IDD03E60 [INFINEON]

Fast Switching EmCon Diode; 快速开关EMCON二极管
IDD03E60
型号: IDD03E60
厂家: Infineon    Infineon
描述:

Fast Switching EmCon Diode
快速开关EMCON二极管

二极管 开关 PC 快速恢复二极管
文件: 总8页 (文件大小:184K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
IDD03E60  
Fast Switching EmCon Diode  
Product Summary  
Feature  
V
600  
3
V
A
V
RRM  
600 V EmCon technology  
Fast recovery  
Soft switching  
Low reverse recovery charge  
Low forward voltage  
175°C operating temperature  
Easy paralleling  
I
F
V
T
1.5  
175  
F
°C  
jmax  
Type  
Package  
Ordering Code Marking Pin 1 PIN 2 PIN 3  
Q67040-S4377  
NC  
C
A
IDD03E60  
P-TO252-3-1  
D03E60  
Maximum Ratings, at T = 25 °C, unless otherwise specified  
j
Parameter  
Repetitive peak reverse voltage  
Continous forward current  
Symbol  
Value  
600  
Unit  
V
A
V
RRM  
I
F
T =25°C  
7.3  
4.9  
C
T =90°C  
C
Surge non repetitive forward current  
I
I
16  
FSM  
FRM  
T =25°C, t =10 ms, sine halfwave  
C
p
Maximum repetitive forward current  
11  
T =25°C, t limited by T  
, D=0.5  
jmax  
C
p
W
Power dissipation  
P
tot  
T =25°C  
23  
C
T =90°C  
13.1  
C
-55...+175  
255  
°C  
°C  
Operating and storage temperature  
T , T  
j stg  
S
Soldering temperature  
T
for 10s (according to JEDEC J-STD-020A)  
Page 1  
Rev.2  
2003-07-31  
IDD03E60  
Thermal Characteristics  
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
Characteristics  
-
-
6.5  
K/W  
Thermal resistance, junction - case  
SMD version, device on PCB:  
@ min. footprint  
R
R
thJC  
thJA  
-
-
-
-
75  
50  
2
1)  
@ 6 cm cooling area  
Electrical Characteristics, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Values  
typ. max.  
Unit  
µA  
V
min.  
Static Characteristics  
Reverse leakage current  
V =600V, T =25°C  
I
R
-
-
-
-
50  
250  
R
j
V =600V, T =150°C  
R
j
Forward voltage drop  
V
F
I =3A, T =25°C  
-
-
1.5  
1.5  
2
-
F
j
I =3A, T =150°C  
F
j
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical without blown air.  
Page 2  
Rev.2  
2003-07-31  
IDD03E60  
Electrical Characteristics, at T = 25 °C, unless otherwise specified  
j
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
Dynamic Characteristics  
Reverse recovery time  
ns  
A
t
I
rr  
V =400V, I =3A, di /dt=350A/µs, T =25°C  
-
-
-
62  
98  
103  
-
-
-
R
F
F
j
V =400V, I =3A, di /dt=350A/µs, T =125°C  
R
F
F
j
V =400V, I =3A, di /dt=350A/µs, T =150°C  
R
F
F
j
Peak reverse current  
rrm  
V =400V, I = 3 A, di /dt=350A/µs, T =25°C  
-
-
-
3.8  
4.6  
4.7  
-
-
-
R
F
F
j
V =400V, I =3A, di /dt=350A/µs, T =125°C  
R
F
F
j
V =400V, I =3A, di /dt=350A/µs, T =150°C  
R
F
F
j
nC  
Reverse recovery charge  
Q
S
rr  
V =400V, I =3A, di /dt=350A/µs, T =25°C  
-
-
-
118  
195  
215  
-
-
-
R
F
F
j
V =400V, I =3A, di /dt=350A/µs, T =125°C  
R
F
F
j
V =400V, I =3A, di /dt=350A/µs, T =150°C  
R
F
F
j
Reverse recovery softness factor  
V =400V, I =3A, di /dt=350A/µs, T =25°C  
-
-
-
4.1  
5.1  
5.2  
-
-
-
R
F
F
j
V =400V, I =3A, di /dt=350A/µs, T =125°C  
R
F
F
j
V =400V, I =3A, di /dt=350A/µs, T =150°C  
R
F
F
j
Page 3  
Rev.2  
2003-07-31  
IDD03E60  
1 Power dissipation  
= f (T )  
2 Diode forward current  
I = f(T )  
P
tot  
C
F
C
parameter: T 175°C  
parameter: T 175°C  
j
j
24  
8
W
A
20  
18  
16  
14  
12  
10  
8
6
5
4
3
2
1
0
6
4
2
0
25  
50  
75  
100  
125  
175  
25  
50  
75  
100  
125  
175  
°C  
°C  
T
T
C
C
3 Typ. diode forward current  
I = f (V )  
4 Typ. diode forward voltage  
V = f (T )  
F
F
F
j
2
9
V
A
6A  
1.8  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1
7
6
5
4
3
2
1
0
-55°C  
25°C  
100°C  
150°C  
3A  
1,5A  
0
0.5  
1
1.5  
2.5  
-60  
-20  
20  
60  
100  
160  
V
°C  
T
V
F
j
Page 4  
Rev.2  
2003-07-31  
IDD03E60  
5 Typ. reverse recovery time  
t = f (di /dt)  
6 Typ. reverse recovery charge  
Q =f(di /dt)  
rr  
F
rr  
F
parameter: V = 400V, T = 125°C  
parameter: V = 400V, T = 125 °C  
R
j
R j  
300  
nC  
220  
ns  
6A  
180  
160  
140  
120  
100  
80  
260  
240  
220  
200  
180  
160  
140  
120  
100  
6A  
3A  
1.5A  
3A  
60  
1.5A  
40  
20  
0
A/µs  
1000  
200 300 400 500 600 700 800  
1000  
200 300 400 500 600 700 800  
A/µs  
di /dt  
di /dt  
F
F
7 Typ. reverse recovery current  
8 Typ. reverse recovery softness factor  
S = f(di /dt)  
I = f (di /dt)  
rr  
F
F
parameter: V = 400V, T = 125°C  
parameter: V = 400V, T = 125°C  
R
j
R j  
9
8
A
6A  
7
3A  
7
6
5
4
3
2
1
0
6A  
1.5A  
6.5  
6
3A  
1.5A  
5.5  
5
4.5  
4
3.5  
3
2.5  
200 300 400 500 600 700 800  
1000  
200 300 400 500 600 700 800  
1000  
A/µs  
di /dt  
A/µs  
di /dt  
F
F
Page 5  
Rev.2  
2003-07-31  
IDD03E60  
9 Max. transient thermal impedance  
= f (t )  
Z
thJC  
p
parameter : D = t /T  
p
10 1  
IDD03E60  
K/W  
10 0  
10 -1  
D = 0.50  
0.20  
0.10  
0.05  
10 -2  
0.02  
single pulse  
0.01  
10 -3  
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2  
10 0  
s
t
p
Page 6  
Rev.2  
2003-07-31  
IDD03E60  
P-TO252 (D-Pak)  
dimensions  
[mm]  
symbol  
inch]  
min  
6.40  
5.25  
(0.65)  
0.63  
max  
6.73  
5.50  
min  
0.2520  
0.2067  
max  
A
B
C
D
E
F
G
H
K
L
M
N
P
R
S
T
0.2650  
0.2165  
(1.15) (0.0256) (0.0453)  
0.89  
0.0248  
0.0350  
0.2520  
2.28  
2.19  
0.76  
0.90  
5.97  
9.40  
0.46  
0.87  
0.51  
5.00  
4.17  
0.26  
-
2.39  
0.98  
1.21  
6.23  
10.40  
0.58  
1.15  
-
0.0862  
0.0299  
0.0354  
0.2350  
0.3701  
0.0181  
0.0343  
0.0201  
0.1969  
0.1642  
0.0102  
-
0.0941  
0.0386  
0.0476  
0.2453  
0.4094  
0.0228  
0.0453  
-
-
-
-
-
1.02  
-
0.0402  
-
U
Page 7  
Rev.2  
2003-07-31  
IDD03E60  
Published by  
Infineon Technologies AG,  
Bereichs Kommunikation  
St.-Martin-Strasse 53,  
D-81541 München  
© Infineon Technologies AG 1999  
All Rights Reserved.  
Attention please!  
The information herein is given to describe certain components and shall not be considered as warranted  
characteristics.  
Terms of delivery and rights to technical change reserved.  
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,  
regarding circuits, descriptions and charts stated herein.  
Infineon Technologies is an approved CECC manufacturer.  
Information  
For further information on technology, delivery terms and conditions and prices please contact your nearest  
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).  
Warnings  
Due to technical requirements components may contain dangerous substances.  
For information on the types in question please contact your nearest Infineon Technologies Office.  
Infineon Technologies Components may only be used in life-support devices or systems with the express  
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to  
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device  
or system Life support devices or systems are intended to be implanted in the human body, or to support  
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health  
of the user or other persons may be endangered.  
Page 8  
Rev.2  
2003-07-31  

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