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IGC114T170S8RH [INFINEON]

Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, 12.08 X 9.47 MM, DIE-5;

IGC114T170S8RH


型号：	IGC114T170S8RH
厂家：	Infineon
描述：	Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, 12.08 X 9.47 MM, DIE-5 栅功率控制晶体管
文件：	总5页 (文件大小：126K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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