IHW40N60T [INFINEON]

Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode; 低损耗DuoPack ： IGBT在TRENCHSTOP - 技术与反并联二极管


型号：	IHW40N60T
厂家：	Infineon
描述：	Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode 低损耗DuoPack ： IGBT在TRENCHSTOP - 技术与反并联二极管晶体二极管晶体管功率控制双极性晶体管栅局域网
文件：	总12页 (文件大小：385K)
中文：	中文翻译
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IHW40N60T

Soft Switching Series

Low Loss DuoPack : IGBT in TrenchStop -technology with anti-parallel diode

Features:

•

Very low V_CE(sat)1.5 V (typ.)

Maximum Junction Temperature 175 °C

Short circuit withstand time – 5µs

TrenchStop and Fieldstop technology for 600 V applications

offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- low V_CE(sat)

PG-TO-247-3-21

•

Positive temperature coefficient in V_CE(sat)

Low EMI

Low Gate Charge

Qualified according to JEDEC¹for target applications

Pb-free lead plating; RoHS compliant

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Applications:

•

Inductive Cooking

Soft Switching Applications

Type

V_CE

I_C

V_{CE(sat),Tj=25°C}T_j,max

1.55V

Marking

Package

IHW40N60T

600V

40A

H40T60

PG-TO-247-3-21

175°C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

DC collector current, limited by T_jmax

T_C= 25°C

V_CE

I_C

600

T_C= 100°C

Pulsed collector current, t_plimited by T_jmax

I_{Cpul s}

I_F

120

Turn off safe operating area (V_CE≤ 600V, T_j≤ 175°C)

Diode forward current, limited by T_jmax

T_C= 25°C

T_C= 100°C

Diode pulsed current, t_plimited by T_jmax

Gate-emitter voltage

Transient Gate-emitter voltage (t_p< 5 ms)

Short circuit withstand time²⁾

I_{Fpul s}

V_{G E}

±20

±25

t_SC

µs

V_GE= 15V, V_CC≤ 400V, T_j≤ 150°C

P_{t ot}

T_j

T_stg

303

Power dissipation T_C= 25°C

Operating junction temperature

Storage temperature

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

-40...+175

-55...+175

260

°C

¹J-STD-020 and JESD-022

²⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

Rev. 2.2 Apr. 06

Power Semiconductors

IHW40N60T

Soft Switching Series

Thermal Resistance

Parameter

Symbol

Conditions

Max. Value

0.49

Unit

Characteristic

IGBT thermal resistance,

junction – case

Diode thermal resistance,

junction – case

Thermal resistance,

junction – ambient

R_{t hJC}

R_{t hJCD}

R_{t hJA}

K/W

0.76

Electrical Characteristic, at T_j= 25 °C, unless otherwise specified

Value

Typ.

Parameter

Symbol

Conditions

Unit

min.

max.

Static Characteristic

Collector-emitter breakdown voltage V_{( BR)CES}

_{G E}=0V, I_C=0.5mA

600

Collector-emitter saturation voltage

V_{C E( sat )}V_{G E}= 15V, I_C=40A

T_j=25°C

1.55

1.9

2.05

T_j=175°C

Diode forward voltage

V_F

V_{G E}=0V, I_F=20A

1.1

1.05

T_j=25°C

T_j=175°C

I_C=0.8mA,

Gate-emitter threshold voltage

V_{G E(t h)}

I_CES

4.1

4.9

5.7

_CE=V_{G E}

Zero gate voltage collector current

_CE=600V,

µA

_{G E}=0V

T_j=25°C

T_j=175°C

1000

100

Gate-emitter leakage current

Transconductance

I_GES

g_fs

_CE=0V,V_{G E}=20V

_CE=20V, I_C=40A

Integrated gate resistor

R_{G int}

Ω

Dynamic Characteristic

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate charge

C_iss

C_oss

C_rss

_CE=25V,

_{G E}=0V,

2423

113

f=1MHz

Q_Gate

_CC=480V, I_C=40A

_{G E}=15V

215

Internal emitter inductance

L_E

measured 5mm (0.197 in.) from case

Rev. 2.2 Apr. 06

Power Semiconductors

IHW40N60T

Soft Switching Series

Switching Characteristic, Inductive Load, at T_j=25 °C

Value

Unit

Parameter

Symbol

Conditions

min.

Typ.

max.

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

t_d(on)

t_r

t_d(off)

t_f

E_on

E_off

E_{t s}

T_j=25°C,

_CC=400V,I_C=40A,

_{G E}=0/15V,

186

66.3

0.92

R_G=5.6 Ω,

L_σ¹⁾=40nH,

C_σ¹⁾=30pF

Energy losses include

“tail” and diode

reverse recovery.

Switching Characteristic, Inductive Load, at T_j=175 °C

Value

Typ.

Parameter

Symbol

Conditions

Unit

min.

max.

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

t_d(on)

t_r

t_d(off)

t_f

E_on

E_off

E_{t s}

T_j=175°C,

_CC=400V,I_C=40A,

_{G E}=0/15V,

196

76.5

1.4

R_G= 5.6 Ω

L_σ¹⁾=40nH,

C_σ¹⁾=30pF

Energy losses include

“tail” and diode

reverse recovery.

¹⁾Leakage inductance L_σand Stray capacity C_σdue to dynamic test circuit in Figure E.

Rev. 2.2 Apr. 06

Power Semiconductors

IHW40N60T

Soft Switching Series

140A

120A

100A

80A

60A

40A

20A

100A

t_p=1µs

2µs

T_C=80°C

T_C=110°C

10A

10µs

50µs

I_c

1ms

10ms

10Hz

100Hz

1kHz

10kHz

100kHz

10V

100V

1000V

f, SWITCHING FREQUENCY

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of

switching frequency for triangular

current (E_on= 0, hard turn-off)

Figure 2. Safe operating area

(D = 0, T_C= 25°C, T_j≤175°C;

V_GE=15V)

(T_j≤ 175°C, D = 0.5, V_CE= 400V,

V_GE= 0/+15V, R_G= 5.6Ω)

350W

300W

250W

200W

150W

100W

50W

60A

40A

20A

25°C

50°C

75°C

100°C 125°C 150°C

25°C

75°C

125°C

T_C, CASE TEMPERATURE

Figure 3. Power dissipation as a function of

case temperature

Figure 4. Collector current as a function of

case temperature

(T_j≤ 175°C)

(V_GE≥ 15V, T_j≤ 175°C)

Rev. 2.2 Apr. 06

Power Semiconductors

IHW40N60T

Soft Switching Series

100A

80A

60A

40A

20A

_GE=20V

15V

_GE=20V

80A

60A

40A

20A

15V

13V

11V

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic

Figure 6. Typical output characteristic

(T_j= 25°C)

(T_j= 175°C)

2.5V

2.0V

1.5V

1.0V

0.5V

0.0V

I_C=80A

100A

80A

I_C=40A

I_C=20A

60A

40A

T_J=175°C

20A

25°C

10V

0°C

50°C

100°C

150°C

_GE, GATE-EMITTER VOLTAGE

Figure 7. Typical transfer characteristic

T_J, JUNCTION TEMPERATURE

Figure 8. Typical collector-emitter

(V_CE=20V)

saturation voltage as a function of

junction temperature

(V_GE= 15V)

Rev. 2.2 Apr. 06

Power Semiconductors

IHW40N60T

Soft Switching Series

t_d(off)

100ns

t_f

100ns

t_f

10ns

10Ω

20Ω

20A

40A

60A

I_C, COLLECTOR CURRENT

R_G, GATE RESISTOR

Figure 9. Typical switching times as a

function of collector current

(inductive load, T_J=175°C,

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, T_J= 175°C,

_CE= 400V, V_GE= 0/15V, R_G= 5.6ꢀ,

V_CE= 400V, V_GE= 0/15V, I_C= 40A,

Dynamic test circuit in Figure E)

t_d(off)

max.

typ.

100ns

t_f

min.

10ns

25°C

50°C

75°C

100°C 125°C 150°C

25°C

50°C

75°C 100°C 125°C 150°C

T_J, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, V_CE= 400V,

Figure 12. Gate-emitter threshold voltage as

a function of junction temperature

(I_C= 0.8mA)

_GE= 0/15V, I_C= 40A, R_G=5.6ꢀ,

Dynamic test circuit in Figure E)

Rev. 2.2 Apr. 06

Power Semiconductors

IHW40N60T

Soft Switching Series

2.5mJ

2.0mJ

1.5mJ

1.0mJ

0.5mJ

0.0mJ

2.0mJ

1.5mJ

1.0mJ

0.5mJ

E_off

0.0mJ

0Ω

10Ω

20Ω

0A 10A 20A 30A 40A 50A 60A 70A

I_C, COLLECTOR CURRENT

R_G, GATE RESISTOR

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, T_J= 175°C,

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, T_J= 175°C,

_CE= 400V, V_GE= 0/15V, R_G= 5.6ꢀ,

V_CE= 400V, V_GE= 0/15V, I_C= 40A,

Dynamic test circuit in Figure E)

1.4mJ

1.2mJ

1.0mJ

0.8mJ

0.6mJ

0.4mJ

0.2mJ

0.0mJ

E_off

1.5mJ

1.0mJ

0.5mJ

0.0mJ

E_off

300V

350V

400V

450V

25°C

50°C

75°C 100°C 125°C 150°C

T_J, JUNCTION TEMPERATURE

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 15. Typical switching energy losses

as a function of junction

Figure 16. Typical switching energy losses

as a function of collector emitter

voltage

temperature

(inductive load, V_CE= 400V,

V_GE= 0/15V, I_C= 40A, R_G= 5.6ꢀ,

Dynamic test circuit in Figure E)

(inductive load, T_J= 175°C,

_GE= 0/15V, I_C= 40A, R_G= 5.6ꢀ,

Dynamic test circuit in Figure E)

Rev. 2.2 Apr. 06

Power Semiconductors

IHW40N60T

Soft Switching Series

C_iss

12V

1nF

120V

480V

C_oss

C_rss

100pF

10V

20V

30V

40V

0nC 30nC 60nC 90nC 120nC150nC180nC210nC

Q_GE, GATE CHARGE

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge

Figure 18. Typical capacitance as a function

(I_C=40 A)

of collector-emitter voltage

(V_GE=0V, f = 1 MHz)

D=0.5

0.2

10^-1K/W

R , ( K /W )

τ , ( s )

8.74*10^-2

1.07*10^-2

7.49*10^-4

8.85*10^-5

7.39*10^-6

10^-1K/W

0.1

0.093

R , ( K /W )

0.151

τ , ( s )

1.26*10^-1

9.7*10^-3

1.4*10^-3

1.51*10^-4

0.119

0.0828

0.0386

0.0221

0.223

0.05

0.02

0.05

0.02

0.01

single pulse

0.273

0.111

R₁

R₂

R₁

R₂

0.01

single pulse

C₁=τ₁/R₁C₂=τ₂/R₂

10^-2K/W

C₁=τ₁/R₁C₂=τ₂/R₂

10^-2K/W

10µs

100µs

1ms

10ms

100ms

1µs

10µs 100µs 1ms 10ms 100ms

t_P, PULSE WIDTH

Figure 19. IGBT transient thermal resistance

Figure 20. Diode transient thermal

(D = t_p/ T)

impedance as a function of pulse

width

(D=t_P/T)

Rev. 2.2 Apr. 06

Power Semiconductors

IHW40N60T

Soft Switching Series

70A

60A

50A

40A

30A

20A

10A

I_F=40A

T_J=25°C

1.0V

0.5V

0.0V

175°C

20A

10A

0.0V

0.5V

1.0V

1.5V

25°C

50°C

75°C 100°C 125°C 150°C

V_F, FORWARD VOLTAGE

T_J, JUNCTION TEMPERATURE

Figure 21. Typical diode forward current as

Figure 22. Typical diode forward voltage as a

a function of forward voltage

function of junction temperature

Rev. 2.2 Apr. 06

Power Semiconductors

IHW40N60T

Soft Switching Series

PG-TO247-3-21

Rev. 2.2 Apr. 06

Power Semiconductors

IHW40N60T

Soft Switching Series

i,v

t_{r r}=t_S+t_F

di_F/dt

Q_{r r}=Q_S+Q_F

t_{r r}

I_F

t_S

t_F

Q_S

10% I_{r r m}

Q_F

I_{r r m}

di_{r r}/dt

V_R

90% I_{r r m}

Figure C. Definition of diodes

switching characteristics

τ₁

τ₂

r ₂

τ_n

r₁

r _n

T (t)

p(t)

r ₂

r₁

r_n

Figure A. Definition of switching times

Figure D. Thermal equivalent

circuit

Figure E. Dynamic test circuit

Figure B. Definition of switching losses

Rev. 2.2 Apr. 06

Power Semiconductors

IHW40N60T

Soft Switching Series

Edition 2006-01

Published by

Infineon Technologies AG

81726 München, Germany

Attention please!

The information given in this data sheet shall in no event be regarded as a guarantee of conditions or

characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device, Infineon Technologies

hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types

in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express

written approval of Infineon Technologies, if a failure of such components can reasonably be expected to

cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or

system. Life support devices or systems are intended to be implanted in the human body, or to support

and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health

of the user or other persons may be endangered.

Rev. 2.2 Apr. 06

Power Semiconductors

IHW40N60T [INFINEON]

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