IKFW50N65ES5 [INFINEON]
IGBT TRENCHSTOP™ Advanced Isolation;
| 型号： | IKFW50N65ES5 |
| 厂家： | 
Infineon |
| 描述： | IGBT TRENCHSTOP™ Advanced Isolation 双极性晶体管 |
| 文件： | 总15页 (文件大小：1459K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IKFW50N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
TRENCHSTOPTMꢀ5ꢀhighꢀspeedꢀsoftꢀswitchingꢀIGBTꢀcopackedꢀwithꢀfullꢀcurrent
ratedꢀRAPIDꢀ1ꢀfastꢀandꢀsoftꢀantiparallelꢀdiode
ꢀ
C
FeaturesꢀandꢀBenefits:
HighꢀspeedꢀS5ꢀtechnologyꢀoffering
•ꢀHighꢀspeedꢀsmoothꢀswitchingꢀdeviceꢀforꢀhardꢀ&ꢀsoftꢀswitching
•ꢀVeryꢀLowꢀVCEsat,ꢀ1.35Vꢀatꢀnominalꢀcurrent
•ꢀPlugꢀandꢀplayꢀreplacementꢀofꢀpreviousꢀgenerationꢀIGBTs
•ꢀ650Vꢀbreakdownꢀvoltage
G
E
•ꢀLowꢀgateꢀchargeꢀQG
•ꢀIGBTꢀcopackedꢀwithꢀfullꢀratedꢀRAPIDꢀ1ꢀfastꢀantiparallelꢀdiode
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
http://www.infineon.com/igbt/
Applications:
•ꢀResonantꢀconverters
•ꢀUninterruptibleꢀpowerꢀsupplies
•ꢀWeldingꢀconverters
Fully isolated package TO-247
•ꢀMidꢀtoꢀhighꢀrangeꢀswitchingꢀfrequencyꢀconverters
ProductꢀValidation:
Qualifiedꢀforꢀindustrialꢀapplicationsꢀaccordingꢀtoꢀtheꢀrelevantꢀtests
ofꢀJEDEC47/20/22
Packageꢀpinꢀdefinition:
•ꢀPinꢀ1ꢀ-ꢀgate
•ꢀPinꢀ2ꢀ&ꢀbacksideꢀ-ꢀcollector
•ꢀPinꢀ3ꢀ-ꢀemitter
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
1.35V 175°C
Marking
Package
IKFW50N65ES5
650V
40A
K50EES5
PG-HSIP247-3-2
Datasheet
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument
Vꢀ2.1
www.infineon.com
2020-07-09
IKFW50N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Datasheet
2
Vꢀ2.1
2020-07-09
IKFW50N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VCE
650
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Thꢀ=ꢀ25°C
Thꢀ=ꢀ65°C
Thꢀ=ꢀ65°C
74.0
59.0
IC
A
69.01)
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
160.0
160.0
A
A
Turn off safe operating area
VCEꢀ≤ꢀ650V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs
-
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Thꢀ=ꢀ25°C
Thꢀ=ꢀ65°C
IF
74.0
59.0
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
VGE
160.0
A
V
Gate-emitter voltage
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)
±20
±30
PowerꢀdissipationꢀThꢀ=ꢀ25°C
PowerꢀdissipationꢀThꢀ=ꢀ65°C
127.0
93.0
Ptot
W
Operating junction temperature
Storage temperature
Tvj
-40...+175
-55...+150
°C
°C
Tstg
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
IsolationꢀvoltageꢀRMS,ꢀfꢀ=ꢀ50/60Hz,ꢀtꢀ=ꢀ1min2)
M
Nm
V
Visol
2500
ThermalꢀResistance
Value
min. typ. max.
Parameter
Symbol Conditions
Unit
RthꢀCharacteristics
IGBT thermal resistance,3)
junction - heatsink
Diode thermal resistance,3)
junction - heatsink
Rth(j-h)
Rth(j-h)
Rth(j-a)
-
-
-
1.01 1.19 K/W
1.14 1.34 K/W
Thermal resistance
junction - ambient
-
65 K/W
1) Equivalent current rating in TO-247-3 at Th = 65°C using reference insulation material: 152µm, 1.3 W/mK, standard polyimide based reinforced carrier
insulator
2) For a proper handling and assembly of the advanced isolation device in the application refer to the note at the package drawing.
3) At force on body F = 500N, Ta = 25ºC
Datasheet
3
Vꢀ2.1
2020-07-09
IKFW50N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.50mA
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ40.0A
650
-
-
V
V
Collector-emitter saturation voltage VCEsat
Tvjꢀ=ꢀ25°C
-
-
1.35 1.70
1.60
Tvjꢀ=ꢀ175°C
-
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ40.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Diode forward voltage
VF
-
-
1.45 1.70
V
V
1.39
-
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ0.40mA,ꢀVCEꢀ=ꢀVGE
3.2
4.0
4.8
VCEꢀ=ꢀ650V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Zero gate voltage collector current ICES
-
-
-
50
-
µA
1700
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ40.0A
-
-
-
100
-
nA
S
44.0
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
2510
70
-
-
-
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V
fꢀ=ꢀ1000kHz
Output capacitance
Coes
Cres
pF
Reverse transfer capacitance
9
VCCꢀ=ꢀ520V,ꢀICꢀ=ꢀ40.0A,
VGEꢀ=ꢀ15V
Gate charge
QG
LE
-
-
95.0
13.0
-
-
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
19
18
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ40.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ10.0Ω,ꢀRG(off)ꢀ=ꢀ10.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
130
23
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.86
0.40
1.26
mJ
mJ
mJ
Turn-off energy
Total switching energy
Datasheet
4
Vꢀ2.1
2020-07-09
IKFW50N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
69
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ40.0A,
Qrr
1.11
23.0
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ980A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-2000
-
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
20
16
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ150°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ40.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ10.0Ω,ꢀRG(off)ꢀ=ꢀ10.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
156
48
ns
ns
Turn-on energy
Eon
Eoff
Ets
1.20
0.69
1.89
mJ
mJ
mJ
Turn-off energy
Total switching energy
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
115
2.62
38.0
-
-
-
ns
µC
A
Tvjꢀ=ꢀ150°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ40.0A,
Qrr
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ980A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-1350
-
A/µs
Datasheet
5
Vꢀ2.1
2020-07-09
IKFW50N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
140
120
100
80
90
80
70
60
50
40
30
20
10
0
60
40
20
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
Th,ꢀHEATSINKꢀTEMPERATUREꢀ[°C]
Th,ꢀHEATSINKꢀTEMPERATUREꢀ[°C]
Figure 1. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀheatsink
Figure 2. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀheatsink
temperature
temperature
(Tj≤175°C)
(VGE≥15V,ꢀTj≤175°C)
160
160
VGE = 20V
18V
15V
12V
10V
8V
VGE = 20V
18V
15V
12V
10V
8V
140
120
100
80
140
120
100
80
7V
7V
6V
6V
60
60
5V
5V
40
40
20
20
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3. Typicalꢀoutputꢀcharacteristic
(Tj=25°C)
Figure 4. Typicalꢀoutputꢀcharacteristic
(Tj=175°C)
Datasheet
6
Vꢀ2.1
2020-07-09
IKFW50N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
160
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Tvj = 25°C
Tvj = 150°C
IC = 20A
IC = 40A
IC = 80A
140
120
100
80
60
40
20
0
0
2
4
6
8
10
25
50
75
100
125
150
175
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 5. Typicalꢀtransferꢀcharacteristic
(VCE=20V)
Figure 6. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas
aꢀfunctionꢀofꢀjunctionꢀtemperature
(VGE=15V)
1000
1000
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
100
10
1
100
10
1
0
20
40
60
80
100
120
0
10
20
30
40
50
60
70
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
RG,ꢀGATEꢀRESISTORꢀ[Ω]
Figure 7. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate
resistor
collectorꢀcurrent
(ind.ꢀload,ꢀTj=150°C,ꢀVCE=400V,ꢀVGE=0/15V,
RG=10Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
(ind.ꢀload,ꢀTj=150°C,ꢀVCE=400V,ꢀVGE=0/15V,
IC=40A,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
Datasheet
7
Vꢀ2.1
2020-07-09
IKFW50N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
1000
6
5
4
3
2
1
0
td(off)
tf
td(on)
tr
typ.
min.
max.
100
10
1
25
50
75
100
125
150
175
25
50
75
100
125
150
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
junctionꢀtemperature
Figure 10. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
(ind.ꢀload,ꢀVCE=400V,ꢀVGE=0/15V,ꢀIC=40A,
rG=10Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
(IC=0.40mA)
8
4.0
Eoff
Eon
Eoff
Eon
Ets
Ets
7
3.5
6
5
4
3
2
1
0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
20
40
60
80
100
120
0
10
20
30
40
50
60
70
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
RG,ꢀGATEꢀRESISTORꢀ[Ω]
Figure 11. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀcurrent
functionꢀofꢀgateꢀresistor
(ind.ꢀload,ꢀTj=150°C,ꢀVCE=400V,ꢀVGE=0/15V,
RG=10Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
(ind.ꢀload,ꢀTj=150°C,ꢀVCE=400V,ꢀVGE=0/15V,
IC=40A,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
Datasheet
8
Vꢀ2.1
2020-07-09
IKFW50N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
3.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Eoff
Eon
Ets
Eoff
Eon
Ets
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
175
200
250
300
350
400
450
500
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(ind.ꢀload,ꢀTj=150°C,ꢀVGE=0/15V,ꢀIC=40A,
RG=10Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
(indꢀload,ꢀVCE=400V,ꢀVGE=0/15V,ꢀIC=40A,
RG=10Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
16
VCCꢀ=ꢀ130V
VCCꢀ=ꢀ520V
Cies
Coes
1E+4
Cres
14
12
10
8
1000
100
10
1
6
4
2
0
0
20
40
60
80
100
0
10
20
30
QGE,ꢀGATEꢀCHARGEꢀ[nC]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 15. Typicalꢀgateꢀcharge
(IC=40A)
Figure 16. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
(VGE=0V,ꢀf=1MHz)
Datasheet
9
Vꢀ2.1
2020-07-09
IKFW50N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
1
1
D = 0.5
0.2
D = 0.5
0.1
0.2
0.05
0.1
0.1
0.1
0.02
0.05
0.01
0.02
single pulse
0.01
single pulse
0.01
0.01
i:
ri[K/W]: 5.1E-3 0.1557 0.199 0.2083
τi[s]:
1
2
3
4
5
6
7
i:
ri[K/W]: 0.01282 0.1855 0.2348 0.215
τi[s]: 2.6E-5
1
2
3
4
5
6
7
0.3082
0.1853
0.01572
0.3072
0.1842
0.01563
2.0E-5 2.9E-4 2.8E-3 0.023225 0.288506 1.294172 18.69894
3.0E-4 2.7E-3 0.022941 0.288184 1.292329 18.70911
0.001
1E-6 1E-5 1E-4 0.001 0.01
0.001
0.1
1
10
1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1
1
10
tp,ꢀPULSEꢀWIDTHꢀ[s]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 17. IGBTꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidth
Figure 18. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidth
(D=tp/T)
(D=tp/T)
180
3.5
Tvj = 25°C, IF = 40A
Tvj = 150°C, IF = 40A
Tvj = 25°C, IF = 40A
Tvj = 150°C, IF = 40A
160
3.0
2.5
2.0
1.5
1.0
0.5
0.0
140
120
100
80
60
40
20
0
400
500
600
700
800
900
1000
400
500
600
700
800
900
1000
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 19. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction Figure 20. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
(VR=400V)
Datasheet
10
Vꢀ2.1
2020-07-09
IKFW50N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
40
0
-250
Tvj = 25°C, IF = 40A
Tvj = 150°C, IF = 40A
Tvj = 25°C, IF = 40A
Tvj = 150°C, IF = 40A
35
30
25
20
15
10
5
-500
-750
-1000
-1250
-1500
-1750
-2000
-2250
-2500
0
400
500
600
700
800
900
1000
400
500
600
700
800
900
1000
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
Figure 22. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
(VR=400V)
120
2.50
Tvj = 25°C
Tvj = 150°C
IF = 20A
IF = 40A
IF = 80A
2.25
100
80
60
40
20
0
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.0
0.5
1.0
1.5
2.0
2.5
3.0
25
50
75
100
125
150
175
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 23. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction Figure 24. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature
Datasheet
11
Vꢀ2.1
2020-07-09
IKFW50N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
PG-HSIP247-3-2
MILLIMETERS
MILLIMETERS
DIMENSIONS
DIMENSIONS
MIN.
-
MAX.
5.18
4.90
2.66
0.28
1.50
0.51
1.90
MIN.
MAX.
A
A1
A2
A3
A4
A5
A6
A7
b
e
5.44
4.70
2.16
0.20
1.30
0.31
1.70
E
15.70
13.68
15.90
13.88
E1
E2
E3
E4
E5
E6
L
DOCUMENT NO.
Z8B00195711
(6.00)
3.24
4.39
3.44
4.59
REVISION
01
(1.45)
(0.25)
0.76
18.01
2.26
1.50
3.50
5.70
6.06
0.96
18.21
2.46
1.70
3.70
5.90
6.26
SCALE 3:1
1.10
1.30
0 1 2 3 4 5 6 7 8mm
b1
b2
b3
c
(2.88)
(1.60)
L1
L2
P
-
0.15
0.70
EUROPEAN PROJECTION
0.50
22.70
16.96
2.34
-
P1
Q
D
22.90
17.16
2.54
D1
D2
D3
D4
0.30
ISSUE DATE
28.06.2019
4.35
4.55
Datasheet
12
Vꢀ2.1
2020-07-09
IKFW50N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
Testing Conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
Datasheet
13
Vꢀ2.1
2020-07-09
IKFW50N65ES5
TRENCHSTOPTMꢀ5ꢀAdvancedꢀIsolation
RevisionꢀHistory
IKFW50N65ES5
Revision:ꢀ2020-07-09,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.1
2020-07-09 Final Data Sheet
Datasheet
14
Vꢀ2.1
2020-07-09
Trademarks
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.
ꢀ
ꢀ
ꢀ
ꢀ
Publishedꢀby
InfineonꢀTechnologiesꢀAG
81726ꢀMünchen,ꢀGermany
©ꢀInfineonꢀTechnologiesꢀAGꢀ2020.
AllꢀRightsꢀReserved.
ImportantꢀNotice
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics
(“Beschaffenheitsgarantie”).ꢀWithꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀany
informationꢀregardingꢀtheꢀapplicationꢀofꢀtheꢀproduct,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀand
liabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitationꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthird
party.
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀof
theꢀproductꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀof
customer’sꢀtechnicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀthe
completenessꢀofꢀtheꢀproductꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Forꢀfurtherꢀinformationꢀonꢀtheꢀproduct,ꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearest
InfineonꢀTechnologiesꢀofficeꢀ(www.infineon.com).
PleaseꢀnoteꢀthatꢀthisꢀproductꢀisꢀnotꢀqualifiedꢀaccordingꢀtoꢀtheꢀAECꢀQ100ꢀorꢀAECꢀQ101ꢀdocumentsꢀofꢀtheꢀAutomotive
ElectronicsꢀCouncil.
Warnings
Dueꢀtoꢀtechnicalꢀrequirementsꢀproductsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion
pleaseꢀcontactꢀyourꢀnearestꢀInfineonꢀTechnologiesꢀoffice.
ExceptꢀasꢀotherwiseꢀexplicitlyꢀapprovedꢀbyꢀInfineonꢀTechnologiesꢀinꢀaꢀwrittenꢀdocumentꢀsignedꢀbyꢀauthorized
representativesꢀofꢀInfineonꢀTechnologies,ꢀInfineonꢀTechnologies’ꢀproductsꢀmayꢀnotꢀbeꢀusedꢀinꢀanyꢀapplicationsꢀwhereꢀa
failureꢀofꢀtheꢀproductꢀorꢀanyꢀconsequencesꢀofꢀtheꢀuseꢀthereofꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀresultꢀinꢀpersonalꢀinjury.
相关型号：
IKI04N60TXKSA1
Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
INFINEON
IKP03N120H2HKSA1
Insulated Gate Bipolar Transistor, 9.6A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
IKP03N120H2XKSA1
Insulated Gate Bipolar Transistor, 9.6A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
INFINEON
IKP03N120H2_08
HighSpeed 2-Technology with soft, fast recovery anti-parallel EmCon HE diode
INFINEON
©2020 ICPDF网 联系我们和版权申明