HYM324000GD-60 [INFINEON]
4M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE; 4M ×32位动态RAM模块小尺寸内存模块
| 型号： | HYM324000GD-60 |
| 厂家： | 
Infineon |
| 描述： | 4M x 32-Bit Dynamic RAM Module SMALL OUTLINE MEMORY MODULE |
| 文件： | 总6页 (文件大小：30K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
4M × 32-Bit Dynamic RAM Module
HYM 324000GD-50/-60
SMALL OUTLINE MEMORY MODULE
Preliminary Information
• 4 0194 034 words by 32-bit organization
• Fast access and cycle time
50 ns access time
95 ns cycle time (-50 version)
60 ns access time
110 ns cycle time (-60 version)
• Fast page mode capability with
35 ns cycle time (-50 version)
40 ns cycle time (-60 version)
• Single + 3.3 V (± 0.3 V) supply
• Low power dissipation
max. 1008 mW active (-50 version)
max. 864 mW active (-60 version)
LVCMOS – 1.8 mW standby
TTL
– 14.4 mW standby
• CAS-before-RAS refresh, RAS-only-refresh. Self Refresh
• 2 decoupling capacitors mounted on substrate
• All inputs, outputs and clock fully TTL compatible
• 72 pin, dual read-out, one bank, Small Outline DIMM Module
• Utilizes two 4M × 16 -DRAMs (HYB 3165160T)
• 4096 refresh cycles / 64 ms
• Gold contact pad
Semiconductor Group
181
11.94
HYM324000GD-50/-60
4M x 32 SO-DIMM
The HYM 324000GD -50/-60 is a 16 MByte DRAM module organized as 4 194 304 words by 32-bit
in a 72-pin, dual read-out, small outline package comprising two HYB 3165160T 4M × 16 DRAMs
in 500 mil wide TSOPII-54 - packages mounted together with two 0.2 µF ceramic decoupling
capacitors on a PC board. Each HYB 3165160T is described in the data sheet and is fully
electrically tested and processed according to Siemens standard quality procedure prior to module
assembly. After assembly onto the board, a further set of electrical tests is performed.
The density and speed of the module can be detected by the use of presence detect pins.
These modules are ideal for portable systems applications where high memory capacity is needed.
Ordering Information
Type
Ordering Code
on request
Package
Descriptions
HYM 324000GD -50
HYM 324000GD -60
L-DIM-72-1
L-DIM-72-1
50 ns DRAM module
60 ns DRAM module
on request
Pin Names
A0-A11
Row Address Input
Column Address Inputs
Data Input/Output
Row Address Strobe
Column Address Strobe
Read / Write Input
Power (+3.3 Volt)
Ground
A0-A9
DQ0 - DQ31
RAS0, RAS2
CAS0 - CAS3
WE
Vcc
Vss
PD1 - PD7
N.C.
Presence Detect Pins
No Connection
Presence-Detect and ID-pin Thruth Table *):
Module
PD1 PD2 PD3 PD4 PD5 PD6 PD7
HYM 324000GD -50
HYM 324000GD -60
NC
NC
NC
NC
VSS NC
VSS NC
VSS VSS NC
NC NC NC
note: PD1 .. PD4 : configuration
PD5 .. PD6 : speed
PD7
: refresh mode (NC = normal refresh)
*) according to JEDEC letter ballot JC-42.5-95 Item #646/651
Semiconductor Group
182
HYM324000GD-50/-60
4M x 32 SO-DIMM
Pin Configuration
PIN
Name
PIN
NAME
PIN
NAME
PIN
NAME
1
VSS
DQ1
DQ3
DQ5
DQ7
PD1
A1
37
39
41
43
45
47
49
51
53
55
57
59
61
63
65
67
69
71
DQ16
VSS
2
DQ0
DQ2
DQ4
DQ6
VCC
A0
38
40
42
44
46
48
50
52
54
56
58
60
62
64
66
68
70
72
DQ17
CAS0
CAS3
RAS0
NC
Pin1
Pin2
3
4
5
CAS2
CAS1
NC
6
7
8
9
10
12
14
16
18
20
22
24
26
28
30
32
34
36
11
13
15
17
19
21
23
25
27
29
31
33
35
WRITE
DQ18
DQ20
DQ22
NC
NC
A2
DQ19
DQ21
DQ23
DQ24
DQ26
DQ27
DQ29
DQ31
PD2
A3
A4
A5
A6
A10
DQ8
DQ10
DQ12
DQ14
A11
NC
DQ25
DQ28
VCC
DQ30
NC
DQ9
DQ11
DQ13
A7
VCC
A9
Pin71
Pin72
A8
PD3
PD4
NC
PD5
RAS2
NC
PD6
DQ15
PD7
VSS
Front Side
Back Side
RAS0
RAS
I/O1-I/O8
DQ0-DQ7
CAS0
CAS1
UCAS
LCAS
OE
I/O9-I/O16
DQ8-DQ15
D1
RAS2
CAS2
CAS3
RAS
UCAS
LCAS
OE
I/O1-I/O8
DQ16-DQ23
DQ24-DQ31
I/O9-I/O16
D2
WE
D1,D2
D1,D2
A0-A11
VCC
C1,C2
D1,D2
Block Diagram
VSS
Semiconductor Group
183
HYM324000GD-50/-60
4M x 32 SO-DIMM
Absolute Maximum Ratings 1)
Operating temperature range..............................................................................................0 to 70 ˚C
Storage temperature range.........................................................................................– 55 to 150 ˚C
Soldering temperature.............................................................................................................260 ˚C
Soldering time..............................................................................................................................10 s
Input/output voltage..................................................................................-0.5 to min (Vcc+0.5,4.6) V
Power supply voltage....................................................................................................-0.5V to 4.6 V
Power dissipation......................................................................................................................1.0 W
Data out current (short circuit)..................................................................................................50 mA
DC Characteristics
TA = 0 to 70 ˚C, VSS = 0 V, VCC = 3 V ± 0.3 V
Parameter
Symbol
Limit Values
Unit Note
min.
max.
Vcc+0.3
0.8
Input high voltage
Input low voltage
VIH
VIL
2.0
V
V
V
2)
2)
– 0.3
2.4
Output high voltage (LVTTL)
VOH
–
Output „H“ level voltage (Iout = -2mA)
Output low voltage (LVTTL)
Output „L“level voltage (Iout = +2mA)
VOL
VOH
VOL
II(L)
–
0.4
V
Output high voltage (LVCMOS)
Output „H“ level voltage (Iout = -100uA)
Vcc-0.2 -
V
6)
6)
Ouput low voltage (LVCMOS)
Output „L“ level voltage (Iout = +100uA)
-
0.2
V
Input leakage current,any input
(0 V < Vin < Vcc , all other pins = 0 V
– 10
– 10
10
10
µA
µA
Output leakage current
(DO is disabled, 0 V < Vout < Vcc )
IO(L)
ICC1
Average Vcc supply current:
-50 ns version
-60 ns version
–
–
280
240
mA 3) 4) 5)
mA
(RAS, CAS, address cycling: tRC = tRC min.)
Standby Vcc supply current
(RAS=CAS= Vih)
ICC2
ICC3
–
4
mA
–
Average Vcc supply current, during RAS-only
refresh cycles:
-50 ns version
-60 ns version
–
–
280
240
mA 3) 5)
mA
(RAS cycling: CAS = VIH: tRC = tRC min.)
Semiconductor Group
184
HYM324000GD-50/-60
4M x 32 SO-DIMM
DC Characteristics (cont’d)
TA = 0 to 70 ˚C, VSS = 0 V, VCC = 3 V ± 0.3 V
Parameter
Symbol
Limit Values
Unit Note
min.
max.
AverageVcc supply current,
ICC4
during fast page mode:
-50 ns version
-60 ns version
–
–
170
150
mA 3) 4) 5)
mA
(RAS = VIL, CAS, address cycling: tPC=tPC min.)
ICC5
–
400
A
–
Standby Vcc supply current
(RAS=CAS= Vcc-0.2V)
Average Vcc supply current, during CAS-before- ICC6
RAS refresh mode:
-50 ns version
-60 ns version
–
–
280
240
mA 3) 4)
mA
(RAS, CAS cycling: tRC = tRC min.)
ICC7
–
400
A
Self Refresh Current
Average Power Supply Current during Self Refresh.
(CBR cycle with tRAS>TRASSmin, CAS held low,
WE = Vcc-0.2V, Address and Din=Vcc-0.2V or 0.2V)
Semiconductor Group
185
HYM324000GD-50/-60
4M x 32 SO-DIMM
SO-DIMM PACKAGE OUTLINES
56.69
2.6 max
FRONT SIDE
1
71
E
44.45
7.62
R 2.0
1.0 +/- 0.1
8.255
2
72
R 2.0
BACK SIDE
1.0
note:
mechanical key for supply voltage
5 V E = 6.35
3.3V E = 3.175
1.27
Preliminary Drawing
L-DIM-72-1
Semiconductor Group
186
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