IAUTN06S5N008T [INFINEON]
The IAUTN06S5N008T is a 0,79 mΩ, topside-cooled 60 V MOSFET coming in the TOLT package with Infineon’s leading OptiMOS™ 5 technology. Next to others the device is designed for HV-LV DCDC converter.;
| 型号： | IAUTN06S5N008T |
| 厂家： | 
Infineon |
| 描述： | The IAUTN06S5N008T is a 0,79 mΩ, topside-cooled 60 V MOSFET coming in the TOLT package with Infineon’s leading OptiMOS™ 5 technology. Next to others the device is designed for HV-LV DCDC converter. CD |
| 文件： | 总12页 (文件大小：1541K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IAUTN06S5N008T
Automotive MOSFET
OptiMOS™ 5 Power-Transistor
PG-HDSOP-16-1
16
9
9
Features
• OptiMOS™ power MOSFET for automotive applications
• N-channel – enhancement mode – normal level
• Extended qualification beyond AEC-Q101
• Enhanced electrical testing
16
T
1
8
• Robust design
1
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• RoHS compliant
• 100% avalanche tested
Potential applications
General automotive applications.
Product validation
Qualified for automotive applications. Product validation according to AEC-Q101.
Product Summary
VDS
60
V
RDS(on)
0.79 mΩ
503
ID (chip limited)
A
Type
Package
Marking
IAUTN06S5N008T
PG-HDSOP-16-1
5N06N008
Data Sheet
Please read the Important Notice and Warnings at the end of this document
Rev. 1.01
www.infineon.com/mosfets
2023-04-13
OptiMOS™ 5 Automotive Power MOSFET, 60 V
IAUTN06S5N008T
Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
4
6
Package outline & footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2
Data Sheet
2
Rev. 1.01
2023-04-13
OptiMOS™ 5 Automotive Power MOSFET, 60 V
IAUTN06S5N008T
Maximum ratings
at Tj=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
V GS=10 V, Chip limitation1,2)
V GS=10V, DC current3)
I D
503
350
136
A
Continuous drain current
T a=100 °C, V GS=10 V, R thJA
on top 2,4)
Pulsed drain current2)
I D,pulse
E AS
T C=25 °C, t p= 100 µs
1940
940
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
I D=175 A
mJ
A
I AS
350
–
V GS
±20
V
–
P tot
T j, T stg
–
T C=25 °C
358
W
°C
Power dissipation
-55 ... +175
55/175/56
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
–
–
Data Sheet
3
Rev. 1.01
3
2023-04-13
OptiMOS™ 5 Automotive Power MOSFET, 60 V
IAUTN06S5N008T
Thermal characteristics2)
Parameter
Values
Symbol
Conditions
Unit
min.
typ.
-
max.
R thJC
Thermal resistance, junction - case
Top
-
-
-
-
-
0.42 K/W
Bottom (Pin 1-7)
Bottom (Pin 9-16)
Top
9
-
-
-
-
3
R thJA
2.8
40
Thermal resistance, junction -
ambient4)
Bottom (through PCB)
Electrical characteristics
at Tj=25 °C, unless otherwise specified
Parameter
Values
typ.
Symbol
Conditions
Unit
min.
max.
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
V GS=0 V,
I D=1 mA
V (BR)DSS
V GS(th)
I DSS
60
2.2
–
–
–
3.0
1
V
V DS=V GS, I D=275 µA
2.6
0.1
V DS=60 V, V GS=0 V, T j=25 °C
Zero gate voltage drain current
µA
V DS=60 V, V GS=0 V,
T j=100 °C2)
–
10
100
I GSS
V GS=20 V, V DS=0 V
V GS=7 V, I D=50 A
V GS=10 V, I D=100 A
–
Gate-source leakage current
–
–
–
–
–
100 nA
0.90 mΩ
0.79
R DS(on)
Drain-source on-state resistance
0.72
0.63
1.8
Gate resistance2)
R G
–
Ω
Data Sheet
4
Rev. 1.01
4
2023-04-13
OptiMOS™ 5 Automotive Power MOSFET, 60 V
IAUTN06S5N008T
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Dynamic characteristics2)
C iss
C oss
C rss
t d(on)
t r
Input capacitance
–
–
–
–
–
–
–
15600 20280 pF
V GS=0 V, V DS=30 V, f =1 MHz
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
3200
110
43
4160
165
–
ns
66
–
V DD=30 V, V GS=10 V,
I D=100 A, R G=3.5 Ω
t d(off)
t f
Turn-off delay time
Fall time
115
86
–
–
Gate Charge Characteristics2)
Q gs
Gate to source charge
–
–
–
–
64
36
83 nC
54
Q gd
Gate to drain charge
Gate charge total
V DD=30 V, I D=100 A,
V GS=0 to 10 V
Q g
210
4.1
273
V plateau
Gate plateau voltage
–
V
Reverse Diode
Diode continous forward current2)
I S
T C=25 °C
–
–
–
–
503
A
V
Diode pulse current2)
I S,pulse
T C=25 °C, t p= 100 µs
1940
V SD
V GS=0 V, I F=100 A, T j=25 °C
Diode forward voltage
–
0.82
0.92
Reverse recovery time2)
Reverse recovery charge2)
t rr
–
–
57
64
86 ns
V R=30 V, I F=50A,
di F/dt =100 A/µs
Q rr
128 nC
1) Practically the current is limited by the overall system design including the customer-specific PCB.
2) The parameter is not subject to production testing – specified by design.
3) Current is limited by package.
4) Device on a four-layer 2s2p FR4 PCB with topside cooling. Thermal insulation material is 100 µm thick and has a conductivity of 0.7 W/m/K.
Top surface of heat sink is fixed at ambient temperature. Bottom surface of PCB is left at free convection. Values may vary depending on the
customer-specific design.
Data Sheet
Rev. 1.01
5
5
2023-04-13
OptiMOS™ 5 Automotive Power MOSFET, 60 V
IAUTN06S5N008T
Electrical characteristics diagrams
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≥ 6 V
I D = f(T C); V GS ≥ 6 V
400
300
200
100
0
600
550
500
450
400
Chip limit
DC current
350
300
250
200
150
100
50
0
0
50
100
150
200
25
75
125
TC [°C]
175
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0; parameter: tp
Z thJC = f(t p); parameter: D=tp/T
104
100
1 µs
103
0.5
10 µs
10-1
100 µs
1 ms
102
101
100
0.1
0.05
10-2
0.01
single pulse
10-3
10-6
10-5
10-4
10-3
10-2
10-1
100
10-1
100
101
102
tp [s]
VDS [V]
Data Sheet
6
6
Rev. 1.01
2023-04-13
OptiMOS™ 5 Automotive Power MOSFET, 60 V
IAUTN06S5N008T
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C; parameter: VGS
R DS(on) = f(I D); T j = 25 °C; parameter: VGS
1.4
2200
7 V
10 V
2000
1.3
1.2
1.1
1
5 V
6.5 V
1800
1600
1400
1200
1000
800
6 V
5.5 V
6 V
0.9
0.8
0.7
0.6
0.5
5.5 V
6.5 V
7 V
600
5 V
400
10 V
200
0
0
50
100
150
200
250
300
350
0
1
2
3
ID [A]
VDS [V]
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I D = f(V GS); V DS = 6V: parameter: Tj
R DS(on) = f(T j); parameter: ID, VGS
2200
2000
1800
1600
1400
1200
1000
800
1.4
25 °C
-55 °C
1.2
175 °C
1
VGS=7 V,
ID=50 A
VGS=10 V,
ID=100 A
0.8
0.6
0.4
600
400
200
0
-60
-20
20
60
100
140
180
2.5
3.5
4.5
5.5
6.5
Tj [°C]
VGS [V]
Data Sheet
7
7
Rev. 1.01
2023-04-13
OptiMOS™ 5 Automotive Power MOSFET, 60 V
IAUTN06S5N008T
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS; parameter: I D
C = f(V DS); V GS = 0 V; f = 1 MHz
105
4
3.5
3
Ciss
104
103
102
101
Coss
2750 µA
2.5
2
275 µA
Crss
1.5
1
0
20
40
60
-60
-20
20
60
Tj [°C]
100
140
180
VDS [V]
11 Typical forward diode characteristics
12 Typ. avalanche characteristics
I F = f(V SD ); parameter: T j
I AS = f(t AV); parameter: T j(start)
104
1000
103
25 °C
100 °C
150 °C
25 °C
102
100
175 °C
101
100
10
0
0.2 0.4 0.6 0.8
VSD [V]
1
1.2 1.4 1.6
1
10
100
1000
tAV [µs]
Data Sheet
8
8
Rev. 1.01
2023-04-13
OptiMOS™ 5 Automotive Power MOSFET, 60 V
IAUTN06S5N008T
13 Typical avalanche energy
14 Drain-source breakdown voltage
E AS = f(T j); parameter: ID
V BR(DSS) = f(T j); I D_typ = 1 mA
65
2000
75 A
64
63
62
61
60
59
58
57
1600
1200
150 A
800
300 A
400
0
-60
-20
20
60
100
140
180
25
75
125
175
Tj [°C]
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 100 A pulsed; parameter: V DD
10
9
VGS
16 V
Qg
8
40 V
7
6
5
4
3
2
1
0
64 V
Qgate
Qgd
Qgs
0
40
80
120
160
Qgate [nC]
Data Sheet
9
10
Rev. 1.01
2023-04-13
OptiMOS™ 5 Automotive Power MOSFET, 60 V
IAUTN06S5N008T
Package Outline
Footprint
Packaging
Data Sheet
1
1
0
0
Rev. 1.01
2023-04-13
OptiMOS™ 5 Automotive Power MOSFET, 60 V
IAUTN06S5N008T
Revision History
Revision
Date
Changes
Revision 1.0
Revision 1.01
2023-02-07
2023-04-13
Final data sheet
Better picture of the MOSFET on page 1
Data Sheet
11
Rev. 1.01
2023-04-13
11
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2023-04-13
Published by
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The information given in this document shall in no event be For further information on technology, delivery terms and
regarded as
a guarantee of conditions or characteristics conditions and prices, please contact the nearest Infineon
Infineon Technologies AG
81726 Munich, Germany
("Beschaffenheitsgarantie").
Technologies Office (www.infineon.com).
With respect to any examples, hints or any typical values stated
herein and/or any information regarding the application of the
product, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without
limitation warranties of non-infringement of intellectual
property rights of any third party.
WARNINGS
© 2022 Infineon Technologies AG
All Rights Reserved.
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dangerous substances. For information on the types in
question please contact the nearest Infineon Technologies
Office.
In addition, any information given in this document is subject to
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document and any applicable legal requirements, norms and
standards concerning customer's products and any use of the
product of Infineon Technologies in customer's applications.
The data contained in this document is exclusively intended for
technically trained staff. It is the responsibility of customer’s
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for the intended application and the completeness of the
product information given in this document with respect to
such application.
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aspect of this document?
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a
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Email: erratum@infineon.com
Technologies’ products may not be used in any applications
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thereof can reasonably be expected to result in personal
injury.
Document reference
IAUTN06S5N008T-Data-Sheet-10-
Infineon
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