IKW50N60T_08_技术文档

IKW50N60T

q

TrenchStop^®Series

Low Loss DuoPack : IGBT in TrenchStop^®and Fieldstop technology

with soft, fast recovery anti-parallel EmCon HE diode

C

E

•

Very low V_CE(sat)1.5 V (typ.)

Maximum Junction Temperature 175 °C

Short circuit withstand time – 5µs

Designed for :

G

- Frequency Converters

- Uninterrupted Power Supply

•

TrenchStop^®and Fieldstop technology for 600 V applications

offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

- very high switching speed

PG-TO-247-3

•

Positive temperature coefficient in V_CE(sat)

Low EMI

Low Gate Charge

Very soft, fast recovery anti-parallel EmCon HE diode

Qualified according to JEDEC¹for target applications

Pb-free lead plating; RoHS compliant

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

V_CE

I_C

V_{CE(sat),Tj=25°C}

T_j,max

Marking

Package

IKW50N60T

600V

50A

1.5V

K50T60

PG-TO-247-3

175°C

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

DC collector current, limited by T_jmax

T_C= 25°C

V_CE

I_C

600

V

A

80²⁾

50

T_C= 100°C

Pulsed collector current, t_plimited by T_jmax

I_Cpuls

-

I_F

150

Turn off safe operating area (V_CE≤ 600V, T_j≤ 175°C)

Diode forward current, limited by T_jmax

T_C= 25°C

100

50

T_C= 100°C

Diode pulsed current, t_plimited by T_jmax

Gate-emitter voltage

I_Fpuls

V_GE

t_SC

150

±20

5

V

Short circuit withstand time³⁾

µs

V_GE= 15V, V_CC≤ 400V, T_j≤ 150°C

P_tot

T_j

T_stg

-

333

W

Power dissipation T_C= 25°C

Operating junction temperature

Storage temperature

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

-40...+175

-55...+175

260

°C

¹J-STD-020 and JESD-022

²⁾Value limited by bond wire

³⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

1

Rev. 2.4 Sep 08

Power Semiconductors

IKW50N60T

q

TrenchStop^®Series

Thermal Resistance

Parameter

Symbol

Conditions

Max. Value

Unit

Characteristic

IGBT thermal resistance,

junction – case

Diode thermal resistance,

junction – case

Thermal resistance,

junction – ambient

R_thJC

R_thJCD

R_thJA

0.45

0.8

40

K/W

Electrical Characteristic, at T_j= 25 °C, unless otherwise specified

Value

Typ.

Parameter

Symbol

Conditions

Unit

min.

max.

Static Characteristic

Collector-emitter breakdown voltage V_(BR)CES

V

_GE=0V, I_C=0.2mA

600

-

V

Collector-emitter saturation voltage

V_CE(sat)V_GE= 15V, I_C=50A

T_j=25°C

-

1.5

1.9

2

-

T_j=175°C

Diode forward voltage

V_F

V_GE=0V, I_F=50A

-

1.65

1.6

2.05

-

T_j=25°C

T_j=175°C

Gate-emitter threshold voltage

Zero gate voltage collector current

V_GE(th)

I_CES

I_C=0.8mA,V_CE=V_GE

4.1

4.9

5.7

V

_CE=600V,

µA

V

_GE=0V

T_j=25°C

T_j=175°C

-

31

-

40

1000

100

-

Gate-emitter leakage current

Transconductance

I_GES

g_fs

V

_CE=0V,V_GE=20V

_CE=20V, I_C=50A

nA

S

Integrated gate resistor

R_Gint

Ω

Dynamic Characteristic

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate charge

C_iss

C_oss

C_rss

V

_CE=25V,

_GE=0V,

-

3140

200

93

-

pF

f=1MHz

V

Q_Gate

_CC=480V, I_C=50A

_GE=15V

310

nC

nH

A

Internal emitter inductance

L_E

-

13

-

measured 5mm (0.197 in.) from case

Short circuit collector current¹⁾

I_C(SC)

458.3

V

_GE=15V,t_SC≤5µs

V_CC= 400V,

T_j≤ 150°C

¹⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

2

Rev. 2.4 Sep 08

Power Semiconductors

IKW50N60T

q

TrenchStop^®Series

Switching Characteristic, Inductive Load, at T_j=25 °C

Value

Unit

Parameter

Symbol

Conditions

min.

Typ.

max.

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

Anti-Parallel Diode Characteristic

Diode reverse recovery time

Diode reverse recovery charge

t_d(on)

t_r

t_d(off)

t_f

E_on

E_off

E_ts

-

26

29

299

29

1.2

1.4

2.6

-

ns

T_j=25°C,

V

_CC=400V,I_C=50A,

_GE=0/15V,

R_G= 7 Ω,

L_σ¹⁾=103nH,

C_σ¹⁾=39pF

mJ

Energy losses include

“tail” and diode

reverse recovery.

t_rr

Q_rr

-

143

1.8

27.7

671

-

ns

µC

A

T_j=25°C,

V_R=400V, I_F=50A,

di_F/dt=1280A/µs

Diode peak reverse recovery current I_rrm

Diode peak rate of fall of reverse

di_rr/dt

A/µs

recovery current during t_b

Switching Characteristic, Inductive Load, at T_j=175 °C

Value

Typ.

Parameter

Symbol

Conditions

Unit

min.

max.

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

Anti-Parallel Diode Characteristic

Diode reverse recovery time

Diode reverse recovery charge

t_d(on)

t_r

t_d(off)

t_f

E_on

E_off

E_ts

-

27

33

341

55

1.8

3.6

-

ns

T_j=175°C,

V

_CC=400V,I_C=50A,

_GE=0/15V,

R_G= 7 Ω

L_σ¹⁾=103nH,

C_σ¹⁾=39pF

mJ

Energy losses include

“tail” and diode

reverse recovery.

t_rr

Q_rr

-

205

4.3

40.7

449

-

ns

µC

A

T_j=175°C

V_R=400V, I_F=50A,

di_F/dt=1280A/µs

Diode peak reverse recovery current I_rrm

Diode peak rate of fall of reverse

di_rr/dt

A/µs

recovery current during t_b

¹⁾Leakage inductance L_σand Stray capacity C_σdue to dynamic test circuit in Figure E.

3

Rev. 2.4 Sep 08

Power Semiconductors

IKW50N60T

q

TrenchStop^®Series

t_p=2µs

140A

120A

100A

80A

60A

40A

20A

0A

100A

10µs

T_C=80°C

T_C=110°C

10A

50µs

I_c

1ms

I_c

DC

1A

1V

10ms

100Hz

1kHz

10kHz

100kHz

10V

100V

1000V

f, SWITCHING FREQUENCY

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of

Figure 2. Safe operating area

(D = 0, T_C= 25°C, T_j≤175°C;

V_GE=15V)

switching frequency

(T_j≤ 175°C, D = 0.5, V_CE= 400V,

V_GE= 0/+15V, R_G= 7Ω)

300W

250W

200W

150W

100W

50W

80A

60A

40A

20A

0A

0W

25°C

75°C

125°C

25°C

50°C

75°C 100°C 125°C 150°C

T_C, CASE TEMPERATURE

Figure 3. Power dissipation as a function of

case temperature

Figure 4. Collector current as a function of

case temperature

(T_j≤ 175°C)

(V_GE≥ 15V, T_j≤ 175°C)

4

Rev. 2.4 Sep 08

Power Semiconductors

IKW50N60T

q

TrenchStop^®Series

120A

100A

80A

60A

40A

20A

0A

120A

V

_GE=20V

15V

V

_GE=20V

100A

80A

60A

40A

20A

0A

15V

13V

11V

9V

11V

9V

7V

0V

1V

2V

3V

0V

1V

2V

3V

4V

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic

Figure 6. Typical output characteristic

(T_j= 25°C)

(T_j= 175°C)

2.5V

I_C=100A

80A

60A

40A

2.0V

1.5V

1.0V

0.5V

0.0V

I_C=50A

I_C=25A

T_J=175°C

20A

25°C

0A

0°C

50°C

100°C

150°C

0V

2V

4V

6V

8V

V

_GE, GATE-EMITTER VOLTAGE

Figure 7. Typical transfer characteristic

T_J, JUNCTION TEMPERATURE

Figure 8. Typical collector-emitter

(V_CE=10V)

saturation voltage as a function of

junction temperature

(V_GE= 15V)

5

Rev. 2.4 Sep 08

Power Semiconductors

IKW50N60T

q

TrenchStop^®Series

t_d(off)

100ns

t_r

t_f

100ns

t_f

t_r

t_d(on)

10ns

0Ω

0A

20A

40A

60A

80A

5Ω

10Ω

15Ω

20Ω

25Ω

I_C, COLLECTOR CURRENT

R_G, GATE RESISTOR

Figure 9. Typical switching times as a

function of collector current

(inductive load, T_J=175°C,

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, T_J= 175°C,

V

_CE= 400V, V_GE= 0/15V, R_G= 7ꢀ,

V_CE= 400V, V_GE= 0/15V, I_C= 50A,

Dynamic test circuit in Figure E)

7V

6V

t_d(off)

max.

typ.

5V

100ns

4V

3V

2V

1V

0V

min.

t_f

t_r

t_d(on)

10ns

25°C

50°C

75°C 100°C 125°C 150°C

-50°C

0°C

50°C

100°C

150°C

T_J, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

Figure 12. Gate-emitter threshold voltage as

a function of junction temperature

(I_C= 0.8mA)

function of junction temperature

(inductive load, V_CE= 400V,

V_GE= 0/15V, I_C= 50A, R_G=7ꢀ,

Dynamic test circuit in Figure E)

6

Rev. 2.4 Sep 08

Power Semiconductors

IKW50N60T

q

TrenchStop^®Series

*) E_onand E_tsinclude losses

due to diode recovery

E_ts*

due to diode recovery

6.0mJ

5.0mJ

4.0mJ

3.0mJ

2.0mJ

1.0mJ

0.0mJ

8.0mJ

6.0mJ

4.0mJ

2.0mJ

0.0mJ

E_ts*

E_on*

E_off

E_on

*

0A

20A

40A

60A

80A

0Ω

10Ω

20Ω

I_C, COLLECTOR CURRENT

R_G, GATE RESISTOR

Figure 13. Typical switching energy losses

Figure 14. Typical switching energy losses

as a function of gate resistor

as a function of collector current

(inductive load, T_J= 175°C,

V

_CE= 400V, V_GE= 0/15V, R_G= 7ꢀ,

V_CE= 400V, V_GE= 0/15V, I_C= 50A,

Dynamic test circuit in Figure E)

*) E_onand E_tsinclude losses

due to diode recovery

E_ts*

4mJ

3mJ

2mJ

1mJ

0mJ

3.0mJ

2.0mJ

1.0mJ

0.0mJ

E_on

*

E_ts*

E_off

E_on*

25°C 50°C 75°C 100°C 125°C 150°C

300V 350V 400V 450V 500V 550V

T_J, JUNCTION TEMPERATURE

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 15. Typical switching energy losses

as a function of junction

temperature

Figure 16. Typical switching energy losses

as a function of collector emitter

voltage

(inductive load, V_CE= 400V,

(inductive load, T_J= 175°C,

V

_GE= 0/15V, I_C= 50A, R_G= 7ꢀ,

V_GE= 0/15V, I_C= 50A, R_G= 7ꢀ,

Dynamic test circuit in Figure E)

7

Rev. 2.4 Sep 08

Power Semiconductors

IKW50N60T

q

TrenchStop^®Series

C_iss

15V

10V

5V

1nF

120V

480V

C_oss

100pF

C_rss

0V

10V

20V

30V

40V

0nC

100nC

200nC

300nC

Q_GE, GATE CHARGE

V_CE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge

Figure 18. Typical capacitance as a function

(I_C=50 A)

of collector-emitter voltage

(V_GE=0V, f = 1 MHz)

12µs

10µs

8µs

800A

700A

600A

500A

400A

300A

200A

100A

0A

6µs

4µs

2µs

0µs

10V

11V

12V

13V

14V

12V

14V

16V

18V

V_GE, GATE-EMITTETR VOLTAGE

V_GE, GATE-EMITETR VOLTAGE

Figure 19. Typical short circuit collector

current as a function of gate-

emitter voltage

Figure 20. Short circuit withstand time as a

function of gate-emitter voltage

(V_CE=600V, start at T_J=25°C,

T_Jmax<150°C)

(V_CE≤ 400V, T_j≤ 150°C)

8

Rev. 2.4 Sep 08

Power Semiconductors

IKW50N60T

q

TrenchStop^®Series

10 K/W

D=0.5

0.2

0.1

10^-1K/W

0.2

10^-1K/W

0.1

R , ( K / W )

0.18355

0.12996

0.09205

0.03736

0.00703

τ , ( s )

7.425*10^-2

8.34*10^-3

7.235*10^-4

1.035*10^-4

4.45*10^-5

R₂

R , ( K / W )

0.2441

τ , ( s )

7.037*10^-2

7.312*10^-3

6.431*10^-4

4.79*10^-5

R₂

0.05

6

0.05

0.2007

0.1673

0.1879

0.02

0.01

R₁

10^-2K/W

0.02

10^-2K/W

0.01

single pulse

C₁=τ₁/R₁C₂=τ₂/R₂

single pulse

1µs 10µs 100µs 1ms 10ms 100ms

t_P, PULSE WIDTH

Figure 21. IGBT transient thermal resistance

Figure 22. Diode transient thermal

(D = t_p/ T)

impedance as a function of pulse

width

(D=t_P/T)

4.0µC

3.5µC

3.0µC

2.5µC

2.0µC

1.5µC

1.0µC

0.5µC

0.0µC

300ns

T_J=175°C

250ns

200ns

150ns

T_J=25°C

100ns

50ns

0ns

700A/µs

800A/µs

900A/µs 1000A/µs

700A/µs 800A/µs 900A/µs 1000A/µs

di_F/dt, DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery time as

a function of diode current slope

(V_R=400V, I_F=50A,

Figure 24. Typical reverse recovery charge

as a function of diode current

slope

Dynamic test circuit in Figure E)

(V_R= 400V, I_F= 50A,

Dynamic test circuit in Figure E)

9

Rev. 2.4 Sep 08

Power Semiconductors

IKW50N60T

q

TrenchStop^®Series

40A

30A

20A

10A

0A

T_J=175°C

-750A/µs

-600A/µs

-450A/µs

-300A/µs

-150A/µs

T_J=25°C

T_J=175°C

0A/µs

700A/µs

800A/µs

900A/µs 1000A/µs

700A/µs 800A/µs 900A/µs 1000A/µs

di_F/dt, DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery current

as a function of diode current

slope

Figure 26. Typical diode peak rate of fall of

reverse recovery current as a

function of diode current slope

(V_R=400V, I_F=50A,

(V_R= 400V, I_F= 50A,

Dynamic test circuit in Figure E)

120A

I_F=100A

2.0V

1.5V

1.0V

0.5V

0.0V

100A

T_J=25°C

50A

25A

175°C

80A

60A

40A

20A

0A

0°C

50°C

100°C

150°C

0V

1V

2V

V_F, FORWARD VOLTAGE

Figure 27. Typical diode forward current as

a function of forward voltage

T_J, JUNCTION TEMPERATURE

Figure 28. Typical diode forward voltage as a

function of junction temperature

10

Rev. 2.4 Sep 08

Power Semiconductors

IKW50N60T

q

TrenchStop^®Series

PG-TO247-3

M

MIN

4.90

2.27

1.85

1.07

1.90

2.87

0.55

20.82

16.25

1.05

15.70

13.10

3.68

1.68

MAX

5.16

2.53

2.11

MIN

MAX

0.203

0.099

0.083

0.052

0.095

0.085

0.133

0.123

0.027

0.831

0.695

0.053

0.631

0.557

0.201

0.102

0.193

0.089

0.073

0.042

0.075

0.113

0.022

0.820

0.640

0.041

0.618

0.516

0.145

0.066

Z8B00003327

0

1.33

2.41

2.16

3.38

3.13

0.68

21.10

17.65

1.35

16.03

14.15

5.10

2.60

5

0

5

7.5mm

5.44

3

0.214

3

19.80

4.17

3.50

5.49

6.04

20.31

4.47

3.70

6.00

6.30

0.780

0.164

0.138

0.216

0.238

0.799

0.176

0.146

0.236

0.248

17-12-2007

03

11

Rev. 2.4 Sep 08

Power Semiconductors

IKW50N60T

q

TrenchStop^®Series

i,v

t_{r r}=t_S+t_F

di_F/dt

Q_{r r}=Q_S+Q_F

t_{r r}

I_F

t_S

t_F

t

Q_S

10% I_{r r m}

Q_F

I_{r r m}

di_{r r}/dt

V_R

90% I_{r r m}

Figure C. Definition of diodes

switching characteristics

τ₁

τ₂

r ₂

τ_n

r₁

r _n

T (t)

j

p(t)

r ₂

r₁

r_n

Figure A. Definition of switching times

T

C

Figure D. Thermal equivalent

circuit

Figure E. Dynamic test circuit

Figure B. Definition of switching losses

12

Rev. 2.4 Sep 08

Power Semiconductors

IKW50N60T

q

TrenchStop^®Series

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or

characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or

any information regarding the application of the device, Infineon Technologies hereby disclaims any and all

warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual

property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the

types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies

components may be used in life-support devices or systems only with the express written approval of

Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of

that life-support device or system or to affect the safety or effectiveness of that device or system. Life support

devices or systems are intended to be implanted in the human body or to support and/or maintain and

sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other

persons may be endangered.

13

Rev. 2.4 Sep 08

Power Semiconductors


型号：	IKW50N60T_08
厂家：	Infineon
描述：	Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology 低损耗DuoPack ： IGBT在TRENCHSTOP和场终止技术双极性晶体管
文件：	总13页 (文件大小：413K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IKW50N60T_08 [INFINEON]

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