IGC10T65QE [INFINEON]
Insulated Gate Bipolar Transistor;
| 型号： | IGC10T65QE |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor 栅 |
| 文件： | 总4页 (文件大小：226K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGC10T65QE
High Speed IGBT3 Chip
Features:
Recommended for:
discrete components and
modules
650V Trench & Field Stop technology
high speed switching series third
generation
C
E
low VCE(sat)
low EMI
low turn-off losses
positive temperature coefficient
qualified according to JEDEC for target
applications
Applications:
uninterruptible power supplies
welding converters
converters with high switching
frequency
G
1)
Chip Type
VCE
ICn
Die Size
Package
IGC10T65QE
650V
20A
3.19 x 3.21mm2
sawn on foil
1 ) nominal collector current at Tc = 100°C, not subject to production test - verified by design/characterization
Mechanical Parameters
Die size
3.19 x 3.21
See chip drawing
0.361 x 0.513
10.24
Emitter pad size
Gate pad size
Area total
mm2
Thickness
70
µm
Wafer size
200
mm
Max.possible chips per wafer
Passivation frontside
Pad metal
2693
Photoimide
3200 nm AlSiCu
Backside metal
Die bond
Ni Ag –system
Electrically conductive epoxy glue and soft solder
Wire bond
Al, <500µm
Reject ink dot size
0.65mm ; max 1.2mm
for original and
sealed MBB bags
Ambient atmosphere air, Temperature 17°C – 25°C,
< 6 month
Storage environment
Acc. to IEC62258-3: Atmosphere >99% Nitrogen or inert gas,
Humidity <25%RH, Temperature 17°C – 25°C, < 6 month
for open MBB bags
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7541E, Rev 1.0, 01.08.2012
IGC10T65QE
Maximum Ratings
Parameter
Symbol
VC E
Value
Unit
650
V
A
Collector-Emitter voltage, Tvj =25 C
DC collector current, limited by Tvj max
Pulsed collector current, tp limited by Tvj max
Gate emitter voltage
1)
IC
2)
Ic, p ul s
VG E
Tvj
60
A
V
20
-40 ... +175
5
Operating junction temperature
°C
µs
Short circuit data 2) 3) VGE = 15V, VCC = 400V, Tvj = 150°C
tSC
1) depending on thermal properties of assembly
2) not subject to production test - verified by design/characterization
3) allowed number of short circuits: <1000; time between short circuits: >1s.
Static Characteristics (tested on wafer), Tvj =25 C
Value
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Collector-Emitter breakdown voltage
Collector-Emitter saturation voltage
Gate-Emitter threshold voltage
Zero gate voltage collector current
Gate-Emitter leakage current
Integrated gate resistor
V(BR)CES
VCEsat
VGE(th)
ICES
VGE=0V , IC=2 mA
VGE=15V, IC=20A
650
1.48
4.2
1.95
5.1
2.32
5.6
1
V
IC=0.29mA , VGE=VCE
VCE=650V , VGE=0V
VCE=0V , VGE=20V
µA
nA
IGES
150
rG
none
Electrical Characteristics (not subject to production test - verified by design / characterization)
Value
Parameter
Symbol
Conditions
Unit
min. typ.
max.
VGE=15V, IC=20A,
Tvj =175 C
VCEsat
Ci es
Collector-Emitter saturation voltage
Input capacitance
2.5
V
VC E =25V,
1250
40
pF
VG E =0V, f=1MHz
Tvj =25 C
Reverse transfer capacitance
Cre s
Further Electrical Characteristic
Switching characteristics and thermal properties are depending strongly on module design and mounting
technology and can therefore not be specified for a bare die.
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7541E, Rev 1.0, 01.08.2012
IGC10T65QE
Chip Drawing
E
G
E = Emitter
G = Gate
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7541E, Rev 1.0, 01.08.2012
IGC10T65QE
Description
AQL 0,65 for visual inspection according to failure catalogue
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Revision History
Version
Subjects (major changes since last revision)
Date
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable
to assume that the health of the user or other persons may be endangered.
Edited by INFINEON Technologies, IFAG IPC TD VLS, L7541E, Rev 1.0, 01.08.2012
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