Reverse Recovery Parameter Test
Definitions
Circuit
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice.
6/99
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5
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