IKQ120N60T [INFINEON]
IGBT TRENCHSTOP™;
| 型号： | IKQ120N60T |
| 厂家： | 
Infineon |
| 描述： | IGBT TRENCHSTOP™ 双极性晶体管 |
| 文件： | 总16页 (文件大小：1911K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IKQ120N60T
TRENCHSTOPTMꢀseries
LowꢀLossꢀDuoPackꢀ:ꢀIGBTꢀinꢀTRENCHSTOPTMꢀandꢀFieldstopꢀtechnology
withꢀsoft,ꢀfastꢀrecoveryꢀanti-parallelꢀEmitterꢀControlledꢀdiode
ꢀ
C
E
Features:
•ꢀVeryꢀlowꢀꢀVCE(sat)ꢀ1.5Vꢀ(typ.)
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀShortꢀcircuitꢀwithstandꢀtimeꢀ5µs
•ꢀTRENCHSTOPTMꢀandꢀFieldstopꢀtechnologyꢀforꢀ600V
applicationsꢀoffers:
G
-ꢀveryꢀtightꢀparameterꢀdistribution
-ꢀhighꢀruggedness,ꢀtemperatureꢀstableꢀbehavior
-ꢀhighꢀswitchingꢀspeed
•ꢀPositiveꢀtemperatureꢀcoefficientꢀinꢀVCE(sat)
•ꢀLowꢀEMI
•ꢀLowꢀgateꢀchargeꢀQG
•ꢀIncreasedꢀcurrentꢀcapability
•ꢀGreenꢀpackage
•ꢀVeryꢀsoft,ꢀfastꢀrecoveryꢀanti-parallelꢀEmitterꢀControlledꢀHE
diode
Applications:
•ꢀGeneralꢀpurposeꢀinverters
•ꢀUninterruptibleꢀpowerꢀsupplies
•ꢀMotorꢀdrives
•ꢀMediumꢀtoꢀlowꢀswitchingꢀfrequencyꢀpowerꢀconverters
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
1.5V 175°C
Marking
Package
PG-TO247-3-46
IKQ120N60T
600V
120A
K120T60
Datasheet
www.infineon.com
PleaseꢀreadꢀtheꢀImportantꢀNoticeꢀandꢀWarningsꢀatꢀtheꢀendꢀofꢀthisꢀdocument
Vꢀ2.3
2017-11-13
IKQ120N60T
TRENCHSTOPTMꢀseries
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Datasheet
2
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IKQ120N60T
TRENCHSTOPTMꢀseries
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VCE
600
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Tcꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire
Tcꢀ=ꢀ135°C
IC
160.0
120.0
A
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
480.0
480.0
A
A
Turn off safe operating area
VCEꢀ≤ꢀ600V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs
-
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
Tcꢀ=ꢀ25°C
Tcꢀ=ꢀ124°C
IF
160.0
120.0
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
VGE
480.0
±20
A
V
Gate-emitter voltage
Short circuit withstand time
VGEꢀ=ꢀ15.0V,ꢀVCCꢀ≤ꢀ400V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvjꢀ=ꢀ150°C
tSC
µs
5
PowerꢀdissipationꢀTcꢀ=ꢀ25°C
Operating junction temperature
Storage temperature
Ptot
Tvj
833.0
W
°C
°C
-40...+175
-55...+150
Tstg
Soldering temperature,1)
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
ThermalꢀResistance
Value
min. typ. max.
Parameter
Symbol Conditions
Unit
RthꢀCharacteristics
IGBT thermal resistance,2)
junction - case
Diode thermal resistance,2)
junction - case
Rth(j-c)
Rth(j-c)
Rth(j-a)
-
-
-
-
-
-
0.18 K/W
0.30 K/W
40 K/W
Thermal resistance
junction - ambient
1) Package not recommended for surface mount application
2) Thermal resistance of thermal grease Rth(c-s) (case to heat sink) of more than 0.1K/W not included.
Datasheet
3
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IKQ120N60T
TRENCHSTOPTMꢀseries
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.20mA
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ120.0A
600
-
-
V
V
Collector-emitter saturation voltage VCEsat
Tvjꢀ=ꢀ25°C
-
-
1.50 2.00
1.90
Tvjꢀ=ꢀ175°C
-
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ120.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Diode forward voltage
VF
-
-
1.65 2.05
V
V
1.60
-
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ1.92mA,ꢀVCEꢀ=ꢀVGE
4.1
4.9
5.7
VCEꢀ=ꢀ600V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Zero gate voltage collector current ICES
-
-
-
40
-
µA
3000
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
-
-
-
100
-
nA
S
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ120.0A
75.0
none
Integrated gate resistor
rG
Ω
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
7530
446
-
-
-
Output capacitance
Coes
Cres
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
206
VCCꢀ=ꢀ480V,ꢀICꢀ=ꢀ120.0A,
VGEꢀ=ꢀ15V
Gate charge
QG
LE
-
-
703.0
13.0
-
-
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Short circuit collector current
Max. 1000 short circuits
Time between short circuits: ≥ 1.0s
VGEꢀ=ꢀ15.0V,ꢀVCCꢀ≤ꢀ400V,
tSCꢀ≤ꢀ5µs
Tvjꢀ=ꢀ175°C
IC(SC)
-
-
A
846
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
33
43
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ120.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ3.0Ω,ꢀRG(off)ꢀ=ꢀ3.0Ω,
Lσꢀ=ꢀ63nH,ꢀCσꢀ=ꢀ31pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
310
33
ns
ns
Turn-on energy
Eon
Eoff
Ets
4.10
2.80
6.90
mJ
mJ
mJ
Turn-off energy
Total switching energy
Datasheet
4
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IKQ120N60T
TRENCHSTOPTMꢀseries
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
280
3.50
25.0
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ120.0A,
diF/dtꢀ=ꢀ1100A/µs
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-500
-
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
33
51
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ175°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ120.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ3.0Ω,ꢀRG(off)ꢀ=ꢀ3.0Ω,
Lσꢀ=ꢀ63nH,ꢀCσꢀ=ꢀ31pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
355
43
ns
ns
Turn-on energy
Eon
Eoff
Ets
6.70
4.10
10.80
mJ
mJ
mJ
Turn-off energy
Total switching energy
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
410
10.80
45.0
-
-
-
ns
µC
A
Tvjꢀ=ꢀ175°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ120.0A,
diF/dtꢀ=ꢀ1000A/µs
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-520
-
A/µs
Datasheet
5
Vꢀ2.3
2017-11-13
IKQ120N60T
TRENCHSTOPTMꢀseries
900
800
700
600
500
400
300
200
100
0
100
10
not for linear use
1
0.1
1
10
100
1000
25
50
75
100
125
150
175
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1. Safeꢀoperatingꢀarea
Figure 2. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
(D=0,ꢀTC=25°C,ꢀTj≤175°C,ꢀVGE=0/15V,
tp=1µs)
temperature
(Tj≤175°C)
180
160
140
120
100
80
360
VGE=20V
15V
13V
11V
9V
320
280
240
200
160
120
80
8V
7V
6V
60
40
20
40
0
0
25
50
75
100
125
150
175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
Figure 4. Typicalꢀoutputꢀcharacteristic
(Tj=25°C)
(VGE≥15V,ꢀTj≤175°C)
Datasheet
6
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2017-11-13
IKQ120N60T
TRENCHSTOPTMꢀseries
360
360
320
280
240
200
160
120
80
VGE=20V
Tj=25°C
Tj=175°C
15V
13V
11V
9V
320
280
240
200
160
120
80
8V
7V
6V
40
40
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
2
4
6
8
10
12
14
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 5. Typicalꢀoutputꢀcharacteristic
(Tj=175°C)
Figure 6. Typicalꢀtransferꢀcharacteristic
(VCE=20V)
3.0
1000
IC=38A
IC=75A
IC=120A
IC=150A
2.5
td(off)
tf
td(on)
tr
2.0
1.5
1.0
0.5
0.0
100
10
0
25
50
75
100
125
150
175
0
25
50
75
100 125 150 175 200
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 7. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
aꢀfunctionꢀofꢀjunctionꢀtemperature
collectorꢀcurrent
(VGE=15V)
(inductiveꢀload,ꢀTj=175°C,ꢀVCE=400V,
VGE=15/0V,ꢀrG=3Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
7
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IKQ120N60T
TRENCHSTOPTMꢀseries
1E+4
1000
100
10
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
1000
100
10
0
5
10
15
20
25
25
50
75
100
125
150
175
rG,ꢀGATEꢀRESISTORꢀ[Ω]
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate Figure 10. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
resistor
junctionꢀtemperature
(inductiveꢀload,ꢀTj=175°C,ꢀVCE=400V,
VGE=15/0V,ꢀIC=120A,Dynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=15/0V,
IC=120A,ꢀrG=3Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
8
7
6
5
4
3
2
1
0
30
25
20
15
10
5
typ.
min.
max.
Eoff
Eon
Ets
0
0
25
50
75
100
125
150
0
40
80
120
160
200
240
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 11. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
ofꢀjunctionꢀtemperature
(IC=1,92mA)
functionꢀofꢀcollectorꢀcurrent
(inductiveꢀload,ꢀTj=175°C,ꢀVCE=400V,
VGE=15/0V,ꢀrG=3Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
Datasheet
8
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IKQ120N60T
TRENCHSTOPTMꢀseries
40
16
14
12
10
8
Eoff
Eon
Ets
Eoff
Eon
Ets
35
30
25
20
15
10
5
6
4
2
0
0
0
5
10
15
20
25
25
50
75
100
125
150
175
rG,ꢀGATEꢀRESISTORꢀ[Ω]
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistor
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=15/0V,
IC=120A,ꢀrG=3Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀTj=175°C,ꢀVCE=400V,
VGE=15/0V,ꢀIC=120A,Dynamicꢀtestꢀcircuitꢀin
Figure E)
16
14
12
10
8
16
Eoff
Eon
Ets
120V
480V
14
12
10
8
6
6
4
4
2
2
0
0
200
300
400
500
0
100 200 300 400 500 600 700 800
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
QGE,ꢀGATEꢀCHARGEꢀ[nC]
Figure 15. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(inductiveꢀload,ꢀTj=175°C,ꢀVGE=15/0V,
IC=120A,ꢀRG=3Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
Figure 16. Typicalꢀgateꢀcharge
(IC=120A)
Datasheet
9
Vꢀ2.3
2017-11-13
IKQ120N60T
TRENCHSTOPTMꢀseries
1600
1400
1200
1000
800
600
400
200
0
Cies
Coes
Cres
1E+4
1000
100
10
0
5
10
15
20
25
30
12
14
16
18
20
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 17. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
Figure 18. Typicalꢀshortꢀcircuitꢀcollectorꢀcurrentꢀasꢀa
functionꢀofꢀgate-emitterꢀvoltage
(VGE=0V,ꢀf=1MHz)
(VCE≤400V,ꢀTj≤150°C)
12
10
8
0.1
D=0.5
0.2
0.1
0.05
0.02
0.01
6
0.01
single pulse
4
2
i:
ri[K/W]: 0.02686799 0.0369369 0.1151423 3.0E-3
τi[s]: 2.1E-4 1.6E-3 0.01573455 0.2126417
1
2
3
4
0
0.001
1E-6
10
11
12
13
14
15
1E-5
1E-4
0.001
0.01
0.1
1
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 19. Shortꢀcircuitꢀwithstandꢀtimeꢀasꢀaꢀfunctionꢀof Figure 20. IGBTꢀtransientꢀthermalꢀimpedanceꢀasꢀa
gate-emitterꢀvoltage
functionꢀofꢀpulseꢀwidthꢀforꢀdifferentꢀduty
(VCE=400V,ꢀstartꢀatꢀTj=25°C,ꢀTjmax≤150°C)
cyclesꢀD
(D=tp/T)
Datasheet
10
Vꢀ2.3
2017-11-13
IKQ120N60T
TRENCHSTOPTMꢀseries
800
700
600
500
400
300
200
100
0
Tj=25°C, IF = 120A
Tj=175°C, IF = 120A
0.1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
0.01
i:
1
2
3
4
ri[K/W]: 0.05464681 0.08604638 0.1607048 4.1E-3
τi[s]: 2.1E-4 2.6E-3 0.01504089 0.2133931
0.001
1E-6
1E-5
1E-4
0.001
0.01
0.1
1
500
700
900
1100
1300
1500
tp,ꢀPULSEꢀWIDTHꢀ[s]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
Figure 22. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀpulseꢀwidthꢀforꢀdifferentꢀduty
cyclesꢀD
(D=tp/T)
(VR=400V,DynamicꢀtestꢀcircuitꢀinꢀFigureꢀE)
12
10
8
70
Tj=25°C, IF = 120A
Tj=175°C, IF = 120A
60
50
40
30
20
10
0
Tj=25°C, IF = 120A
Tj=175°C, IF = 120A
6
4
2
0
500
700
900
1100
1300
1500
500
700
900
1100
1300
1500
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 23. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
Figure 24. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V,ꢀDynamicꢀtestꢀcircuitꢀinꢀFigureꢀE)
(VR=400V,ꢀDynamicꢀtestꢀcircuitꢀinꢀFigureꢀE)
Datasheet
11
Vꢀ2.3
2017-11-13
IKQ120N60T
TRENCHSTOPTMꢀseries
0
360
300
240
180
120
60
Tj=25°C, IF = 120A
Tj=175°C, IF = 120A
Tj=25°C
Tj=175°C
-200
-400
-600
-800
-1000
-1200
0
500
700
900
1100
1300
1500
0.0
0.5
1.0
1.5
2.0
2.5
3.0
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Figure 25. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
Figure 26. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage
(VR=400V,ꢀDynamicꢀtestꢀcircuitꢀinꢀFigureꢀE)
4.0
IF=38A
IF=75A
IF=120A
IF=150A
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
75
100
125
150
175
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 27. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
Datasheet
12
Vꢀ2.3
2017-11-13
IKQ120N60T
TRENCHSTOPTMꢀseries
Package Drawing PG-TO247-3-46
MILLIMETERS
INCHES
DIM
MIN
4.90
2.31
1.90
1.16
1.96
1.96
MAX
5.10
2.51
2.10
1.26
2.25
2.06
MIN
MAX
0.201
0.099
0.083
0.050
0.089
0.081
A
0.193
0.091
0.075
0.046
0.077
0.077
DOCUMENT NO.
Z8B00174295
A1
A2
b
0
SCALE
b1
b2
5
0
5
c
D
0.59
0.66
21.10
16.85
1.35
0.023
0.823
0.640
0.041
0.023
0.618
0.516
0.053
0.026
0.831
0.663
0.053
0.031
0.626
0.531
0.061
7.5mm
20.90
16.25
1.05
D1
D2
D3
E
EUROPEAN PROJECTION
0.58
0.78
15.70
13.10
1.35
15.90
13.50
1.55
E1
E3
e
5.44 (BSC)
3
0.214 (BSC)
3
ISSUE DATE
13-08-2014
N
L
19.80
-
20.10
4.30
2.10
0.780
-
0.791
0.169
0.083
REVISION
L1
R
01
1.90
0.075
Datasheet
13
Vꢀ2.3
2017-11-13
IKQ120N60T
TRENCHSTOPTMꢀseries
Testing Conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
Datasheet
14
Vꢀ2.3
2017-11-13
IKQ120N60T
TRENCHSTOPTMꢀseries
RevisionꢀHistory
IKQ120N60T
Revision:ꢀ2017-11-13,ꢀRev.ꢀ2.3
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.1
2.2
2.3
2014-11-18 Final data sheet
2014-11-18 Update of Transconductance gfs
2017-11-13 Minor change Fig. 20 and Fig. 21
Datasheet
15
Vꢀ2.3
2017-11-13
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