IKW40N65WR5_15 [INFINEON]
Reverse conducting IGBT with monolithic body diode;
| 型号： | IKW40N65WR5_15 |
| 厂家： | 
Infineon |
| 描述： | Reverse conducting IGBT with monolithic body diode 双极性晶体管 |
| 文件： | 总15页 (文件大小：1921K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ReverseꢀConductionꢀSeries
ReverseꢀconductingꢀIGBTꢀwithꢀmonolithicꢀbodyꢀdiode
IKW40N65WR5
Dataꢀsheet
InductrialꢀPowerꢀControl
IKW40N65WR5
ReverseꢀConductionꢀSeries
ReverseꢀconductingꢀIGBTꢀwithꢀmonolithicꢀbodyꢀdiode
ꢀ
C
Features:
•ꢀPowerfulꢀmonolithicꢀdiodeꢀoptimizedꢀforꢀZCSꢀapplications
•ꢀTRENCHSTOPTMꢀ5ꢀtechnologyꢀapplicationsꢀoffers:
-ꢀhighꢀruggedness,ꢀtemperatureꢀstableꢀbehavior
-ꢀveryꢀlowꢀVCEsatꢀandꢀlowꢀEoff
-ꢀeasyꢀparallelꢀswitchingꢀcapabilityꢀdueꢀtoꢀpositive
temperatureꢀcoefficientꢀinꢀVCEsat
G
E
•ꢀLowꢀEMI
•ꢀLowꢀelectricalꢀparametersꢀdependingꢀ(dependence)ꢀon
temperature
•ꢀQualifiedꢀaccordingꢀtoꢀJESD-022ꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀCompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
http://www.infineon.com/igbt/
Applications:
•ꢀWelding
•ꢀPFC
•ꢀZCSꢀ-ꢀconverters
G
C
E
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
1.4V 175°C
Marking
Package
IKW40N65WR5
650V
40A
K40EWR5
PG-TO247-3
2
Rev.ꢀ1.2,ꢀꢀ2015-03-27
IKW40N65WR5
ReverseꢀConductionꢀSeries
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
3
Rev.ꢀ1.2,ꢀꢀ2015-03-27
IKW40N65WR5
ReverseꢀConductionꢀSeries
MaximumꢀRatings
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VCE
650
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire
TCꢀ=ꢀ100°C
IC
80.0
40.0
A
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
120.0
120.0
A
A
Turn off safe operating area
VCEꢀ≤ꢀ650V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs
-
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire
TCꢀ=ꢀ100°C
IF
32.0
19.0
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
VGE
120.0
±20
A
V
Gate-emitter voltage
PowerꢀdissipationꢀTCꢀ=ꢀ25°C
PowerꢀdissipationꢀTCꢀ=ꢀ100°C
230.0
115.0
Ptot
W
Operating junction temperature
Storage temperature
Tvj
-40...+175
-55...+150
°C
°C
Tstg
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
ThermalꢀResistance
Parameter
Symbol Conditions
Max.ꢀValue
Unit
Characteristic
IGBT thermal resistance,
junction - case
Rth(j-c)
Rth(j-c)
Rth(j-a)
0.65
2.85
40
K/W
K/W
K/W
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
4
Rev.ꢀ1.2,ꢀꢀ2015-03-27
IKW40N65WR5
ReverseꢀConductionꢀSeries
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Unit
min. typ. max.
Parameter
Symbol Conditions
StaticꢀCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ15V,ꢀICꢀ=ꢀ4.00mA
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ40.0A
650
-
-
V
V
Collector-emitter saturation voltage VCEsat
Tvjꢀ=ꢀ25°C
-
-
1.40 1.80
1.65
Tvjꢀ=ꢀ175°C
-
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ20.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Diode forward voltage
VF
-
-
1.40 1.90
V
V
1.50
-
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ0.40mA,ꢀVCEꢀ=ꢀVGE
3.2
4.0
4.8
VCEꢀ=ꢀ650V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Zero gate voltage collector current ICES
-
-
-
-
40.0 µA
-
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ15V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ40.0A
-
-
-
100
-
nA
S
55.0
none
Integrated gate resistor
rG
Ω
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
4755
45
-
-
-
Output capacitance
Coes
Cres
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
20
VCCꢀ=ꢀ520V,ꢀICꢀ=ꢀ40.0A,
VGEꢀ=ꢀ15V
Gate charge
QG
LE
-
-
193.0
13.0
-
-
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
40
29
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ20.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ20.0Ω,ꢀRG(off)ꢀ=ꢀ20.0Ω,
Lσꢀ=ꢀ70nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
402
11
ns
ns
Turn-on energy
Eon
Eoff
Ets
1.40
0.42
1.82
mJ
mJ
mJ
Turn-off energy
Total switching energy
5
Rev.ꢀ1.2,ꢀꢀ2015-03-27
IKW40N65WR5
ReverseꢀConductionꢀSeries
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
112
1.65
27.0
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ20.0A,
Qrr
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ900A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-585
-
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
48
31
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ175°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ20.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ20.0Ω,ꢀRG(off)ꢀ=ꢀ20.0Ω,
Lσꢀ=ꢀ70nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
488
12
ns
ns
Turn-on energy
Eon
Eoff
Ets
1.63
0.57
2.20
mJ
mJ
mJ
Turn-off energy
Total switching energy
DiodeꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
153
2.80
32.0
-
-
-
ns
µC
A
Tvjꢀ=ꢀ175°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ20.0A,
Qrr
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ900A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-1030
-
A/µs
6
Rev.ꢀ1.2,ꢀꢀ2015-03-27
IKW40N65WR5
ReverseꢀConductionꢀSeries
250
200
150
100
50
100
10
1
not for linear use
0.1
0
1
10
100
1000
25
50
75
100
125
150
175
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 1. Forwardꢀbiasꢀsafeꢀoperatingꢀarea
(D=0,ꢀTC=25°C,ꢀTvj≤175°C;ꢀVGE=15V)
Figure 2. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
temperature
(Tvj≤175°C)
100
120
VGE = 20V
ICꢀmax
max. current limited by bondwire
90
15V
100
13V
80
70
60
50
40
30
20
10
0
11V
9V
8V
7V
6V
80
60
40
20
0
25
50
75
100
125
150
175
0.0
0.5
1.0
1.5
2.0
2.5
3.0
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 3. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
Figure 4. Typicalꢀoutputꢀcharacteristic
(Tvj=25°C)
(VGE≥15V,ꢀTvj≤175°C)
7
Rev.ꢀ1.2,ꢀꢀ2015-03-27
IKW40N65WR5
ReverseꢀConductionꢀSeries
120
100
80
60
40
20
0
120
VGE = 20V
15V
13V
11V
9V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
100
80
60
40
20
0
8V
7V
6V
5V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
6
7
8
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 5. Typicalꢀoutputꢀcharacteristic
(Tvj=175°C)
Figure 6. Typicalꢀtransferꢀcharacteristic
(VCE=20V)
2.00
1000
IC = 10A
IC = 20A
IC = 40A
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
td(off)
tf
td(on)
tr
100
10
1
0
25
50
75
100
125
150
175
0
10
20
30
40
50
60
70
80
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 7. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas Figure 8. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
aꢀfunctionꢀofꢀjunctionꢀtemperature
collectorꢀcurrent
(VGE=15V)
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=400V,
VGE=0/15V,ꢀRG(on)=20Ω,ꢀRG(off)=20Ω,ꢀdynamic
test circuit in Figure E)
8
Rev.ꢀ1.2,ꢀꢀ2015-03-27
IKW40N65WR5
ReverseꢀConductionꢀSeries
1000
td(off)
tf
td(on)
tr
1000
100
10
100
10
td(off)
tf
td(on)
tr
1
1
0
10
20
30
40
50
60
70
80
90
25
50
75
100
125
150
175
RG,ꢀGATEꢀRESISTANCEꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate Figure 10. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
resistance
junctionꢀtemperature
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=400V,
VGE=0/15V,ꢀIC=40A,ꢀdynamicꢀtestꢀcircuitꢀin
Figure E)
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,
IC=40A,ꢀRG(on)=20Ω,ꢀRG(off)=20Ω,ꢀdynamic
test circuit in Figure E)
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
typ.
min.
max.
Eoff
Eon
Ets
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
80
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
Figure 11. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction Figure 12. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
ofꢀjunctionꢀtemperature
functionꢀofꢀcollectorꢀcurrent
(IC=0,4mA)
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=400V,
VGE=0/15V,ꢀRG(on)=20Ω,ꢀRG(off)=20Ω,
dynamic test circuit in Figure E)
9
Rev.ꢀ1.2,ꢀꢀ2015-03-27
IKW40N65WR5
ReverseꢀConductionꢀSeries
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.0
Eoff
Eon
Ets
Eoff
Eon
Ets
2.5
2.0
1.5
1.0
0.5
0.0
0
10
20
30
40
50
60
70
80
90
25
50
75
100
125
150
175
RG,ꢀGATEꢀRESISTANCEꢀ[Ω]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistance
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
(inductiveꢀload,ꢀVCE=400V,ꢀVGE=0/15V,
IC=40A,ꢀRG(on)=20Ω,ꢀRG(off)=20Ω,ꢀdynamic
test circuit in Figure E)
(inductiveꢀload,ꢀTvj=175°C,ꢀVCE=400V,
VGE=150/V,ꢀIC=40A,ꢀdynamicꢀtestꢀcircuitꢀin
Figure E)
16
1E+4
VCCꢀ=ꢀ130V
VCCꢀ=ꢀ520V
14
12
10
8
Cies
Coes
Cres
1000
6
100
4
2
0
10
0
20 40 60 80 100 120 140 160 180 200
0
10 20 30 40 50 60 70 80 90 100
QGE,ꢀGATEꢀCHARGEꢀ[nC]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 15. Typicalꢀgateꢀcharge
(IC=40A)
Figure 16. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
(VGE=0V,ꢀf=1MHz)
10
Rev.ꢀ1.2,ꢀꢀ2015-03-27
IKW40N65WR5
ReverseꢀConductionꢀSeries
1
1
D = 0.5
0.2
D = 0.5
0.2
0.1
0.1
0.1
0.1
0.05
0.02
0.01
0.05
0.02
0.01
single pulse
single pulse
0.01
0.01
i:
1
2
3
4
i:
1
2
3
4
5
6
ri[K/W]: 0.1900805 0.2281325 0.2083299 6.5E-3
ri[K/W]: 1.668204 0.7015919 0.370506 0.1086465 6.5E-3
1.5E-3
τi[s]:
2.4E-4
3.0E-3
0.01446956 0.2121156
τi[s]:
2.0E-4
1.0E-3
6.3E-3
0.02172364 0.235345 2.062145
0.001
1E-6
0.001
1E-5
1E-4
0.001
0.01
0.1
1E-7
1E-6
1E-5
1E-4
0.001
0.01
0.1
tp,ꢀPULSEꢀWIDTHꢀ[s]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 17. IGBTꢀtransientꢀthermalꢀimpedance
(D=tp/T)
Figure 18. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidth
(D=tp/T)
250
5.0
Tvjꢀ=ꢀ25°C,ꢀIFꢀ=ꢀ20A
Tvjꢀ=ꢀ25°C,ꢀIFꢀ=ꢀ20A
Tvjꢀ=ꢀ175°C,ꢀIFꢀ=ꢀ20A
Tvjꢀ=ꢀ175°C,ꢀIFꢀ=ꢀ20A
225
4.5
200
175
150
125
100
75
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
50
25
0
500
600
700
800
900
1000
1100
500
600
700
800
900
1000
1100
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 19. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction Figure 20. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
(VR=400V)
11
Rev.ꢀ1.2,ꢀꢀ2015-03-27
IKW40N65WR5
ReverseꢀConductionꢀSeries
60
50
40
30
20
10
0
0
Tvjꢀ=ꢀ25°C,ꢀIFꢀ=ꢀ20A
Tvjꢀ=ꢀ175°C,ꢀIFꢀ=ꢀ20A
Tvjꢀ=ꢀ25°C,ꢀIFꢀ=ꢀ20A
Tvjꢀ=ꢀ175°C,ꢀIFꢀ=ꢀ20A
-250
-500
-750
-1000
-1250
-1500
-1750
-2000
-2250
-2500
500
600
700
800
900
1000
1100
500
600
700
800
900
1000
1100
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 21. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
Figure 22. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
(VR=400V)
120
3.00
Tvjꢀ=ꢀ25°C
IFꢀ=ꢀ10A
Tvjꢀ=ꢀ175°C
IF = 20A
IFꢀ=ꢀ40A
110
100
90
80
70
60
50
40
30
20
10
0
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
25
50
75
100
125
150
175
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Tvj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 23. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction Figure 24. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature
12
Rev.ꢀ1.2,ꢀꢀ2015-03-27
IKW40N65WR5
ReverseꢀConductionꢀSeries
Package Drawing PG-TO247-3
13
Rev.ꢀ1.2,ꢀꢀ2015-03-27
IKW40N65WR5
ReverseꢀConductionꢀSeries
Testing Conditions
VGE(t)
I,V
90% VGE
trr = ta + tb
dIF/dt
Qrr = Qa + Qb
a
b
10% VGE
t
Qa
Qb
IC(t)
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
t
td(off)
tf
td(on)
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
VCE(t)
Figure E. Dynamic test circuit
Parasitic inductance L ,
parasitic capacitor C ,
s
s
relief capacitor C ,
(only for ZVT switching)
r
t2
t4
E
=
VCE x IC x dt
E
=
VCE x IC x dt
off
on
2% VCE
t1
t3
t
t1
t2
t3
t4
Figure B.
14
Rev.ꢀ1.2,ꢀꢀ2015-03-27
IKW40N65WR5
ReverseꢀConductionꢀSeries
RevisionꢀHistory
IKW40N65WR5
Revision:ꢀ2015-03-27,ꢀRev.ꢀ1.2
Previous Revision
Revision Date
Subjects (major changes since last revision)
1.1
1.2
2014-12-05 Preliminary data sheet
2015-03-27 New dynamic parameters and graphs
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and/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀisꢀreasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbe
endangered.
15
Rev.ꢀ1.2,ꢀꢀ2015-03-27
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