IDB09E120 [INFINEON]
Fast Switching EmCon Diode; 快速开关EMCON二极管
| 型号： | IDB09E120 |
| 厂家： | 
Infineon |
| 描述： | Fast Switching EmCon Diode |
| 文件： | 总9页 (文件大小：200K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IDP09E120
IDB09E120
Fast Switching EmCon Diode
Product Summary
Feature
V
1200
9
V
A
V
RRM
• 1200 V EmCon technology
• Fast recovery
• Soft switching
• Low reverse recovery charge
• Low forward voltage
• Easy paralleling
I
F
V
T
1.65
150
F
°C
jmax
P-TO220-3.SMD
P-TO220-2-2.
Type
Package
Ordering Code Marking Pin 1 PIN 2 PIN 3
Q67040-S4479
P-TO220-3.SMD Q67040-S4384
C
A
C
-
A
IDP09E120
IDB09E120
P-TO220-2-2.
D09E120
D09E120 NC
Maximum Ratings, at T = 25 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
Continous forward current
Symbol
Value
1200
Unit
V
A
V
RRM
I
F
T =25°C
23
C
T =90°C
14.4
C
Surge non repetitive forward current
I
I
50
FSM
FRM
T =25°C, t =10 ms, sine halfwave
C
p
Maximum repetitive forward current
36
T =25°C, t limited by T
, D=0.5
C
p
jmax
W
Power dissipation
P
tot
T =25°C
69
33
C
T =90°C
C
-55...+150
260
°C
°C
Operating and storage temperature
T , T
S
Soldering temperature
T
1.6mm(0.063 in.) from case for 10s
Page 1
Rev.2
2003-07-31
IDP09E120
IDB09E120
Thermal Characteristics
Parameter
Symbol
Values
typ. max.
Unit
min.
Characteristics
-
-
-
-
1.8
62
K/W
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
R
R
R
thJC
thJA
thJA
-
-
-
35
62
-
2
1)
@ 6 cm cooling area
Electrical Characteristics, at T = 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ. max.
Unit
µA
V
min.
Static Characteristics
Reverse leakage current
V =1200V, T =25°C
I
R
-
-
-
-
100
700
R
j
V =1200V, T =150°C
R
j
Forward voltage drop
V
F
I =9A, T =25°C
-
-
1.65
1.7
2.15
-
F
j
I =9A, T =150°C
F
j
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
Rev.2
2003-07-31
IDP09E120
IDB09E120
Electrical Characteristics, at T = 25 °C, unless otherwise specified
j
Parameter
Symbol
Values
typ. max.
Unit
min.
Dynamic Characteristics
Reverse recovery time
ns
A
t
I
rr
V =800V, I =9A, di /dt=750A/µs, T =25°C
-
-
-
140
200
210
-
-
-
R
F
F
j
V =800V, I =9A, di /dt=750A/µs, T =125°C
R
F
F
j
V =800V, I =9A, di /dt=750A/µs, T =150°C
R
F
F
j
Peak reverse current
rrm
V =800V, I = 9 A, di /dt=750A/µs, T =25°C
-
-
-
13.3
16.1
16.5
-
-
-
R
F
F
j
V =800V, I =9A, di /dt=750A/µs, T =125°C
R
F
F
j
V =800V, I =9A, di /dt=750A/µs, T =150°C
R
F
F
j
nC
Reverse recovery charge
Q
S
rr
V =800V, I =9A, di /dt=750A/µs, T =25°C
-
-
-
950
1470
1600
-
-
-
R
F
F
j
V =800V, I =9A, di /dt=750A/µs, T =125°C
R
F
F
j
V =800V, I =9A, di /dt=750A/µs, T =150°C
R
F
F
j
Reverse recovery softness factor
V =800V, I =9A, di /dt=750A/µs, T =25°C
-
-
-
5.4
6.5
6.6
-
-
-
R
F
F
j
V =800V, I =9A, di /dt=750A/µs, T =125°C
R
F
F
j
V =800V, I =9A, di /dt=750A/µs, T =150°C
R
F
F
j
Page 3
Rev.2
2003-07-31
IDP09E120
IDB09E120
1 Power dissipation
= f (T )
2 Diode forward current
I = f(T )
P
tot
C
F
C
parameter: T ≤ 150 °C
parameter: T ≤ 150°C
j
j
25
70
W
A
50
40
30
20
10
0
15
10
5
0
25
50
75
100
150
25
50
75
100
150
°C
°C
T
T
C
C
3 Typ. diode forward current
I = f (V )
4 Typ. diode forward voltage
V = f (T )
F
F
F
j
27
2.6
A
V
-55°C
25°C
18A
21
18
15
12
9
100°C
150°C
2.2
2
9A
1.8
1.6
1.4
1.2
4,5A
6
3
0
0
0.5
1
1.5
2
3
-60
-20
20
60
100
160
V
°C
V
T
F
j
Page 4
Rev.2
2003-07-31
IDP09E120
IDB09E120
5 Typ. reverse recovery time
t = f (di /dt)
6 Typ. reverse recovery charge
Q =f(di /dt)
rr
F
rr
F
parameter: V = 800V, T = 125°C
parameter: V = 800V, T = 125 °C
R
j
R j
690
2000
ns
nC
18A
590
540
490
440
390
340
290
240
190
140
90
1800
1700
1600
1500
1400
1300
1200
1100
1000
900
18A
9A
4,5A
9A
4,5A
200 300 400 500 600 700 800
1000
200 300 400 500 600 700 800
1000
A/µs
di /dt
A/µs
di /dt
F
F
7 Typ. reverse recovery current
8 Typ. reverse recovery softness factor
S = f(di /dt)
I = f (di /dt)
rr
F
F
parameter: V = 800V, T = 125°C
parameter: V = 800V, T = 125°C
R
j
R j
21
18
A
18A
9A
17
15
13
11
9
14
12
10
8
4,5A
18A
9A
4,5A
6
7
4
5
2
200 300 400 500 600 700 800
1000
200 300 400 500 600 700 800
1000
A/µs
di /dt
A/µs
di /dt
F
F
Page 5
Rev.2
2003-07-31
IDP09E120
IDB09E120
9 Max. transient thermal impedance
= f (t )
Z
thJC
p
parameter : D = t /T
p
10 1
IDP09E120
K/W
10 0
10 -1
10 -2
D = 0.50
0.20
0.10
0.05
0.02
10 -3
0.01
single pulse
10 -4
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
s
t
p
Page 6
Rev.2
2003-07-31
IDP09E120
IDB09E120
TO-220-2-2
A
N
P
dimensions
[mm]
[inch]
min max
symbol
E
min
9.70
15.30
0.65
3.55
2.60
9.00
13.00
17.20
4.40
0.40
max
D
A
B
C
D
E
F
G
H
J
K
L
M
N
P
T
10.10 0.3819 0.3976
15.90 0.6024 0.6260
U
0.85
3.85
3.00
9.40
0.0256 0.0335
0.1398 0.1516
0.1024 0.1181
0.3543 0.3701
V
B
H
F
14.00 0.5118 0.5512
17.80 0.6772 0.7008
W
4.80
0.60
1.05 typ.
0.1732 0.1890
0.0157 0.0236
0.41 typ.
J
2.54 typ.
4.4 typ.
0.1 typ.
0.173 typ.
X
L
1.10
1.40
0.0433 0.0551
0.095 typ.
G
2.4 typ.
6.6 typ.
13.0 typ.
7.5 typ.
U
V
W
X
0.26 typ.
0.51 typ.
0.295 typ.
0.00
0.40
0.0000 0.0157
T
C
M
K
Page 7
Rev.2
2003-07-31
IDP09E120
IDB09E120
TO-220-3-45 (P-TO220SMD)
dimensions
[mm]
[inch]
max
10.00 0.3858 0.3937
symbol
min
9.80
max
min
A
B
C
D
E
F
G
H
K
L
M
N
P
Q
R
S
T
U
V
W
X
Y
Z
1.3 typ.
0.0512 typ.
1.25
0.95
1.75
1.15
0.0492 0.0689
0.0374 0.0453
0.1 typ.
2.54 typ.
0.72
0.85
0.0283 0.0335
0.2 typ.
5.08 typ.
4.30
1.28
9.00
2.30
4.50
1.40
9.40
2.50
0.1693 0.1772
0.0504 0.0551
0.3543 0.3701
0.0906 0.0984
0.5551 typ.
14.1 typ.
0.00
3.30
0.20
3.90
0.0000 0.0079
0.1299 0.1535
8° max
8° max
1.70
0.50
2.50
0.65
0.0669 0.0984
0.0197 0.0256
0.4252 typ.
10.8 typ.
1.35 typ.
6.43 typ.
4.60 typ.
9.40 typ.
16.15 typ.
0.0532 typ.
0.2532 typ.
0.1811 typ.
0.3701 typ.
0.6358 typ.
Page 8
Rev.2
2003-07-31
IDP09E120
IDB09E120
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
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characteristics.
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We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 9
Rev.2
2003-07-31
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