IKW40T120XK_技术文档

IKW40T120

^

TrenchStop Series

Low Loss DuoPack : IGBT in Trench and Fieldstop technology

with soft, fast recovery anti-parallel EmCon HE diode

C

•

Best in class TO247

Short circuit withstand time – 10µs

Designed for :

G

E

- Frequency Converters

- Uninterrupted Power Supply

•

Trench and Fieldstop technology for 1200 V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

NPT technology offers easy parallel switching capability due to

positive temperature coefficient in V_CE(sat)

Low EMI

P-TO-247-3-1

(TO-247AC)

•

Low Gate Charge

Very soft, fast recovery anti-parallel EmCon HE diode

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

V_CE

I_C

V_{CE(sat),Tj=25°C}

T_j,max

Package

TO-247AC

Ordering Code

IKW40T120

1200V

40A

1.8V

Q67040-S4520

150°C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

DC collector current

T_C= 25°C

V_CE

I_C

1200

V

A

75

40

T_C= 100°C

Pulsed collector current, t_plimited by T_jmax

Turn off safe operating area

I_{Cpul s}

-

105

V_CE≤ 1200V, T_j≤ 150°C

Diode forward current

T_C= 25°C

I_F

80

40

T_C= 100°C

Diode pulsed current, t_plimited by T_jmax

Gate-emitter voltage

Short circuit withstand time¹⁾

V_GE= 15V, V_CC≤ 1200V, T_j≤ 150°C

Power dissipation

I_{Fpul s}

V_{G E}

t_SC

105

±20

10

V

µs

P_{t ot}

270

W

T_C= 25°C

Operating junction temperature

Storage temperature

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

T_j

-40...+150

-55...+150

260

°C

T_stg

-

¹⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

1

Preliminary / Rev. 1 Jul-02

Power Semiconductors

IKW40T120

^

TrenchStop Series

Thermal Resistance

Parameter

Symbol

Conditions

Max. Value

Unit

Characteristic

IGBT thermal resistance,

junction – case

Diode thermal resistance,

junction – case

Thermal resistance,

junction – ambient

R_{t hJC}

R_{t hJCD}

R_{t hJA}

0.45

0.81

40

K/W

TO-247AC

Electrical Characteristic, at T_j= 25 °C, unless otherwise specified

Value

typ.

Parameter

Symbol

Conditions

Unit

min.

max.

Static Characteristic

Collector-emitter breakdown voltage V_{( BR)CES}V_{G E}=0V, I_C=1.5mA

1200

-

V

Collector-emitter saturation voltage

V_{C E( sat )}V_{G E}= 15V, I_C=40A

T_j=25°C

-

1.8

2.1

2.3

-

T_j=125°C

T_j=150°C

Diode forward voltage

V_F

V_{G E}=0V, I_F=40A

T_j=25°C

-

1.75

2.3

-

T_j=125°C

T_j=150°C

Gate-emitter threshold voltage

Zero gate voltage collector current

V_{G E(t h)}

I_CES

I_C=1.5mA,V_CE=V_{G E}

5.0

5.8

6.5

V_CE=1200V,

mA

V_{G E}=0V

T_j=25°C

T_j=150°C

-

21

6

0.4

4.0

600

-

Gate-emitter leakage current

Transconductance

I_GES

g_fs

V_CE=0V,V_{G E}=20V

V_CE=20V, I_C=40A

nA

S

Integrated gate resistor

R_{G int}

Ω

2

Preliminary / Rev. 1 Jul-02

Power Semiconductors

IKW40T120

^

TrenchStop Series

Dynamic Characteristic

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate charge

C_iss

V_CE=25V,

V_{G E}=0V,

f=1MHz

V_CC=960V, I_C=40A

V_{G E}=15V

-

2500

130

110

203

-

pF

C_oss

C_rss

Q_Gate

nC

nH

A

Internal emitter inductance

L_E

TO-247AC

-

13

-

measured 5mm (0.197 in.) from case

Short circuit collector current¹⁾

I_{C( SC)}

210

V_{G E}=15V,t_SC≤10µs

V_CC= 600V,

T_j= 25°C

Switching Characteristic, Inductive Load, at T_j=25 °C

Value

typ.

Parameter

Symbol

Conditions

Unit

min.

max.

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

Anti-Parallel Diode Characteristic

Diode reverse recovery time

Diode reverse recovery charge

t_d(on)

t_r

t_{d( off)}

t_f

-

48

34

480

70

3.3

3.2

6.5

-

ns

T_j=25°C,

V_CC=600V,I_C=40A,

V_{G E}=0/15V,

R_G=15Ω,

L_σ²⁾=180nH,

C_σ²⁾=39pF

E_on

E_off

E_{t s}

mJ

Energy losses include

“tail” and diode

reverse recovery.

t_rr

-

240

3.8

28

-

ns

µC

A

T_j=25°C,

V_R=600V, I_F=40A,

di_F/dt=800A/µs

Q_rr

Diode peak reverse recovery current I_rrm

Diode peak rate of fall of reverse

di_rr/dt

370

A/µs

recovery current during t_b

¹⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

²⁾Leakage inductance L_σand Stray capacity C_σdue to dynamic test circuit in Figure E.

3

Preliminary / Rev. 1 Jul-02

Power Semiconductors

IKW40T120

^

TrenchStop Series

Switching Characteristic, Inductive Load, at T_j=150 °C

Value

Unit

Parameter

Symbol

Conditions

min.

typ.

max.

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

Anti-Parallel Diode Characteristic

Diode reverse recovery time

Diode reverse recovery charge

t_d(on)

t_r

t_{d( off)}

t_f

-

52

40

-

ns

T_j=150°C

V_CC=600V,I_C=40A,

V_{G E}=0/15V,

580

120

5.0

5.4

10.4

R_G= 15Ω,

L_σ¹⁾=180nH,

C_σ¹⁾=39pF

E_on

E_off

E_{t s}

mJ

Energy losses include

“tail” and diode

reverse recovery.

t_rr

-

410

8.8

36

-

ns

µC

A

T_j=150°C

V_R=600V, I_F=40A,

di_F/dt=800A/µs

Q_rr

Diode peak reverse recovery current I_rrm

di_rr/dt

330

Diode peak rate of fall of reverse

A/µs

recovery current during t_b

¹⁾Leakage inductance L_σand Stray capacity C_σdue to dynamic test circuit in Figure E.

Preliminary / Rev. 1 Jul-02

4

Power Semiconductors

IKW40T120

^

TrenchStop Series

100A

t_p=3µs

100A

80A

60A

40A

20A

0A

T_C=80°C

10µs

T_C=110°C

10A

1A

50µs

150µs

500µs

I_c

20ms

DC

I_c

0,1A

10Hz

100Hz

1kHz

10kHz

100kHz

1V

10V

100V

1000V

f, SWITCHING FREQUENCY

Figure 1. Collector current as a function of

switching frequency

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 2. Safe operating area

(D = 0, T_C= 25°C,

(T_j≤ 150°C, D = 0.5, V_CE= 600V,

T_j≤150°C;V_GE=15V)

V_GE= 0/+15V, R_G= 15Ω)

70A

60A

50A

40A

30A

20A

10A

0A

250W

200W

150W

100W

50W

0W

25°C

75°C

125°C

25°C

50°C

75°C

100°C

125°C

T_C, CASE TEMPERATURE

Figure 3. Power dissipation as a function of

case temperature

T_C, CASE TEMPERATURE

Figure 4. Collector current as a function of

case temperature

(T_j≤ 150°C)

(V_GE≥ 15V, T_j≤ 150°C)

5

Preliminary / Rev. 1 Jul-02

Power Semiconductors

IKW40T120

^

TrenchStop Series

100A

90A

80A

70A

60A

50A

40A

30A

20A

10A

0A

100A

90A

V_GE=17V

80A

70A

60A

50A

40A

30A

20A

10A

0A

15V

13V

11V

9V

13V

11V

9V

7V

0V

1V

2V

3V

4V

5V

6V

0V

1V

2V

3V

4V

5V

6V

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 6. Typical output characteristic

(T_j= 25°C)

(T_j= 150°C)

100A

90A

80A

70A

60A

50A

40A

30A

3,5V

3,0V

2,5V

2,0V

1,5V

1,0V

0,5V

0,0V

I_C=80A

I_C=40A

I_C=25A

I_C=10A

20A

T_J=150°C

25°C

10A

0A

-50°C

0°C

50°C

100°C

0V

2V

4V

6V

8V

10V 12V

V_GE, GATE-EMITTER VOLTAGE

Figure 7. Typical transfer characteristic

T_J, JUNCTION TEMPERATURE

Figure 8. Typical collector-emitter

(V_CE=20V)

saturation voltage as a function of

junction temperature

(V_GE= 15V)

6

Preliminary / Rev. 1 Jul-02

Power Semiconductors

IKW40T120

^

TrenchStop Series

t_d(off)

1000 ns

t_d(off)

100ns

10ns

1ns

t_f

100 ns

10 ns

1 ns

t_d(on)

t_r

t_d(on)

t_r

0A

20A

40A

60A

5Ω

15Ω

25Ω

35Ω

45Ω

I_C, COLLECTOR CURRENT

R_G, GATE RESISTOR

Figure 10. Typical switching times as a

function of gate resistor

Figure 9. Typical switching times as a

function of collector current

(inductive load, T_J=150°C,

V_CE=600V, V_GE=0/15V, R_G=15ꢀ,

Dynamic test circuit in Figure E)

V_CE=600V, V_GE=0/15V, I_C=40A,

Dynamic test circuit in Figure E)

t_d(off)

7V

6V

5V

4V

3V

2V

1V

0V

max.

typ.

100ns

t_f

min.

t_d(on)

t_r

10ns

-50°C

0°C

50°C

100°C

150°C

0°C

50°C

100°C

150°C

T_J, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

Figure 12. Gate-emitter threshold voltage as

a function of junction temperature

(I_C= 1.5mA)

function of junction temperature

(inductive load, V_CE=600V,

V_GE=0/15V, I_C=40A, R_G=15ꢀ,

Dynamic test circuit in Figure E)

7

Preliminary / Rev. 1 Jul-02

Power Semiconductors

IKW40T120

^

TrenchStop Series

*) E_onand E_tsinclude losses

due to diode recovery

*) E_onand E_tsinclude losses

due to diode recovery

E_ts*

15 mJ

25,0mJ

20,0mJ

15,0mJ

10,0mJ

5,0mJ

E_ts*

10 mJ

E_on*

E_off

E_on*

E_off

5 mJ

0,0mJ

0 mJ

10A 20A 30A 40A 50A 60A 70A

5Ω

15Ω

25Ω

35Ω

I_C, COLLECTOR CURRENT

R_G, GATE RESISTOR

Figure 13. Typical switching energy losses

as a function of collector current

(inductive load, T_J=150°C,

Figure 14. Typical switching energy losses

as a function of gate resistor

(inductive load, T_J=150°C,

V_CE=600V, V_GE=0/15V, R_G=15ꢀ,

Dynamic test circuit in Figure E)

V_CE=600V, V_GE=0/15V, I_C=40A,

Dynamic test circuit in Figure E)

*) E_onand E_tsinclude losses

due to diode recovery

*) E_onand E_tsinclude losses

due to diode recovery

15mJ

E_ts*

10mJ

5mJ

0mJ

10mJ

E_ts*

E_off

5mJ

E_off

E_on*

0mJ

50°C

100°C

150°C

400V

500V

600V

700V

800V

T_J, JUNCTION TEMPERATURE

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 16. Typical switching energy losses

as a function of collector emitter

voltage

Figure 15. Typical switching energy losses

as a function of junction

temperature

(inductive load, V_CE=600V,

V_GE=0/15V, I_C=40A, R_G=15ꢀ,

Dynamic test circuit in Figure E)

(inductive load, T_J=150°C,

V_GE=0/15V, I_C=40A, R_G=15ꢀ,

Dynamic test circuit in Figure E)

8

Preliminary / Rev. 1 Jul-02

Power Semiconductors

IKW40T120

^

TrenchStop Series

C_iss

15V

10V

5V

1nF

100pF

10pF

240V

960V

C_oss

C_rss

0V

10V

20V

0nC

50nC

100nC 150nC 200nC 250nC

Q_GE, GATE CHARGE

Figure 17. Typical gate charge

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 18. Typical capacitance as a function

(I_C=40 A)

of collector-emitter voltage

(V_GE=0V, f = 1 MHz)

15µs

10µs

5µs

300A

200A

100A

0A

0µs

12V

14V

16V

12V

14V

16V

18V

V_GE, GATE-EMITTETR VOLTAGE

Figure 20. Typical short circuit collector

current as a function of gate-

emitter voltage

Figure 19. Short circuit withstand time as a

function of gate-emitter voltage

(V_CE=600V, start at T_J=25°C)

(V_CE≤ 600V, T_j≤ 150°C)

9

Preliminary / Rev. 1 Jul-02

Power Semiconductors

IKW40T120

^

TrenchStop Series

V_CE

600V

400V

200V

0V

600V

400V

200V

0V

60A

40A

20A

0A

60A

40A

20A

0A

I_C

V_CE

I_C

0us

0.5us

1us

1.5us

0.5us

1us

1.5us

t, TIME

Figure 21. Typical turn on behavior

(V_GE=0/15V, R_G=15ꢀ, T_j= 150°C,

Dynamic test circuit in Figure E)

Figure 22. Typical turn off behavior

(V_GE=15/0V, R_G=15ꢀ, T_j= 150°C,

Dynamic test circuit in Figure E)

D=0.5

0.2

0.1

0.2

10^-1K/W

10^-2K/W

10^-3K/W

R , ( K / W )

0.228

τ , ( s ) =

1.01*10^-1

1.15*10^-2

1.30*10^-3

1.53*10^-4

0.1

0.05

0.257

R , ( K / W )

0.159

τ , ( s ) =

1.10*10^-1

1.56*10^-2

1.35*10^-3

1.51*10^-4

0.02

0.01

single pulse

0.238

0.05

0.087

0.133

0.02

0.01

0.120

R₁

R₂

0.038

10^-2K/W

10^-3K/W

single pulse

R₁

R₂

C₁=τ₁/R₁C₂=τ₂/R₂

10µs

100µs

1ms

10ms

100ms

10µs

100µs

1ms

10ms

100ms

t_P, PULSE WIDTH

Figure 23. IGBT transient thermal resistance

t_P, PULSE WIDTH

Figure 24. Diode transient thermal

(D = t_p/ T)

impedance as a function of pulse

width

(D=t_P/T)

10

Preliminary / Rev. 1 Jul-02

Power Semiconductors

IKW40T120

^

TrenchStop Series

8µC

6µC

4µC

T_J=150°C

600ns

500ns

400ns

300ns

200ns

100ns

0ns

T_J=150°C

T_J=25°C

2µC

0µC

T_J=25°C

400A/µs

600A/µs

800A/µs 1000A/µs

400A/µs

600A/µs

800A/µs

1000A/µs

di_F/dt, DIODE CURRENT SLOPE

Figure 24. Typical reverse recovery charge

as a function of diode current

slope

Figure 23. Typical reverse recovery time as

a function of diode current slope

(V_R=600V, I_F=40A,

Dynamic test circuit in Figure E)

(V_R=600V, I_F=40A,

Dynamic test circuit in Figure E)

T_J=25°C

40A

-400A/µs

-300A/µs

-200A/µs

-100A/µs

-0A/µs

T_J=150°C

35A

T_J=150°C

30A

T_J=25°C

25A

20A

15A

10A

5A

0A

400A/µs

600A/µs

800A/µs

1000A/µs

400A/µs

600A/µs

800A/µs

1000A/µs

di_F/dt, DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery current

as a function of diode current

slope

di_F/dt, DIODE CURRENT SLOPE

Figure 26. Typical diode peak rate of fall of

reverse recovery current as a

function of diode current slope

(V_R=600V, I_F=40A,

Dynamic test circuit in Figure E)

11

Preliminary / Rev. 1 Jul-02

Power Semiconductors

IKW40T120

^

TrenchStop Series

100A

80A

60A

40A

20A

0A

T_J=25°C

I_F=80A

150°C

2,0V

1,5V

1,0V

0,5V

0,0V

40A

25A

10A

-50°C

0°C

50°C

100°C

0V

1V

2V

V_F, FORWARD VOLTAGE

Figure 27. Typical diode forward current as

a function of forward voltage

T_J, JUNCTION TEMPERATURE

Figure 28. Typical diode forward voltage as a

function of junction temperature

12

Preliminary / Rev. 1 Jul-02

Power Semiconductors

IKW40T120

^

TrenchStop Series

dimensions

TO-247AC

symbol

[mm]

[inch]

min

4.78

2.29

1.78

1.09

1.73

2.67

max

5.28

2.51

2.29

1.32

2.06

3.18

min

max

A

B

C

D

E

F

0.1882 0.2079

0.0902 0.0988

0.0701 0.0902

0.0429 0.0520

0.0681 0.0811

0.1051 0.1252

0.0299 max

0.8189 0.8331

0.6161 0.6358

0.2051 0.2252

0.7799 0.8142

0.1402 0.1941

0.1421

G

H

K

L

0.76 max

20.80

15.65

5.21

21.16

16.15

5.72

M

N

P

Q

19.81

3.560

20.68

4.930

3.61

6.12

6.22

0.2409 0.2449

13

Preliminary / Rev. 1 Jul-02

Power Semiconductors

IKW40T120

^

TrenchStop Series

i,v

t_{r r}=t_S+t_F

di_F/dt

Q_{r r}=Q_S+Q_F

t_{r r}

I_F

t_S

t_F

t

Q_S

10% I_{r r m}

Q_F

I_{r r m}

di_{r r}/dt

90% I_{r r m}

V_R

Figure C. Definition of diodes

switching characteristics

τ₁

τ

r²₂

τ_n

r₁

r _n

T (t)

j

p(t)

r ₂

r₁

r_n

Figure A. Definition of switching times

T

C

Figure D. Thermal equivalent

circuit

Figure E. Dynamic test circuit

Leakage inductance L_σ=180nH

and Stray capacity C_σ=39pF.

Figure B. Definition of switching losses

14

Preliminary / Rev. 1 Jul-02

Power Semiconductors

IKW40T120

^

TrenchStop Series

Published by

Infineon Technologies AG,

Bereich Kommunikation

St.-Martin-Strasse 53,

D-81541 München

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,

descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon

Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question

please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written

approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of

that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or

systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect

human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

15

Preliminary / Rev. 1 Jul-02

Power Semiconductors


型号：	IKW40T120XK
厂家：	Infineon
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