IAUC90N10S5N062 [INFINEON]
车规级MOSFET;
| 型号： | IAUC90N10S5N062 |
| 厂家： | 
Infineon |
| 描述： | 车规级MOSFET |
| 文件： | 总10页 (文件大小：779K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IAUC90N10S5N062
OptiMOSTM-5 Power-Transistor
Product Summary
VDS
RDS(on)
ID
100
6.2
90
V
mW
A
Features
PG-TDSON-8
• OptiMOS™ - power MOSFET for automotive applications
• N-channel - Enhancement mode - Normal level
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• Green product (RoHS compliant)
• 100% Avalanche tested
1
1
• Feasible for automatic optical inspection (AOI)
Type
Package
Marking
5N10N062
IAUC90N10S5N062
PG-TDSON-8
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
Continuous drain current1)
I D
T C=25°C, VGS=10V
90
66
A
T C=100°C, VGS=10V
Pulsed drain current1)
I D,pulse
EAS
I AS
T C=25°C
360
112
47
Avalanche energy, single pulse1)
Avalanche current, single pulse
Gate source voltage
I D=45A
mJ
A
-
VGS
-
±20
V
T C=25°C,
T J =175°C
Ptot
Power dissipation
115
W
T j, T stg
Operating and storage temperature
-
-55 ... +175
°C
Rev. 1.0
page 1
2019-07-23
IAUC90N10S5N062
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics1)
K/W
R thJC
Thermal resistance, junction - case
-
-
-
-
-
1.3
50
Thermal resistance, junction -
ambient, leaded
6 cm2 cooling area2)
R thJA
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V(BR)DSS VGS=0V, I D= 1mA
VGS(th) VDS=VGS, I D= 59µA
Drain-source breakdown voltage
Gate threshold voltage
100
2.2
-
-
V
3.0
3.8
VDS=100V, VGS=0V,
T j=25 °C
I DSS
Zero gate voltage drain current
-
-
-
-
1
µA
VDS=100V, VGS=0V,
T j=125°C1)
20
I GSS
VGS=20V, VDS=0V
Gate-source leakage current
-
-
-
-
-
100 nA
mW
R DS(on) VGS=6V, I D=23A
VGS=10 V, I D=45 A
R G
Drain-source on-state resistance
6.5
5.2
1
7.8
6.2
Gate resistance1)
-
W
Rev. 1.0
page 2
2019-07-23
IAUC90N10S5N062
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
2519
403
20.5
6
3275 pF
524
VGS=0 V, VDS=50V,
f =1MHz
31
-
-
-
-
ns
2
VDD=50V, VGS=10V,
I D=90A, R G=3.5W
t d(off)
t f
Turn-off delay time
Fall time
10
8
Gate Charge characteristics1)
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
12
7.6
36
16
11.4
48
nC
Q gd
VDD=50V, I D=45A,
VGS=0 to 10V
Q g
Vplateau
Gate plateau voltage
4.7
-
V
A
Reverse Diode
Diode continous forward current1)
Diode pulse current1)
I S
-
-
-
-
90
T C=25°C
I S,pulse
360
VGS=0V, I F=45A,
T j=25°C
VSD
Diode forward voltage
-
0.9
1.1
V
Reverse recovery time1)
t rr
-
-
47
61
-
-
ns
VR=50V, I F=50A,
diF/dt =100A/µs
Reverse recovery charge1)
Q rr
nC
1) Defined by design. Not subject to production test.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2019-07-23
IAUC90N10S5N062
1 Power dissipation
2 Drain current
Ptot = f(T C); VGS ≥ 6 V
I D = f(T C); VGS ≥ 6 V
125
100
75
50
25
0
100
80
60
40
20
0
0
50
100
150
200
0
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC = f(t p)
I D = f(VDS); T C = 25 °C; D = 0
parameter: t p
parameter: D =t p/T
101
1000
100
10
1 µs
100
10-1
10-2
10-3
0.5
10 µs
100 µs
0.1
150 µs
0.05
0.01
single pulse
1
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
Rev. 1.0
page 4
2019-07-23
IAUC90N10S5N062
5 Typ. output characteristics
I D = f(VDS); T j = 25 °C
parameter: VGS
6 Typ. drain-source on-state resistance
R DS(on) = f(I D); T j = 25 °C
parameter: VGS
15
350
10 V
7 V
6.5 V
5.5 V
5 V
6 V
6.5 V
300
250
200
150
100
50
13
11
9
6 V
5.5 V
5 V
7 V
7
10 V
5
0
0
90
180
ID [A]
270
360
0
1
2
3
4
5
6
7
VDS [V]
7 Typ. transfer characteristics
I D = f(VGS); VDS = 6 V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 45 A; VGS = 10 V
360
270
180
90
12
10
8
-55 °C
25 °C
175 °C
6
4
2
0
-60
-20
20
60
100
140
180
3
4
5
6
7
Tj [°C]
VGS [V]
Rev. 1.0
page 5
2019-07-23
IAUC90N10S5N062
9 Typ. gate threshold voltage
VGS(th) = f(T j); VGS = VDS
parameter: I D
10 Typ. capacitances
C = f(VDS); VGS = 0 V; f = 1 MHz
104
4
3.5
3
Ciss
590 µA
103
102
101
Coss
59 µA
2.5
2
1.5
1
Crss
0
20
40
60
80
100
-60
-20
20
60
100
140
180
Tj [°C]
VDS [V]
11 Typical forward diode characteristics
12 Typ. avalanche characteristics
I AS = f(t AV
IF = f(VSD)
)
parameter: T j
parameter: Tj(start)
103
100
25 °C
102
100 °C
150 °C
10
25 °C
175 °C
101
100
1
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
10
100
1000
VSD [V]
tAV [µs]
Rev. 1.0
page 6
2019-07-23
IAUC90N10S5N062
13 Typical avalanche energy
EAS = f(T j)
14 Drain-source breakdown voltage
VBR(DSS) = f(T j); I D = 1 mA
parameter: I D
116
114
112
110
108
106
104
102
500
10 A
400
300
20 A
200
45 A
100
0
-60
-20
20
60
100
140
180
25
75
125
175
Tj [°C]
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
VGS = f(Q gate); I D = 45 A pulsed
parameter: VDD
10
9
VGS
Qg
8
80 V
7
50 V
20 V
6
5
4
3
2
1
0
Qgate
Qgd
Qgs
0
10
20
30
40
Qgate [nC]
Rev. 1.0
page 7
2019-07-23
IAUC90N10S5N062
PG-TDSON-8: Outline
Footprint
Dimensions in mm
Packaging
Rev. 1.0
page 8
2019-07-23
IAUC90N10S5N062
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© Infineon Technologies AG 2019
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 9
2019-07-23
IAUC90N10S5N062
Revision History
Version
Date
Changes
23.07.2019 Final Data Sheet
Revision 1.0
Rev. 1.0
page 10
2019-07-23
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