IKW30N65H5 [INFINEON]
IGBT TRENCHSTOP™ 5;
| 型号： | IKW30N65H5 |
| 厂家： | 
Infineon |
| 描述： | IGBT TRENCHSTOP™ 5 双极性晶体管 |
| 文件： | 总17页 (文件大小：2196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT
Highꢀspeedꢀ5ꢀIGBTꢀinꢀTRENCHSTOPTMꢀ5ꢀtechnologyꢀcopackedꢀwithꢀRAPIDꢀ1
fastꢀandꢀsoftꢀantiparallelꢀdiode
IKW30N65H5
650VꢀDuoPackꢀIGBTꢀandꢀDiode
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
Dataꢀsheet
IndustrialꢀPowerꢀControl
IKW30N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
Highꢀspeedꢀ5ꢀIGBTꢀinꢀTRENCHSTOPTMꢀ5ꢀtechnologyꢀcopackedꢀwithꢀRAPIDꢀ1
fastꢀandꢀsoftꢀantiparallelꢀdiode
ꢀ
C
FeaturesꢀandꢀBenefits:
HighꢀspeedꢀH5ꢀtechnologyꢀoffering
•ꢀBest-in-Classꢀefficiencyꢀinꢀhardꢀswitchingꢀandꢀresonant
topologies
•ꢀPlugꢀandꢀplayꢀreplacementꢀofꢀpreviousꢀgenerationꢀIGBTs
•ꢀ650Vꢀbreakdownꢀvoltage
•ꢀLowꢀgateꢀchargeꢀQG
G
E
•ꢀIGBTꢀcopackedꢀwithꢀRAPIDꢀ1ꢀfastꢀandꢀsoftꢀantiparallelꢀdiode
•ꢀMaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀQualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
http://www.infineon.com/igbt/
Applications:
•ꢀSolarꢀconverters
•ꢀUninterruptibleꢀpowerꢀsupplies
•ꢀWeldingꢀconverters
•ꢀMidꢀtoꢀhighꢀrangeꢀswitchingꢀfrequencyꢀconverters
G
C
E
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
1.65V 175°C
Marking
Package
IKW30N65H5
650V
30A
K30EH5
PG-TO247-3
2
Rev.ꢀ2.1,ꢀꢀ2015-05-06
IKW30N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
3
Rev.ꢀ2.1,ꢀꢀ2015-05-06
IKW30N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
650
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°C
TCꢀ=ꢀ100°C
IC
55.0
35.0
A
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
90.0
90.0
A
A
TurnꢀoffꢀsafeꢀoperatingꢀareaꢀVCEꢀ≤ꢀ650V,ꢀTvjꢀ≤ꢀ175°C
-
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°C
TCꢀ=ꢀ100°C
IF
30.0
18.0
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
VGE
54.0
A
V
Gate-emitter voltage
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ≤ꢀ10µs,ꢀDꢀ<ꢀ0.010)
±20
±30
PowerꢀdissipationꢀTCꢀ=ꢀ25°C
PowerꢀdissipationꢀTCꢀ=ꢀ100°C
188.0
94.0
Ptot
W
Operating junction temperature
Storage temperature
Tvj
-40...+175
-55...+150
°C
°C
Tstg
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
ThermalꢀResistance
Parameter
Symbol Conditions
Max.ꢀValue
Unit
Characteristic
IGBT thermal resistance,
junction - case
Rth(j-c)
Rth(j-c)
Rth(j-a)
0.80
2.00
40
K/W
K/W
K/W
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
4
Rev.ꢀ2.1,ꢀꢀ2015-05-06
IKW30N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.20mA
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ30.0A
Tvjꢀ=ꢀ25°C
Collector-emitter saturation voltage VCEsat
Tvjꢀ=ꢀ125°C
650
-
-
V
V
-
-
-
1.65 2.10
1.85
1.95
-
-
Tvjꢀ=ꢀ175°C
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ14.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ125°C
Tvjꢀ=ꢀ175°C
-
-
-
1.55 1.90
Diode forward voltage
VF
V
V
1.55
1.50
-
-
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ0.30mA,ꢀVCEꢀ=ꢀVGE
3.2
4.0
4.8
VCEꢀ=ꢀ650V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ150°C
-
40.0
-
-
Zero gate voltage collector current ICES
-
-
µA
250.0
1000.0
Tvjꢀ=ꢀ175°C
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ30.0A
-
-
-
100
-
nA
S
39.5
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
1800
45
-
-
-
Output capacitance
Coes
Cres
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
7
VCCꢀ=ꢀ520V,ꢀICꢀ=ꢀ30.0A,
VGEꢀ=ꢀ15V
Gate charge
QG
LE
-
-
70.0
13.0
-
-
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
20
11
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ15.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ23.0Ω,ꢀRG(off)ꢀ=ꢀ23.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
190
19
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.28
0.10
0.38
mJ
mJ
mJ
Turn-off energy
Total switching energy
5
Rev.ꢀ2.1,ꢀꢀ2015-05-06
IKW30N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
19
5
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ5.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ23.0Ω,ꢀRG(off)ꢀ=ꢀ23.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
195
25
ns
ns
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Ets
0.09
0.04
0.13
mJ
mJ
mJ
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
70
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ15.0A,
diF/dtꢀ=ꢀ1180A/µs
Qrr
0.41
11.5
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-200
-
A/µs
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
44
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ5.0A,
Qrr
0.22
10.2
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ1180A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-370
-
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
19
12
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ150°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ15.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ23.0Ω,ꢀRG(off)ꢀ=ꢀ23.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
225
21
ns
ns
Turn-on energy
Eon
Eoff
Ets
0.41
0.16
0.57
mJ
mJ
mJ
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
18
5
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ150°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ5.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ23.0Ω,ꢀRG(off)ꢀ=ꢀ23.0Ω,
Lσꢀ=ꢀ30nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
250
35
ns
ns
Turn-on energy
Turn-off energy
Total switching energy
Eon
Eoff
Ets
0.15
0.07
0.22
mJ
mJ
mJ
6
Rev.ꢀ2.1,ꢀꢀ2015-05-06
IKW30N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ150°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
113
0.93
15.8
-
-
-
ns
µC
A
Tvjꢀ=ꢀ150°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ15.0A,
Qrr
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ1100A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-145
-
A/µs
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
70
-
-
-
ns
µC
A
Tvjꢀ=ꢀ150°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ5.0A,
Qrr
0.52
14.2
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ1030A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-255
-
A/µs
7
Rev.ꢀ2.1,ꢀꢀ2015-05-06
IKW30N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
100
10
1
200
180
160
140
120
100
80
not for linear use
60
40
20
0.1
0
1
10
100
1000
25
50
75
100
125
150
175
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1. Forwardꢀbiasꢀsafeꢀoperatingꢀarea
Figure 2. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
(D=0,ꢀTC=25°C,ꢀTvj≤175°C,ꢀVGE=15V,ꢀtp=1µs.
RecommendedꢀuseꢀatꢀVGE≥7.5V)
temperature
(Tvj≤175°C)
60
50
40
30
20
10
0
90
80
VGE=18V
15V
12V
10V
8V
70
60
50
40
30
20
10
0
7V
6V
5V
4V
25
50
75
100
125
150
175
0
1
2
3
4
5
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
Figure 4. Typicalꢀoutputꢀcharacteristic
(Tvj=25°C)
(VGE≥15V,ꢀTvj≤175°C)
8
Rev.ꢀ2.1,ꢀꢀ2015-05-06
IKW30N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
90
80
70
60
50
40
30
20
10
0
90
80
70
60
50
40
30
20
10
0
Tj=25°C
Tj=150°C
VGE=18V
15V
12V
10V
8V
7V
6V
5V
4V
0
1
2
3
4
5
4
5
6
7
8
9
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 5. Typicalꢀoutputꢀcharacteristic
(Tvj=150°C)
Figure 6. Typicalꢀtransferꢀcharacteristic
(VCE=20V)
2.50
IC=7.5A
IC=15A
IC=30A
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
td(off)
tf
td(on)
100
tr
10
1
0
25
50
75
100
125
150
175
0
10
20
30
40
50
60
70
80
90
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 7. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
aꢀfunctionꢀofꢀjunctionꢀtemperature
collectorꢀcurrent
(VGE=15V)
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=15/0V,ꢀrG=23Ω,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
9
Rev.ꢀ2.1,ꢀꢀ2015-05-06
IKW30N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
1000
100
10
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
100
10
1
1
5
15
25
35
45
55
65
25
50
75
100
125
150
175
rG,ꢀGATEꢀRESISTORꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate Figure 10. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
resistor
junctionꢀtemperature
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=15/0V,ꢀIC=15A,Dynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=15/0V,
IC=15A,ꢀrG=23Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
typ.
min.
max.
Eoff
Eon
Ets
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
80
90
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 11. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
ofꢀjunctionꢀtemperature
(IC=0.3mA)
functionꢀofꢀcollectorꢀcurrent
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=15/0V,ꢀrG=23Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
10
Rev.ꢀ2.1,ꢀꢀ2015-05-06
IKW30N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Eoff
Eon
Ets
Eoff
Eon
Ets
5
15
25
35
45
55
65
25
50
75
100
125
150
175
rG,ꢀGATEꢀRESISTORꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistor
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=15/0V,
IC=15A,ꢀrG=23Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀTvj=150°C,ꢀVCE=400V,
VGE=15/0V,ꢀIC=15A,ꢀDynamicꢀtestꢀcircuitꢀin
Figure E)
0.7
16
Eoff
Eon
130V
520V
Ets
14
12
10
8
0.6
0.5
0.4
0.3
0.2
0.1
0.0
6
4
2
0
200
250
300
350
400
450
500
0
10
20
30
40
50
60
70
80
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
QGE,ꢀGATEꢀCHARGEꢀ[nC]
Figure 15. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(inductiveꢀload,ꢀTvj=150°C,ꢀVGE=15/0V,
IC=15A,ꢀrG=23Ω,Dynamicꢀtestꢀcircuitꢀin
Figure E)
Figure 16. Typicalꢀgateꢀcharge
(IC=30A)
11
Rev.ꢀ2.1,ꢀꢀ2015-05-06
IKW30N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
1E+4
1000
100
10
1
Cies
Coes
Cres
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
i:
1
2
3
4
ri[K/W]: 0.1299033 0.1766063 0.2480626 0.2454278
τi[s]:
1.0E-4
1.1E-3
9.7E-3
0.09645982
1
0.001
1E-6
0
5
10
15
20
25
30
1E-5
1E-4
0.001
0.01
0.1
1
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 17. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
Figure 18. IGBTꢀtransientꢀthermalꢀimpedance
(D=tp/T)
(VGE=0V,ꢀf=1MHz)
140
Tj=25°C, IF = 15A
Tj=150°C, IF = 15A
130
1
120
110
100
90
D=0.5
0.2
0.1
0.05
0.1
0.02
0.01
single pulse
80
70
0.01
60
50
i:
1
2
3
4
ri[K/W]: 0.5085472 0.4834926 0.6496018 0.3583585
τi[s]:
9.7E-5
9.3E-4
5.9E-3
0.05885063
0.001
40
1E-7 1E-6 1E-5 1E-4 0.001 0.01
0.1
1
500
1000
1500
2000
2500
3000
3500
tp,ꢀPULSEꢀWIDTHꢀ[s]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 19. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
Figure 20. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀpulseꢀwidth
(D=tp/T)
(VR=400V)
12
Rev.ꢀ2.1,ꢀꢀ2015-05-06
IKW30N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
30.0
27.5
25.0
22.5
20.0
17.5
15.0
12.5
10.0
7.5
Tj=25°C, IF = 15A
Tj=150°C, IF = 15A
Tj=25°C, IF = 15A
Tj=150°C, IF = 15A
5.0
500
1000
1500
2000
2500
3000
3500
500
1000
1500
2000
2500
3000
3500
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
Figure 22. Typicalꢀpeakꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
0
40
Tj=25°C, IF = 15A
Tj=150°C, IF = 15A
Tj=25°C
Tj=150°C
36
-50
-100
-150
-200
-250
-300
-350
-400
32
28
24
20
16
12
8
4
0
500
1000
1500
2000
2500
3000
3500
0.00
0.50
1.00
1.50
2.00
2.50
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Figure 23. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
Figure 24. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage
(VR=400V)
13
Rev.ꢀ2.1,ꢀꢀ2015-05-06
IKW30N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
2.50
2.25
2.00
1.75
1.50
1.25
1.00
IF=7A
IF=14A
IF=28A
25
50
75
100
125
150
175
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 25. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
14
Rev.ꢀ2.1,ꢀꢀ2015-05-06
IKW30N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
Package Drawing PG-TO247-3
15
Rev.ꢀ2.1,ꢀꢀ2015-05-06
IKW30N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
Testing Conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
16
Rev.ꢀ2.1,ꢀꢀ2015-05-06
IKW30N65H5
Highꢀspeedꢀswitchingꢀseriesꢀfifthꢀgeneration
RevisionꢀHistory
IKW30N65H5
Revision:ꢀ2015-05-06,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2014-09-22 Preliminary data sheet
2014-10-15 AdditionalꢀICESꢀvalueꢀatꢀTvjꢀ=ꢀ150°C
2015-05-06 Final data sheet
1.1
1.2
2.1
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Publishedꢀby
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81726ꢀMunich,ꢀGermany
81726ꢀMünchen,ꢀGermany
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Withꢀrespectꢀtoꢀanyꢀexamplesꢀorꢀhintsꢀgivenꢀherein,ꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀthe
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and/orꢀautomotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineon
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automotive,ꢀaviationꢀandꢀaerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLife
supportꢀdevicesꢀorꢀsystemsꢀareꢀintendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustain
and/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀisꢀreasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbe
endangered.
17
Rev.ꢀ2.1,ꢀꢀ2015-05-06
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