IKW50N60H3FKSA1 [INFINEON]
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247, GREEN, PLASTIC PACKAGE-3;
| 型号： | IKW50N60H3FKSA1 |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, TO-247, GREEN, PLASTIC PACKAGE-3 局域网 栅 功率控制 晶体管 |
| 文件： | 总16页 (文件大小：2114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT
HighꢀspeedꢀDuoPack:ꢀIGBTꢀinꢀTrenchꢀandꢀFieldstopꢀtechnology
withꢀsoft,ꢀfastꢀrecoveryꢀanti-parallelꢀdiode
IKW50N60H3
600Vꢀhighꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
Dataꢀsheet
IndustrialꢀPowerꢀControl
IKW50N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
HighꢀspeedꢀIGBTꢀinꢀTrenchꢀandꢀFieldstopꢀtechnology
ꢀ
C
E
Features:
TRENCHSTOPTMꢀtechnologyꢀoffering
•ꢀveryꢀlowꢀVCEsat
•ꢀlowꢀEMI
•ꢀVeryꢀsoft,ꢀfastꢀrecoveryꢀanti-parallelꢀdiode
•ꢀmaximumꢀjunctionꢀtemperatureꢀ175°C
•ꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀcompleteꢀproductꢀspectrumꢀandꢀPSpiceꢀModels:
http://www.infineon.com/igbt/
G
Applications:
•ꢀuninterruptibleꢀpowerꢀsupplies
•ꢀweldingꢀconverters
•ꢀconvertersꢀwithꢀhighꢀswitchingꢀfrequency
G
C
E
KeyꢀPerformanceꢀandꢀPackageꢀParameters
Type
VCE
IC
VCEsat,ꢀTvj=25°C Tvjmax
1.85V 175°C
Marking
Package
IKW50N60H3
600V
50A
K50H603
PG-TO247-3
2
Rev.ꢀ2.2,ꢀꢀ2014-03-12
IKW50N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
3
Rev.ꢀ2.2,ꢀꢀ2014-03-12
IKW50N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
Maximumꢀratings
Parameter
Symbol
Value
Unit
Collector-emitterꢀvoltage,ꢀTvjꢀ≥ꢀ25°C
VCE
600
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°C
TCꢀ=ꢀ100°C
IC
100.0
50.0
A
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
ICpuls
200.0
200.0
A
A
Turn off safe operating area
VCEꢀ≤ꢀ600V,ꢀTvjꢀ≤ꢀ175°C,ꢀtpꢀ=ꢀ1µs
-
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax
TCꢀ=ꢀ25°C
TCꢀ=ꢀ100°C
IF
60.0
30.0
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax
IFpuls
VGE
200.0
±20
A
V
Gate-emitter voltage
Short circuit withstand time
VGEꢀ=ꢀ15.0V,ꢀVCCꢀ≤ꢀ400V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvjꢀ=ꢀ150°C
tSC
µs
5
PowerꢀdissipationꢀTCꢀ=ꢀ25°C
PowerꢀdissipationꢀTCꢀ=ꢀ100°C
333.0
167.0
Ptot
W
Operating junction temperature
Storage temperature
Tvj
-40...+175
-55...+150
°C
°C
Tstg
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
°C
260
0.6
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
Nm
ThermalꢀResistance
Parameter
Symbol Conditions
Max.ꢀValue
Unit
Characteristic
IGBT thermal resistance,
junction - case
Rth(j-c)
Rth(j-c)
Rth(j-a)
0.45
1.05
40
K/W
K/W
K/W
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
4
Rev.ꢀ2.2,ꢀꢀ2014-03-12
IKW50N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
StaticꢀCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ2.00mA
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ50.0A
Tvjꢀ=ꢀ25°C
Collector-emitter saturation voltage VCEsat
Tvjꢀ=ꢀ125°C
600
-
-
V
V
-
-
-
1.85 2.30
2.10
2.25
-
-
Tvjꢀ=ꢀ175°C
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ30.0A
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ125°C
Tvjꢀ=ꢀ175°C
-
-
-
1.65 2.05
Diode forward voltage
VF
V
V
1.67
1.65
-
-
Gate-emitter threshold voltage
VGE(th)
ICꢀ=ꢀ0.80mA,ꢀVCEꢀ=ꢀVGE
4.1
5.1
5.7
VCEꢀ=ꢀ600V,ꢀVGEꢀ=ꢀ0V
Tvjꢀ=ꢀ25°C
Tvjꢀ=ꢀ175°C
Zero gate voltage collector current ICES
-
-
-
-
40.0 µA
3500.0
Gate-emitter leakage current
Transconductance
IGES
gfs
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ50.0A
-
-
-
100
-
nA
S
30.0
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
DynamicꢀCharacteristic
Input capacitance
Cies
-
-
-
2960
116
96
-
-
-
Output capacitance
Coes
Cres
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz
pF
Reverse transfer capacitance
VCCꢀ=ꢀ480V,ꢀICꢀ=ꢀ50.0A,
VGEꢀ=ꢀ15V
Gate charge
QG
LE
-
-
315.0
13.0
-
-
nC
nH
Internal emitter inductance
measured 5mm (0.197 in.) from
case
Short circuit collector current
Max. 1000 short circuits
VGEꢀ=ꢀ15.0V,ꢀVCCꢀ≤ꢀ400V,
tSCꢀ≤ꢀ5µs
IC(SC)
-
-
A
Time between short circuits: ≥ 1.0s
Tvjꢀ=ꢀ150°C
330
5
Rev.ꢀ2.2,ꢀꢀ2014-03-12
IKW50N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
23
37
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ25°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ50.0A,
VGEꢀ=ꢀ0.0/15.0V,
rGꢀ=ꢀ7.0Ω,ꢀLσꢀ=ꢀ90nH,
Cσꢀ=ꢀ60pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
235
24
ns
ns
Turn-on energy
Eon
Eoff
Ets
1.45
0.91
2.36
mJ
mJ
mJ
Turn-off energy
Total switching energy
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
130
0.88
16.9
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ30.0A,
diF/dtꢀ=ꢀ1000A/µs
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-598
-
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
23
31
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ175°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ50.0A,
VGEꢀ=ꢀ0.0/15.0V,
rGꢀ=ꢀ7.0Ω,ꢀLσꢀ=ꢀ90nH,
Cσꢀ=ꢀ60pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
273
24
ns
ns
Turn-on energy
Eon
Eoff
Ets
1.42
1.13
2.55
mJ
mJ
mJ
Turn-off energy
Total switching energy
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
217
2.40
22.9
-
-
-
ns
µC
A
Tvjꢀ=ꢀ175°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ30.0A,
Qrr
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ1000A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-307
-
A/µs
6
Rev.ꢀ2.2,ꢀꢀ2014-03-12
IKW50N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
140
120
100
80
100
10
1
tp=1µs
10µs
50µs
100µs
200µs
500µs
DC
60
40
TC=80°
TC=110°
TC=80°
20
TC=110°
0
0.1
1
10
100
1000
1
10
100
1000
f,ꢀSWITCHINGꢀFREQUENCYꢀ[kHz]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 1. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀswitching
Figure 2. Forwardꢀbiasꢀsafeꢀoperatingꢀarea
(D=0,ꢀTC=25°C,ꢀTj≤175°C;ꢀVGE=15V)
frequency
(Tj≤175°C,ꢀD=0.5,ꢀVCE=400V,ꢀVGE=15/0V,
rG=7Ω)
350
300
250
200
150
100
50
100
90
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
TC,ꢀCASEꢀTEMPERATUREꢀ[°C]
Figure 3. Powerꢀdissipationꢀasꢀaꢀfunctionꢀofꢀcase
Figure 4. Collectorꢀcurrentꢀasꢀaꢀfunctionꢀofꢀcase
temperature
temperature
(Tj≤175°C)
(VGE≥15V,ꢀTj≤175°C)
7
Rev.ꢀ2.2,ꢀꢀ2014-03-12
IKW50N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
200
175
150
125
100
75
200
175
150
125
100
75
VGE=20V
17V
15V
13V
11V
9V
VGE=20V
17V
15V
13V
11V
9V
7V
7V
5V
5V
50
50
25
25
0
0
0
1
2
3
4
5
6
0
1
2
3
4
5
6
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 5. Typicalꢀoutputꢀcharacteristic
(Tj=25°C)
Figure 6. Typicalꢀoutputꢀcharacteristic
(Tj=175°C)
200
3.5
Tj=25°C
Tj=175°C
IC=25A
IC=50A
IC=100A
3.0
2.5
2.0
1.5
1.0
150
100
50
0
5
6
7
8
9
10
11
12
0
25
50
75
100
125
150
175
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 7. Typicalꢀtransferꢀcharacteristic
(VCE=20V)
Figure 8. Typicalꢀcollector-emitterꢀsaturationꢀvoltageꢀas
aꢀfunctionꢀofꢀjunctionꢀtemperature
(VGE=15V)
8
Rev.ꢀ2.2,ꢀꢀ2014-03-12
IKW50N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
td(off)
tf
td(on)
tr
td(off)
tf
td(on)
tr
100
100
10
10
10
20
30
40
50
60
70
80
90 100
0
5
10
15
20
25
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
rG,ꢀGATEꢀRESISTORꢀ[Ω]
Figure 9. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
collectorꢀcurrent
Figure 10. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀofꢀgate
resistor
(ind.ꢀload,ꢀTj=175°C,ꢀVCE=400V,ꢀVGE=15/0V,
rG=7Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
(ind.ꢀload,ꢀTj=175°C,ꢀVCE=400V,ꢀVGE=15/0V,
IC=50A,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
6.0
typ.
min.
max.
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
td(off)
tf
td(on)
tr
100
10
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 11. Typicalꢀswitchingꢀtimesꢀasꢀaꢀfunctionꢀof
junctionꢀtemperature
Figure 12. Gate-emitterꢀthresholdꢀvoltageꢀasꢀaꢀfunction
ofꢀjunctionꢀtemperature
(ind.ꢀload,ꢀVCE=400V,ꢀVGE=15/0V,ꢀIC=50A,
rG=7Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
(IC=0,8mA)
9
Rev.ꢀ2.2,ꢀꢀ2014-03-12
IKW50N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
8
7
6
5
4
3
2
1
0
5
4
3
2
1
0
Eoff
Eon
Ets
Eoff
Eon
Ets
10
20
30
40
50
60
70
80
90 100
2
6
10
14
18
22
IC,ꢀCOLLECTORꢀCURRENTꢀ[A]
rG,ꢀGATEꢀRESISTORꢀ[Ω]
Figure 13. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀcurrent
Figure 14. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀgateꢀresistor
(ind.ꢀload,ꢀTj=175°C,ꢀVCE=400V,ꢀVGE=15/0V,
rG=7Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
(ind.ꢀload,ꢀTj=175°C,ꢀVCE=400V,ꢀVGE=15/0V,
IC=50A,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
3.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Eoff
Eon
Ets
Eoff
Eon
Ets
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
175
200
250
300
350
400
450
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 15. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀjunctionꢀtemperature
Figure 16. Typicalꢀswitchingꢀenergyꢀlossesꢀasꢀa
functionꢀofꢀcollectorꢀemitterꢀvoltage
(ind.ꢀload,ꢀTj=175°C,ꢀVGE=15/0V,ꢀIC=50A,
rG=7Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
(indꢀload,ꢀVCE=400V,ꢀVGE=15/0V,ꢀIC=50A,
rG=7Ω,ꢀtestꢀcircuitꢀinꢀFig.ꢀE)
10
Rev.ꢀ2.2,ꢀꢀ2014-03-12
IKW50N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
16
14
12
10
8
120V
480V
1000
100
10
Cies
Coes
Cres
6
4
2
0
0
50
100
150
200
250
300
350
0
10
20
30
QGE,ꢀGATEꢀCHARGEꢀ[nC]
VCE,ꢀCOLLECTOR-EMITTERꢀVOLTAGEꢀ[V]
Figure 17. Typicalꢀgateꢀcharge
(IC=50A)
Figure 18. Typicalꢀcapacitanceꢀasꢀaꢀfunctionꢀof
collector-emitterꢀvoltage
(VGE=0V,ꢀf=1MHz)
750
650
550
450
350
250
150
15
12
9
6
3
0
10
12
14
16
18
20
10
11
12
13
14
15
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
VGE,ꢀGATE-EMITTERꢀVOLTAGEꢀ[V]
Figure 19. Typicalꢀshortꢀcircuitꢀcollectorꢀcurrentꢀasꢀa
functionꢀofꢀgate-emitterꢀvoltage
Figure 20. Shortꢀcircuitꢀwithstandꢀtimeꢀasꢀaꢀfunctionꢀof
gate-emitterꢀvoltage
(VCE≤400V,ꢀstartꢀatTj=25°C)
(VCE≤400V,ꢀstartꢀatꢀTj≤150°C)
11
Rev.ꢀ2.2,ꢀꢀ2014-03-12
IKW50N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
1
D=0.5
0.2
D=0.5
0.2
0.1
0.1
0.1
0.05
0.05
0.1
0.02
0.02
0.01
0.01
single pulse
single pulse
0.01
0.01
i:
1
2
3
4
5
i:
1
2
3
4
5
ri[K/W]: 7.0E-3 0.03736378 0.09205027 0.1299574 0.1835461
ri[K/W]: 0.04915956 0.2254532 0.3125229 0.2677344 0.1951733
τi[s]: 7.5E-6 2.2E-4 2.3E-3 0.01546046 0.1078904
τi[s]:
4.4E-5 1.0E-4
7.2E-4
8.3E-3
0.07425315
0.001
0.001
1E-6
1E-5
1E-4
0.001
0.01
0.1
1
1E-7 1E-6 1E-5 1E-4 0.001 0.01
0.1
1
tp,ꢀPULSEꢀWIDTHꢀ[s]
tp,ꢀPULSEꢀWIDTHꢀ[s]
Figure 21. IGBTꢀtransientꢀthermalꢀimpedance
(D=tp/T)
Figure 22. Diodeꢀtransientꢀthermalꢀimpedanceꢀasꢀa
functionꢀofꢀpulseꢀwidth
(D=tp/T)
300
3.0
Tj=25°C, IF = 50A
Tj=175°C, IF = 50A
Tj=25°C, IF = 50A
Tj=175°C, IF = 50A
250
200
150
100
50
2.5
2.0
1.5
1.0
0.5
0.0
0
800
900
1000
1100
1200
800
900
1000
1100
1200
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 23. Typicalꢀreverseꢀrecoveryꢀtimeꢀasꢀaꢀfunction Figure 24. Typicalꢀreverseꢀrecoveryꢀchargeꢀasꢀa
ofꢀdiodeꢀcurrentꢀslope
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
(VR=400V)
12
Rev.ꢀ2.2,ꢀꢀ2014-03-12
IKW50N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
30
26
22
18
14
10
0
-100
-200
-300
-400
-500
-600
-700
Tj=25°C, IF = 50A
Tj=175°C, IF = 50A
Tj=25°C, IF = 50A
Tj=175°C, IF = 50A
800
900
1000
1100
1200
800
900
1000
1100
1200
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
diF/dt,ꢀDIODEꢀCURRENTꢀSLOPEꢀ[A/µs]
Figure 25. Typicalꢀreverseꢀrecoveryꢀcurrentꢀasꢀa
functionꢀofꢀdiodeꢀcurrentꢀslope
(VR=400V)
Figure 26. Typicalꢀdiodeꢀpeakꢀrateꢀofꢀfallꢀofꢀreverse
recoveryꢀcurrentꢀasꢀaꢀfunctionꢀofꢀdiode
currentꢀslope
(VR=400V)
100
2.6
Tj=25°C
Tj=175°C
IF=15A
IF=30A
90
IF=60A
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
80
70
60
50
40
30
20
10
0
0.0
0.5
1.0
1.5
2.0
2.5
0
25
50
75
100
125
150
175
VF,ꢀFORWARDꢀVOLTAGEꢀ[V]
Tj,ꢀJUNCTIONꢀTEMPERATUREꢀ[°C]
Figure 27. Typicalꢀdiodeꢀforwardꢀcurrentꢀasꢀaꢀfunction Figure 28. Typicalꢀdiodeꢀforwardꢀvoltageꢀasꢀaꢀfunction
ofꢀforwardꢀvoltage ofꢀjunctionꢀtemperature
13
Rev.ꢀ2.2,ꢀꢀ2014-03-12
IKW50N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
PG-TO247-3
14
Rev.ꢀ2.2,ꢀꢀ2014-03-12
IKW50N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
vGE(t)
90% VGE
a
b
a
b
t
iC(t)
90% IC
10% IC
90% IC
10% IC
t
vCE(t)
t
t
td(off)
tf
td(on)
tr
vGE(t)
90% VGE
10% VGE
t
iC(t)
2% IC
t
vCE(t)
2% VCE
t
t1
t2
t3
t4
15
Rev.ꢀ2.2,ꢀꢀ2014-03-12
IKW50N60H3
Highꢀspeedꢀswitchingꢀseriesꢀthirdꢀgeneration
RevisionꢀHistory
IKW50N60H3
Revision:ꢀ2014-03-12,ꢀRev.ꢀ2.2
Previous Revision
Revision Date
Subjects (major changes since last revision)
2010-07-26 Preliminary datasheet
2013-12-10 New value ICES max limit at 175°C
2014-03-12 Max ratings Vce, Tvj ≥ 25°C
1.1
2.1
2.2
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and/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀisꢀreasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbe
endangered.
16
Rev.ꢀ2.2,ꢀꢀ2014-03-12
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