IDT02S60C [INFINEON]
2ndGeneration thinQ!TM SiC Schottky Diode; 2ndGeneration的thinQ ！ TM SiC肖特基二极管
| 型号： | IDT02S60C |
| 厂家： | 
Infineon |
| 描述： | 2ndGeneration thinQ!TM SiC Schottky Diode |
| 文件： | 总7页 (文件大小：293K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IDT02S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features
Product Summary
V DC
Q c
I F
600
3.2
2
V
• Revolutionary semiconductor material - Silicon Carbide
• No reverse recovery/ no forward recovery
• Temperature independent switching behavior
• High surge current capability
nC
A
PG-TO220-2-2
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 5mA2)
• Optimized for high temperature operation
thinQ! 2G Diode specially designed for fast switching applications like:
• CCM PFC
Type
Package
Marking
Pin 1
Pin 2
IDT02S60C
PG-TO220-2-2
D02S60C
C
A
Maximum ratings
Parameter
Value
Symbol Conditions
Unit
I F
T C<120 °C
T C<70 °C
f =50 Hz
Continuous forward current
2
3
A
I F,RMS
I F,SM
RMS forward current
2.8
11.5
9.7
T C=25 °C, t p=10 ms
T C=150°C, t p=10 ms
Surge non-repetitive forward current,
sine halfwave
T j=150 °C,
T C=100 °C, D =0.1
I F,RM
Repetitive peak forward current
7.3
I F,max
T C=25 °C, t p=10 µs
T C=25 °C, t p=10 ms
T C=150°C, t p=10 ms
T j=25 °C
Non-repetitive peak forward current
100
0.61
0.44
600
50
∫i 2dt
A2s
i ²t value
V RRM
dv/ dt
P tot
Repetitive peak reverse voltage
Diode dv/dt ruggedness
Power dissipation
V
V
R = 0….480V
V/ns
W
T C=25 °C
18
T j, T stg
Operating and storage temperature
Mounting torque
-55 ... 175
60
°C
M3 and M3.5 screws
page 1
Mcm
Rev. 2.0
2007-04-25
IDT02S60C
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R thJC
Thermal resistance, junction - case
-
-
-
-
8.5
62
K/W
Thermal resistance,
junction - ambient
R thJA
leaded
Soldering temperature,
wavesoldering only allowed at leads
1.6mm (0.063 in.) from
case for 10s
T sold
-
-
260 °C
Electrical characteristics
Static characteristics
V DC
V F
I R=0.05mA, T j=25°C
I F=2 A, T j=25 °C
I F=2 A, T j=150 °C
I F=3 A, T j=25 °C
I F=3 A, T j=150 °C
V R=600 V, T j=25 °C
DC blocking voltage
Diode forward voltage
600
-
-
V
-
-
-
-
-
1.7
2.1
2.1
2.8
0.23
1.9
2.6
2.4
3.7
15
I R
Reverse current
µA
nC
V R=600 V, T j=150 °C
-
1
150
AC characteristics
V R=400 V,I F≤I F,max
di F/dt =200 A/µs,
T j=150 °C
,
Q c
t c
Total capacitive charge
Switching time3)
-
-
-
-
-
3.2
-
-
<10 ns
V R=1 V, f = MHz
C
60
8
-
-
-
pF
V R=300 V, f =1 MHz
V R=600 V, f =1 MHz
8
1) J-STD20 and JESD22
2) All devices tested under avalanche condition, for a time periode of 5ms, at 5mA.
3) tc is the time constant for the capacitive displacement current waveform (independent from Tj, ILOAD and
di/dt), different from trr, which is dependent on Tj, ILOAD, di/dt. No reverse recovery time constant trr due to
absence of minority carrier injection.
4) Only capacitive charge occuring, guaranteed by design.
Rev. 2.0
page 2
2007-04-25
IDT02S60C
1 Power dissipation
tot=f(T C)
2 Diode forward current
I F=f(T C); T j≤175 °C
parameter: D=t P /T
P
parameter: RthJC(max)
20
14
12
0.1
16
12
8
10
8
0.3
6
0.5
0.7
4
1
4
2
0
0
25
75
125
175
25
75
125
175
T
C [°C]
T C [°C]
3 Typ. forward characteristic
I F=f(V F); t p=400 µs
parameter: T j
4 Typ. forward characteristic in surge current
mode
I F=f(V F); t p=400 µs; parameter: Tj
3
15
150ºC
25ºC
-55ºC
100ºC
12
175ºC
2
1
0
175ºC
9
-55ºC
25ºC
150ºC
6
3
0
100ºC
0
1
2
3
4
0
2
4
6
8
V F[V]
V F[V]
Rev. 2.0
page 3
2007-04-25
IDT02S60C
6 Typ. reverse current vs. reverse voltage
5 Typ. capacitance charge vs. current slope
Q C=f(di F/dt )4); T j=150 °C; I F≤I F,max
I R=f(V R)
parameter: T j
10-5
10-6
10-7
10-8
10-9
4
3
2
1
0
175 °C
150 °C
100 °C
25 °C
-55 °C
10-10
100
200
300
400
500
600
100
400
700
1000
di F/d t [A/µs]
V R [V]
7 Transient thermal impedance
thJC=f(t p)
8 Typ. capacitance vs. reverse voltage
Z
C =f(V R); T C=25 °C, f =1 MHz
parameter: D =t p/T
101
60
45
30
15
0
0.5
0.2
100
0.1
0.05
0.02
0
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
102
103
V
R [V]
t
P [s]
Rev. 2.0
page 4
2007-04-25
IDT02S60C
9 Typ. C stored energy
E C=f(V R)
1.8
1.5
1.3
1.0
0.8
0.5
0.3
0.0
0
100
200
300
400
500
600
V
R [V]
Rev. 2.0
page 5
2007-04-25
IDT02S60C
Package Outline:PG-TO220-2-2
Rev. 2.0
page 6
2007-04-25
IDT02S60C
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions o
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typica
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o
non-infringement of intellectual property rights of any third party
Information
For further information on technology, delivery terms and conditions and prices please contact your neares
Infineon Technologies Office (www.infineon.com ).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support and/or
maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered.
Rev. 2.0
page 7
2007-04-25
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