IGP30N60T [INFINEON]

LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY; 低损耗IGBT的沟槽和FILEDSTOP科技


型号：	IGP30N60T
厂家：	Infineon
描述：	LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY 低损耗IGBT的沟槽和FILEDSTOP科技瞄准线双极性晶体管
文件：	总12页 (文件大小：379K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IGP30N60T

IGW30N60T

TrenchStop Series

Low Loss IGBT in Trench and Fieldstop technology

•

Very low V_CE(sat)1.5 V (typ.)

Maximum Junction Temperature 175 °C

Short circuit withstand time – 5µs

Designed for :

- Frequency Converters

- Uninterruptible Power Supply

•

Trench and Fieldstop technology for 600 V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- very high switching speed

P-TO-220-3-1

(TO-220AB)

P-TO-247-3-1

(TO-220AC)

- low V_CE(sat)

•

Positive temperature coefficient in V_CE(sat)

Low EMI

Low Gate Charge

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

V_CE

I_C

V_{CE(sat),Tj=25°C}

1.5V

T_j,max

175°C

Marking Code Package

Ordering Code

Q67040S4722

Q67040S4724

IGP30N60T

IGW30N60T

600V

30A

G30T60

TO-220

TO-247

1.5V

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

DC collector current, limited by T_jmax

T_C= 25°C

V_CE

I_C

600

T_C= 100°C

Pulsed collector current, t_plimited by T_jmax

I_Cpuls

V_GE

t_SC

Turn off safe operating area (V_CE≤ 600V, T_j≤ 175°C)

Gate-emitter voltage

±20

Short circuit withstand time¹⁾

µs

_GE= 15V, V_CC≤ 400V, T_j≤ 150°C

P_tot

T_j

T_stg

187

Power dissipation T_C= 25°C

Operating junction temperature

Storage temperature

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

-40...+175

-55...+175

260

°C

¹⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

Rev. 2.2 Dec-04

Power Semiconductors

IGP30N60T

IGW30N60T

TrenchStop Series

Thermal Resistance

Parameter

Symbol

Conditions

Max. Value

Unit

Characteristic

IGBT thermal resistance,

junction – case

Thermal resistance,

junction – ambient

0.80

R_thJC

R_thJA

K/W

P-TO-220-3-1

P-TO-247-3-1

Electrical Characteristic, at T_j= 25 °C, unless otherwise specified

Value

typ.

Parameter

Symbol

Conditions

Unit

min.

max.

Static Characteristic

Collector-emitter breakdown voltage V_{(BR)C ES}

_GE=0V, I_C=0.2mA

600

Collector-emitter saturation voltage

V_{C E(sa t)}V_GE= 15V, I_C=30A

T_j=25°C

1.5

1.9

2.05

T_j=175°C

Gate-emitter threshold voltage

V_{GE(th )}

I_{C ES}

I_C=0.43mA,

4.1

4.9

5.7

_{C E}=V_GE

Zero gate voltage collector current

_{C E}=600V,

µA

_GE=0V

T_j=25°C

T_j=175°C

1000

100

Gate-emitter leakage current

Transconductance

I_GES

g_fs

_{C E}=0V,V_GE=20V

_{C E}=20V, I_C=30A

16.7

Integrated gate resistor

R_Gint

Ω

Dynamic Characteristic

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate charge

C_iss

C_oss

C_rss

_{C E}=25V,

_GE=0V,

1630

108

f=1MHz

Q_{Ga te}

_CC=480V, I_C=30A

_GE=15V

167

Internal emitter inductance

L_E

TO-247-3-1

measured 5mm (0.197 in.) from case

Short circuit collector current¹⁾

I_{C (SC)}

275

_GE=15V,t_SC≤5µs

V_CC= 400V,

T_j= 150°C

¹⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

Rev. 2.2 Dec-04

Power Semiconductors

IGP30N60T

IGW30N60T

TrenchStop Series

Switching Characteristic, Inductive Load, at T_j=25 °C

Value

Unit

Parameter

Symbol

Conditions

min.

Typ.

max.

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

t_{d (on)}

t_r

t_{d (off)}

t_f

E_on

E_{o ff}

E_ts

254

0.69

0.77

1.46

T_j=25°C,

_CC=400V,I_C=30A,

_GE=0/15V,

R_G=10.6 Ω,

L_σ¹⁾=136nH,

C_σ¹⁾=39pF

Energy losses include

“tail” and diode

reverse recovery. ²⁾

Switching Characteristic, Inductive Load, at T_j=175 °C

Value

Typ.

Parameter

Symbol

Conditions

Unit

min.

max.

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

t_{d (on)}

t_r

t_{d (off)}

t_f

E_on

E_{o ff}

E_ts

292

1.0

1.1

2.1

T_j=175°C,

_CC=400V,I_C=30A,

_GE=0/15V,

R_G= 10.6 Ω

L_σ¹⁾=136nH,

C_σ¹⁾=39pF

Energy losses include

“tail” and diode

reverse recovery.²⁾

¹⁾Leakage inductance L_σand Stray capacity C_σdue to dynamic test circuit in Figure E.

²⁾Includes Reverse Recovery Losses from IKW30N60T due to dynamic test circuit in Figure E.

Rev. 2.2 Dec-04

Power Semiconductors

IGP30N60T

IGW30N60T

TrenchStop Series

100A

t_p=2µs

90A

80A

70A

60A

50A

40A

30A

20A

10A

10µs

10A

T_C=80°C

50µs

T_C=110°C

1ms

I_c

10ms

I_c

0.1A

100Hz

1kHz

10kHz

100kHz

10V

100V

1000V

f, SWITCHING FREQUENCY

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of

Figure 2. Safe operating area

switching frequency

(D = 0, T_C= 25°C, T_j≤175°C;

(T_j≤ 175°C, D = 0.5, V_CE= 400V,

V_GE=15V)

_GE= 0/+15V, R_G= 10Ω)

50A

40A

30A

20A

10A

160W

120W

80W

40W

25°C

75°C

125°C

25°C

50°C

75°C 100°C 125°C 150°C

T_C, CASE TEMPERATURE

Figure 3. Power dissipation as a function of

case temperature

Figure 4. Collector current as a function of

case temperature

(T_j≤ 175°C)

(V_GE≥ 15V, T_j≤ 175°C)

Rev. 2.2 Dec-04

Power Semiconductors

IGP30N60T

IGW30N60T

TrenchStop Series

80A

70A

60A

50A

40A

30A

20A

10A

50A

_GE=20V

15V

_GE=20V

40A

30A

20A

10A

15V

13V

11V

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic

Figure 6. Typical output characteristic

(T_j= 25°C)

(T_j= 175°C)

2.5V

50A

40A

30A

20A

I_C=60A

2.0V

1.5V

1.0V

0.5V

0.0V

I_C=30A

I_C=15A

T_J=175°C

10A

25°C

0°C

50°C

100°C

150°C

_GE, GATE-EMITTER VOLTAGE

Figure 7. Typical transfer characteristic

T_J, JUNCTION TEMPERATURE

Figure 8. Typical collector-emitter

(V_CE=20V)

saturation voltage as a function of

junction temperature

(V_GE= 15V)

Rev. 2.2 Dec-04

Power Semiconductors

IGP30N60T

IGW30N60T

TrenchStop Series

t_d(off)

t_f

100ns

10ns

1ns

t_f

t_d(on)

100ns

t_d(on)

t_r

10ns

10A

20A

30A

10Ω

20Ω

30Ω

40Ω

I_C, COLLECTOR CURRENT

R_G, GATE RESISTOR

Figure 9. Typical switching times as a

function of collector current

(inductive load, T_J=175°C,

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, T_J= 175°C,

_CE= 400V, V_GE= 0/15V, R_G= 10ꢀ,

V_CE= 400V, V_GE= 0/15V, I_C= 30A,

Dynamic test circuit in Figure E)

t_d(off)

max.

typ.

100ns

min.

t_f

t_d(on)

t_r

10ns

25°C

50°C

75°C 100°C 125°C 150°C

-50°C

0°C

50°C

100°C

150°C

T_J, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

Figure 12. Gate-emitter threshold voltage as

a function of junction temperature

(I_C= 0.43mA)

function of junction temperature

(inductive load, V_CE= 400V,

_GE= 0/15V, I_C= 30A, R_G=10ꢀ,

Dynamic test circuit in Figure E)

Rev. 2.2 Dec-04

Power Semiconductors

IGP30N60T

IGW30N60T

TrenchStop Series

*) E_onand E_tsinclude losses

due to diode recovery

E_ts*

5.0mJ

4.0mJ

3.0mJ

2.0mJ

1.0mJ

0.0mJ

due to diode recovery

E_ts*

3.0mJ

2.0mJ

1.0mJ

0.0mJ

E_off

E_on

E_on*

10A

20A

30A

40A

50A

0Ω

10Ω

20Ω

30Ω

40Ω

I_C, COLLECTOR CURRENT

R_G, GATE RESISTOR

Figure 13. Typical switching energy losses

Figure 14. Typical switching energy losses

as a function of collector current

as a function of gate resistor

(inductive load, T_J= 175°C,

_CE= 400V, V_GE= 0/15V, R_G= 10ꢀ,

V_CE= 400V, V_GE= 0/15V, I_C= 30A,

Dynamic test circuit in Figure E)

*) E_onand E_tsinclude losses

1.6mJ

1.4mJ

1.2mJ

1.0mJ

0.8mJ

0.6mJ

0.4mJ

0.2mJ

0.0mJ

*) E_onand E_tsinclude losses

due to diode recovery

E_ts*

due to diode recovery

3.0mJ

2.5mJ

2.0mJ

1.5mJ

1.0mJ

0.5mJ

0.0mJ

E_ts*

E_off

E_on

E_on*

25°C 50°C

75°C 100°C 125°C 150°C

300V 350V 400V 450V 500V 550V

T_J, JUNCTION TEMPERATURE

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 15. Typical switching energy losses

as a function of junction

temperature

Figure 16. Typical switching energy losses

as a function of collector emitter

voltage

(inductive load, V_CE= 400V,

(inductive load, T_J= 175°C,

_GE= 0/15V, I_C= 30A, R_G= 10ꢀ,

V_GE= 0/15V, I_C= 30A, R_G= 10ꢀ,

Dynamic test circuit in Figure E)

Rev. 2.2 Dec-04

Power Semiconductors

IGP30N60T

IGW30N60T

TrenchStop Series

C_iss

1nF

15V

10V

120V

480V

C_oss

100pF

C_rss

10V

20V

30V

40V

0nC 30nC 60nC 90nC 120nC 150nC 180nC

_GE, GATE CHARGE

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge

Figure 18. Typical capacitance as a function

(I_C=30 A)

of collector-emitter voltage

(V_GE=0V, f = 1 MHz)

12µs

10µs

8µs

400A

300A

200A

100A

6µs

4µs

2µs

0µs

10V

11V

12V

13V

14V

12V

14V

16V

18V

_GE, GATE-EMITTETR VOLTAGE

V_GE, GATE-EMITETR VOLTAGE

Figure 19. Typical short circuit collector

current as a function of gate-

emitter voltage

Figure 20. Short circuit withstand time as a

function of gate-emitter voltage

(V_CE=600V, start at T_J=25°C,

_Jmax<150°C)

(V_CE≤ 400V, T_j≤ 150°C)

Rev. 2.2 Dec-04

Power Semiconductors

IGP30N60T

IGW30N60T

TrenchStop Series

D=0.5

0.2

10^-1K/W

0.1

R , ( K / W )

0.29566

0.25779

0.19382

0.05279

τ , ( s )

6.478*10^-2

6.12*10^-3

4.679*10^-4

6.45*10^-5

R₂

0.05

R₁

0.02

0.01

10^-2K/W

C₁=τ₁/R₁C₂=τ₂/R₂

single pulse

1µs 10µs 100µs 1ms 10ms 100ms

t_P, PULSE WIDTH

Figure 21. IGBT transient thermal resistance

(D = t_p/ T)

Rev. 2.2 Dec-04

Power Semiconductors

IGP30N60T

IGW30N60T

TrenchStop Series

Dimensions

[mm]

TO-220AB

symbol

[inch]

min

9.70

14.88

0.65

3.55

2.60

6.00

13.00

4.35

0.38

0.95

max

10.30

15.95

0.86

3.7

min

max

0.3819

0.5858

0.0256

0.1398

0.1024

0.2362

0.5118

0.1713

0.0150

0.0374

0.4055

0.6280

0.0339

0.1457

0.1181

0.2677

0.5512

0.1870

0.0256

0.0520

3.00

6.80

14.00

4.75

0.65

1.32

2.54 typ.

0.1 typ.

4.30

4.50

1.40

2.72

0.1693

0.0461

0.0906

0.1772

0.0551

0.1071

1.17

2.30

dimensions

TO-247AC

symbol

[mm]

[inch]

min

4.78

2.29

1.78

1.09

1.73

2.67

max

5.28

2.51

2.29

1.32

2.06

3.18

min

max

0.1882 0.2079

0.0902 0.0988

0.0701 0.0902

0.0429 0.0520

0.0681 0.0811

0.1051 0.1252

0.0299 max

0.76 max

20.80

15.65

5.21

21.16

16.15

5.72

0.8189 0.8331

0.6161 0.6358

0.2051 0.2252

0.7799 0.8142

0.1402 0.1941

0.1421

19.81

3.560

20.68

4.930

3.61

6.12

6.22

0.2409 0.2449

Rev. 2.2 Dec-04

Power Semiconductors

IGP30N60T

IGW30N60T

TrenchStop Series

i,v

t_{r r}=t_S+t_F

di_F/dt

Q_{r r}=Q_S+Q_F

t_{r r}

I_F

t_S

t_F

Q_S

10% I_{r r m}

Q_F

I_{r r m}

di_{r r}/dt

V_R

90% I_{r r m}

Figure C. Definition of diodes

switching characteristics

τ₁

τ₂

r ₂

τ_n

r₁

r _n

T (t)

p(t)

r ₂

r₁

r_n

Figure A. Definition of switching times

Figure D. Thermal equivalent

circuit

Figure E. Dynamic test circuit

Figure B. Definition of switching losses

Rev. 2.2 Dec-04

Power Semiconductors

IGP30N60T

IGW30N60T

TrenchStop Series

Published by

Infineon Technologies AG,

Bereich Kommunikation

St.-Martin-Strasse 53,

D-81541 München

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,

descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon

Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question

please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written

approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of

that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or

systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect

human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Rev. 2.2 Dec-04

Power Semiconductors

IGP30N60T [INFINEON]

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