IAUS300N08S5N012 [INFINEON]
车规级MOSFET;
| 型号： | IAUS300N08S5N012 |
| 厂家： | 
Infineon |
| 描述： | 车规级MOSFET |
| 文件： | 总9页 (文件大小：331K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IAUS300N08S5N012
OptiMOS™-5 Power-Transistor
Product Summary
VDS
RDS(on)
ID
80
1.2
300
V
mW
A
Features
PG-HSOG-8-1
Tab
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• Ultra low Rds(on)
8
1
Tab
1
8
• 100% Avalanche tested
Type
Package
Marking
PG-HSOG-8-1
A08S5N12
IAUS300N08S5N012
Maximum ratings, at T j=25 °C, unless otherwise specified
T C=25°C, VGS=10V1)
I D
Continuous drain current
300
300
A
T C=100 °C,
VGS=10 V2)
Pulsed drain current2)
I D,pulse
EAS
I AS
T C=25 °C
1200
817
300
±20
375
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
I D=150 A
mJ
A
-
VGS
Ptot
-
V
T C=25 °C
Power dissipation
W
°C
T j, T stg
-
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-
-
-55 ... +175
55/175/56
Rev. 1.2
page 1
2022-05-16
IAUS300N08S5N012
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Thermal characteristics2)
R thJC
Thermal resistance, junction - case
-
-
-
0.4
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
VGS=0 V,
I D=1 mA
Drain-source breakdown voltage2)
V(BR)DSS
80
2.2
-
-
-
V
VGS(th) VDS=VGS, I D=275 µA
Gate threshold voltage
3
1
3.8
20
VDS=50 V, VGS=0 V,
T j=85 °C2)
I GSS
VGS=20 V, VDS=0 V
Gate-source leakage current
-
-
-
-
100 nA
RDS(on) VGS=6 V, I D=75 A
VGS=10 V, I D=100 A
Drain-source on-state resistance
1.3
1.0
1.7
mΩ
1.2
Rev. 1.2
page 2
2022-05-16
IAUS300N08S5N012
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Dynamic characteristics2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
C oss
Crss
t d(on)
t r
-
-
-
-
-
-
-
12500
2000
86
16250 pF
2600
VGS=0 V, VDS=40 V,
f =1 MHz
130
31
-
-
-
-
ns
19
VDD=40 V, VGS=10 V,
I D=100 A, R G=3.5 W
t d(off)
t f
Turn-off delay time
Fall time
69
55
Gate Charge Characteristics2)
Gate to source charge
Gate charge total
Q gs
-
-
-
56
178
4.5
73
231
-
nC
V
VDD=40 V, I D=100 A,
VGS=0 to 10 V
Q g
Vplateau
Gate plateau voltage
Reverse Diode
Diode continous forward current2)
Diode pulse current2)
I S
-
-
-
-
300
A
V
T C=25 °C
I S,pulse
1200
VGS=0 V, I F=100 A,
T j=25 °C
VSD
Diode forward voltage
-
0.9
1.2
Reverse recovery time2)
t rr
-
-
86
-
-
ns
VR=40 V, I F=50A,
diF/dt =100 A/µs
Reverse recovery charge2)
Q rr
177
nC
1) Current is limited by bondwire; with an R thJC = 0.4 K/W the chip is able to carry 400A at 25°C.
2) Defined by design. Not subject to production test.
Rev. 1.2
page 3
2022-05-16
IAUS300N08S5N012
1 Power dissipation
2 Drain current
Ptot = f(T C); VGS ≥ 6 V
I D = f(T C); VGS ≥ 6 V
400
300
200
100
0
350
300
250
200
150
100
50
0
0
50
100
150
200
0
50
100
150
200
TC [°C]
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
Z thJC = f(t p)
I D = f(VDS); T C = 25 °C; D = 0
parameter: t p
parameter: D =t p/T
100
10000
1000
100
10
1 µs
0.5
10 µs
10-1
100 µs
0.1
1 ms
0.05
10-2
0.01
single pulse
10-3
1
0.1
1
10
100
10-6
10-5
10-4
10-3
10-2
10-1
100
VDS [V]
tp [s]
Rev. 1.2
page 4
2022-05-16
IAUS300N08S5N012
5 Typ. output characteristics
I D = f(VDS); T j = 25 °C
parameter: VGS
6 Typ. drain-source on-state resistance
R DS(on) = (I D); T j = 25 °C
parameter: VGS
4
1200
4.5 V
5 V
10 V
6.5 V
3.5
3
1000
800
600
400
200
0
6 V
2.5
2
5.5 V
5.5 V
1.5
1
6 V
6.5 V
5 V
10 V
4.5 V
0.5
0
100
200
300
0
1
2
3
4
5
6
7
ID [A]
VDS [V]
7 Typ. transfer characteristics
I D = f(VGS); VDS = 6V
parameter: T j
8 Typ. drain-source on-state resistance
R DS(on) = f(T j); I D = 100 A; VGS = 10 V
1200
1000
800
600
400
200
0
-55 °C
175 °C
25 °C
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-60
-20
20
60
100
140
180
2
4
6
8
Tj [°C]
VGS [V]
Rev. 1.2
page 5
2022-05-16
IAUS300N08S5N012
9 Typ. gate threshold voltage
VGS(th) = f(T j); VGS = VDS
parameter: I D
10 Typ. capacitances
C = f(VDS); VGS = 0 V; f = 1 MHz
105
4
3.5
3
Ciss
104
103
102
101
2750 µA
Coss
275 µA
2.5
2
1.5
1
Crss
0
20
40
60
80
-60
-20
20
60
100
140
180
Tj [°C]
VDS [V]
11 Typical forward diode characteristicis
12 Typ. avalanche characteristics
I AS = f(t AV
IF = f(VSD)
)
parameter: T j
parameter: Tj(start)
104
103
102
1000
25 °C
100 °C
100
150 °C
25 °C
175 °C
101
100
10
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
10
100
1000
VSD [V]
tAV [µs]
Rev. 1.2
page 6
2022-05-16
IAUS300N08S5N012
13 Typical avalanche energy
EAS = f(T j)
14 Drain-source breakdown voltage
VBR(DSS) = f(T j); I D_typ = 1 mA
parameter: I D
87
86
85
84
83
82
81
80
79
78
77
76
2000
1600
75 A
1200
800
150 A
400
300 A
0
-60
-20
20
60
100
140
180
25
75
125
175
Tj [°C]
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
VGS = f(Q gate); I D = 300 A pulsed
parameter: VDD
10
9
8
7
6
5
4
3
2
1
0
VGS
16 V
Qg
40 V
64 V
Qgate
Qgd
Qgs
0
40
80
120
160
Qgate [nC]
Rev. 1.2
page 7
2022-05-16
IAUS300N08S5N012
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2020
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.2
page 8
2022-05-16
IAUS300N08S5N012
Revision History
Version
Date
Changes
Version 1.0
Version 1.1
Version 1.2
10.04.2018
04.05.2020
16.05.2022
Final Datasheet
Modified package name
Modified diagram 5 (page 5)
Rev. 1.2
page 9
2022-05-16
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