IDDD04G65C6 [INFINEON]
英飞凌现创新推出双 DPAK (DDPAK)，这是首款顶部冷却 SMD 封装，主要面向大功率 SMPS 应用，如 PC 电源、太阳能、服务器和电信设备等应用。现有高压技术的优点 CoolSiC™ 肖特基二极管 650V G6 结合了顶部冷却的创新概念，为 PFC 等高电流硬开关拓扑提供了系统解决方案，为 LLC 拓扑提供了高端高效解决方案。;
| 型号： | IDDD04G65C6 |
| 厂家： | 
Infineon |
| 描述： | 英飞凌现创新推出双 DPAK (DDPAK)，这是首款顶部冷却 SMD 封装，主要面向大功率 SMPS 应用，如 PC 电源、太阳能、服务器和电信设备等应用。现有高压技术的优点 CoolSiC™ 肖特基二极管 650V G6 结合了顶部冷却的创新概念，为 PFC 等高电流硬开关拓扑提供了系统解决方案，为 LLC 拓扑提供了高端高效解决方案。 开关 PC 服务器 电信 高压 功率因数校正 肖特基二极管 |
| 文件： | 总9页 (文件大小：682K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IDDD04G65C6
6th Generation CoolSiC™
650V SiC Schottky Diode
The CoolSiC™ generation ꢀ ꢁGꢀꢂ is the leading edge technology from Infineon for the SiC Schottky barrier
diodes. The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further
advancements like a novel Schottky metal system. The result is a family of products with improved efficiency
over all load conditions, resulting from a lower figure of merit (Qc x VFꢂ. The CoolSiC™ Schottky diode ꢀꢃꢄ V Gꢀ
has been designed to complement our ꢀꢄꢄ V and ꢀꢃꢄ V CoolMOS™ ꢅ families, meeting the most stringent
application requirements in this voltage range.
Table 1
Key performance parameters
PG-HDSOP-10-1
Parameter
VRRM
Value
650
6.9
Unit
V
Cathode
QC (VR = 400 V)
EC (VR = 400 V)
nC
µJ
A
1.1
IF (TC ≤ ꢆꢃ5 °C, D = 1)
VF (IF = 4 A, Tj = 25 °C)
4
1.25
V
Pin 1-2: n.c.
Table 2
Package information
Pin 3-5: Anode
Pin 6-10: Cathode
Type / ordering Code
IDDD04G65C6
Package
Marking
PG-HDSOP-10-1 D0465C6
Features
Best in class forward voltage (1.25 V)
Best in class figure of merit (Qc x VF)
High dv/dt ruggedness (150 V/ns)
Benefits
System efficiency improvement
System cost and size savings due to the reduced cooling requirements
Enabling higher frequency and increased power density
Potential Applications
Power factor correction in SMPS
Solar inverter
Uninterruptible power supply
Product Validation
Qualified for industrial applications according to the relevant tests of JEDEC (J-STD20 and JESD22)
Final Datasheet
Please read the Important Notice and Warnings at the end of this document
Rev. 2.0, 2018-02-05
6th Generation CoolSiCTM
Table of Content
1
2
Maximum ratings ...............................................................................................................................3
Thermal characteristics .....................................................................................................................3
3
3.1
3.2
Electrical characteristics ....................................................................................................................4
Static characteristics...............................................................................................................................4
AC characteristics....................................................................................................................................4
4
5
6
Diagrams............................................................................................................................................5
Simplified forward characteristic.......................................................................................................7
Package outlines................................................................................................................................8
Final Datasheet
2
Rev. 2.0 , 2018-02-05
6th Generation CoolSiCTM
1
Maximum ratings
Table 3
Maximum ratings
Values
Typ.
Parameter
Symbol
Unit Note/Test condition
Min.
Max.
4
–
–
–
–
–
–
TC ≤ 155 °C, D = 1
TC ≤ 125 °C, D = 1
TC ≤ ꢇꢃ °C, D = 1
Continuous forward current
IF
7
13
Surge-repetitive forward current,
sine halfwave1
IF,RM
–
–
18
TC = 25 °C, tp = 10 ms
A
–
–
–
–
29
23
TC = 25 °C, tp = 10 ms
TC = 150 °C, tp = 10 ms
Surge non-repetitive forward
current, sine halfwave
IF,SM
Non-repetitive peak forward
current
IF,max
∫ i²dt
–
–
250
TC = 25 °C, tp = 10 µs
–
–
–
–
–
–
–
–
–
–
4.3
2.7
650
150
56
TC = 25 °C, tp = 10 ms
A²s
i²t value
TC = 150 °C, tp = 10 ms
Repetitive peak reverse voltage
Diode dv/dt ruggedness
Power dissipation
VRRM
V
TC = 25 °C
dv/dt
V/ns VR = 0..480 V
Ptot
Tj
Tstg
W
TC = 25°C, RthJC,max
Operating and storage
temperature
-55
–
175
°C
–
2
Thermal characteristics
Table 4
Thermal characteristics
Symbol
Values
Parameter
Unit Note/Test condition
Min.
Typ.
Max.
2.6
Thermal resistance, junction-
case
RthJC
RthJA
–
1.6
–
Thermal resistance, junction-
ambient
Device on PCB, minimal
footprint
–
–
–
–
62
Device on 40*40*1.5 mm
epoxy PCB FR4 (one layer,
70 µm thickness) with 6
cm2 copper for cathode
connection and cooling,
PCB vertically placed
K/W
Thermal resistance, junction-
ambient for SMD version
RthJA
35
–
45
without air stream cooling
Allowed only reflow
soldering
Soldering temperature
Tsold
260
°C
1 The surge-repetitive forward current test was performed with 1000 pulses (half-wave rectified sine with the 10 ms period).
Final Datasheet Rev. 2.0 , 2018-02-05
3
6th Generation CoolSiCTM
3
Electrical characteristics
3.1
Static characteristics
Static characteristics
Symbol
Table 5
Parameter
Values
Typ.
Unit Note/Test condition
Min.
650
–
Max.
–
DC blocking voltage
VDC
VF
–
Tj = 25 °C
1.25
1.5
0.4
13
1.35
–
V
IF = 4 A, Tj = 25 °C
Diode forward voltage
–
IF = 4 A, Tj = 150 °C
VR = 420 V, Tj = 25 °C
VR = 420 V, Tj = 125 °C
VR = 420 V, Tj = 150 °C
–
14
–
Reverse current
IR
–
µA
–
31
–
3.2
AC characteristics
Table 6
Parameter
AC characteristics
Values
Symbol
Qc
Unit Note/Test Condition
Min.
Typ.
Max.
VR = 400 V, Tj = 150 °C,
nC
Total capacitive charge
Total capacitance
–
6.9
–
di/dt = 200 A/µs, IF ≤ IF,MAX
VR = 1 V, f = 1 MHz,
Tj = 25 °C
–
–
–
205
12
–
–
–
VR = 300 V, f = 1 MHz,
Tj = 25 °C
C
pF
VR = 600 V, f = 1 MHz,
Tj = 25 °C
12
Final Datasheet
4
Rev. 2.0 , 2018-02-05
6th Generation CoolSiCTM
4
Diagrams
Ptot = f(TC)
IF = f(TC); RthJC,max ; Tj ≤ 175 °C; parameter: D = tP/T
Figure 1
Power dissipation
Figure 2
Max. forward current
IF = f(VF); tp = 10 µs; parameter: Tj
IF = f(VF); tp = 10 µs; parameter: Tj
Figure 3
Typ. forward characteristics
Figure 4
Typ. forward characteristics
in surge current
Final Datasheet
5
Rev. 2.0 , 2018-02-05
6th Generation CoolSiCTM
QC = f(diF/dt); Tj = 150 °C; VR = 400 V; IF ≤ IF,max
IR = f(VR); parameter: Tj
Figure 5
Typ. cap. charge vs. current slope
Figure 6
Typ. reverse current vs. reverse voltage
Zth,jc = f(tP); parameter: D = tP/T
Max. transient thermal
impedance
C = f(VR); Tj = 25 °C; f = 1 MHz
Figure 7
Figure 8
Typ. capacitance vs. reverse voltage
Final Datasheet
6
Rev. 2.0 , 2018-02-05
6th Generation CoolSiCTM
EC = f(VR)
Figure 9
Typ. capacitance stored energy
5
Simplified forward characteristic
VF VTH RDIFF IF
Treshold voltage (VTH):
VTH Tj 0.001Tj 0.766 V
Differential resistance (RDIFF):
2
RDIFF Tj ATj BTj C
A 3.1010-6
DIFF
B 2.2510-4
C 11.8910-2
VF = f(IF)
Tj [°C]; -55 °C ≤ Tj ≤ 175 °C; IF ≤ ꢈ A
Figure 11 Mathematical Equation
Figure 10 Equivalent forward current curve
Final Datasheet
7
Rev. 2.0 , 2018-02-05
6th Generation CoolSiCTM
6
Package outlines
Figure 12 Outlines of the package PG-HDSOP-10-1, dimensions in milimeters
Final Datasheet
8
Rev. 2.0 , 2018-02-05
6thꢀGenerationꢀCoolSiCª
IDDD04G65C6
RevisionꢀHistory
IDDD04G65C6
Revision:ꢀ2018-02-26,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
2.0
Subjects (major changes since last revision)
Release of final version
2018-02-26
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.
TrademarksꢀupdatedꢀAugustꢀ2015
OtherꢀTrademarks
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9
Rev.ꢀ2.0,ꢀꢀ2018-02-26
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